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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A 150-kW 99% Efficient All-Silicon-Carbide Triple-Active-Bridge Converter for Solar-Plus-Storage Systems

Solar-plus-storage systems could effectively mitigate the uncertainties of the photovoltaic (PV) generation and improve system reliability by adding an integrated battery energy storage system. As a three-port bidirectional isolated dc–dc converter with soft-switching capability, the triple-active-bridge (TAB) converter inherently matches the requirements of the solar-plus-storage system. However, challenges still remain in the TAB converter design to further improve system efficiency. In this article, the detailed design, implementation, and demonstration for a silicon carbide (SiC) 150-kW TAB converter are presented. Starting from a brief review of the TAB converter, the modulation scheme, power characteristics, and soft-switching region are analyzed. Then, the detailed design of the H-bridge converter building block is given. Here, to improve the system efficiency, a comprehensive characterization of the SiC gate driver with various external gate resistances is performed to address tradeoffs between switching loss and voltage overshoot during transients, as well as the thermal performance of the H-bridge building block. In addition, the design and characterization of the 20-kHz three-port transformer are also given. Comprehensive experimental studies are conducted on a full-power prototype to verify the proposed design. With a measured 99.1% peak efficiency, the proposed TAB converter can fulfill the requirements for solar-plus-storage applications.

14 SOLAR ENERGY↗
DOE OSTI2023

Single-Phase Jet Impingement Cooling for a Power-Dense Silicon Carbide Power Module

The adoption of silicon carbide (SiC) devices in the electric vehicle (EV) industry is increasing due to their superior performance over silicon devices. SiC devices enable further miniaturization of EV inverters, increasing their power density, which results in thermal management challenges. Here in this paper, the limits of single-phase jet impingement cooling are explored for an automotive SiC power module. We propose embedding pin fins in the direct-bonded-copper (DBC) substrate of the power module package using laser powder bed fusion additive manufacturing. The thermalhydraulic performance of the DBC-embedded pin fins is compared against folded fins that are directly soldered to the DBC substrate. A heat conduction analysis was conducted on a SiC package to determine the target heat transfer coefficient (HTC) for the heat sink. A water-ethylene glycol (WEG) jet impingement on the proposed concepts was studied using unit-cell models to achieve the target HTC. The studied designs put emphasis on the reliability and manufacturability requirements of the automotive industry. The thermal performance of DBC-embedded pin fins outperformed the DBC-soldered folded fins. The performance of the DBC-embedded pin fins is benchmarked against WEG-based cooling systems of commercial EVs. With the proposed cooling solution, we have shown a pathway of reducing the specific thermal resistance by 75% compared to BMW i3 thermal management system without any penalty on pressure drop or parasitic power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

State-of-the-Art Medium- and High-Voltage Silicon Carbide Power Modules, Challenges and Mitigation Techniques: A Review

Silicon carbide (SiC) power modules have been demonstrated potential for improving power density and efficiency for low-voltage power electronics systems. This has resulted in a paradigm shift toward development of medium-voltage and high-voltage (MV/HV) SiC power modules to revolutionize the future power grid and transportation systems. However, designing MV/HV SiC power modules involves significant design challenges due to higher blocking voltage and exacerbation of side effects due to high switching dv/dt and di/dt of SiC devices-concerns that may not be as critical as in low-voltage module development. This article reviews the development of state-of-the-art MV/HV SiC power modules, ranging from 3.3 kV to 40 kV, from both industry and academia. First, a discussion on SiC modules based on voltage level is presented. This is followed by a discussion of challenges associated with designing and testing MV/HV modules- including parasitic controls, electromagnetic interference (EMI), partial discharge, and thermal management-and the corresponding mitigation approaches from various perspectives. We conclude with a summary of major findings and future directions for the development of MV/HV modules.

EMI↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2024

Neutronics Analysis of Shielding Material Alternative to Tungsten Carbide in the FESS-FNSF Facility

Neutron transport calculations have been performed on advanced shielding materials. Metal hydrides and borohydrides were evaluated to find an alternative to tungsten carbide (WC), which is used in the in-vessel components. The study was conducted using a 22.5° sector and a detailed 360° geometry of the Fusion Energy System Studies-Fusion Nuclear Science Facility (FESS-FNSF) using OpenMC and FENDL-3.2b nuclear data library. Here, the neutronics analysis in this article was concentrated on calculating total nuclear (neutron and photon) heating at the magnet and the radiation damage of the inboard vacuum vessel (IBVV). For example, yttrium hydride (YH 2 ) and vanadium hydride (VH 2 ) showed lower radiation damage values compared to WC and other metals. Whereas alternative shielding materials did not show a significant change in the magnet nuclear heating.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Torsional Shear Strength Tests for Glass-Ceramic Joined Silicon Carbide

A torsion test on hour-glass-shaped samples with a full joined or a ring-shaped joined area was chosen in this study to measure shear strength of glass-ceramic joined silicon carbide. Shear strength of about 100 MPa was measured for full joined SiC with fracture completely inside their joined area. Attempts to obtain this shear strength with a ring-shaped joined area failed due to mixed mode fractures. However, full joined and ring-shaped steel hour-glasses joined by a glass-ceramic gave the same shear strength, thus suggesting that this test measures shear strength of joined components only when their fracture is completely inside their joined area.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Additive manufacturing of high‐density silicon carbide ceramics through post‐processing spark plasma sintering

This research advances the field of additive manufacturing (AM) of silicon carbide (SiC) ceramics by integrating spark plasma sintering (SPS) to enhance material density, mechanical strength, and thermal properties. Traditional AM techniques struggle to achieve the high‐density SiC required for demanding applications, such as aerospace engineering, where high thermal conductivity and mechanical strength are paramount. Here, our study addresses these challenges by incorporating SPS as a post‐processing step, achieving near‐theoretical maximum densities and significantly reducing porosity, thereby resulting in outstanding thermal conductivity in SiC ceramics. We developed a specialized SiC ink optimized for 3D printing, ensuring structural integrity after deposition through tailored rheological properties. The application of SPS facilitates rapid, uniform sintering, essential for attaining superior density, mechanical properties, and thermal performance. Our experimental results, confirmed through scanning electron microscopy analysis, demonstrate significant microstructural properties, mechanical strength, and thermal conductivity, showcasing the effectiveness of integrating SPS in AM processes. This innovative approach not only expands the capabilities of AM in producing complex, high‐density ceramic structures but also broadens the potential applications of SiC in demanding environments.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Liquid-Cooled Aluminum Silicon Carbide Heat Sinks for Reliable Power Electronics Packages

With recent advances in the state-of-the-art of power electronic devices, packaging has become one of the critical factors limiting the performance and durability of power electronics. To this end, this study investigates the feasibility of a novel integrated package assembly, which consists of copper circuit layer on an aluminum nitride (AlN) dielectric layer that is bonded to an aluminum silicon carbide (AlSiC) substrate. The entire assembly possesses a low coefficient of thermal expansion (CTE) mismatch which aids in the thermal cycling reliability of the structure. The new assembly can serve as a replacement for the conventionally used direct bonded copper (DBC) - Cu base plate - Al heat sink assembly. While improvements in thermal cycling stability of more than a factor of 18 has been demonstrated, the use of AlSiC can result in increased thermal resistance when compared to thick copper heat spreaders. To address this issue, we demonstrate that the integration of single phase liquid cooling in the AlSiC layer can result in improved thermal performance, matching that of copper heat spreading layers. This is aided by the use of heat transfer enhancement features built into the AlSiC layer. It is found that, for a given pumping power and through analytical optimization of geometries, either microchannels, pin fins and jets can be designed to yield a heat transfer coefficients of up to 65000 W m -2 K -1 , which can result in competitive device temperatures as Cu-baseplate designs, but with added reliability.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Multiphysics Co-Optimization Design and Analysis of Double-Side Cooled Silicon Carbide-Based Power Module: Preprint

With the rapid growth of Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs), much more rigorous design targets have been set for automotive power electronics, including high power density, high reliability, and low cost. Novel power module and inverter technologies based on wide bandgap (WEG) semiconductors have been developed to meet these design targets, while providing optimal power semiconductor operating temperature and promising thermomechanical performance. Compared with conventional cooling techniques which are normally applied only on one side of power module, double-side cooling approach is now believed to be the solution to enable high power density and low thermal resistance of WEG semiconductor-based power electronics. In this work, we develop a three-phase power module that is double-sided cooled using dielectric fluid jet impingement. In each phase, four silicon carbide (SiC) power semiconductors are bonded to copper busbars without electrical insulation layers. A finite element analysis (FEA) model is created for thermal and thermomechanical analysis. Based on FEA modeling results, we select particular dimensions for a parametric study to optimize thermal and mechanical performance. Using a multi-objective genetic algorithm (MOGA)-based optimization method, we have minimized the maximum junction temperature and thermal stresses within the power module. The multiphysics co-optimization approach has enabled an efficient design process of power modules with greatly reduced computational cost, as compared to conventional processes that rely on exhaustive numerical simulations and iterations.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2018

Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications

Bottoms-up cost analysis has been a mainstay of commoditized industry and manufacturing processes for years, however a holistic objective supply chain analysis to inform research and investment in the development of early stage technologies has not. The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of location-specific manufacturing cost, global supply chains, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform the roadmap of SiC technologies. In collaboration with PowerAmerica the project explores the bottoms-up cost analysis of wafers, devices, modules, and motor drives at the anticipated manufacturing levels. Leveraging these models, it outlines how the cost reduction potential of proposed research advances can be quantified.

42 ENGINEERING↗
DOE OSTI2019

Electrically driven optical interferometry with spins in silicon carbide

Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin’s weak coupling to its environment not only bestows excellent coherence properties but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy’s excited-state orbitals and induce Landau-Zener-Stückelberg interference fringes in the resonant optical absorption spectrum. In addition, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy’s symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d 1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Laser writing of nitrogen-doped silicon carbide for biological modulation

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Five-second coherence of a single spin with single-shot readout in silicon carbide

An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect’s spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T 2 > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Self-assembly of noble metal monolayers on transition metal carbide nanoparticle catalysts

Here, we demonstrated the self-assembly of transition metal carbide nanoparticles coated with atomically thin noble metal monolayers by carburizing mixtures of noble metal salts and transition metal oxides encapsulated in removable silica templates. This approach allows for control of the final core-shell architecture, including particle size, monolayer coverage, and heterometallic composition. Carbon-supported Ti 0.1 W 0.9 C nanoparticles coated with Pt or bimetallic PtRu monolayers exhibited enhanced resistance to sintering and CO poisoning, achieving an order of magnitude increase in specific activity over commercial catalysts for methanol electrooxidation after 10,000 cycles. These core-shell materials provide a new direction to reduce the loading, enhance the activity, and increase the stability of noble metal catalysts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Direct synthesis and chemical vapor deposition of 2D carbide and nitride MXenes

Two-dimensional transition-metal carbides and nitrides (MXenes) are a large family of materials actively studied for various applications, especially in the field of energy storage. MXenes are commonly synthesized by etching the layered ternary compounds, called MAX phases. We demonstrate a direct synthetic route for scalable and atom-economic synthesis of MXenes, including compounds that have not been synthesized from MAX phases, by the reactions of metals and metal halides with graphite, methane, or nitrogen. The direct synthesis enables chemical vapor deposition growth of MXene carpets and complex spherulite-like morphologies that form through buckling and release of MXene carpet to expose fresh surface for further reaction. The directly synthesized MXenes showed excellent energy storage capacity for lithium-ion intercalation.

Wang, Di↗
DOE OSTI2024

An active, stable cubic molybdenum carbide catalyst for the high-temperature reverse water-gas shift reaction

Although technologically promising, the reduction of carbon dioxide (CO 2 ) to produce carbon monoxide (CO) remains economically challenging owing to the lack of an inexpensive, active, highly selective, and stable catalyst. We show that nanocrystalline cubic molybdenum carbide (α-Mo 2 C), prepared through a facile and scalable route, offers 100% selectivity for CO 2 reduction to CO while maintaining its initial equilibrium conversion at high space velocity after more than 500 hours of exposure to harsh reaction conditions at 600°C. The combination of operando and postreaction characterization of the catalyst revealed that its high activity, selectivity, and stability are attributable to crystallographic phase purity, weak CO-Mo 2 C interactions, and interstitial oxygen atoms, respectively. Mechanistic studies and density functional theory (DFT) calculations provided evidence that the reaction proceeds through an H 2 -aided redox mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗