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At least 1,009 records · Page 56

Structure determination of the intermediate phase of PbSe using experiments and calculations

The pressure-induced structure transitions of PbSe were investigated at pressures up to 50 GPa in diamond anvil cells using synchrotron powder and single-crystal X-ray diffraction methods. A phase transition from the initial NaCl-type structure to an intermediate phase was observed at 4.8 GPa, followed by another phase transition to a CsCl-type structure at 19.5 GPa, which is in agreement with previous reports. In addition, the NaCl-type, Pnma, Cmcm, and CsCl-type structures of PbSe were investigated using density functional theory calculations. Based on the experiments and calculations, the intermediate phase has Pnma symmetry rather than Cmcm symmetry, as has been previously suggested. Some of the diffraction peaks of the Pnma phase were broad in the high-pressure experiments, but were determined to be single diffraction peaks rather than the overlap of multiple peaks by different experimental methods. The Pnma and Cmcm structures of PbSe were compared. It was found that two structures were very similar, and it was difficult to distinguish one power diffraction pattern from the other.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High quality single shot ultrafast MeV electron diffraction from a photocathode radio-frequency gun

A compact ultrafast electron diffractometer, consisting of an s-band 1.6 cell photocathode radio-frequency gun, a multi-function changeable sample chamber, and a sensitive relativistic electron detector, was built at Shanghai Jiao Tong University. High-quality single-shot transmission electron diffraction patterns have been recorded by scattering 2.5 MeV electrons off single crystalline gold and polycrystalline aluminum samples. The high quality diffraction pattern indicates an excellent spatial resolution, with the ratio of the diffraction ring radius over the ring rms width beyond 10. The electron pulse width is estimated to be about 300 fs. The high temporal and spatial resolution may open new opportunities in various areas of sciences.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si{sub 1−x}Ge{sub x}, and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approximately 40 nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approximately 10{sup 4}–10{sup 5 }cm{sup −2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Synthesis, characterization, and gas-sensing properties of monodispersed SnO{sub 2} nanocubes

Monodispersed single-crystalline SnO{sub 2} nanocubes with exposed a large percentage of high-energy surfaces have been synthesized by a simple solvothermal process at low temperature without any templates and catalysts. The as-prepared samples have been characterized by X-ray diffraction and transmission electron microscopy. Many outstanding characters of the final products have been shown, such as uniform particle size, high purity, and monodispersity. In property, superior gas-sensing properties such as high response, rapid response-recovery time, and good selectivity have also been shown to ethanol at an optimal working temperature of as low as 280 °C. It indicates that the as-prepared SnO{sub 2} nanocubes are promising for gas sensors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Fast atom diffraction from a β-Ga{sub 2}O{sub 3}(100) surface

Fast H, He atoms, and H{sub 2} molecules with projectile energies ranging from 200 eV up to 3 keV were scattered under a grazing angle of incidence from a clean and flat β-Ga{sub 2}O{sub 3}(100) surface. The bulk single crystal was grown by the Czochralski method and prepared via annealing under ultra-high vacuum conditions. For scattering along low-index directions, we observed defined diffraction patterns in the angular distributions for scattered projectiles. From the analysis of diffraction patterns, we derive the surface unit cell in good accord with the parameters b and c for the lattice of the bulk crystal and derive information on the termination of the surface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition

By implanting Zn{sup +} ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zn{sub i}) and O vacancies (V{sub O}) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low “kick out” thermal energy and small thermal quenching energy. A “self-activated” optical transition between a shallow donor and the defect center of Zn{sub i}-V{sub O} complex or V{sub Zn}V{sub O} di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Near-field resonance shifts of ferroelectric barium titanate domains upon low-temperature phase transition

Scattering scanning near-field optical microscopy (s-SNOM) has been established as an excellent tool to probe domains in ferroelectric crystals at room temperature. Here, we apply the s-SNOM possibilities to quantify low-temperature phase transitions in barium titanate single crystals by both temperature-dependent resonance spectroscopy and domain distribution imaging. The orthorhombic-to-tetragonal structural phase transition at 263 K manifests in a change of the spatial arrangement of ferroelectric domains as probed with a tunable free-electron laser. More intriguingly, the domain distribution unravels non-favored domain configurations upon sample recovery to room temperature as explainable by increased sample disorder. Ferroelectric domains and topographic influences are clearly deconvolved even at low temperatures, since complementing our s-SNOM nano-spectroscopy with piezoresponse force microscopy and topographic imaging using one and the same atomic force microscope and tip.

36 MATERIALS SCIENCE↗

Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

36 MATERIALS SCIENCE↗

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of ∼350 K and power dissipation of ∼9 W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

36 MATERIALS SCIENCE↗

The interaction of 193 nm excimer laser radiation with single-crystal zinc oxide: Generation of long lived highly excited particles with evidence of Zn Rydberg formation

In past studies, we have observed copious emissions of ionic and atomic Zn from single-crystal ZnO accompanying irradiation of single-crystal ZnO with 193-nm excimer laser irradiation at fluences below the onset of optical breakdown. The Zn{sup +} and ground state Zn° are studied using time-of-flight techniques and are mass selected using a quadrupole mass spectrometer. Simultaneously, we have observed emitted particles that are detectable with a Channeltron electron multiplier but cannot be mass selected. It is a reasonable hypothesis that these particles correspond to a neutral atom or molecule in highly excited long lived states. We provide strong evidence that they correspond to high lying Rydberg states of atomic Zn. We propose a production mechanism involving laser excitation via a two photon resonance excitation of Zn°.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Thermal conductivity changes upon neutron transmutation of {sup 10}B doped diamond

{sup 10}B doped p-type diamond samples were subjected to neutron transmutation reaction using thermal neutron flux of 0.9 × 10{sup 13} cm{sup −2} s{sup −1} and fast neutron flux of 0.09 × 10{sup 13} cm{sup −2} s{sup −1}. Another sample of epilayer grown on type IIa (110) single crystal diamond substrate was subjected to equal thermal and fast neutron flux of 10{sup 14} cm{sup −2} s{sup −1}. The defects in the diamond samples were previously characterized by different methods. In the present work, thermal conductivity of these diamond samples was determined at room temperature by transient thermoreflectance method. The thermal conductivity change in the samples as a function of neutron fluence is explained by the phonon scattering from the point defects and disordered regions. The thermal conductivity of the diamond samples decreased more rapidly initially and less rapidly for larger neutron fluence. In addition, the thermal conductivity in type IIb diamond decreased less rapidly with thermal neutron fluence compared to the decrease in type IIa diamond subjected to fast neutron fluence. It is concluded that the rate of production of defects during transmutation reaction is slower when thermal neutrons are used. The thermal conductivity of epilayer of diamond subjected to high thermal and fast neutron fluence is associated with the covalent carbon network in the composite structure consisting of disordered carbon and sp{sup 2} bonded nanocrystalline regions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Epitaxial growth of large area single-crystalline few-layer MoS{sub 2} with high space charge mobility of 192 cm{sup 2} V{sup −1} s{sup −1}

We report on the vapor-solid growth of single crystalline few-layer MoS{sub 2} films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ∼2 × 10{sup 11 }cm{sup −2} and a room temperature mobility of 192 cm{sup 2}/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ∼1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential, and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS{sub 2} films with excellent uniformity and high quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit.

36 MATERIALS SCIENCE↗

Electrical, magnetic, and magneto-electrical properties in quasi-two-dimensional K{sub 0.58}RhO{sub 2} single crystals doped with rare-earth elements

In this Letter, we studied the electrical transport, magnetic property, magnetoresistance and anomalous Hall properties of La-, Sm-, Ho-, and Dy-doped quasi-two dimensional K{sub 0.58}RhO{sub 2} single crystals. At low temperature (<10 K), a significant magnetoresistance (36%) can be observed in these samples. Accordingly, the “glassy ferromagnetism” is revealed by temperature-dependent magnetization in these samples. The significant magnetoresistance is related to the granular ferromagnetism. The unconventional anomalous Hall effect is also observed in magnetic atoms doped samples. Our finding shields more light on the magnetic, magnetoresistance, and anomalous Hall properties of quasi-two-dimensional material systems doped with magnetic ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structurally inhomogeneous nanoparticulate catalysts in cobalt-catalyzed carbon nanotube growth

The structure of nanoparticulate catalysts involved in cobalt-catalyzed chemical vapor deposition growth of carbon nanotubes (CNTs) was investigated by in situ environmental transmission electron microscopy (ETEM). In contrast to previous studies, the analyses of ETEM images showed that the nanoparticulate catalysts were structurally inhomogeneous during CNT growth in the source gas of acetylene at a rate of pressure increase of about 3 Pa/h and at 550 °C. The lattice fringes observed in the nanoparticulate catalysts can be accounted for by not a single crystalline structure but by several possible pairs of structures including pure Co and cobalt carbides. The inhomogeneous structures were unstable with time. The possible origin of the inhomogeneous structures is discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Phonon thermal transport through tilt grain boundaries in strontium titanate

In this work, we perform nonequilibrium molecular dynamics simulations to study phonon scattering at two tilt grain boundaries (GBs) in SrTiO{sub 3}. Mode-wise energy transmission coefficients are obtained based on phonon wave-packet dynamics simulations. The Kapitza conductance is then quantified using a lattice dynamics approach. The obtained results of the Kapitza conductance of both GBs compare well with those obtained by the direct method, except for the temperature dependence. Contrary to common belief, the results of this work show that the optical modes in SrTiO{sub 3} contribute significantly to phonon thermal transport, accounting for over 50% of the Kapitza conductance. To understand the effect of the GB structural disorder on phonon transport, we compare the local phonon density of states of the atoms in the GB region with that in the single crystalline grain region. Our results show that the excess vibrational modes introduced by the structural disorder do not have a significant effect on phonon scattering at the GBs, but the absence of certain modes in the GB region appears to be responsible for phonon reflections at GBs. This work has also demonstrated phonon mode conversion and simultaneous generation of new modes. Some of the new modes have the same frequency as the initial wave packet, while some have the same wave vector but lower frequencies.

36 MATERIALS SCIENCE↗

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

36 MATERIALS SCIENCE↗