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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Computational design of high-entropy rare earth aluminum garnets for advanced thermal and environmental barrier coatings

To enhance the protection of Ni-based superalloys in gas turbine engines’ high-temperature environments, it’s crucial to develop advanced thermal/environmental barrier coating (T/EBC) materials with a balanced combination of thermal and mechanical properties. This optimization is essential to safeguard against chemical and thermal challenges. Here, in this study, we harness the power of density functional theory (DFT) in conjunction with combinatorial chemistry methodologies to engineer high-performance high-entropy rare earth disilicates of the RE 3 Al 5 O 12 family (where RE denotes Y, Gd, Er, and Yb). These materials are meticulously designed to exhibit superior phase stability, a targeted coefficient of thermal expansion (CTE), low lattice thermal conductivity, and robust mechanical properties. The determination of CTE values is accomplished through phonon calculations at various volume settings within the quasi-harmonic approximation, while lattice thermal conductivities are rigorously assessed employing the Debye-Callaway model, accounting for three distinct phonon processes. Our findings highlight the remarkable attributes of the solid solution (Y 1/4 Gd 1/4 Er 1/4 Yb 1/4 ) 3 Al 5 O 12 , which displays a reduction in lattice thermal conductivity compared to its individual constituents while maintaining a favorable range of CTE values. The novel T/EBC material, distinguished by their multifaceted functionalities, are poised to use in substantial enhancements in the performance of engines.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94

Lawrence Livermore National Laboratory (LLNL) discovered a novel process to selectively grow pseudornorphic, stoichiometric silicon carbide (SiC) on silicon wafers. This unique process has advantages over conventional techniques, including panerrung of the SiC thin films on silicon · wafers and processing at lower substrate temperatures ( <900°C). This process takes advantage of the reactivity ofC60 nanoclusters with silicon and the large difference in the reactivity of C60 with silicon and silicon dioxide. HP was interested in applying this process for incorporation of SiC in light emitting diodes and micromechanica1 devices. SiC has a very close lattice match with GaN, a promising material for blue light-emitting diodes (LEDs). Heteroepitaxial growth of GaN on SiC has a potential to produce high quality blue LED devices. SiC is chemically inert, strong, hard, and thermally stable. These properties also make it promising in rrncromechanica1 applications. The objective of this project was to produce thin film SiC on silicon wafers using LLNL's novel process, characteriz.e the SiC thin films in detail to optimize the growth process, and assess the applicability of this process to the production of high-quality blue LED's and micromechanical devices. Both parties performed detailed characterization measurements to optimize the process.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Image-plane processing for improved computer vision

The proper combination of optical design with image plane processing, as in the mechanism of human vision, which allows to improve the performance of sensor array imaging systems for edge detection and location was examined. Two dimensional bandpass filtering during image formation, optimizes edge enhancement and minimizes data transmission. It permits control of the spatial imaging system response to tradeoff edge enhancement for sensitivity at low light levels. It is shown that most of the information, up to about 94%, is contained in the signal intensity transitions from which the location of edges is determined for raw primal sketches. Shading the lens transmittance to increase depth of field and using a hexagonal instead of square sensor array lattice to decrease sensitivity to edge orientation improves edge information about 10%.

Huck, F. O.↗
DOE OSTI2016

Determination of residual stress in a microtextured α titanium component using high-energy synchrotron X-rays

A shrink-fit sample is manufactured with a Ti-8Al-1Mo-1V alloy to introduce a multiaxial residual stress field in the disk of the sample. A set of strain and orientation pole figures are measured at various locations across the disk using synchrotron high-energy X-ray diffraction. Two approaches—the traditional sin 2 Ψ method and the bi-scale optimization method—are taken to determine the stresses in the disk based on the measured strain and orientation pole figures, to explore the range of solutions that are possible for the stress field within the disk. While the stress components computed using the sin 2 Ψ method and the bi-scale optimization method have similar trends, their magnitudes are significantly different. Lastly, it is suspected that the local texture variation in the material is the cause of this discrepancy.

42 ENGINEERING↗
DOE OSTI2019

Water‐Assisted Liftoff of Polycrystalline CdS/CdTe Thin Films Using Heterogeneous Interfacial Engineering

Abstract Recent advances in device design and process optimizations have enabled the production of CdTe devices on flexible substrates, but the necessary high‐temperature processing (>450 °C) to recrystallize grains limits the use of alternative lightweight substrates. Here, a new synthesis method is reported to create a freestanding CdS/CdTe film by combining high‐temperature depositions (CdS/CdTe on Si/SiO 2 ) and a simple lift‐off process in a water environment at room temperature. Analysis of the results indicate that the delamination is facilitated by the innate lattice mismatch as well as the presence of an unexpected Te‐rich layer (≈20 nm), which accumulates on the SiO 2 surface. High‐resolution electron microscopy and spectroscopy measurements confirm that the CdS/CdTe film is physically liberated from the substrate without leaving any residue, while also preserving their initial structural and compositional properties.

Magginetti, David J.↗
DOE OSTI2025

Chromium enhances the mechanical performance of 3d transition metal high entropy alloys

A comprehensive examination of the compositional effects on the deformation behavior of high entropy alloys (HEAs) was conducted through nanoindentation, indentation creep, and stress relaxation experiments at ambient temperature. The alloys investigated included NiCoFe, NiCoCr, NiCoCrFe, and NiCoCrFeMn, all of which underwent identical thermomechanical processing. From the experimental results, NiCoCr exhibited the highest maximum shear stress for dislocation nucleation (13 GPa) and nanoindentation hardness (3.8 GPa) among the alloys tested. It also showed the lowest stress sensitivity (0.02) and activation volume (3–4 b 3 ) under creep and stress relaxation conditions, indicative of its superior plastic flow properties. Density functional theory (DFT) calculations further revealed an uneven charge density and larger bonding-length variation in NiCoCr due to the presence of Cr, which increased lattice distortion, impeding dislocation movement. Furthermore, in this study, post-deformation microscopy using transmission electron microscopy (TEM) revealed a high density of stacking faults and twins in NiCoCr that effectively enhanced its creep strength. The results highlight the significance of specific elemental effects, particularly from Cr in this study, over configurational entropy effect (i.e., compositional complexity) in governing the deformation microstructure and mechanical properties of HEAs. Finally, these insights will be instrumental for the design and optimization of advanced alloys for load-bearing applications.

36 - MATERIALS SCIENCE↗
DOE OSTI2020

Structure of chalcogen overlayers on Au(111): Density functional theory and lattice-gas modeling

Ordering of different chalcogens, S, Se, and Te, on Au(111) exhibit broad similarities but also some distinct features, which must reflect subtle differences in relative values of the long-range pair and many-body lateral interactions between adatoms. We develop lattice-gas (LG) models within a cluster expansion framework, which includes about 50 interaction parameters. These LG models are developed based on density functional theory (DFT) analysis of the energetics of key adlayer configurations in combination with the Monte Carlo (MC) simulation of the LG models to identify statistically relevant adlayer motifs, i.e., model development is based entirely on theoretical considerations. The MC simulation guides additional DFT analysis and iterative model refinement. Given their complexity, development of optimal models is also aided by strategies from supervised machine learning. The model for S successfully captures ordering motifs over a broader range of coverage than achieved by previous models, and models for Se and Te capture the features of ordering, which are distinct from those for S. More specifically, the modeling for all three chalcogens successfully explains the linear adatom rows (also subtle differences between them) observed at low coverages of ~0.1 monolayer. The model for S also leads to a new possible explanation for the experimentally observed phase with a (5 × 5)-type low energy electron diffraction (LEED) pattern at 0.28 ML and to predictions for LEED patterns that would be observed with Se and Te at this coverage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Deep learning the properties of inorganic perovskites

We report the ability to accurately and quickly predict the stability of materials and their structural and electronic properties remains a grand challenge in materials science. Density functional theory is widely used as a means of predicting these material properties, but is known to be computationally expensive and scales as the cube of the number of electrons in the material’s unit cell. In this article, for a previously published dataset of inorganic perovskites, we show that a single neural network model using only the elemental properties of the compounds’ constituents can predict lattice constants to within 0.1 Å, heat of formation to within 0.2 eV, and band gaps to within 0.7 eV RMSE. We also compare the performance of the trained network to two widely used regression techniques, namely random forest and Kernel ridge regression, and find that the neural network’s predictions are more accurate for each of the properties. The simultaneous accurate prediction of multiple key properties of technologically relevant materials is promising for rational design and optimization in known and novel chemical spaces.

36 MATERIALS SCIENCE↗
DOE OSTI2018

LDRD 191204: Optimization of Sputtered Aluminum Nitride for the Seeding of Metal Organic Chemical Vapor Deposition Gallium Nitride Films

GaN-on-Si combines the wide bandgap advantages of GaN with the cost and scaling advantages of Si. Sputtered A1N is an attractive nucleation layer material because it reduces Al diffusion into the Si and eliminates a time-intensive preconditioning step in the GaN growth process, but is limited by the poor film quality of PVD A1N films deposited on Si substrates. Sputtering also offers a large degree of control over A1N film properties, including control of the intrinsic stress using substrate biasing. Doping the A1N films with Sc improves the lattice match to A1GaN and GaN films by expanding the a-axis and c-axis lattice parameters. A1N and A1 0.88 Sc 0.12 N films have been grown on silicon, metal, and sapphire substrates and characterized for properties such as stress, grain size, roughness, and film orientation for use as nucleation layers for MOCVD GaN growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Combinatorial Cu-Ni Alloy Thin-Film Catalysts for Layer Number Control in Chemical Vapor-Deposited Graphene

We synthesized a combinatorial library of CuxNi1−x alloy thin films via co-sputtering from Cu and Ni targets to catalyze graphene chemical vapor deposition. The alloy morphology, composition, and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and X-ray diffraction (XRD), respectively. Subsequently, the CuxNi1−x alloy thin films were used to grow graphene in a CH4-Ar-H2 ambient at atmospheric pressure. The underlying rationale is to adjust the CuxNi1−x composition to control the graphene. Energy dispersive x-ray spectroscopy (EDS) analysis revealed that a continuous gradient of CuxNi1−x (25 at. % < x < 83 at.%) was initially achieved across the 100 mm diameter substrate (~0.9%/mm composition gradient). The XRD spectra confirmed a solid solution was realized and the face-centered cubic lattice parameter varied from ~3.52 to 3.58 A˙, consistent with the measured composition gradient, assuming Vegard’s law. Optical microscopy and Raman analysis of the graphene layers suggest single layer growth occurs with x > 69 at.%, bilayer growth dominates from 48 at.% < x < 69 at.%, and multilayer (≥3) growth occurs for x < 48 at.%, where x is the Cu concentration. Finally, a large area of bi-layer graphene was grown via a CuxNi1−x catalyst with optimized catalyst composition and growth temperature.

2D materials↗
DOE OSTI2023

Assessing the Intrinsic Roles of Key Dopant Elements in High–Nickel Layered Oxide Cathodes in Lithium–Based Batteries

A rational compositional design is critical for utilizing LiNiO 2 -based cathodes with Ni contents > 90% as promising next-generation cathode materials. Unfortunately, the lack of a fundamental understanding of the intrinsic roles of key elements, such as cobalt, manganese, and aluminum, makes the rational compositional design of high-Ni cathodes with a limited range of dopants (<10%) particularly challenging. Here, with 5% single-element doped cathodes, viz., LiNi 0.95 Co 0.05 O 2 , LiNi 0.95 Mn 0.05 O 2 , and LiNi 0.95 Al 0.05 O 2 , along with undoped LiNiO 2 (LNO), the influences of the dopants are systematically examined through a control of cutoff charge energy density and a common practice of cutoff charge voltage. Comprehensive investigations into the electrochemical properties, combined with in-depth analyses of the structural and interfasial stabilities and electrolyte decomposition pathways through advanced characterizations, unveil the following: i) the intrinsic role of dopants regulates the cathode energy density or state-of-charge and, more critically, the occurrence of H2–H3 phase transition, which essentially dictates cyclability; ii) undoped LNO can be stabilized well with the avoidance of H2–H3 phase transition; and iii) Co provides more merits overall with an optimized electrochemical operating condition. Finally, this work provides guidance for the compositional design of high-energy-density high-Ni cathodes and sheds light on the challenges of removing Co.

25 ENERGY STORAGE↗
DOE OSTI2019

Effect of Preheated Microstructure Vis-à-vis Process Parameters and Characterization of Orange Peel in Incremental Forming of AA1050 Sheets

The present investigation systematically analyzes and compares the influence of microstructure and crystallographic texture of AA1050 sheet to that of the most critical process parameters, namely tool dimension, and incremental step depth, in single-point incremental forming (SPIF) process. The sheet samples were preheated at different temperatures to reform the original, i.e., distorted and misoriented grain distribution. The results from experimental and statistical analyses report higher sensitivity of global spring back, surface topography and forming limits strains to variations in microstructure and texture than tool diameter and incremental step depth. The preheating of the sheets resulted in the formation of preferential texture by grain reformation, which leads to the increase in the fraction of homogeneous orientated grains. Such grains increase the maximum forming limit strains and reduce the global spring back in SPIF. Fractography analysis of the failed components revealed that improvement in formability due to grain homogenization (developed texture) may be attributed to larger average void diameter. Empirical models were also developed, and optimized levels of parameters were identified to maximize the efficiency of the SPIF process. Further, qualitative and quantitative characterization of orange peel roughness was carried out by segregating the external formed surface into surfaces subjected to orange peel roughness and tool-induced texture.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Bis(1,2,4-oxadiazole)bis(methylene) Dinitrate: A High-Energy Melt-Castable Explosive and Energetic Propellant Plasticizing Ingredient

Here, we discuss the synthesis of bis(1,2,4-oxadiazole)bis(methylene) dinitrate, determination of its crystal structure by X-ray diffractometry, calculations of its explosive performance, and sensitivity measurements. Steps taken to optimize the synthesis process and to improve yields of the dinitrate are also discussed. Bis(1,2,4-oxadiazole)bis(methylene) dinitrate has a calculated detonation pressure 50% higher than that of TNT. The dinitrate compound exhibits a relatively high decomposition temperature that is rarely observed for nitrate-based compounds. The dinitrate was found to have lower sensitivities to impact and friction compared with RDX. Finally, it is believed that intramolecular hydrogen bonding observed in the crystal lattice assists in the relatively high thermal stability and relatively low sensitivity of the material.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Direct visualization of polaron formation in the thermoelectric SnSe

SnSe is a layered material that currently holds the record for bulk thermoelectric efficiency. The primary determinant of this high efficiency is thought to be the anomalously low thermal conductivity resulting from strong anharmonic coupling within the phonon system. Here we show that the nature of the carrier system in SnSe is also determined by strong coupling to phonons by directly visualizing polaron formation in the material. We employ ultrafast electron diffraction and diffuse scattering to track the response of phonons in both momentum and time to the photodoping of free carriers across the bandgap, observing the bimodal and anisotropic lattice distortions that drive carrier localization. Relatively large (18.7 Å), quasi-one-dimensional (1D) polarons are formed on the 300-fs timescale with smaller (4.2 Å) 3D polarons taking an order of magnitude longer (4 ps) to form. This difference appears to be a consequence of the profoundly anisotropic electron–phonon coupling in SnSe, with strong Fröhlich coupling only to zone-center polar optical phonons. These results demonstrate a high density of polarons in SnSe at optimal doping levels. Strong electron-phonon coupling is critical to the thermoelectric performance of this benchmark material and, potentially, high performance thermoelectrics more generally.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Aerodynamic optimization, comparison, and trim design of canard and conventional high performance general aviation configurations

A design study has been conducted to optimize trim cruise flight of high performance general aviation canard aircraft which achieve minimum drag. In order to investigate the advantages and disadvantages of canard configured aircraft, corresponding conventional tail-aft 'baseline' aircraft were designed and used for comparison. Two-dimensional predictions were obtained by coupling inviscid results from a vortex panel multi-element program to a momentum integral boundary layer analysis. Using the results of the two-dimensional vortex panel analysis, a vortex lattice method was employed to predict the finite wing results. The analysis utilized a turbulent airfoil and a natural laminar airfoil which are two NASA state-of-the-art airfoil sections. The canard aircraft designs give quantitative results of wing and canard loadings, wing-to-canard moment arm ratios, and aspect ratio effects for trim cruise flight for a wide range of wing-to-canard area ratios. Both canard and baseline aircraft achieved a 25 to 30 percent improvement in performance over typical current technology aircraft, but high canard loading necessary for trim resulted in slightly poorer performance of the canard aircraft as compared to the baseline designs.

Keith, M. W.↗
DOE OSTI2023

Accurate prediction of oxygen vacancy concentration with disordered A-site cations in high-entropy perovskite oxides

Abstract Entropic stabilized ABO 3 perovskite oxides promise many applications, including the two-step solar thermochemical hydrogen (STCH) production. Using binary and quaternary A-site mixed {A}FeO 3 as a model system, we reveal that as more cation types, especially above four, are mixed on the A-site, the cell lattice becomes more cubic-like but the local Fe–O octahedrons are more distorted. By comparing four different Density Functional Theory-informed statistical models with experiments, we show that the oxygen vacancy formation energies ( $${E}_{V}^{f}$$ E V f ) distribution and the vacancy interactions must be considered to predict the oxygen non-stoichiometry ( δ ) accurately. For STCH applications, the $${E}_{V}^{f}$$ E V f distribution, including both the average and the spread, can be optimized jointly to improve Δ δ (difference of δ between the two-step conditions) in some hydrogen production levels. This model can be used to predict the range of water splitting that can be thermodynamically improved by mixing cations in {A}FeO 3 perovskites.

08 HYDROGEN↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗