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At least 991 records · Page 55

Structure and energetics of nanotwins in cubic boron nitrides

Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

First-principles studies of the local structure and relaxor behavior of Pb ( Mg 1 / 3 Nb 2 / 3 ) O 3 – PbTiO 3 -derived ferroelectric perovskite solid solutions

We have investigated the effect of transition-metal dopants on the local structure of the prototypical 0.75Pb(Mg 1/3 Nb 2/3 )O 3 –0.25PbTiO 3 relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg and is even comparable to that of Nb. The polarization of these systems is also increased, especially for the Cu-doped solution, due to the large polarizability of Cu and Zn. As a result, the predicted maximum dielectric constant temperatures T m are increased. On the other hand, the replacement of a Ti atom with a Mo or Tc atom dramatically decreases the displacements of the cations and the polarization, and thus, the T m values are also substantially decreased. Here, the higher T m cannot be explained by the conventional argument based on the ionic radii of the cations. Furthermore, we find that Cu, Mo, or Tc doping increases the cation displacement disorder. Here, the effect of the dopants on the temperature dispersion ΔT m , which is the change in T m for different frequencies, is also discussed. Our findings lay the foundation for further investigations of unexplored dopants.

25 ENERGY STORAGE↗

Structural transformation in Ge x S 100–x (10 ≤ x ≤ 40) network glasses: Structural varieties in short-range, medium-range, and nanoscopic scale

Precise x-ray diffraction measurements using high-energy x rays of synchrotron radiation and systematic Raman scattering measurements were carried out for Ge x S 100–x (10 ≤ x ≤ 40) network glasses. The structural models of the network glasses were proposed based on the results. In the stoichiometric composition Ge 33 S 67 , GeS 4 tetrahedral units are connected forming either corner-sharing or edge-sharing structures. In the S-rich glasses, S atoms are inserted between two neighboring GeS 4 tetrahedra, resulting in a flexible floppy network. In a much more S-rich region, some S 8 ring molecules are isolated from the network, and assemble to form a crystal in nanoscopic scale. In this respect, Ge 10 S 90 samples are regarded as crystallized glasses. In the Ge-rich region, the GeS 4 tetrahedra are connected with bridging Ge atoms. The connection makes a new rigid network. Furthermore, the bridging Ge-S bond is weaker than the intratetrahedron bond, and this leads to drastic changes in the optical properties.

36 MATERIALS SCIENCE↗

Quasiparticle self-consistent GW band structures and phase transitions of LiAlO 2 in tetrahedrally and octahedrally coordinated structures

In this work, a first-principles computational study is presented of various phases of LiAlO 2 . The relative total energies and equations of state of the α, β, and γ phases are determined after structural relaxation of each phase. The β and γ tetrahedral phases are found to be very close in energy and lattice volume with the γ phase having the lowest energy. The octahedral α phase is a high-pressure phase and the transition pressure from the γ and β phases to α is determined to be about 1 GPa. The electronic band structures of each phase at their own equilibrium volume are determined using the quasiparticle self-consistent (QS) GW method as well as using the 0.8 Σ approach in which the QS GW self-energy is reduced by a factor of 0.8 to correct for the underscreening of W in QS GW. The effective masses of the band edges and the nature of the band gaps are presented. The lowest energy γ phase is found to have a pseudodirect gap of 7.69 eV. The gap is direct at Γ but corresponds to a dipole forbidden transition. The imaginary part of the dielectric function and the absorption coefficient are calculated in the long-wavelength limit and the random phase approximation, without local field or electron-hole interaction effects for each phase, and their anisotropies are discussed. Si doping on the Al site is investigated as a possible n-type dopant in γ-LiAlO 2 using a 128-atom supercell corresponding to 3.125% Si on the Al sublattice in the generalized gradient approximation and a smaller 16-atom cell with 25% Si in the QS GW approximation. The Si is found to significantly perturb the conduction band and lower the gap but a clearly separated deep donor defect level is not found. However, the donor binding energy is still expected to be relatively deep, on the order of a few tenths eV in the hydrogenic effective mass approximation.

36 MATERIALS SCIENCE↗

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Structural phase transition is studied in high quality CrN thin films grown by molecular beam epitaxy on MgO(001) substrates. Cross-sectional transmission electron microscopy and x-ray diffraction reveal that the epitaxial relationship between CrN film and MgO substrate is [100] CrN /[100] MgO , [110] CrN /[110] MgO , and [001] CrN /[001] MgO . The films show tensile strain/compression at the CrN/MgO(001) interface, which relaxes gradually with the film growth. Temperature dependent x-ray diffraction measurements show a first-order structural phase transition. In addition to the experimental measurements, first-principles theoretical calculations have been carried out for finding a stable model for the CrN/MgO interface. Furthermore, these calculations determine two possible models for the interface, where a monolayer of chromium oxide is formed between the CrN and MgO layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural genomics of bacterial drug targets: Application of a high-throughput pipeline to solve 58 protein structures from pathogenic and related bacteria

Antibiotic resistance remains a leading cause of severe infections worldwide. Small changes in protein sequence can impact antibiotic efficacy. Here, we report deposition of 58 X-ray crystal structures of bacterial proteins that are known targets for antibiotics, which expands knowledge of structural variation to support future antibiotic discovery or modifications.

PDB↗

Electronic structure and dynamics of confined atoms

Confined atomic systems are of great importance owing a multitude of possible applications in various areas of science and technology. Of particular interest are atoms encaged in the C 60 molecule, A@C 60 , since the near-spherical symmetry of C 60 simplifies theoretical studies, and the stability of C 60 renders it amenable to experimental examination. Herein a review of investigations of the electronic structure and dynamics of A@C 60 is presented in this manuscript focusing on developments in the last decade. Addressed mainly are how the confinement affects electronic structure properties such as ionization potentials, localization of atomic electrons, Shannon entropy, correlation effects, relativistic interactions, and others. In the area of dynamics, photoionization and e-A@C 60 scattering are reviewed and summarized, and the major effects of confinement on the dynamical properties, e.g., confinement resonances, hybridization, Wigner time delay, are delineated.

74 ATOMIC AND MOLECULAR PHYSICS↗

Milky Way Tomography with K and M Dwarf Stars: The Vertical Structure of the Galactic Disk

We use the number density distributions of K and M dwarf stars with vertical height from the Galactic disk, determined using observations from the Sloan Digital Sky Survey, to probe the structure of the Milky Way disk across the survey’s footprint. Using photometric parallax as a distance estimator we analyze a sample of several million disk stars in matching footprints above and below the Galactic plane, and we determine the location and extent of vertical asymmetries in the number counts in a variety of thin- and thick-disk subsamples in regions of some 200 square degrees within 2 kpc in vertical distance from the Galactic disk. These disk asymmetries present wave-like features as previously observed on other scales and at other distances from the Sun. We additionally explore the scale height of the disk and the implied offset of the Sun from the Galactic plane at different locations, noting that the scale height of the disk can differ significantly when measured using stars only above or only below the plane. Moreover, we compare the shape of the number density distribution in the north for different latitude ranges with a fixed range in longitude and find the shape to be sensitive to the selected latitude window. We explain why this may be indicative of a change in stellar populations in the latitude regions compared, possibly allowing access to the systematic metallicity difference between thin- and thick-disk populations through photometry.

79 ASTRONOMY AND ASTROPHYSICS↗

Quantifying Boreal Forest Structure and Composition Using UAV Structure from Motion

The vast extent and inaccessibility of boreal forest ecosystems are barriers to routine monitoring of forest structure and composition. In this research, we bridge the scale gap between intensive but sparse plot measurements and extensive remote sensing studies by collecting forest inventory variables at the plot scale using an unmanned aerial vehicle (UAV) and a structure from motion (SfM) approach. At 20 Forest Inventory and Analysis (FIA) subplots in interior Alaska, we acquired overlapping imagery and generated dense, 3D, RGB (red, green, blue) point clouds. We used these data to model forest type at the individual crown scale as well as subplot-scale tree density (TD), basal area (BA), and aboveground biomass (AGB). We achieved 85% cross-validation accuracy for five species at the crown level. Classification accuracy was maximized using three variables representing crown height, form, and color. Consistent with previous UAV-based studies, SfM point cloud data generated robust models of TD (r(sup 2) = 0.91), BA (r(sup 2) = 0.79), and AGB (r(sup 2) = 0.92), using a mix of plot- and crown-scale information. Precise estimation of TD required either segment counts or species information to differentiate black spruce from mixed white spruce plots. The accuracy of species-specific estimates of TD, BA, and AGB at the plot scale was somewhat variable, ranging from accurate estimates of black spruce TD (+/−1%) and aspen BA (−2%) to misallocation of aspen AGB (+118%) and white spruce AGB (−50%). These results convey the potential utility of SfM data for forest type discrimination in FIA plots and the remaining challenges to develop classification approaches for species-specific estimates at the plot scale that are more robust to segmentation error.

aboveground biomass↗

Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag 2 SrSiS 4 and Ag 2 SrGeS 4

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on the I2-II-IV-X4 (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of anti-site defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag 2 SrSiS 4 and Ag 2 SrGeS 4 , each found to form in the tetragonal I4¯2m structure of Ag 2 BaGeS 4 . During the synthesis targeting the title compounds, two additional materials, Ag 2 Sr 3 Si 2 S 8 and Ag 2 Sr 3 Ge 2 S 8 , have also been identified. Furthermore, these cubic compounds represent impurity phases during the synthesis of Ag 2 SrSiS 4 and Ag 2 SrGeS 4 . We show through hybrid density functional theory calculations that Ag 2 SrSiS 4 and Ag 2 SrGeS 4 have highly dispersive band edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag 2 SrSiS 4 and Ag 2 SrGeS 4 powders show frequency doubling capabilities in the near-infrared range.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Switch-off slow shock/rotational discontinuity structures in collisionless magnetic reconnection: What to look for in satellite observations: SWITCH-OFF STRUCTURES IN RECONNECTION

In Innocenti et al. (2015) we have observed and characterized for the first time Petschek-like switch-off slow shock/rotational discontinuity (SO-SS/RD) compound structures in a 2-D fully kinetic simulation of collisionless magnetic reconnection. Observing these structures in the solar wind or in the magnetotail would corroborate the possibility that Petschek exhausts develop in collisionless media as a result of single X point collisionless reconnection. Here we highlight their signatures in simulations with the aim of easing their identification in observations. The most notable signatures include a four-peaked ion current profile in the out-of-plane direction, associated ion distribution functions, increased electron and ion anisotropy downstream the SS, and increased electron agyrotropy downstream the RDs.

58 GEOSCIENCES↗

Structural Basis for Metastability in Amorphous Calcium Barium Carbonate (ACBC)

Metastable amorphous precursors are emerging as valuable intermediates for the synthesis of materials with compositions and structures far from equilibrium. Recently, it was found that amorphous calcium barium carbonate (ACBC) can be converted into highly barium-substituted “balcite,” a metastable high temperature modification of calcite with exceptional hardness. A systematic analysis ACBC (Ca 1-x Ba x CO 3 ·1.2H 2 O) in the range from x = 0–0.5 is presented. Combining techniques that independently probe the local environment from the perspective of calcium, barium, and carbonate ions, with total X-ray scattering and a new molecular dynamics/density functional theory simulations approach, provides a holistic picture of ACBC structure as a function of composition. With increasing barium content, ACBC becomes more ordered at short and medium range, and increasingly similar to crystalline balcite, without developing long-range order. This is not accompanied by a change in the water content and does not carry a significant energy penalty, but is associated with differences in cation coordination resulting from changing carbonate anion orientation. Therefore, the local order imprinted in ACBC may increasingly lower the kinetic barrier to subsequent transformations as it becomes more pronounced. This pathway offers clues to the design of metastable materials by tuning coordination numbers in the amorphous solid state.

36 MATERIALS SCIENCE↗

Structural Manipulation of Phase Transitions by Self‐Induced Strain in Geometrically Confined Thin Films

Strain engineering is a well-known method often used to tune material properties in thin films. The most studied sources of strain are lattice mismatch and differential thermal contraction between the substrate and film. However, in materials which undergo a structural phase transition (SPT), a third and often overlooked source of strain may play a very significant role. If the substrate confines the area of the film, the SPT may induce stress which changes the evolution of the transition. This is a 2D analog of the isochoric phase transition between water and ice, where the freezing point drops below 0 °C. To illustrate this, the prototypical Mott insulator V 2 O 3 which has an SPT coupled to a metal–insulator transition is used to show how self-induced strain can drastically alter structural and electronic properties. This effect provides an elegant approach for mapping the phase diagram of the SPT and the transitions coupled to it. Moreover, the magnitude of self-straining is tunable by modifying the substrate morphology. Furthermore, this effect may be important for numerous materials which exhibit an SPT and are subjected to geometrical constraints.

Kalcheim, Yoav↗

Hollow‐Structured Materials for Thermal Insulation

Abstract Heating and cooling represent a significant portion of overall energy consumption of our society. Due to the diffusive nature of thermal energy, thermal insulation is critical for energy management to reduce energy waste and improve energy efficiency. Thermal insulation relies on the reduction of thermal conductivity of appropriate materials that are engineerable in compositions and structures. Hollow‐structured materials (HSMs) show a great promise in thermal insulation since the existence of high‐density gaseous voids breaks the continuity of heat‐transport pathways in the HSMs to lower their thermal conductivities efficiently. Herein, a timely overview of the recent progress in developing HSMs for thermal insulation is presented, with the focus on summarizing the strategies for creating gaseous voids in solid materials and thus synthesizing various HSMs. Systematic analysis of the documented results reveals the relationship of thermal conductivities of the HSMs and the size and density of voids, i.e., reducing the void size below ≈350 nm is more favorable to decrease the thermal conductivity of the HSMs because of the possible confinement effect originated from the nanometer‐sized voids. The challenges and promises of the HSMs faced in future research are also discussed.

Hu, Feng↗

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic-scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I–V characteristics, and high-resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.

dislocation defects↗

Integrating Band Structure Engineering with All-Scale Hierarchical Structuring for High Thermoelectric Performance in PbTe System

We investigated PbTe 1-x Se x -2%Na-y%SrTe system and report a high ZT of 2.3 at 923 K for PbTe 0.85 Se 0.15 -2%Na-4%SrTe. This is achieved by performing electronic band structures modifications as well as all-scale hierarchical structuring and combining the two effects. We find that high ZTs in PbTe 0.85 Se 0.15 -2%Na-4%SrTe are possible at all temperature from 300K to 873K with an average ZT ave of 1.23. The high performance in PbTe 1-x Se x -2%Na-y%SrTe could be achieved by either choosing PbTe-2Na-4SrTe or PbTe 0.85 Se 0.15 -2Na as a matrix. At room temperature the carrier mobility shows negligible variations as SrTe fraction is increased, however the lattice thermal conductivity is significantly reduced from ~ 1.1 Wm-1K-1 to ~ 0.82 Wm -1 K -1 when 5.0 % SrTe is added. The lattice thermal conductivity at 923 K decreases from ~ 0.59 Wm-1K-1 to ~ 0.43 Wm -1 K -1 . The power factor maxima of PbTe 1-x Se x -2Na-4SrTe shift systematically to higher temperature with rising Se fractions due to bands divergence. The maximum power factors reach ~ 27 μWcm -1 K -2 , ~ 30 μWcm -1 K -2 , ~ 31 μWcm -1 K -2 for the x = 0, 0.05, and 0.15 samples peak at 473K, 573K and 623K,

36 MATERIALS SCIENCE↗