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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Engineering High- k /SiGe Interface with ALD Oxide for Selective GeO x Reduction

Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x -rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al 2 O 3 in contrast to HfO 2 on SiGe; yet, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al 2 O 3 /SiGe is discovered using atomic layer deposited (ALD) Al 2 O 3 insertion into or on top of ALD HfO 2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al 2 O 3 /SiGe and HfO 2 /SiGe interfaces with the insertion of Al 2 O 3 into or on top of the HfO 2 oxide. The data is consistent with the Al 2 O 3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism demonstrates that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This finding shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Reaction Parameters on Morphology and Photoluminescence of Intrinsic and Mn-doped ZnS Microspheres Synthesized by Hydrothermal Method

Intrinsic and Manganese (Mn)-doped ZnS microspheres have been synthesized by hydrothermal method. Thiourea and amino acid, and L-histidine have been used as sulfur source and capping agent, respectively. The synthesized materials have been characterized using x-ray diffraction, field emission scanning electron microscopy, photoluminescence (PL) and UV–Vis spectroscopy. The above-said characterizations conveyed the information regarding the crystallinity, existence of microspheres, size and optical properties of synthesized ZnS and Mn-doped ZnS samples. Formation of microspheres of intrinsic and Mn-doped ZnS has been observed when the reaction parameters are kept at 150 °C for 4 h, and similarly, the micropores have been noticed when reaction parameters are kept at 150 °C for 8 h. The PL of ZnS microspheres shows multiple defect emissions. The nature of PL for pure ZnS has been regulated based on reaction parameters. Doping of Mn in the ZnS enhances the PL emission. This study reveals the role of reaction parameters and effect of Mn doping on tuning the morphology and emission behavior of ZnS microspheres.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Effect of H{sup +} implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Coherent 3D nanostructure of γ-Al{sub 2}O{sub 3}: Simulation of whole X-ray powder diffraction pattern

The structure and nanostructure features of nanocrystalline γ-Al{sub 2}O{sub 3} obtained by dehydration of boehmite with anisotropic platelet-shaped particles were investigated. The original models of 3D coherent nanostructure of γ-Al{sub 2}O{sub 3} were constructed. The models of nanostructured γ-Al{sub 2}O{sub 3} particles were first confirmed by a direct simulation of powder X–Ray diffraction (XRD) patterns using the Debye Scattering Equation (DSE) with assistance of high-resolution transmission electron microscopy (HRTEM) study. The average crystal structure of γ-Al{sub 2}O{sub 3} was shown to be tetragonally distorted. The experimental results revealed that thin γ-Al{sub 2}O{sub 3} platelets were heterogeneous on a nanometer scale and nanometer-sized building blocks were separated by partially coherent interfaces. The XRD simulation results showed that a specific packing of the primary crystalline blocks in the nanostructured γ-Al{sub 2}O{sub 3} particles with formation of planar defects on (001), (100), and (101) planes nicely accounted for pronounced diffuse scattering, anisotropic peak broadening and peak shifts in the experimental XRD pattern. The identified planar defects in cation sublattice seem to be described as filling cation non-spinel sites in existing crystallographic models of γ-Al{sub 2}O{sub 3} structure. The overall findings provided an insight into the complex nanostructure, which is intrinsic to the metastable γ-Al{sub 2}O{sub 3} oxide. - Highlights: • Thin plate-like crystallites of γ-Al{sub 2}O{sub 3} were obtained. • Models of 3D coherent nanostructure of γ-Al{sub 2}O{sub 3} were constructed. • Models were verified by simulating XRD patterns using the Debye Scattering Equation. • Specific broadening of XRD peaks was explained in terms of planar defects. • Primary crystalline blocks in γ-Al{sub 2}O{sub 3} are separated by partially coherent interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Atomic Origin of the Autocatalytic Reduction of Monoclinic CuO in a Hydrogen Atmosphere

Reducibility is key for the use of bulk metal oxides in chemical transformation involving redox reactions but probing microscopic processes of oxide reduction is challenging. This is because the insulating nature of bulk oxides restricts ion and electron spectroscopic measurements of oxide surfaces. Herein, using a combination of environmental transmission electron microscopy and atomistic modeling, we report direct in-situ atomic-scale observations of the surface and subsurface dynamics and show that the hydrogen induced CuO reduction occurs via the surface decay of Cu-O/Cu bilayer atomic steps, formation of partially reduced CuO superstructure by the self-ordering of O vacancies in the subsurface, and collapse of Cu-O layers in the bulk. In this work, all these substeps can be traced back to the progressively increased concentration and activity of O vacancies in the surface and subsurface of the oxide, thereby leading to the self-accelerated oxide reduction. These results demonstrate the microscopic details that may have broader applicability in modulating various redox processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Native lattice strain induced structural earthquake in sodium layered oxide cathodes

Abstract High-voltage operation is essential for the energy and power densities of battery cathode materials, but its stabilization remains a universal challenge. To date, the degradation origin has been mostly attributed to cycling-initiated structural deformation while the effect of native crystallographic defects induced during the sophisticated synthesis process has been significantly overlooked. Here, using in situ synchrotron X-ray probes and advanced transmission electron microscopy to probe the solid-state synthesis and charge/discharge process of sodium layered oxide cathodes, we reveal that quenching-induced native lattice strain plays an overwhelming role in the catastrophic capacity degradation of sodium layered cathodes, which runs counter to conventional perception—phase transition and cathode interfacial reactions. We observe that the spontaneous relaxation of native lattice strain is responsible for the structural earthquake (e.g., dislocation, stacking faults and fragmentation) of sodium layered cathodes during cycling, which is unexpectedly not regulated by the voltage window but is strongly coupled with charge/discharge temperature and rate. Our findings resolve the controversial understanding on the degradation origin of cathode materials and highlight the importance of eliminating intrinsic crystallographic defects to guarantee superior cycling stability at high voltages.

25 ENERGY STORAGE↗
DOE OSTI2026

Suppressing Phase Segregation and Improving Stability in Mixed-Halide Perovskites through Spinel Oxide-Directed Epitaxy

Mixed-cation mixed-halide perovskite compositions are essential for achieving the required bandgaps for high-efficiency multijunction photovoltaics, yet their stability remains limited by interfacial defects, phase segregation, and degradation. Here, we introduce spinel oxides as a new family of lattice-matched substrates that enable crystalline, phase-pure, compositionally-uniform, bromide-rich perovskite film growth. The effect of spinel oxides is two-fold: reducing defects at the bottom interface by templating film growth and inducing beneficial compressive strain through mismatch-dependent substrate-perovskite lattice coupling. Spinel oxide substrates facilitate growth of highly crystalline films and eliminate detrimental secondary phases across thicknesses. Using grazing incidence X-ray diffraction, X-ray fluorescence, cathodoluminescence–scanning electron microscopy, cryogenic photoluminescence, and density functional theory, we reveal that Mg-halide bonds at the bottom interface induce lattice mismatch-dependent compressive strain that suppresses halide segregation and further reduces defect formation. In addition, films grown on spinel oxides maintain over 87% of the perovskite phase after 12 h under 100% relative humidity, as monitored by in situ grazing incidence wide-angle X-ray scattering (GIWAXS), compared to less than 70% for control samples. This work extends lattice matching from vapor-deposited epitaxial semiconductors to solution-processed halide perovskites to establish a broadly applicable strategy for defect suppression, phase homogenization, and long-term stability. Based on the fundamental science explored here, we set the stage for the development of lattice-matched spinel oxide charge transport layers to be integrated into perovskite solar cells and other optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

TEM Approaches for Microstructure-Informed Prediction of Mechanical Properties in Structural Alloys

Predicting the mechanical performance of structural alloys from their evolving microstructure remains a major challenge in materials science, particularly for nuclear structural materials, where irradiation-induced defects span multiple types and length scales and interact through complex mechanisms. The dispersed barrier hardening (DBH) [1] and Friedel–Kroupa–Hirsch (FKH) [2,3] models have been widely used to evaluate the hardening contributions of individual obstacles and to estimate tensile strength from quantified microstructures; however, when multiple size-dependent obstacles coexist and evolve, predicting temperature-dependent tensile strength becomes significantly more complex, and a fully consistent hardening model is still lacking. Transmission electron microscopy (TEM) plays a central role in refining hardening models and enabling predictive assessments of tensile strength evolution by providing quantitative characterization of dislocations, irradiation-induced defects (e.g., dislocation loops and cavities), precipitates, and grain structure (Fig. 1.). These experimentally measured defect densities are incorporated into physically based hardening models with size- and shape- dependent obstacle strengths [4], using root-sum-square superposition for obstacles of comparable strength and linear superposition for dissimilar ones [5]. In addition, recent advances in TEM [6-8], including high-resolution imaging, 4D-STEM strain mapping, EDS/EELS elemental analysis, and flash-polishing-based TEM specimen preparation and extraction-replica methods (Fig. 2), further improve the accuracy of microstructural quantification. By comparison with prior studies as well as our own results, we show that when TEM-derived microstructural information is carefully integrated with physically grounded hardening models, yield strength (or irradiation-induced hardening) measured at room temperature can be predicted with good quantitative agreement across multiple alloy classes. In-situ TEM combined with high-temperature mechanical testing represents an important next step for refining hardening models by directly probing dislocation–obstacle interactions across varying irradiation doses and temperatures [9]. Because the barrier strength factor (α) depends on both temperature and obstacle size, it should not be treated as a constant fitting parameter; rather, it must be explicitly evaluated to achieve physically meaningful predictions of mechanical behaviour at operating temperatures. This presentation therefore discusses why all strengthening contributions (e.g., Peierls stress, solid-solution strengthening, voids, bubbles, dislocation loops, dislocation lines, and grain boundaries) must be considered collectively, why appropriate superposition methods are essential when obstacles possess different barrier strength factors, how hardness measurements can be meaningfully related to tensile properties, and how TEM-derived microstructural information can be systematically incorporated into hardening models. More broadly, it outlines a pathway toward microstructure-informed prediction of mechanical properties and supports the goal of establishing science-based tools for evaluating structural materials in extreme environments [10].

Lin, Yan-Ru [ORNL] (ORCID:0000000339991473)↗
DOE OSTI2019

Corrosion Behavior of Zinc-Nickel and Graphene Layered Structures on Steel Substrates

Large–area single layers of graphene are synthesized using chemical vapor deposition techniques and are assembled onto steel substrates that are finished with a thin layer of electrodeposited zinc–nickel (ZnNi). Atomic force microscopy combined with Raman spectroscopy is used to determine the number of the assembled graphene layers and to characterize the defects in their crystal structure. The graphene–ZnNi–steel layered specimens are exposed to a salt–fog environment. The defects in the structure of the graphene single layers are found to accelerate corrosion and the formation of a resistive oxide layer. The chemical composition and element map of the reacted surfaces are studied by x–ray photoelectron spectroscopy. In conclusion, the electrical properties of the samples before and after the salt–fog testing are evaluated using sheet resistance measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Abstract Ever‐increasing demand on electronic devices with ultrahigh‐density non‐volatile data storage has attracted great interest in novel ferroelectric memories based on conductive ferroelectric domain walls. Embedded in an insulating material, ferroelectric domain walls have the capability of being (re)created, displaced, erased, and altered in their spatial configurations and electronic characteristics. However, the domain wall conductivities are in most cases not yet sufficiently high to ensure the current density required to drive read‐out circuits operating at high speeds. In this work, a giant domain wall current (>10 µA) of a single charged domain wall is obtained through conductive atomic force microscopy with a bias field of 4 V. This is achieved in self‐assembled BiFeO 3 nanocrystals grown by sol‐gel method on Nb‐doped SrTiO 3 substrates. Local configurations of domains and domain wall types are studied using vector piezoresponse force microscopy and high‐resolution transmission electronic microscopy. The enhancement of the wall current is shown to be due to the formation of conducting pathways of charged defects accumulated along domain walls and traversing the nanocrystals. The diverse domain walls can be manipulated by electric field in a perpendicular architecture. The perpendicular array structure of BiFeO 3 nanocrystals should have great potentials for developing perpendicular nanoelectronic prototypes.

Liu, Lisha↗
DOE OSTI2023

Beneficial Effects of La 0.5 Sr 0.5 CoO 3 Coatings on Thin‐Film LiMn 2 O 4 Cathodes for Lithium Ion Batteries

Abstract The severe capacity loss of spinel LiMn 2 O 4 (LMO) limits the utility of this otherwise promising lithium ion battery cathode material. One of the strategies to mitigate capacity fade is applying a coating on LMO particle surfaces. While this approach yields promising results, there is limited understanding of mechanisms whereby coatings improve LMO capacity retention. Herein, the effects of a new protective coating material, La 0.5 Sr 0.5 CoO 3 (LSCO), in a thin‐film battery geometry that is amenable to fundamental studies of electrode processes, are reported. RF sputtering deposition is used to produce high quality 25–100 nm LMO cathodes on Al 2 O 3 substrates with an intervening Pt/Ti back‐side contact layer. Cycling of the un‐coated cathodes results in capacity loss of 18% over 300 cycles. Adding a 2 nm LSCO layer reduces the capacity loss to 3%. While this may be due in part to reduced Mn dissolution, scanning transmission electron microscopy results indicate that the coating helps to preserve crystallinity and reduce lattice structure distortion due to inhibited formation of defect tetragonal spinel. Three‐electrode electrochemical impedance spectroscopy results reveal that the LSCO coating increases charge transfer and ohmic resistances, but the increases are generally too small to significantly impact cell performance even at high C‐rates.

25 ENERGY STORAGE↗
DOE OSTI2024

Nanocompression of 20 nm Silver Nanoparticles: In situ Aberration‐Corrected TEM and Atomistic Simulations

Single‐crystalline nanoparticles play an increasingly important role in a wide variety of fields including pharmaceuticals, advanced materials, catalysts for fuel cells, energy materials, as well as environmental detection and monitoring. Yet, the deformation mechanisms of very small nanoparticles are still poorly understood, in particular the role played by single dislocations and their interaction with surfaces. Here, in this work, silver nanoparticles with particularly small dimensions (≈20 nanometers in diameter) are compressed in situ in an aberration‐corrected transmission electron microscopy (TEM) and molecular dynamics (MD) simulations. During compression, the emergence of both dislocations and nanotwins are observed. However, these defects prove to be unstable and disappear upon removal of the indenter. Atomistic simulations confirm the role played by image stresses associated with the nearby surfaces and the reduction in dislocation line length as it approaches the free surface, thereby supporting the experimental observations. These results provide justification for the frequent observation of the absence of dislocations in nanoparticles of a few nanometers in size during in situ experiments, even after significant deformation. This phenomenon contributes to the self‐healing of samples through dislocation ejection toward the surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Sintering Temperature on Density and Mechanical Properties of Solid-State Sintered Silicon Carbide Ceramics and Evaluation of Failure Origin

Densified silicon carbide (SiC) is prepared through dry pressing of SiC powder followed by pressureless sintering in the presence of boron carbide and carbon as the additives. Sintering of SiC parts shows the increase in density with the increase in temperature (1950-2180 °C) by resulting in higher than 98% relative density (RD) at 2150 °C and above for 1 h. Sintered specimens are evaluated concerning the phase, microstructure and mechanical properties including hardness and flexural strength. The machined surface of SiC parts with about 98% RD is studied for the origin of failure. The estimated size of critical flaws (32-110 µm) based on flexural strength and fracture toughness indicates that machining defects are one of the primary reasons for failure in SiC ceramics. The order of magnitude of defects on machined surfaces of sintered SiC by SEM studies is found to be comparable with the estimated size of critical flaws. The failure behavior of SiC is discussed with the help of Weibull statistics with respect to the variation of four-point flexural strength.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Defect Characterization Through Automated Laser Track Trace Identification in SLM Processes Using Laser Profilometer Data

This paper presents recent developments in statistical image processing to demonstrate feasibility of layer-by-layer nondestructive inspection for selective laser melting (SLM) of metallic parts. A matrix of 10 mm × 10 mm stainless 316 squares was deposited with the first row consisting of just the sintered surface, Row 2 a single layer, Row 3 with 2 layers and so on. These layers were scanned to emulate the layer-by-layer collection of top surface geometry using a laser sensor. The resultant data were utilized to generate ISO 25718 roughness parameters and subsequently to perform track identification. This calculation consisted of two salient steps: (1) computing the gradients of surface roughness, which vanish at the peaks and pits, and (2) extracting the scanning direction by taking Hough transform of the geometry. This algorithm was repeated for all layers, and the alignment of the roughness with the rotating scan was observed to be persistent for all layers. Correlation between surface properties obtained along various scan directions and defect probability is explored.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A detailed study of the microstructure and thermal stability of typical SiC fibers

Highlights: • The cross-sectional microstructure and thermal stability of typical SiC fibers were characterized via SEM and TEM. • The SiC fiber with gradient microstructure has better properties than that with uniform microstructure. • The graphite exhibits straight planes on the fiber surface while they're turbostratic inside the fiber. Continuous SiC fibers have attracted increasing research interest for their significant application in aerospace and nuclear energy. Control of inhomogeneity and decrement of defects are crucial for improving the mechanical and high-temperature performance of SiC fibers. Thus an understanding of fine and detailed microstructural and microchemical distribution of SiC fibers is urgently needed. In the present work, the cross-sectional phase distributions, morphologies and defects of amorphous, non-stoichiometric and near-stoichiometric SiC fibers were well characterized. From surface to core, the amorphous and non-stoichiometric fibers exhibited uniform microstructures, but a gradient change along the radial direction was observed in the near-stoichiometric fiber. Nanosized SiC and turbostratic carbon (2–4 nm) were randomly distributed inside the amorphous fiber. A large amount of graphite surrounding SiC grains appears in the non-stoichiometric fiber which possess low strength and weak thermal stability. The near-stoichiometric fiber has transgranular fracturing, high strength and favorable thermal stability, and the graphite planes are turbostratic inside the fiber but straight on the surface. The results of both energy-dispersive X-ray spectrometry measurements and first-principles calculations demonstrate that Al atoms can occupy Si sites in the SiC grains. Our findings offer fine understanding for fabricating SiC fibers with superior properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Moss-Burstein effect in stable, cubic ZrO2: Eu+3 nanophosphors derived from rapid microwave-assisted solution-combustion technique

Highlights: • A rapid and single step approach for the synthesis of Eu{sup +3} doped ZrO{sub 2} nanoparticles. • As formed ZrO{sub 2}: Eu{sup +3} nanoparticles are in cubic phase. • The measured particle size from TEM for as formed sample is found to be 45 nm. • The ZrO{sub 2}: Eu{sup +3} nanoparticles gives emission in the red region. - Abstract: A single step, rapid (2 : Eu{sup +3}nanophosphors. The high temperature cubic ZrO{sub 2} phase is obtained directly using L-serine amino acid as the fuel. The phase is stable, and shows no transformation on calcination (upto 800 °C, 2 h). The method presented here results in a final product with low concentrations of unintentional impurities (carbon 3+ is present in the lattice in concentrations as high as 2.5 mol%. The effect of calcination temperature (400, 600 and 800 °C) on optical and luminescent properties is investigated. Interestingly calcination of this material results in an increase in optical band gap (ΔEg = 0.12 eV), strongly suggesting defect-induced Moss-Burstein (M-B) effect in as-synthesized sample. It is noteworthy that, this is the first report demonstrating defect induced M-B effect in microwave derived ZrO{sub 2}. Using photoluminescence spectra based asymmetric ratio based analysis, it is observed that the increase in symmetry around the Eu{sup 3+} ion is concomitant with the increase in overall point-defect density (which in turn results in M-B effect). There is an increase in PL intensity with calcination, which is attributed to increased crystallinity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Dynamics of Radiation Damage Buildup in Ultrathin Hexagonal Boron Nitride Films under Ion Bombardment

Two-dimensional hexagonal boron nitride (hBN) is attractive for several emerging applications. Ion bombardment can be used to modify the hBN properties. However, the understanding of radiation damage buildup in hBN remains limited. Here, we investigate the effects of the dose rate and ion mass on radiation damage buildup by studying 40 nm-thick hBN films bombarded at room temperature with 500 keV 4 He, 15 N, 40 Ar, and 129 Xe ions and comparing with results for ion bombardment of polycrystalline hBN ceramics. Raman spectroscopy is used to quantify damage buildup, and transmission electron microscopy is used for microstructural analysis. Experiments are complemented by molecular dynamics simulations of the formation and evolution of point defects. Lighter ions are found to be more efficient at disordering hBN than heavier ions. This observation points to a critical role of intracascade defect processes. In contrast, a negligible dose rate effect observed suggests limited intercascade defect dynamic annealing processes for these irradiation conditions. These findings provide a fundamental basis for hBN defect engineering.

2D materials↗
DOE OSTI2016

Rapid mapping of polarization switching through complete information acquisition

Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microstructure on the nanometre scale, necessitating spatially resolved high-resolution studies of these phenomena. Classical piezoresponse force microscopy and spectroscopy, although providing necessary spatial resolution, are fundamentally limited in data acquisition rates and energy resolution. This limitation stems from their two-tiered measurement protocol that combines slow (~1 s) switching and fast (~10 kHz–1 MHz) detection waveforms. Here we develop an approach for rapid probing of ferroelectric switching using direct strain detection of material response to probe bias. This approach, facilitated by high-sensitivity electronics and adaptive filtering, enables spectroscopic imaging at a rate 3,504 times faster the current state of the art, achieving high-veracity imaging of polarization dynamics in complex microstructures.

36 MATERIALS SCIENCE↗