Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field
Not Available
Bestwick, A. J.↗
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Lattice quantum Monte Carlo study of chiral magnetic effect in Dirac semimetals
In this paper Chiral Magnetic Effect (CME) in Dirac semimetals is studied by means of lattice Monte Carlo simulation. We measure conductivity of Dirac semimetals as a function of external magnetic field in parallel σ{sub ∥} and perpendicular σ{sub ⊥} to the external field directions. The simulations are carried out in three regimes: semimetal phase, onset of the insulator phase and deep in the insulator phase. In the semimetal phase σ{sub ∥} grows whereas σ{sub ⊥} drops with magnetic field. Similar behaviour was observed in the onset of the insulator phase but conductivity is smaller and its dependence on magnetic field is weaker. Finally in the insulator phase conductivities σ{sub ∥,⊥} are close to zero and do not depend on magnetic field. In other words, we observe manifestation of the CME current in the semimetal phase, weaker manifestation of the CME in the onset of the insulator phase. We do not observe signatures of CME in the insulator phase. We believe that the suppression of the CME current in the insulator phase is connected to chiral symmetry breaking and generation of dynamical fermion mass which take place in this phase.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells
The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.
36 MATERIALS SCIENCE↗
Positive and negative effects of dielectric breakdown in transformer oil based magnetic fluids
The transformer oil based magnetic fluids can be considered as the next-generation insulation fluids because they offer exciting new possibilities to enhance dielectric breakdown voltage as well as heat transfer performance compared to pure transformer oils. In this study, we have investigated the dielectric breakdown strength of the fluids with the various volume concentrations of nanoparticles in accordance with IEC 156 standard and have tried to find the reason for changing the dielectric breakdown voltage of the fluids from the magnetic field analysis. It was found that the dielectric breakdown voltage of pure transformer oil is around 12 kV with the gap distance of 1.5 mm. In the case of our transformer oil-based magnetic fluids with 0.08% < Φ < 0.6% (Φ means the volume concentration of magnetic nanoparticles), the dielectric breakdown voltage shows above 40 kV, which is 3.3 times higher positively than that of pure transformer oil. Negatively in the case when the volume concentration of magnetic nanoparticles is above 0.65%, the dielectric breakdown voltage decreases reversely. From the magnetic field analysis, the reason might be considered as two situations: the positive is for the conductive nanoparticles dispersed well near the electrodes, which play an important role in converting fast electrons to slow negatively charged particles, and the negative is for the agglomeration of the particles near the electrodes, which leads to the breakdown initiation.
36 MATERIALS SCIENCE↗
Altermagnetism Induced Surface Chern Insulator
We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a robust and switchable platform with near-vanishing magnetization. We demonstrate the feasibility of this approach by studying a slab of the TCI SnTe coupled to an altermagnetic RuO 2 layer. Our first-principles calculations reveal that the d-wave altermagnetism in RuO 2 induces a 7 meV gap to the Dirac surface states on the (110) surface of SnTe, producing a finite anomalous Hall effect. Our approach generalizes to broader classes of altermagnetic materials and TCIs, thereby providing a family of topological altermagnetic heterostructures with small or vanishing magnetization that support nontrivial Chern numbers. In conclusion, our results highlight a promising new topological platform with great tunability and applications to spintronics.
36 MATERIALS SCIENCE↗
Electrochemical Control of Magnetism on the Breathing Kagome Network of Li x ScMo 3 O 8
Controlling properties within a given functional inorganic material structure type is often accomplished through tuning the electronic occupation, which is in turn dictated by the elemental composition determined at the time of material preparation. We employ electrochemical control of the lithium content, with associated electronic occupancy control, to vary the magnetic properties of a material where a kagome-derived network of Mo 3 triangles carry the spin. In this case, Li is electrochemically inserted into LiScMo 3 O 8 , a layered compound containing a breathing Mo kagome network. Up to two additional Li can be inserted into LiScMo 3 O 8 , transforming it into Li 3 ScMo 3 O 8 . Li 2 ScMo 3 O 8 prepared by electrochemical lithiation is compared to the quantum spin liquid candidate compound Li 2 ScMo 3 O 8 prepared through high-temperature solid-state methods, which has a slightly different structural stacking sequence but a similar kagome-derived network. Magnetic measurements are supported by first-principles calculations, showing that electrons remain localized on the Mo clusters throughout the doping series. As x is varied in Li x ScMo 3 O 8 , the measurements and calculations reveal the evolution from a diamagnetic band insulator at x = 1 to a geometrically frustrated magnet at x = 2, back to a diamagnetic insulator at x = 3. These results indicate a likelihood of strong coupling between the degree of Li disorder and charge/magnetic ordering over the Mo 3 clusters.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.
In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Pressure-induced insulator-to-metal transition in the quantum spin liquid candidate lithium ytterbium diselenide
Metallization of quantum spin liquid (QSL) materials has long been considered as a potential route toward unconventional superconductivity. Here, we investigate the pressurization of lithium ytterbium diselenide (LiYbSe 2 ), a three-dimensional QSL candidate with a pyrochlore structure. High-pressure X-ray diffraction (up to 15 GPa) and Raman spectroscopy (up to 48 GPa) reveal no significant structural changes within this pressure range. Remarkably insulating, LiYbSe 2 exhibits a resistance below 10 5 Ω only at pressures exceeding 25 GPa, accompanied by a gradual reduction of band gap upon compression. Interestingly, an insulator-to-metal transition occurs around 68 GPa, and the metallic behavior persists up to 123.5 GPa, the highest pressure achieved in this study. A possible sign of magnetic transitions is also observed. The insulator-to-metal transition in LiYbSe 2 under high pressure presents an ideal platform to explore the pressure effects on QSL candidates of spin-1/2 Yb 3+ systems with various lattice patterns.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
K 2 CoS 2 : A two-dimensional in-plane antiferromagnetic insulator
Recent discovery of two-dimensional (2D) magnetic materials has brought magnetism to the flatland and opened up exciting opportunities for the exploration of fundamental physics as well as novel device applications. Here, we predict a thermodynamically stable 2D magnetic material, ${\mathrm{K}}_{2}{\mathrm{CoS}}_{2}$, which retains its in-plane bulk antiferromagnetic (AFM) order down to the monolayer and bilayer limits. Magnetic moments $(2.5{{\mu}}_{B}/\mathrm{Co})$ are found to form a quasi-one-dimensional antiferromagnetically ordered chain of Co atoms. The nonmagnetic electronic spectrum of the monolayer film is found to host flatbands and van Hove singularities, which play a key role in stabilizing the magnetic ground state. Based on classical Monte Carlo simulations, we estimate the Neel temperature for the AFM monolayer to be ${\approx}15\mathrm{K}$. Our study demonstrates that ${\mathrm{K}}_{2}{\mathrm{CoS}}_{2}$ hosts a robust AFM state which persists from the monolayer limit to the bulk material.
2-dimensional systems↗
Production of magnetized electron beam from a DC high voltage photogun
Bunched-beam electron cooling is a key feature of all proposed designs of the future electron-ion collider, and a requirement for achieving the highest promised collision luminosity. At the Jefferson Lab Electron Ion Collider (JLEIC), fast cooling of ion beams will be accomplished via so-called 'magnetized cooling' implemented using a recirculator ring that employs an energy recovery linac. In this contribution, we describe the production of magnetized electron beam using a compact 300 kV DC high voltage photogun with an inverted insulator geometry, and using alkali-antimonide photocathodes. Beam magnetization was assessed using a modest diagnostic beamline that includes YAG view screens used to measure the rotation of the electron beamlet passing through a narrow upstream aperture. Magnetization results are presented for different gun bias voltages and for different laser spot sizes at the photocathode, using 532 nm lasers with DC and RF time structure. Photocathode lifetime was measured at currents up to 4.5 mA, with and without beam magnetization.
Al Mamun, Md Abdullah↗
Interplay of magnetism and superconductivity in the compressed Fe-ladder compound BaFe 2 Se 3
Not Available
Ying, Jianjun↗
Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator
We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Epitaxial stabilization of ultra thin films of electron doped manganites
Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evolution of electronic structure across the rare-earth RNiO 3 series
Here, the perovksite rare-earth nickelates, RNiO 3 (R = La… Lu), are a class of materials displaying a rich phase-diagram of metallic and insulating phases associated with charge and magnetic order. Being in the charge transfer regime, Ni 3+ in octahedral coordination displays a strong hybridization with oxygen to form 3d-2p mixed states, which results in a strong admixture of 3d 8 L_ into 3d 7 , where L_ denotes a hole on the oxygen. To understand the nature of this strongly hybridized ground state, we present a detailed study of the Ni and O electronic structure using high-resolution soft X-ray absorption spectroscopy (XAS). Through a comparison of the evolution of the XAS line-shape at Ni L- and O K-edges across the phase diagram, we explore the changes in the electronic signatures in connection with the insulating and metallic phases that support the idea of hybridization playing a fundamental role.
36 MATERIALS SCIENCE↗
Low Thermal Conductivity Support Links for High-Radiation Environments
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36 MATERIALS SCIENCE↗
Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction
Atomically thin chromium triiodide (CrI 3 ) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI 3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). Also, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work shows new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.
2D magnets↗
Spin canting and lattice symmetry in La 2 CuO 4
While the dominant magnetic interaction in La 2 CuO 4 is superexchange between nearest-neighbor Cu moments, the pinning of the spin direction depends on weak anisotropic effects associated with spin-orbit coupling. The symmetry of the octahedral tilt pattern allows an out-of-plane canting of the Cu spins, which is compensated by an opposite canting in nearest-neighbor layers. A strong magnetic field applied perpendicular to the planes can alter the spin canting pattern to induce a weak ferromagnetic phase. In light of recent evidence that the lattice symmetry is lower than originally assumed, we take another look at the nature of the field-induced spin-rotation transition. Comparing low-temperature neutron diffraction intensities for several magnetic Bragg peaks measured in fields of 0 and 14 T, we find that a better fit is provided by a model in which spins rotate within both neighboring planes but by different amounts, resulting in a noncollinear configuration. Finally, this model allows a more consistent relationship between lattice symmetry and spin orientation at all Cu sites.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Demonstration of electron spin imbalance in two dimensional electronic states
We have performed the XMCD (x-ray magnetic circular dichroism) measurements on the topological insulator Bi 2 Se 3 with circularly polarized light. The XMCD measurements were performed without voltage, and with a voltage of 5 mV. The measurement with 5 mV shows very different characteristic at Se 2p 3/2 region. This is due to the spin alignment (magnetic moment) on the surface caused by the spin-momentum locking of the moving electrons by the applied voltage. Our data proves that the surfaces of topological insulator could be used potentially for highly spin polarized nonmagnetic materials for spintronics.
36 MATERIALS SCIENCE↗