Search NASA⌕ Search

SEARCH · Search NASA

Results for “doping effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
NASA NTRS2024

Morphology and Luminescence Properties of Transition Metal Doped Zinc Selenide Crystals

Zinc selenide is an excellent matrix material to dope with rare-earth and transition metal to achieve mid-infrared luminescence to develop high power lasers. The luminescence, morphology and refractive index is significantly affected by the doping and defects generated due to size and valency of dopants, concentration, growth process and convection during the growth. The aim of the study is to investigate effect of point and line defects generated due to low doping of iron and chromium on the emission and morphology of the zinc selenide. Luminescence and morphological properties of large iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects associated with the doping process. The emission properties following both short wavelength (i.e., ultraviolet; 350 – 370 nm) excitation and longer wavelength (i.e., near infrared; 850 – 870 nm) excitation were characterized. Luminescence emission bands were identified in both doped crystals. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths were observed to shift. Raman studies using 266 and 532 – nm excitation revealed different positions of longitudinal and transverse peaks for Fe-ZnSe and Cr-ZnSe crystals, associated with different levels of defects due to the different ion sizes. The emission bands were found to decrease in intensity due to recombination of residual impurity co-dopants and complex defects generated during growth and fabrication. Cryogenic temperature analyses revealed a very clean emission band due to freezing of some of the point and line defects. An emission band observed at 980 nm for both crystals at room temperature as well as cryogenic temperatures indicates a vibronic peak in ZnSe. The scanning electron microscopy (SEM) images of the local morphology support the conclusion that small crystallites in doped crystals are also present.

Zinc selenide↗
DOE OSTI2021

Influence of Charge Fraction on the Phase Behavior of Symmetric Single-Ion Conducting Diblock Copolymers

A series of symmetric poly[(oligo(ethylene glycol) methyl ether methacrylate-co-oligo(ethylene glycol) propyl sodium sulfonate methacrylate)]-block-polystyrene (PsOEGMA-PS) diblock copolymers were synthesized as a model system to probe the effect of charge fraction on the phase behavior of charged-neutral single-ion conducting diblock copolymers. Small-angle X-ray scattering (SAXS) experiments showed that increasing the charge fraction does not alter the ordered phase morphology (lamellar) but increases the order–disorder transition temperature (T ODT ) significantly. Additionally, the effective Flory–Huggins interaction parameter (χ eff ) was found to increase linearly with the charge fraction, similar to the case of conventional salt-doped diblock copolymers. This indicates that the effect of counterion solvation, attributed to the significant mismatch between the dielectric constant of each block, provides the dominant effect in tuning the phase behavior of this charged diblock copolymer. Lastly, we therefore infer that electrostatic cohesion (local charge ordering induced by Coulombic interactions), which is predicted to suppress microphase separation and lead to asymmetric phase diagrams, only plays a minor role in this model system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗
DOE OSTI2021

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe 2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p + -MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe 2 . Back-gated WSe 2 FETs with p + -MoS 2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10 8 , and a high two-terminal field-effect mobility up to ~200 cm2 V –1 s –1 at room temperature. Our theoretical modeling reveals that the p + -MoS 2 /WSe 2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p + -MoS 2 side and a substantial accumulation layer of free holes on the WSe 2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe 2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p + -MoS 2 being larger than the ionization energy of WSe 2 . This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Shifting Defect Self-Regulation via Disordered Vacancies in Hollow Tin Perovskites

Tin(II)-based hybrid halide perovskites typically suffer from severe self-doping behavior as a result of facile oxidation of Sn(II) to Sn(IV), leading to high carrier densities (holes) and metallic-like conductivities that limit their applications. In this contribution, we describe how substituting the large ethylenediammonium cation for methylammonium in the intentionally defective “hollow” perovskite family, MA 1−x en x Sn 1−0.7x I 3−0.4x (MA = methylammonium, en = ethylenediammonium), where 0 ≤ x ≤ 0.38, effectively minimizes the intrinsic self-doping behavior. The use of a solvent-free, mechanochemical synthesis route further circumvents oxidative side reactions typical in solution processing, enabling more precise control and understanding of both composition and defect chemistry. Dark and time-resolved microwave conductivity measurements of these materials as a function of “x” reveal two regimes of conductivity suppression: at low x incorporation (x ≤ 0.15), the carrier density decreases by an order of magnitude via defect-mediated charge compensation, while higher substitution (0.15 < x ≤ 0.38) greatly reduces the carrier mobility. At these lower substitution levels, the observations suggest that intrinsic equilibrium tin vacancies are compensated instead by ionic defects in lieu of mobile holes. For the higher substitution levels, the less mobile carriers exhibit long recombination lifetimes, consistent with polaron-mediated transport. These findings establish a strategy for relatively low iodine chemical potential synthesis and defect-driven control of the carrier concentration in tin halide perovskites, advancing the rational discovery of dopable hybrid semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Optimization of BaHfO{sub 3} Doping Concentration as Secondary Phase in Y{sub 0.5}Gd{sub 0.5}Ba{sub 2}Cu{sub 3}O{sub 7−x} Thin Film Prepared by Pulsed Laser Deposition

BaHfO{sub 3} (BHO)-doped Y{sub 0.5}Gd{sub 0.5}Ba{sub 2}Cu{sub 3}O{sub 7−x} (YGBCO) films with a series of doping concentrations (1, 3, 5, and 10 mol%) were fabricated on CeO{sub 2} buffer layers by pulsed laser deposition (PLD) technique, and a pristine YGBCO film was also deposited at the same conditions for comparison. X-ray diffraction (XRD) results showed that the undoped and doped YGBCO films had a pure c-axis orientation. While the surface morphology and crystal quality of the BHO-doped YGBCO films deteriorated as the BHO content increased, and the critical current density (J{sub c}) at 77 K and self-field (J{sub c}{sup 77,0}) and critical transition temperature (T{sub c}) of the BHO-doped YGBCO films exhibited varying degrees of decline in comparison with the pristine YGBCO film. However, the 5 mol% BHO-doped YGBCO film exhibited greatly enhanced the J{sub c} and the highest pinning force densities (F{sub p}) at both 4.2 and 65 K, which showed the maximum value of 5776 GN/m{sup 3} (4.2 K, H//c) and 117 GN/m{sup 3} (65 K, H//c), about 1.5 times that of the undoped YGBCO film. Based on the results, the 5 mol% BHO-doped YGBCO film had the most effective flux pinning centers, which are responsible for strongly improved critical current densities in magnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Spectral, Electrical, Thermoelectrical and Dielectric Properties of (Zn,Zr) Co-doped CuFe{sub 2}O{sub 4}

The effects of Zr{sup + 4} and Zn{sup + 2} substitution on the electrical, dielectric and spectral properties of non-stoichiometric Cu{sub 1−x}Zn{sub x}Zr{sub y}Fe{sub 2−y}O{sub 4+} {sub δ} and stoichiometric Cu{sub 1−x}Zn{sub x+} {sub y}Zr{sub y}Fe{sub 2−2y}O{sub 4} ferrites prepared by double sintering ceramic technique have been investigated. IR absorption spectra confirm the formion of spinel structure. On the other hand, IR spectra can give an idea about the change of molecular structure of ferrites system due to the perturbation that occurred in Fe{sup 3+}–O{sup 2−} bond by introducing Zn and Zr elements. The phase identification of nonstoichiometric (ns) and stoichiometric (s) samples was confirmed by the presence of endothermic peak from DTA curves at around 936 {sup ∘}C in agreement with X-ray diffraction and IR results. The calculated low values of activation energies for conduction are in the range that suggests the conduction is due to thermally activated mobility and the presence of hopping conduction mechanism. Thermoelectric power exhibits positive sign for most s and ns samples. The concentration of charge carrier is constant in the ferromagnetic region. It is also noted that the dielectric constant decreases with increasing Zn and Zr contents. From the above discussion the samples containing Zn and Zr elements have lower ΔB{sub pp} values with low energy loss. From the ESR analysis it can be confirmed that the addition of Zn and Zr generally decrease the power loss which is very important in the application for the manufacturing of a material which is used as a core of transformer at the microwave frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Degenerate doping in B-Ga 2 O 3 Single Crystals through Hf-doping

n-type conductivity of β-Ga 2 O 3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga 2 O 3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O 2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga 2 O 3 with a measured electron concentration ~2 × 10 19 cm -3 , mobility 80–65 cm 2 V -1 s -1 , and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 10 19 atoms cm -3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 10 19 cm -3 ).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Decoupling of Nitrogen and Oxygen Impurities in Nitrogen Doped SRF Cavities

The performance of superconducting radiofrequency (SRF) cavities is critical to enabling the next generation of efficient high-energy particle accelerators. Recent developments have focused on altering the surface impurity profile through \textit{in-situ} baking, furnace baking, and doping to introduce and diffuse beneficial impurities such as nitrogen, oxygen, and carbon. However, the precise role and properties of each impurity are not well understood. In this work, we attempt to disentangle the role of nitrogen and oxygen impurities through time-of-flight secondary ion mass spectrometry of niobium samples baked at temperatures varying from 75-800 $^\circ$C with and without nitrogen injection. From these results, we developed treatments recipe that decouple the effects of oxygen and nitrogen in doping treatments. Understanding how these impurities and their underlying mechanisms drive further optimization in the tailoring of impurity profiles for high-performance SRF cavities.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Boosting CO 2 Electrochemical Reduction with Atomically Precise Surface Modification on Gold Nanoclusters

Thiolate-protected gold nanoclusters (NCs) are promising catalytic materials for the electrochemical CO 2 reduction reaction (CO 2 RR). In this work an atomic level modification of a Au 23 NC is made by substituting two surface Au atoms with two Cd atoms, and it enhances the CO 2 RR selectivity to 90–95 % at the applied potential between -0.5 to -0.9 V, which is doubled compared to that of the undoped Au 23 . Additionally, the Cd-doped Au 19 Cd 2 exhibits the highest CO 2 RR activity (2200 mA mg -1 at -1.0 V vs. RHE) among the reported NCs. This synergetic effect between Au and Cd is remarkable. Density-functional theory calculations reveal that the exposure of a sulfur active site upon partial ligand removal provides an energetically feasible CO 2 RR pathway. The thermodynamic energy barrier for CO formation is 0.74 eV lower on Au 19 Cd 2 than on Au 23 . Here these results reveal that Cd doping can boost the CO 2 RR performance of Au NCs by modifying the surface geometry and electronic structure, which further changes the intermediate binding energy. This work offers insights into the surface doping mechanism of the CO 2 RR and bimetallic synergism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1999

Flight Experiment to Study Double-Diffusive Instabilities in Silver-Doped Lead Bromide Crystals

A detailed study on the effect of convection on crystal quality was carried out by growing lead bromide crystals in transparent Bridgman furnace. Direct observations were made on the solid-liquid interface and a new kind of instability was observed. This could be explained on the basis of toroidal flow in the AgBr-doped lead bromide sample. With the increasing translation velocity, the interface changed from flat to depressed, and then formed a cavity in the center of the growth tube. The crystal grown at the lowest thermal Rayleigh number showed the highest quality and crystal grown at the largest thermal Rayleigh number showed the worst quality. Numerical studies were carried out to provide a framework for interpreting the observed convective and morphological instabilities, and to determine the critical (limiting) concentration of dopant for a particular growth velocity and gravity level. Theoretical instability diagrams were compared with data obtained from the experimental studies. These studies provided basic data on convective behavior in doped lead bromide crystals grown by the commercially important Bridgman process.

Singh, N. B.↗
DOE OSTI2025

Experimental confirmation of first-principles thermal conductivity in Zirconium-doped ThO 2

The degradation of thermal conductivity in advanced nuclear fuels due to the accumulation of fission products and irradiation-induced defects is inevitable, and must be considered as part of safety and efficiency analyses of nuclear reactors. Here, this study examines the thermal conductivity of a zirconium-doped ThO 2 crystal, synthesized via the hydrothermal method using a spatial domain thermoreflectance technique. Zirconium is one of the soluble fission products in oxide fuels that can effectively scatter heat-carrying phonons in the crystalline lattice of fuel. Thus, thermal property measurements of zirconium-doped ThO 2 single crystals provide insights into the effects of substitutional zirconium doping, isolated from extrinsic factors such as grain boundary scattering. The experimental results are compared with first-principles calculations of the lattice thermal conductivity of ThO 2 , employing an iterative solution of the Peierls-Boltzmann transport equation. Additionally, the non-perturbative Green's function methodology is utilized to compute phonon-point defect scattering rates, accounting for local distortions around point defects, including mass difference changes, interatomic force constants, and structural relaxation. The congruence between the predicted results from first-principles calculations and the measured temperature-dependent thermal conductivity validates the computational methodology. Furthermore, the methodologies employed in this study enable systematic investigations of thermal conductivity reduction by fission products, potentially leading to the development of more accurate fuel performance codes.

36 - MATERIALS SCIENCE↗
DOE OSTI2018

Microwave-Assisted Combustion Synthesis of ZnO:Eu Nanoparticles: Effect of Fuel Types

Nanoparticles of Europium oxide doped with Zinc oxide were synthesized via microwave-assisted combustion method. Citric acid as a simultaneous fuel and chelating agent and glycine as a fuel and mixture of these fuels were sleeted. X-Ray diffraction patterns (XRD) indicated the formation of ZnO structure with a few amount of Eu{sub 2}O{sub 3} phase. Fourier transformation infra red (FTIR) spectra reveal the increase of ZnO{sub 4} bonds with glycine content of fuels mixture. Scanning electron microscope (SEM) images showed the conversion of nanosphere to spongy-like structure with respect to change of fuel mixtures from citric to glycine. From transmission electron microscopy (TEM) nanoparticles of a mean size 30 nm are observed Green fluorescence emission of different samples was due to activation of self activated center of ZnO structure through transition of electron from Eu{sup 3+} to V{sub zn} sites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO{sub 2} and Nb{sub 2}O{sub 5} co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb{sub 2}O{sub 5} co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO{sub 2} co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce{sup 4+} co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce{sup 4+} in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce{sup 4+} co-doped YSZ are much closer to each other than that of the Nb{sup 5+} co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Acid-Washing on the Nature of Bulk Characteristics of Nitrogen-Doped Carbon Nanostructures as Oxygen Reduction Reaction Electrocatalysts in Acidic Media

In this work, CN x catalysts were synthesized using Fe-doped MgO as a growth substrate. The oxygen reduction reaction (ORR) performance of the synthesized samples was evaluated in a half-cell. Acid-washing improved the ORR activity for the synthesized CN x samples. This is attributed to the removal of the exposed metal, which is likely to be blocking the active sites. Characterization experiments suggest that acid-washing totally eliminates the support material (MgO) and renders carbon more graphitic. This is likely to be due to elimination of amorphous or less crystalline species during washing. In addition, characterization experiments reveal significant differences in the metallic species that are exposed versus those encased in the carbon nanostructure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗