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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Shock compression of cemented tungsten carbides to 100 GPa: Structure of shock waves, Hugoniot relations, and strength

Plate impact experiments are conducted on cemented tungsten carbides (WC) with a 3.7 and 6.0 wt. % cobalt binder to better understand their dynamic, high-pressure response to 100 GPa. The measured wave profiles show propagation of steady structured waves. Standard impedance matching procedures are used to determine the Hugoniot relations in the shock velocity–particle velocity (U s –v p ) and Hugoniot stress–specific volume (P–V/V o ) planes. The Hugoniot elastic limit of the samples is controlled by ductility of the Co binder and is determined to be 4.45 ± 0.29 GPa for cemented WC with 3.7 wt. % cobalt and 3.72 ± 0.24 GPa for a 6.0 wt. % cobalt binder. Both grades show a non-linear U s –v p relationship depending on whether the particle velocity is in the strength dominated or hydrodynamic regime. In the strength dominated regime, a non-linear decrease in U s is observed as v p increases from ambient to the material’s hydrodynamic limit. In the hydrodynamic regime, the U s –v p Hugoniot is linear and is determined to be U s = 4.97(±0.006)+1.446(±0.018)v p km/s for WC with 3.7 wt. % Co and U s = 4.93(±0.006)+1.463(±0.017)v p km/s for 6 wt. % Co. Both WC grades indicate shear-stress hardening with mean stress immediately after yield, followed by pressure softening, and then a sharp fall in stress carrying capacity as the mean stress is increased to ≈70 GPa (hydrodynamic limit) and beyond. This behavior is in contrast to pure WC ceramics, which show continued shear-stress hardening with mean stress to ≈80 GPa.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Triangular cross-section grating couplers for integrated quantum nanophotonic hardware in silicon carbide

We design, fabricate, and characterize fishbone grating couplers for triangular cross-section photonics in silicon carbide compatible with color center integration. The periodic and aperiodic grating coupler designs are optimized to outcouple up to 31% of light in the fundamental TE mode of a triangular waveguide. The devices are fabricated using an ion beam etching process in a 4H–SiC sample implanted with NV center ensembles. The room-temperature transmission and the cryogenic NV center photoluminescence collection measurements indicate experimental grating coupler efficiency of up to 24%. This result provides a scalable method to efficiently extract color center light from SiC quantum nanophotonic devices to free-space optics.

Saha, Pranta↗
DOE OSTI2025

High-rate magnetron sputter deposition of low-stress boron carbide films on tilted substrates

Boron carbide is attractive for several applications, including nuclear fuel capsules for inertial confinement fusion (ICF). The fabrication of ICF capsules involves the deposition of ultrathick coatings with density and thickness uniformity on submicron length scales on non-planar (spherical) substrates. Such a deposition requires control of the deposition rate, residual stress, and film microstructure. Here, we systematically study the direct-current magnetron sputter deposition of B 4 C coatings with a full-face-erosion magnetron source as a function of substrate tilt and Ar working gas pressure. Film properties are correlated with results of plasma diagnostics and predictions of Monte Carlo simulations of ballistic sputtering and gas-phase transport. The fabrication of low-stress amorphous B 4 C films with deposition rates of 7μm/h is demonstrated.

Kawasaki, K. [Lawrence Livermore National Laborato↗
DOE OSTI2019

Pyrolytic Carbon Coating Effects on Oxide and Carbide Kernels Intended for Nuclear Fuel Applications

The coating of nuclear fuel kernels with pyrolytic carbon (PyC) is a well-understood practice dating back over half a century. In spite of decades of studies related to these coatings, no study has yet investigated the effect of the PyC deposition coating process on the kernels themselves. In this study, the composition and crystallographic phase of kernel materials were observed to change after exposure to the thermal and chemical environment of PyC coating process. Specifically, the coating process increased the fraction of high carbon content phase within carbide microsphere kernels, with W 2 C containing microspheres driven towards WC, and UC containing microspheres driven towards UC 2 . Oxide microspheres consisted of a mixture of two crystalline phases. The monoclinic phase within yttria-stabilized zirconia microspheres was eliminated by the coating process resulting in a purely tetragonal phase. Hafnium oxide microspheres were more stable showing no detectable change in composition or crystal structure after coating.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma

Boron carbide (B 4 C) is an attractive inertial confinement fusion ablator material. The fabrication of B4C ablators by magnetron sputtering requires process optimization. To increase process flexibility, here we explore high-power impulse magnetron sputter (HiPIMS) deposition of B 4 C in pure Ar and mixed Ar-Ne plasmas. Here, the results show that higher plasma discharge currents can be reached with a mixed Ar-Ne plasma in the entire working pressure range studied (5 𝑡𝑜 50 mTorr). At 45 mTorr with 10% of Ne in the Ar-Ne mix, high peak target current densities of ~1 A cm −2 were demonstrated. Films deposited with such a mixed Ar-Ne plasma with a full-face erosion magnetron source on substrates biased at −25 V exhibited higher density and improved mechanical properties, albeit with higher compressive residual stresses compared to the case of HiPIMS deposition in a pure Ar plasma. This work demonstrates additional process flexibility of the HiPIMS discharge mode for the deposition of B 4 C coatings.

Ablator capsule↗
DOE OSTI2025

Superior plastic flow stability of self-patterned carbide – amorphous ceramic nanostructures

Amorphous ceramics and carbides exhibit superb strength but poor plasticity. Here, we synthesized TiC-SiOC nanostructures with TiC-nanocarbides embedded in amorphous ceramic SiOC by co-sputtering followed by high-temperature annealing and/or irradiation. TiC-SiOC nanostructures exhibit high strength and good plastic flow stability even after heavy irradiation, 7 GPa at room temperature and 3.6 GPa at 700 ℃ with a uniform strain of about 10%∼18%. The uniform deformation is accommodated by the shearing of amorphous ceramic and the rotation of nanocarbides. Nanocarbides inhibit the propagation of shear banding in amorphous SiOC, and amorphous-crystal interfaces act as sinks to manage irradiation-induced defects.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Phase field model of uranium carbide solidification through a combined KKS and orientation field approach

A Phase Field model is developed combining the Orientation Field approach to modeling solidification with the Kim, Kim, Suzuki (KKS) method of modeling binary alloys. These combined methods produce a model capable of simulating randomly oriented second phase dendrites with discrete control of the solid-liquid interface energy and thickness. The example system of carbon (C) in a liquid uranium (U) melt is used as a test for the model. The formation of uranium carbide (UC) within a liquid U melt is simulated for isothermal conditions and compares well with experiments.

Bair, Jacob L. (ORCID:0000000333273323)↗
DOE OSTI2022

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗
DOE OSTI2024

High-power test results for a cylindrical-shell silicon carbide higher-order-mode damper

The next high-current Electron-Ion Collider (EIC) is a new accelerator to be built at Brookhaven National Laboratory in collaboration with Thomas Jefferson National Accelerator Facility. In the EIC Electron Storage Ring (ESR), there will be beam currents of up to 2.5 A, which will excite massive higher-order-mode (HOM) power in the 17 single-cell 591 MHz superconducting radio-frequency (SRF) cavities. Damping the HOM power in the ESR SRF cavities is a challenge. A room temperature cylindrical shell shape silicon carbide (SiC) beamline HOM absorber (BLA) was chosen as the baseline design, due to its broadband and high-power capability, and previous demonstrations at other accelerator facilities, albeit at much lower power. Because the EIC BLA HOM power dissipation is significantly greater than the previous applications, it is imperative to carry out high-power testing to determine the maximum device performance levels achievable for thermal transport, rf breakdown, and mechanical stress, prior to finalizing the design. A SiC HOM absorber with a state-of-the-art geometry size was prototyped to verify the shrink-fit technique, test outgassing rate, and high-power handling capability. This paper presents the HOM damper’s prototyping and test results. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies

Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, in this study, we use one such system, vanadium (V 4+ ) in silicon carbide, to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all-optical measurements of temperature-dependent spin relaxation times (T 1 ). By using this technique, and lowering the temperature from approximately 2 K to approximately 100 mK, we observe a remarkable 4-orders-of-magnitude increase in spin T 1 across all measured sites, with site-specific values ranging from 57.1 ms to 27.9 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain tuning to enable qubit operation at higher temperatures. These results position V 4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Theoretical study of intrinsic defects in cubic silicon carbide 3C-SiC

Using the local moment counter charge (LMCC) method to accurately represent the asymptotic electrostatic boundary conditions within density functional theory supercell calculations, we present a comprehensive analysis of the atomic structure and energy levels of point defects in cubic silicon carbide (3C-SiC). Finding that the classical long-range dielectric screening outside the supercell induced by a charged defect is a significant contributor to the total energy. we describe and validate a modified Jost screening model to evaluate this polarization energy. This leads to bulk-converged defect levels in finite size supercells. With the LMCC boundary conditions and a standard Perdew-Burke-Ernzerhof (PBE) exchange correlation functional, the computed defect level spectrum exhibits no band gap problem: the range of defect levels spans ~2.4 eV, an effective defect band gap that agrees with the experimental band gap. Comparing with previous literature, our LMCC-PBE defect results are in consistent agreement with the hybrid-exchange functional results of Oda et al. [J. Chem. Phys. 139, 124707 (2013)] rather than their PBE results. The difference with their PBE results is attributed to their use of a conventional jellium approximation rather than the more rigorous LMCC approach for handling charged supercell boundary conditions. The difference between standard dft and hybrid functional results for defect levels lies not in a band gap problem but rather in solving a boundary condition problem. The LMCC-PBE entirely mitigates the effect of the band gap problem on defect levels. The more computationally economical PBE enables a systematic exploration of 3C-SiC defects, where, most notably, we find that the silicon vacancy undergoes Jahn-Teller-induced distortions from the previously assumed T d symmetry, and that the divacancy, like the silicon vacancy, exhibits a site-shift bistability in p -type conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Equation of state, adiabatic sound speed, and Gruneisen coefficient of boron carbide along the principal Hugoniot to 700 GPa

We describe a new equation of state (EOS) experimental technique that enables the study of thermodynamic derivatives into the TPa regime and apply it to boron carbide (B4C). The data presented here are the first principal Hugoniot sound speed measurements reported using a laser-driven shock platform, providing a new means to explore the high-pressure off-Hugoniot response of opaque materials. Furthermore, the extended B4C Hugoniot suggests the presence of a new high-pressure phase, as recently predicted by molecular dynamics simulations, adding to the complexity of the existing phase diagram.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Phase diagram of boron carbide with variable carbon composition

Boron carbide exhibits intrinsic substitutional disorder over a broad composition range. The structure consists of 12-atom icosahedra placed at the vertices of a rhombohedral lattice, together with a 3-atom chain along the threefold axis. In the high-carbon limit, one or two carbon atoms can replace boron atoms on the icosahedra while the chains are primarily of type C-B-C. We fit an interatomic pair interaction model to density-functional-theory total energies to investigate the substitutional carbon disorder. Monte Carlo simulations with sampling improved by replica exchange and augmented by two-dimensional multiple histogram analysis predict three phases. The low-temperature, high-carbon-composition monoclinic Cm structure disorders through a pair of phase transitions, first via an Ising-like transition to a monoclinic centrosymmetric state with space group C2/m, then via a first-order three-state Potts-like transition to the experimentally observed rhombohedral R$\bar3$ m symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

I n s i t u observation of a phase transition in silicon carbide under shock compression using pulsed x-ray diffraction

The behavior of silicon carbide (SiC) under shock compression is of interest due to its applications as a high-strength ceramic and for general understanding of shock-induced polymorphism. Here we use the Matter in Extreme Conditions beamline of the Linac Coherent Light Source to carry out a series of time-resolved pump-probe x-ray diffraction measurements on SiC laser-shocked to as high as 206 GPa. Experiments on single crystals and polycrystals of different polytypes show a transformation from a low-pressure tetrahedral phase to the high-pressure rocksalt-type (B1) structure. We directly observe coexistence of the low- and high-pressure phases in a mixed-phase region and complete transformation to the B1 phase above 200 GPa. The densities measured by x-ray diffraction are in agreement with both continuum gas-gun studies and a theoretical B1 Hugoniot derived from static-compression data. Time-resolved measurements during shock loading and release reveal a large hysteresis upon unloading, with the B1 phase retained to as low as 5 GPa. The sample eventually reverts to a mixture of polytypes of the low-pressure phase at late times. Our study demonstrates that x-ray diffraction is an effective means to characterize the time-dependent structural response of materials undergoing shock-induced phase transformations at megabar pressures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Benchmarking boron carbide equation of state using computation and experiment

Boron carbide ( B 4 C ) is of both fundamental scientific and practical interest due to its structural complexity and how it changes upon compression, as well as its many industrial uses and potential for use in inertial confinement fusion (ICF) and high-energy density physics experiments. Here, we report the results of a comprehensive computational study of the equation of state (EOS) of B 4 C in the liquid, warm dense matter, and plasma phases. Our calculations are cross-validated by comparisons with Hugoniot measurements up to 61 megabar from planar shock experiments performed at the National Ignition Facility (NIF). Our computational methods include path integral Monte Carlo, activity expansion, as well as all-electron Green's function Korringa-Kohn-Rostoker and molecular dynamics that are both based on density functional theory. We calculate the pressure-internal energy EOS of B 4 C over a broad range of temperatures ( ~ 6 × 10 3 – 5 × 10 8 K) and densities (0.025–50 g / cm 3 ). We assess that the largest discrepancies between theoretical predictions are ≲ 5 % near the compression maximum at 1– 2 × 10 6 K. This is the warm-dense state in which the K shell significantly ionizes and has posed grand challenges to theory and experiment. By comparing with different EOS models, we find a Purgatorio model (LEOS 2122) that agrees with our calculations. The maximum discrepancies in pressure between our first-principles predictions and LEOS 2122 are ~ 18 % and occur at temperatures between 6 × 10 3 – 2 × 10 5 K, which we believe originate from differences in the ion thermal term and the cold curve that are modeled in LEOS 2122 in comparison with our first-principles calculations. To account for potential differences in the ion thermal term, we have developed three new equation-of-state models that are consistent with theoretical calculations and experiment. We apply these new models to 1D hydrodynamic simulations of a polar direct-drive NIF implosion, demonstrating that these new models are now available for future ICF design studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Evidence of molecular hydrogen trapped in two-dimensional layered titanium carbide-based MXene

Two-dimensional transition metal carbides and nitrides (MXenes) are one of the largest and fastest growing families of materials. The presence of molecular hydrogen at ambient conditions in a MXene (Ti 3 C 2 T x , where T x represents a surface terminating species, including O, OH, and F) material is revealed here by inelastic and elastic neutron scatterings. The inelastic neutron-scattering spectrum measured at 5 K shows a peak at 14.6 meV, presenting a clear indication of the presence of parahydrogen in the MXene synthesized using 48% hydrofluoric acid and annealed at 110°C in vacuum prior to the measurement. An increase in the measurement temperature gradually reduces the peak intensity and increases the peak width due to the mobility of the molecular hydrogen in confinement. The presence of molecular hydrogen is confirmed further from the observed elastic intensity drop in a fixed energy-window scan of elastic intensity measurements in the temperature range of 10–35 K. Using milder etching conditions, ion intercalation, or an increase in the annealing temperature all result in the absence of the trapped hydrogen molecules in MXene. Here, the results of this paper can guide the development of MXene materials with desired properties and improve our understanding of the behavior of MXenes in applications ranging from supercapacitors to hydrogen evolution reaction catalysis and hydrogen storage.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗