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At least 973 records · Page 54

GaP betavoltaic cells as a power source

Maximum power output for the GaP cells of this study was found to be on the order of 1 microW. This resulted from exposure to 200 and 40 KeV electrons at a flux of 2 x 10(exp 9) electrons/sq cm/s, equivalent to a 54 mCurie source. The efficiencies of the cells ranged from 5 to 9 percent for 200 and 40 KeV electrons respectively. The lower efficiency at higher energy is due to a substantial fraction of energy deposition in the substrate, further than a diffusion length from the depletion region of the cell. Radiation damage was clearly observed in GaP after exposure to 200 KeV electrons at a fluence of 2 x 10(exp 12) electrons/sq cm. No discernable damage was observed after exposure to 40 KeV electrons at the same fluence. Analysis indicates that a GaP betavoltaic system would not be practical if limited to low energy beta sources. The power available would be too low even in the ideal case. By utilizing high activity beta sources, such as Sr-90/Y-90, it may be possible to achieve performance that could be suitable for some space power applications. However, to utilize such a source the problem of radiation damage in the beta cell material must be overcome.

Pool, F. S.↗

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗

Atomic oxygen interactions with FEP Teflon and silicones on LDEF

The Long Duration Exposure Facility (LDEF) spacecraft represents the first controlled unidirectional exposure of high-fluence atomic oxygen on fluorinated ethylene propylene (FEP Teflon) and silicones. The atomic oxygen erosion yield for FEP Teflon was found to be significantly in excess of previous low fluence orbital data and is an order of magnitude below that of polyimide Kapton. LDEF FEP Teflon erosion yield data as a function of angle of attack is presented. Atomic oxygen interaction with silicon polymers results in crazing of the silicones as well as deposition of dark contaminant oxidation products on adjoining surfaces. Documentation of results and possible mechanistic explanations are presented.

Banks, Bruce A.↗

Flare fragmentation and type III productivity in the 1980 June 27 flare

Observations of the solar flare on June 27, 1980 were presented, 16:14-16:33 UT, which was observed by a balloon-borne 300 sq cm phoswich hard X-ray detector and by the IKARUS radio spectrometer. This flare shows intense hard X-ray (HXR) emission and an extreme productivity of (at least 754) type III bursts at 200-400 MHz. A linear correlation was found between the type III burst rate and the HXR fluence. The occurrence of about 10 type III bursts/second, and also the even higher rate of millisecond spikes, suggests a high degree of fragmentation in the acceleration region. This high quantization of injected beams, assuming the thick-target model, shows up in a linear relationship between hard X-ray fluence and the type III rate, but not as fine structures in the HXR time profile. The generation of a superhot isothermal HXR component in the decay phase of the flare coincides with the fade-out of type III production.

Aschwanden, M. J.↗

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗

The effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes

The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.

Barnes, C. E.↗

Measured space environmental effects to LDEF during retrieval

On the STS-32 shuttle mission, a space flight experiment provided an understanding of the effects of the space environment on the Long Duration Exposure Facility (LDEF) from rendezvous with the shuttle until removal from the payload bay at the Orbiter Processing Facility (OPF) at KSC. The Interim Operational Contamination Monitor (IOCM) is an attached shuttle payload that has been used on two earlier flights (STS 51C and STS 28) to quantify the contamination deposited during the course of the mission. The IOCM can characterize by direct measurement, the deposition of molecular and particulate contamination during any phase of flight. In addition to these principal measurements, the IOCM actively measures the thermophysical properties of thermal control surfaces by calorimetry, the flux of the ambient atomic oxygen environment, the incident solar flux, and the absolute ambient pressure in the payload bay. The IOCM also provides a structure and sample holders for the exposure of passive material samples to the space environment, e.g. thermal cycling, atomic oxygen, and micrometeoroids and/or orbital debris, etc. One of the more salient results from the STS-32 flight suggests that the LDEF emitted a large number of particulates after berthing into the shuttle. The mission atomic oxygen fluence was also calculated. Although the fluence was low by normal standards, the Kapton passive samples exhibited the onset of erosion. Orbital debris and micrometeoroid impacts also occurred during the retrieval mission. The average perforation diameter was approximately 12.5 microns. The largest perforation diameter was measured at 65 microns.

Maag, Carl R.↗

Prediction of LDEF ionizing radiation environment

The Long Duration Exposure Facility (LDEF) spacecraft flew in a 28.5 deg inclination circular orbit with an altitude in the range from 172 to 258.5 nautical miles. For this orbital altitude and inclination two components contribute most of the penetrating charge particle radiation encountered - the galactic cosmic rays and the geomagnetically trapped Van Allen protons. Where shielding is less than 1.0 g/sq cm geomagnetically trapped electrons make a significant contribution. The 'Vette' models together with the associated magnetic filed models were used to obtain the trapped electron and proton fluences. The mission proton doses were obtained from the fluence using the Burrell proton dose program. For the electron and bremsstrahlung dose we used the Marshall Space Flight Center (MSFC) electron dose program. The predicted doses were in general agreement with those measured with on-board thermoluminescent detector (TLD) dosimeters. The NRL package of programs, Cosmic Ray Effects on MicroElectronics (CREME), was used to calculate the linear energy transfer (LET) spectrum due to galactic cosmic rays (GCR) and trapped protons for comparison with LDEF measurements.

Watts, John W.↗

Atomic oxygen interactions with FEP Teflon and silicones on LDEF

The Long Duration Exposure Facility (LDEF) spacecraft has enabled the measurement of the effects of fixed orientation exposure of high fluence atomic oxygen on fluorinated ethylene propylene (FEP Teflon) and silicones. The atomic oxygen erosion yield for the FEP Teflon was found to be 3.64 x 10(exp -25) cm(exp 3)/atom. This erosion yield is significantly higher than that measured from previous low fluence orbital data. The FEP Teflon erosion yield was found to have the same dependence on oxygen arrival angle as Kapton and Mylar. Atomic oxygen interaction with silicon polymers results in the crazing of silicon. Released silicone contaminants were found to darken upon further atomic oxygen exposure.

Bruce A. Banks↗

Durability evaluation of photovoltaic blanket materials exposed on LDEF tray S1003

Several candidate protective coatings on Kapton and uncoated Kapton were exposed to the low Earth orbital (LEO) environment on the Long Duration Exposure Facility (LDEF) to determine if the coatings could be used to protect polymeric substrates from degradation in the LEO environment. The coatings that were evaluated were 700 A of aluminum oxide, 650 A of silicon dioxide, and 650 A of a 4 percent polytetrafluoroethylene-96 percent silicon dioxide mixed coating. All of the coatings evaluated were ion beam sputter deposited. These materials were exposed to a very low atomic oxygen fluence (4.8 x 10 exp 19 atoms/sq. cm) as a result of the experiment tray being located 98 degrees from the ram direction. As a result of the low atomic oxygen fluence, determination of a change in mass was not possible for any of the samples including the uncoated Kapton. There was no evidence of spalling of any of the coatings after the approximately 33,600 thermal cycles recorded for LDEF. The surface of the uncoated Kapton, however, did show evidence of grazing incidence texturing. There was a 7-8 percent increase in solar absorptance for the silicon dioxide and aluminum oxide coated Kapton and only a 4 percent increase for the mixed coating. It appears that the addition of a small amount of fluoropolymer may reduce the magnitude of absorptance increase due to environmental exposure. Thermal emittance did not change significantly for any of the exposed samples. Scanning electron microscopy revealed few micrometeoroid or debris impacts, but the impact sites found indicated that the extent of damage or cracking of the coating around the defect site did not extend beyond a factor of three of the impact crater diameter. This limiting of impact damage is of great significance for the durability of thin film coatings used for protection against the LEO environment.

Sharon K Rutledge↗

LDEF: Dosimetric measurement results (AO 138-7 experiment)

One of the objectives of the AO 138-7 experiment on board the LDEF was a total dose measurement with Thermo Luminescent Detectors (TLD 100). Two identical cases, both including 5 TLDs inside various aluminum shields, are exposed to the space environment in order to obtain the absorbed dose profile induced. Radiation fluence received during the total mission length was computed, taking into account the trapped particles (solar maximum and solar minimum periods) and the cosmic rays; due to the magnetospheric shielding, the solar proton fluences are negligible on the LDEF orbit. The total dose induced by these radiations inside a semi-infinite plane shield of Al are computed with radiation transport codes. TLD reading are performed after flight; due to the mission duration increase, a post-flight calibration was necessary in order to cover the range of the flight induced dose. The results obtained, similar (+ or - 30 pct.) in both cases, are compared with the dose profile computation. In practice, these LDEF results, with less than a factor 1.4 between measurements and forecasts, reinforce the validity of the computation methods and models used for the long term evaluation of space radiation intensity on low inclination Earth orbits.

Bourrieau, J.↗

Radiation model predictions and validation using LDEF data

Radiation dosimetry aboard LDEF, as well as post-flight measurements of the radioactivity induced in numerous LDEF spacecraft components, provide unique data for evaluating the accuracy of current models for predicting both the space radiation environments (trapped proton intensity, spectra, and directionality; cosmic ray fluence) and the radiation environments induced in spacecraft components (fluence, energy spectra, secondary particle, linear energy transfer, etc.). By determining the accuracy of such models using LDEF data, and with model updates where required, improved radiation environment predictions can be made for future missions, which in turn allows improved predictions for specific radiation effects for future spacecraft components (single event upsets of microelectronics, radiation damage to focal plane arrays, noise in sensitive instrumentation, etc.). Herein, the status and results from radiation model predictions and comparisons with LDEF data is given. The calculations are made using radiation transport codes coupled with a 3-D geometry/mass model of LDEF, together with current models of the space radiation environment.

Armstrong, T. W.↗

Radiation performance of GaAs concentrator cells for 0.4 to 12 MeV electrons and 0.1 to 37 MeV protons

Gallium arsenide concentrator cells have been irradiated with both electrons and protons with a wide variety of energies. The cells are made using OM-VPE growth process with a junction depth of a half micron. All data are taken with bare cells without coverglasses or shielding. Performance data are given at the designed concentration level of 100X AMO. Results are presented in a number of ways, including performance of electrical parameters (Pmax, Isc, and Voc) as a function of fluence for different electron and proton energies. Critical fluences (defined at a degradation of 25 percent in Pmax) are calculated for each energy level and presented for both electron and proton irradiations.

Curtis, Henry B.↗

Laser damage of HR, AR-coatings, monolayers and bare surfaces at 1064 nm

Laser induced damage thresholds and morphologies were investigated in a variety of uncoated and coated surfaces, including monolayers and multi-layers of different chemical compositions. Both antireflective (AR) and highly reflective (HR) were tested. Testing was done at 1064 nm with 25 picosecond and 8 nanosecond YAG/Nd laser single pulses. Spot diameter in the experiments varied from 0.09 to 0.22 mm. The laser damage measurement procedure consisted of 1-on-1 (single laser pulse in the selected site) and N-on-1 experiments including repeated irradiation by pulses of the same fluence and subsequently raised from pulse to pulse fluence until damage occurred. The highest picosecond damage thresholds of commercially available coatings averaged 12 - 14 J/sq cm, 50 percent less than thresholds obtained in bare fused silica. Some coatings and bare surfaces revealed a palpable preconditioning effect (an increase in threshold of 1.2 to 1.8 times). Picosecond and nanosecond data were compared to draw conclusions about pulse width dependence. An attempt was made to classify damage morphologies according to the type of coating, class of irradiating, and damage level.

Garnov, S. V.↗

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Foote, M. C.↗

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Jain, R. K.↗

Radiation effects in heteroepitaxial InP solar cells

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Weinberg, I.↗