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At least 1,027 records · Page 57

A Personal Journey in Nanoscience via Developing and Applying Liquid Phase TEM

Liquid phase TEM has attracted widespread attention in recent years as a groundbreaking tool to address various fundamental problems in nanoscience. It has provided the opportunity to reveal many unseen dynamic phenomena of nanoscale materials in solution processes by direct imaging through liquids with high spatial and temporal resolution. After my earlier work on real-time imaging of the nucleation, growth, and dynamic motion of nanoparticles in liquids by developing high-resolution liquid phase transmission electron microscopy (TEM) down to the sub-nanometer level, I established my own research group at Lawrence Berkeley National Lab in 2010. My group focuses on developing and applying liquid phase TEM to investigate complex systems and reactions. We have studied a set of scientific problems centered on understanding how atomic level heterogeneity and fluctuations at solid-liquid interfaces impact nanoscale materials transformations using advanced liquid phase TEM. This article describes my personal journey in nanoscience, highlighting the main discoveries of my research group using liquid phase TEM as a unique tool. Some perspectives on the impacts of liquid phase TEM and the future opportunities in nanoscience and nanotechnology enabled by liquid phase TEM are also included.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exploring the Outer Heliosphere Through ENA Observations from IMAP

The Interstellar Mapping and Acceleration Probe (IMAP) mission is poised to revolutionize our understanding of two of the most central issues in heliophysics today: the nature of the interaction of the solar wind with the local interstellar medium (LISM), and the acceleration of energetic particles throughout the heliosphere. Here we focus on the anticipated contributions to this endeavor by measurement of hydrogen energetic neutral atoms (ENAs) that emanate from the solar wind–LISM interface region. ENA imaging allows us to remotely sense the structure and plasma characteristics of the heliosheath and the LISM just beyond the heliopause, and how these regions evolve in response to solar activity. These instruments, IMAP-Lo, IMAP-Hi, and IMAP-Ultra, cover energies from 10 eV to 300 keV with unprecedented angular resolution, energy resolution, and detection sensitivity. In this paper, we present the IMAP mission science specific to the study of the heliosphere/LISM interaction. We review what we have learned about the heliosphere interaction based on prior observations and theoretical studies. We then present the outstanding science questions that have consequently arisen and how IMAP plans to resolve them.

79 ASTRONOMY AND ASTROPHYSICS↗

Role of Pairwise Reactions on the Synthesis of Li 0.3 La 0.57 TiO 3 and the Resulting Structure–Property Correlations

The performance of single-ion conductors is highly sensitive to the material’s defect chemistry. Tuning these defects is limited for solid-state reactions as they occur at particle–particle interfaces, which provide a complex evolving energy landscape for atomic rearrangement and product formation. In this report, we investigate the (1) order of addition and (2) lithium precursor decomposition temperature and their effect on the synthesis and grain boundary conductivity of the perovskite lithium lanthanum titanium oxide (LLTO). We use an intimately mixed sol–gel, a solid-state reaction of Li precursor + La 2 O 3 + TiO 2 , and Li precursor + amorphous La 0.57 TiO x as different chemical routes to change the way in which the elements are brought together. The results show that the perovskite can accommodate a wide range of Li deficiencies (upward of 50%) while maintaining the tetragonal LLTO structure, indicating that X-ray diffraction (XRD) is insufficient to fully characterize the chemical nature of the product (i.e., Li-deficient LLTO may behave differently than stoichiometric LLTO). Variations in the relative intensities of different reflections in XRD suggest variations in the La ordering within the crystal structure between synthesis methods. Furthermore, the choice of the precursor and the order of addition of the reactants lower the time required to form a pure phase. Density functional theory calculations of the formation energy of possible reaction intermediates support the hypothesis that a greater thermodynamic driving force to form LLTO leads to a greater LLTO yield. Here, the retention of lithium is correlated with the thermal decomposition temperature of the Li precursor and the starting material mixing strategy. Taking the results together suggests that cations that share a site with Li should be mixed early to avoid ordering. Such cation ordering inhibits Li motion, leading to higher Li ion resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exploring Cr and molten salt interfacial interactions for molten salt applications

Molten salts play an important role in various energy-related applications such as high-temperature heat transfer fluids and reaction media. However, the extreme molten salt environment causes the degradation of materials, raising safety and sustainability challenges. A fundamental understanding of material–molten salt interfacial evolution is needed. This work studies the transformation of metallic Cr in molten 50/50 mol% KCl–MgCl 2 via multi-modal in situ synchrotron X-ray nano-tomography, diffraction and spectroscopy combined with density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. Notably, in addition to the dissolution of Cr in the molten salt to form porous structures, a δ-A15 Cr phase was found to gradually form as a result of the metal–salt interaction. This phase change of Cr is associated with a change in the coordination environment of Cr at the interface. DFT and AIMD simulations provide a basis for understanding the enhanced stability of δ-A15 Cr vs. bcc Cr, by revealing their competitive phase thermodynamics at elevated temperatures and probing the interfacial behavior of the molten salt at relevant facets. This study provides critical insights into the morphological and chemical evolution of metal–molten salt interfaces. Finally, the combination of multimodal synchrotron analysis and atomic simulation also offers an opportunity to explore a broader range of systems critical to energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions

We study the effect of surface polarization on the distribution of free carriers in a wide bandgap semiconductor ferroelectric (FE) film using a thermodynamic approach. We show that free carriers, namely, holes and electrons from ionizable impurities or atomic vacancies can accumulate near the film-electrode interface, if FE polarization profile has a very steep change near the surface that is specified by the extrapolation length. Such an outcome is just the opposite of what happens in a Schottky junction in a partially or fully depleted film. This is also an entirely different effect than what has been often studied in similar structures, where the work function and screening length of the electrode metal determines the electronic character of the interface. Even for low-to-moderate densities of ionizable defects with states within the bandgap close to the band edges, high densities of carriers can localize close to the electrodes in a single domain state FE film when above a critical thickness. For very low densities of such ionizable defects, short extrapolation lengths cause electrical domain formation with minimal carrier accumulation because of the already weak depolarizing fields. This is also true for films below a critical thickness with low-to-moderate densities of ionizable impurities, i.e., electrical domains get stabilized regardless of defect density. The implications of our findings for polarization controlled Schottky to Ohmic-like transition of an interface and experimental results are discussed. It is also found that interfaces of an n-type FE heterostructure can behave like a p-type depending on the barrier heights and impurity density. We conclude that, for low-to-moderate ionizable impurity densities, it is the rate of change of polarization at the interface with position rather than solely its presence that leads to carrier accumulation and that both interfaces can become Ohmic-like with opposite signs of carriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identification and design of novel polymer-based mechanical transducers: A nano-structural model for thin film indentation

Mechanical characterization is important for understanding small-scale systems and developing devices, particularly at the interface of biology, medicine, and nanotechnology. Yet, monitoring sub-surface forces is challenging with current technologies like atomic force microscopes (AFMs) or optical tweezers due to their probe sizes and sophisticated feedback mechanisms. An alternative transducer design relying on the indentation mechanics of a compressible thin polymer would be an ideal system for more compact and versatile probes, facilitating measurements in situ or in vivo. However, application-specific tuning of a polymer's mechanical properties can be burdensome via experimental optimization. Therefore, efficient transducer design requires a fundamental understanding of how synthetic parameters such as the molecular weight and grafting density influence the bulk material properties that determine the force response. In this work, we apply molecular-level polymer scaling laws to a first order elastic foundation model, relating the conformational state of individual polymer chains to the macroscopic compression of thin film systems. A parameter sweep analysis was conducted to observe predicted model trends under various system conditions and to understand how nano-structural elements influence the material stiffness. We validate the model by comparing predicted force profiles to experimental AFM curves for a real polymer system and show that it has reasonable predictive power for initial estimates of the force response, displaying excellent agreement with experimental force curves. We also present an analysis of the force sensitivity of an example transducer system to demonstrate identification of synthetic protocols based on desired mechanical properties. These results highlight the usefulness of this simple model as an aid for the design of a new class of compact and tunable nanomechanical force transducers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

In situ study of the endotaxial growth of hexagonal CoSi{sub 2} nanoplatelets in Si(001)

This investigation aims at studying–by in situ grazing-incidence small-angle x-ray scattering–the process of growth of hexagonal CoSi{sub 2} nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO{sub 2}/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi{sub 2} nanoplatelets, all of them with their main surfaces parallel to Si(111) crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi{sub 2} nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strain dynamics during La{sub 2}O{sub 3}/Lu{sub 2}O{sub 3} superlattice and alloy formation

The dynamics of strain relaxation and intermixing during molecular beam epitaxy of La{sub 2}O{sub 3} and Lu{sub 2}O{sub 3} superlattices and alloys consisting of both binaries on Si(111) have been studied by real-time in situ grazing incidence x-ray diffraction and high resolution transmission electron microscopy. The presence of both hexagonal and cubic polymorphs of La{sub 2}O{sub 3} influences the epitaxial formation within the superlattice. The process of strain relaxation is closely related to the presence of a (La,Lu){sub 2}O{sub 3} alloy adopting a cubic symmetry. It is formed by interdiffusion of La and Lu atoms reducing internal lattice mismatch within the superlattice. An interface thickness dominated by interdiffusion regions of about 3 monolayers is determined by high-angle annular dark field scanning transmission electron microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗

Surface dependence of electronic growth of Cu(111) on MoS 2

Scanning tunneling microscopy shows that copper deposited at room temperature onto a freshly exfoliated MoS 2 surface forms Cu(111) clusters with periodic preferred heights of 5, 8, and 11 atomic layers. These height intervals correlate with Fermi nesting regions along the necks of the bulk Cu Fermi surface, indicating a connection between physical and electronic structures. Density functional theory calculations of freestanding Cu(111) films support this as well, predicting a lower density of states at the Fermi level for these preferred heights. This is consistent with other noble metals deposited on MoS 2 that exhibit electronic growth, in which the metal films self-assemble as nanostructures minimizing quantum electronic energies. Here, we have discovered that it is critical for the metal deposition to begin on a clean MoS 2 surface. If copper is deposited onto an already Cu coated surface, even if the original film displays electronic growth, the resulting Cu film lacks quantization. Instead, the preferred heights of the Cu clusters simply increase linearly with the amount of Cu deposited upon the surface. We believe this is due to different bonding conditions during the initial stages of growth. Newly deposited copper would bond strongly to the already present copper clusters, rather than the weak bonding, which exists to the van der Waals terminated surface of MoS 2 . The stronger bonding with previously deposited clusters hinders additional Cu atoms from reaching their lowest quantum energy state. The interface characteristics of the van der Waals surface enable surface engineering of self-assembled structures to achieve different applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quadratic magnetoresistance across the insulator–metal transition in V4O7 thin films

We present a comparative magnetotransport study of V4O7 thin films grown simultaneously on single-crystal Al2O3 (r-cut) and amorphous SiO2 substrates, to examine substrate-induced effects on electronic transport across the insulator–metal transition (IMT). Temperature-dependent resistivity reveals a broad electronic ordering regime below the IMT, with both films exhibiting similar transition temperatures but differing by nearly an order of magnitude in absolute resistivity. Despite this strong substrate dependence of the resistivity scale, the magnetoresistance remains predominantly quadratic in magnetic field over wide temperature intervals for both substrates. Analysis of the quadratic magnetoresistance defines an effective mobility scale that evolves systematically across the IMT and exhibits a similar temperature dependence for the two films. Structural characterization, including atomic-resolution scanning transmission electron microscopy of the V4O7/Al2O3 interface and azimuthal X-ray diffraction measurements, reveals a sharp interface and well-defined in-plane crystallographic registry for the r-cut film, in contrast to the rotationally averaged in-plane structure expected for films grown on amorphous SiO2. These results indicate that while substrate-controlled structural registry modifies the resistivity scale, the quadratic magnetotransport response across the IMT remains largely robust, providing a consistent diagnostic of electronic transport in V4O7 thin films.

25 ENERGY STORAGE↗

Using Atom-Probe Tomography to Understand Zn O : Al / Si O 2 / Si Schottky Diodes

In this work, we use electronic transport and atom-probe tomography to study ZnO:Al=SiO 2 =Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO:Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. In conclusion, this implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.

36 MATERIALS SCIENCE↗

Atom Probe Tomography of Nanoscale Electronic Materials

Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

Environmental Molecular Sciences Laboratory↗

Properties of ferrites important to their friction and wear behavior

Environmental, chemical and crystallographical effects on the fundamental nature on friction and wear of the ferrites in contact with metals, magnetic tapes and themselves are reviewed. The removal of adsorbed films from the surfaces of ferrites results in very strong interfacial adhesion and high friction in ferrite to metal and ferrite to magnetic tape contacts. The metal ferrite bond at the interface is primarily a chemical bond between the metal atoms and the large oxygen anions in the ferrite surface, and the strength of these bonds is related to the oxygen to metal bond strength in the metal oxide. The more active the metal, the higher is the coefficient of friction. Not only under adhesive conditions, but also under abrasive conditions the friction and wear properties of ferrites are related to the crystallographic orientation. With ferrite to ferrite contact the mating of highest atomic density (most closely packed) direction on matched crystallographic planes, that is, 110 directions on /110/planes, results in the lowest coefficient of friction.

Miyoshi, K.↗

Space proton transport in one dimension

An approximate evaluation procedure is derived for a second-order theory of coupled nucleon transport in one dimension. An analytical solution with a simplified interaction model is used to determine quadrature parameters to minimize truncation error. Effects of the improved method on transport solutions with the BRYNTRN data base are evaluated. Comparisons with Monte Carlo benchmarks are given. Using different shield materials, the computational procedure is used to study the physics of space protons. A transition effect occurs in tissue near the shield interface and is most important in shields of high atomic number.

NASA Discipline Number 45-10↗

High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

spectroscopy↗

Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force

The friction force between nanoparticles and a silicon wafer is a crucial parameter for cleaning processes in the semiconductor industry. However, little is known about the pH-dependency of the friction forces and the shear strength at the interface. Here, we push polystyrene nanoparticles, 100 nm in diameter, with the tip of an atomic force microscope and measure the pH-dependency of the friction, adhesion, and normal forces on a silicon substrate covered with a native silicon dioxide layer. The peak force tapping mode was applied to control the vertical force on these particles. We successively increased the applied load until the particles started to move. The main advantage of this technique over single manipulation processes is the achievement of a large number of manipulation events in short time and in a straightforward manner. Geometrical considerations of the interaction forces at the tip-particle interface allowed us to calculate the friction force and shear strength from the applied normal force depending on the pH of an aqueous solution. The results clearly demonstrated that particle removal should be performed with a basic solution at pH 9 because of the low interaction forces between particle and substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗