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Results for “defect microscopy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Reversible oxygen intercalation in hexagonal Y 0.7 Tb 0.3 MnO 3+δ : toward oxygen production by temperature-swing absorption in air

The oxygen storage capacity, structure and thermodynamic stability were studied for hexagonal Y 0.7 Tb 0.3 MnO 3+δ in oxygen and air to assess its applicability for oxygen separation from air by a temperature-swing adsorption process. We show that large amounts of oxygen excess can be reversibly incorporated into and extracted from small particle-size samples of Y 0.7 Tb 0.3 MnO 3+δ prepared by sol–gel synthesis for fixed oxygen partial pressures. The hyperstoichiometric material, with δ ≥ 0.45 prepared in oxygen or high-pressure oxygen atmospheres, assumes a new hexagonal structure with interstitial oxygen defects near the nominally five coordinated Mn site as determined by neutron diffraction and supported by scanning and transmission electron microscopy. Thermogravimetric measurements demonstrate reversible intercalation of oxygen in a pure O 2 atmosphere at around 300 °C, but more importantly, also in air over a remarkably narrow temperature range of ~20 °C, albeit producing smaller oxygen amounts δ ≤ 0.25. Comparison of samples' properties obtained by the sol–gel and solid-state synthesis methods confirms enhanced oxygen storage capacity and oxygen exchange kinetics for the small particle-size samples which exhibit larger specific surface areas. Sequential temperature-swing absorption and long-term annealing experiments demonstrate the high practical potential of Y 0.7 Tb 0.3 MnO 3 compounds for the industrial production of oxygen enriched gases by utilization of waste heat at 250–350 °C.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electron-ion plasma modification of Al-based alloys

The paper reports on the study where we analyzed the surface structure and strength properties of coated Al alloys modified by electron-ion plasma treatment. The Al alloys were deposited with a thin (≈0.5 μm) TiCu film coating (TiCu-Al system) and with a hard TiCuN coating (TiCuN–AlSi system) on a TRIO vacuum setup in the plasma of low-pressure arc discharges. The temperature fields and phase transformations in the film–substrate system were estimated by numerical simulation in a wide range of electron energy densities (5–30 J/cm{sup 2}) and pulse durations (50–200 μs). The calculations allowed us to determine the threshold energy density and pulse duration at which the surface structure of the irradiated Al-based systems is transformed in a single-phase state (solid or liquid) and in a two-phase state (solid plus liquid). The elemental composition, defect structure, phase state, and lattice state in the modified surface layers were examined by optical, scanning, and transmission electron microscopy, and by X-ray diffraction analysis. The mechanical characteristics of the modified layers were studied by measuring the hardness and Young’s modulus. The tribological properties of the modified layers were analyzed by measuring the wear resistance and friction coefficient. It is shown that melting and subsequent high-rate crystallization of the TiCu–Al system makes possible a multiphase Al-based surface structure with the following characteristics: crystallite size ranging within micrometer, microhardness of more than 3 times that in the specimen bulk, and wear resistance ≈1.8 times higher compared to the initial material. Electron beam irradiation of the TiCuN–AlSi system allows fusion of the coating into the substrate, thus increasing the wear resistance of the material ≈2.2 times at a surface hardness of ∼14 GPa.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis micro-scale boron nitride nanotubes at low substrate temperature

High temperature synthesis methods produce defects in 1D nanomaterials, which ultimately limit their applications. We report here the synthesis of micro-scale boron nitride nanotubes (BNNT) at low substrate temperature (300 {sup o}C) using a pulsed CO{sub 2} laser deposition technique in the presence of catalyst. The electron microscopic analyses have shown the nanotubes distributed randomly on the surface of the substrate. The average diameter (∼0.25 μm) of a nanotube, which is the highest reported value to date, is estimated by SEM data and confirmed by TEM measurements. These nanotubes are promising for high response deep-UV photo-luminescent devices. A detailed synthesis mechanism is presented and correlated with the experimental results.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Dynamic behavior of CH 3 NH 3 PbI 3 perovskite twin domains

We report the recent discovery of twin domains in MAPbI 3 perovskites has initiated contentious discussion on the ferroic nature of hybrid perovskites. Ferroelectric polarization is thought to facilitate the dissociation of photoinduced electron-hole pairs, helping to explain the extraordinary photovoltaic performance exhibited by this class of materials. Alternate to ferroelectricity, which has yet to be unambiguously established despite considerable efforts to do so, ferroelasticity was also proposed in these materials. Meanwhile, given the coupling of ionic states and ferroelectricity and the interconnected nature of defect chemistry and ferroelasticity, the electrochemical reactivity can no longer be ignored. In this work, using band excitation piezoresponse force microscopy, we reveal the variation in elasticity between adjacent domains, indicating the ferroelasticity and the difference in the crystallographic states of the twin domain. Moreover, using band excitation contact Kelvin probe force microscopy, we dynamically map the evolution of the twinning structure under electric bias. These results help decipher the effect of the twin domains on ionic mobility and ion diffusion pathways. Combining these results, we reveal the interaction of twin domains and ionic activity in this material. Furthermore, this work provides insights into the twinning structure in MAPbI 3 and its potential effects on the hybrid perovskite optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Long Range Ferromagnetic Order in LaCoO 3-δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering

We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering can stabilize a long-range ferromagnetic ground state in epitaxial LaCoO 3 thin films. Highest saturation magnetization values are found in the thin films in tension on SrTiO 3 and (La,Sr)(Al,Ta)O 3 substrates and the lowest values are found in thin films in compression on LaAlO 3 . Electron microscopy reveals oxygen vacancy ordering to varying degrees in all samples, although samples with the highest magnetization are the most defective. Element-specific x-ray absorption techniques reveal the presence of high spin Co 2+ and Co 3+ as well as low spin Co 3+ in different proportions depending on the strain state. The interactions among the high spin Co ions and the oxygen vacancy superstructure are correlated with the stabilization of the long-range ferromagnetic order.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Nonuniform carrier density in Cd 3 As 2 evidenced by optical spectroscopy

In this paper, we report the detailed optical properties of Cd 3 As 2 crystals in a wide parameter space: temperature, magnetic field, carrier concentration, and crystal orientation. We investigate high-quality crystals synthesized by three different techniques. In all the studied samples, independently of how they were prepared and how they were treated before the optical experiments, our data indicate conspicuous fluctuations in the carrier density (up to 30%). These charge puddles have a characteristic scale of 100 μm, they become more pronounced at low temperatures, and possibly, they become enhanced by the presence of crystal twinning. The Drude response is characterized by very small scattering rates (~1 meV) for as-grown samples. Mechanical treatment, such as cutting or polishing, influences the optical properties of single crystals, by increasing the Drude scattering rate and also modifying the high-frequency optical response. Finally, magnetoreflectivity and Kerr rotation are consistent with electronlike charge carriers and a spatially nonuniform carrier density.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Gigahertz Dielectric Polarization of Substitutional Single Niobium Atoms in Defective Graphitic Layers

In this work, we synthesize two Nb/C composites with an order of magnitude difference in the density of single niobium atoms substituted into defective graphitic layers. The concentration and sites of single Nb atoms are identified using aberration-corrected scanning transmission electron microscopy and density functional theory. Comparing the experimental complex permittivity spectra reveals that a representative dielectric resonance at ~16 GHz originates from the intrinsic polarization of single Nb atom sites, which is confirmed by theoretical simulations. The single-atom dielectric resonance represents the physical limit of the electromagnetic response of condensed matter, and thus might open up a new avenue for designing electromagnetic wave absorption materials. Single-atom resonance also has important implications in understanding the correlation between the macroscopic dielectric behaviors and the atomic-scale structural origin.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Preparation and Characterization of Mn Doped ZnO Nanorods

Mn doped ZnO nanorods were prepared by chemical precipitation method. The micro-structural and structural properties of the nanorods were calculated from the X-ray diffraction technique. The formed nanorods was seen in the scanning electron microscopy. The purity of the sample was confirmed by the energy dispersive X-ray analysis (EDX). The optical properties were studied using UV-Vis spectroscopy and photoluminescence. In the photoluminescence spectrum, the peaks due to recombination of free electrons, oxygen vacancy and intrinsic defects were observed. The magnetic properties were studied using vibrating sample magnetometer (VSM) and the paramagnetic nature of the material was confirmed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Continuous MOF Membrane-Based Sensors via Functionalization of Interdigitated Electrodes

Three M-MOF-74 (M = Co, Mg, Ni) metal-organic framework (MOF) thin film membranes have been synthesized through a sensor functionalization method for the direct electrical detection of NO 2 . The two-step surface functionalization procedure on the glass/Pt interdigitated electrodes resulted in a terminal carboxylate group, with both steps confirmed through infrared spectroscopic analysis. This surface functionalization allowed the MOF materials to grow largely in a uniform manner over the surface of the electrode forming a thin film membrane over the Pt sensing electrodes. The growth of each membrane was confirmed through scanning electron microscopy (SEM) and X-ray diffraction analysis. The Ni and Mg MOFs grew as a continuous but non-defect free membrane with overlapping polycrystallites across the glass surface, whereas the Co-MOF-74 grew discontinuously. To demonstrate the use of these MOF membranes as an NO 2 gas sensor, Ni-MOF-74 was chosen as it was consistently fabricated as the best thin and homogenous membrane, as confirmed by SEM. The membrane was exposed to 5 ppm NO 2 and the impedance magnitude was observed to decrease 123× in 4 h, with a larger change in impedance and a faster response than the bulk material. Importantly, the use of these membranes as a sensor for NO 2 does not require them to be defect-free, but solely continuous and overlapping growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Quantification and characterisation of porosity in selectively laser melted Al–Si10–Mg using X-ray computed tomography

We used X-ray computed tomography (CT), microscopy and hardness measurements to study Al–Si10–Mg produced by selective laser melting (SLM). Specimens were subject to a series of heat treatments including annealing and precipitation hardening. The specimen interiors were imaged with X-ray CT, allowing the non-destructive quantification and characterisation of pores, including their spatial distribution. The specimens had porosities less than 0.1%, but included some pores with effective cross-sectional diameters up to 260 μm. The largest pores were highly anisotropic, being flat and lying in the plane normal to the build direction. Annealing cycles caused significant coarsening of the microstructure and a reduction of the hardness from (114 ± 3) HV, in the as-built state, to (45 ± 1) HV, while precipitation hardening increased this to a final hardness of (59 ± 1) HV. The pore size and shape distributions were unaffected by the heat treatments. We demonstrate the applicability of CT measurements and quantitative defect analysis for the purposes of SLM process monitoring and refinement. - Highlights: • We examined SLM Al–Si10–Mg with X-ray CT, microscopy and hardness measurements. • The size, shape and position distributions of the internal pores were determined. • Heat treatments alter the microstructure and hardness, but the pores are unaffected. • The largest pores are highly anisotropic, being at or disc-like in the xy plane. • CT and statistical analysis can play a role in improving the manufacturing process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe

For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU 2 Te phase and Cu Cd may be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.

CdTe↗
DOE OSTI2014

1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Characterization of fluorite-structured ferroelectrics using transmission electron microscopy: Techniques, challenges, and recent advances

Fluorite-structured ferroelectrics, such as hafnium oxide and its alloyed variants, are key candidates for next-generation memory devices. Yet, fundamental questions about switching mechanisms, domain dynamics, and phase evolution remain open. Transmission electron microscopy (TEM) provides unique capabilities to address these challenges by simultaneously resolving the positions of anions and cations, chemical variations, and structural transformations. Recent advances—including in situ heating, electron beam-induced switching, electron energy loss spectroscopy, and differential phase contrast imaging—have revealed critical insights into phase transitions, potential switching pathways, and oxygen vacancy behavior. However, experimental barriers such as TEM sample-preparation-induced artifacts, high coercive fields, and imaging constraints persist, especially for polycrystalline films. By offering a focused overview of current TEM developments in fluorite ferroelectrics, this work outlines how TEM contributes to understanding key phenomena and proposes a roadmap for future studies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth and Structure of the First Layers of Ice on Ru(0001) and Pt(111)

Scanning tunneling microscopy was used to probe the structure and growth of the first few layers of water on Ru(0001) and Pt(111) at the molecular level. The surface-bound first layer is composed of a mixture of water molecules forming hexagonal structures, both in registry and out-of-registry with the substrate atoms. The hexagons are connected by pentagonal and heptagonal units. At temperatures below 140 K, this layer structure gives rise to the growth of metastable amorphous structures in the second and higher layers. We found that in the transition from amorphous to crystalline ice the structure of the original bottom layer changes to one in perfect local registry with the hexagonal surfaces of Ru(0001) and Pt(111). We further discovered structural defects in the form of extended one-dimensional lines of five- and eight-membered rings that are domain boundaries and stacking faults in the growing ice layers, which lead to the formation of metastable cubic ice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗
DOE OSTI2014

The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111)

36 MATERIALS SCIENCE↗