Search NASA⌕ Search

SEARCH · Search NASA

Results for “POWER ELECTRONICS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,027 records · Page 57

A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

14 SOLAR ENERGY↗

Smart patch piezoceramic actuator issues

The Phillips Laboratory is undertaking the challenge of finding new and innovative ways to integrate sensing, actuation, and the supporting control and power electronics into a compact self-contained unit to provide vibration suppression for a host structure. This self-contained unit is commonly referred to as a smart patch. The interfaces to the smart patch will be limited to standard spacecraft power and possibly a communications line. The effort to develop a smart patch involves both contractual and inhouse programs which are currently focused on miniaturization of the electronics associated with vibrational control using piezoceramic sensors and actuators. This paper is comprised of two distinct parts. The first part examines issues associated with bonding piezoceramic actuators to a host structure. Experimental data from several specimens with varying flexural stiffness are compared to predictions from two piezoelectric/substructure coupling models, the Blocked Force Model and the Uniform Strain Model with Perfect Bonding. The second part of the paper highlights a demonstration article smart patch created using the insights gained from inhouse efforts at the Phillips Laboratory. This demonstration article has self contained electronics on the same order of size as the actuator powered by a voltage differential of approximately 32 volts. This voltage is provided by four rechargeable 8 volt batteries.

Griffin, Steven F.↗

Comprehensive Evaluation of Power Supplies at Cryogenic Temperatures for Deep Space Applications

The operation of power electronic systems at cryogenic temperatures is anticipated in many future space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environments, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. DC/DC converters are widely used in space power systems in the areas of power management, conditioning, and control. As part of the on-going Low Temperature Electronics Program at NASA, several commercial-off-the-shelf (COTS) DC/DC converters, with specifications that might fit the requirements of specific future space missions have been selected for investigation at cryogenic temperatures. The converters have been characterized in terms of their performance as a function of temperature in the range of 20 C to - 180 C. These converters ranged in electrical power from 8 W to 13 W, input voltage from 9 V to 72 V and an output voltage of 3.3 V. The experimental set-up and procedures along with the results obtained on the converters' steady state and dynamic characteristics are presented and discussed.

Patterson, Richard L.↗

Electric field stimulation setup for photoemission electron microscopes

Manipulating magnetisation by the application of an electric field in magnetoelectric multiferroics represents a timely issue due to the potential applications in low power electronics and the novel physics involved. Thanks to its element sensitivity and high spatial resolution, X-ray photoemission electron microscopy is a uniquely suited technique for the investigation of magnetoelectric coupling in multiferroic materials. In this work, we present a setup that allows for the application of in situ electric and magnetic fields while the sample is analysed in the microscope. As an example of the performances of the setup, we present measurements on Ni/Pb(Mg{sub 0.66}Nb{sub 0.33})O{sub 3}-PbTiO{sub 3} and La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/PMN-PT artificial multiferroic nanostructures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties

Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

EIC Yellow Report

he Electron-Ion Collider (EIC) is a new, innovative, large-scale particle accelerator conceived by U.S. nuclear physicists over two decades and planned for construction at Brookhaven National Laboratory on Long Island, New York by the U.S. Department of Energy in the 2020s. The EIC will study protons, neutrons and atomic nuclei with the most powerful electron microscope ever built, in terms of its unique versatility of resolving power and intensity. The resolution and intensity is achieved by colliding high-energy electrons with high-energy protons or (a range of different) ion beams. The EIC provides the capability of colliding beams of polarized electrons with polarized beams of light ions, and this all at high intensity. The EIC was established as the highest priority for new construction in the 2015 US Nuclear Physics Long Range Plan, was favorably endorsed by a committee established by the National Academy of Sciences in 2018 to assess the science case. In December 2019, the EIC was granted Critical Design Zero by the US Department of Energy, which launched the EIC as an official project of the US government

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Harmonic cancellation within AC low voltage distribution for a realistic office environment

An increase of non-linear loads, primarily from power electronics, has substantially increased current harmonics in commercial buildings, which contributes to decreased transformer efficiency / lifespan and poor power quality. This study uses recorded power consumption data from common miscellaneous electric loads (MELs) seen in offices, combined with detailed characterizations of example MELs, to simulate harmonic cancellation within building circuits. Typically, harmonic cancellation studies assume that AC converters operate across their rated power range. However, this study finds that common MELs operate below 40% of rated power the majority of the time when not quiescent; 89% of sampled devices never operated above 60% of rated power. Simulations using these more realistic power levels indicate current-harmonic cancellation (3rd to 13th harmonic) is significantly lower than that predicted when using full-range power assumptions, resulting in minor errors for low-order harmonics and larger errors for higher order harmonics. Furthermore, increased MELs load diversity increases harmonic cancellation, but insufficiently to eliminate errors. In contrast, blending lighting loads with MELs on the secondaries of distribution transformers improves harmonic cancellation to near those predicted by traditional methods. These results indicate that realistic power levels, as well as better characterization of harmonics from typical MELs, should be used to estimate harmonic cancellation.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Future energy infrastructure, energy platform and energy storage

Today fossil energy dominates energy consumption across the world. There has been an increasing momentum to reduce fossil energy consumption and increase renewable energy utilization to more than 70%. Such high penetrations of distributed renewable resources bring large uncertainty and complexity that cannot be easily handled by the current infrastructure. For the last two decades, telecommunication industry has gone through a similar transition from centralized to distributed systems, and more recently to platform approaches, which become the corner stone of today’s vibrant platform economy. Based on telecommunication history, we believe that a platform-based approach, called the energy platform, is a viable solution for addressing the renewable energy challenges. The energy platform consists of an array of computational algorithms, sensing and control technologies for key industry, energy generators and users to jointly manage and control the complex energy infrastructure. It includes the following key components: (1) the hardware and software to generate, store, control and transmit electricity/data (the energy cloud), (2) the digital platforms and tools for key energy producers, digital, service and communication industry to share the assets, participate in and manage the complex infrastructure, and for customers to participate in energy transactions, (3) the transaction platform for new service and business models. Additionally, the energy platform requires breakthroughs in large scale energy storage and many other areas including efficient power electronics, sensors and controls, new mathematical and computational tools, and deep integration of energy technologies and information sciences to control and stabilize such complex chaotic systems.

25 ENERGY STORAGE↗

Generalizing Similarity Laws for Radio-Frequency Discharge Plasmas across Nonlinear Transition Regimes

We generalize similarity theory based on the scaling and solution invariance of the Boltzmann equation, coupled with the Poisson equation, and demonstrate similarity laws for radio-frequency (rf) discharge plasmas across three nonlinear transitional regimes, namely, the alpha-gamma mode transition, the stochastic-Ohmic-heating mode transition, and the bounce-resonance-heating mode transition. Fundamental plasma parameters, e.g., the electron power absorption, under similar discharge conditions are examined via fully kinetic particle-in-cell simulations, and electron-kinetic invariance is exemplified in similar rf discharge plasmas. The results unambiguously confirm the applicability of similarity laws for rf plasmas in extended operating regimes, and strengthen the foundations and framework of similarity physics with universality.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Integrated Multiport Conductive and Wireless Architecture for Electric Vehicle Charging

This paper explores the opportunity of integrating conductive and wireless electric vehicle charging architectures and presents an integrated multiport charging architecture suitable for simultaneous conductive and wireless charging of electric vehicles. The architecture successfully integrates the primary side power electronic high frequency inverter and the high frequency transformer with the wireless transmitter and receiver to achieve independent power flow at each port. Design of the integrated magnetics is discussed, and results are presented that demonstrate the decoupled power flow at each port. The proposed integrated architecture increases the utilization of the same charging infrastructure without a proportionate increase in the cost.

Mukherjee, Subho [ORNL] (ORCID:0009000672297925)↗

Controllable Grid Interface for Testing Ancillary Service Controls and Fault Performance of Utility-Scale Wind Power Generation: Preprint

The rapid expansion of wind power has led many transmission system operators to demand modern wind power plants to comply with strict interconnection requirements. Such requirements involve various aspects of wind power plant operation, including fault ride-through and power quality performance as well as the provision of ancillary services to enhance grid reliability. During recent years, the National Renewable Energy Laboratory (NREL) of the U.S. Department of Energy has developed a new, groundbreaking testing apparatus and methodology to test and demonstrate many existing and future advanced controls for wind generation (and other renewable generation technologies) on the multimegawatt scale and medium-voltage levels. This paper describes the capabilities and control features of NREL's 7-MVA power electronic grid simulator (also called a controllable grid interface, or CGI) that enables testing many active and reactive power control features of modern wind turbine generators -- including inertial response, primary and secondary frequency responses, and voltage regulation -- under a controlled, medium-voltage grid environment. In particular, this paper focuses on the specifics of testing the balanced and unbalanced fault ride-through characteristics of wind turbine generators under simulated strong and weak medium-voltage grid conditions. In addition, this paper provides insights on the power hardware-in-the-loop feature implemented in the CGI to emulate (in real time) the conditions that might exist in various types of electric power systems under normal operations and/or contingency scenarios. Using actual test examples and simulation results, this paper describes the value of CGI as an ultimate modeling validation tool for all types of 'grid-friendly' controls by wind generation.

17 WIND ENERGY↗

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films were grown by plasma-assisted molecular beam epitaxy onto bulk AlN substrates and doped with 1018–1020 cm−3 Si. We examine electron transport in heavily Si-doped AlxGa1−xN with x ≥ 0.65 using magnetic resonance, which allows us to probe the neutral donors directly rather than the free carriers and avoids complications due to electrical contacts. Transport was studied through the temperature-dependent linewidth of the electron paramagnetic resonance (EPR) signature for the neutral donor. Analysis shows evidence of hopping conductivity in the most lightly doped samples and impurity band formation in the most heavily doped ones. The EPR results, which are consistent with Hall measurements performed on the same samples, are promising for the development of highly conducting high Al content AlGaN.

Materials Science↗

High-energy electron-beam deposition onto a hot graphite surface.

The momentum transfer and blow-off vapor yield resulting from the deposition of a pulsed high-power electron beam onto a plane graphite target with surface temperatures of 300 K and 5000 K are examined experimentally. The results show that with identical electron beams the momentum transfer and vapor yield are between two and three times larger when irradiating the 5000 K surface as compared with the 300 K surface.

Robin, J. E.↗

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO 3

The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd x Sr 1 – x SnO 3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 10 18 cm –3 to 2.0 × 10 20 cm –3 . Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm 2 V –1 s –1 , among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm 2 V –1 s –1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics

36 MATERIALS SCIENCE↗

Toward high-energy-density, high-efficiency, and moderate-temperature chip-scale thermophotovoltaics

The challenging problem of ultra-high-energy-density, high-efficiency, and small-scale portable power generation is addressed here using a distinctive thermophotovoltaic energy conversion mechanism and chip-based system design, which we name the microthermophotovoltaic (μTPV) generator. The approach is predicted to be capable of up to 32% efficient heat-to-electricity conversion within a millimeter-scale form factor. Although considerable technological barriers need to be overcome to reach full performance, we have performed a robust experimental demonstration that validates the theoretical framework and the key system components. Even with a much-simplified μTPV system design with theoretical efficiency prediction of 2.7%, we experimentally demonstrate 2.5% efficiency. The μTPV experimental system that was built and tested comprises a silicon propane microcombustor, an integrated high-temperature photonic crystal selective thermal emitter, four 0.55-eV GaInAsSb thermophotovoltaic diodes, and an ultra-high-efficiency maximum power-point tracking power electronics converter. The system was demonstrated to operate up to 800 °C (silicon microcombustor temperature) with an input thermal power of 13.7 W, generating 344 mW of electric power over a 1-cm 2 area.

14 SOLAR ENERGY↗

Electron Transport Properties of Al x Ga 1 – x N / Ga N Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

High-electron-mobility transistors (HEMTs) based on Al x Ga 1–x N/GaN heterostructures have great potential for applications in power electronics and radio frequency applications. Operating under large bias and electric fields, hot electrons are present in the channel where they can activate preexisting benign defects that cause scattering or carrier trapping, resulting in device degradation, such as threshold-voltage shifts and transconductance degradation. We report a comprehensive investigation of the electron transport properties of wurtzite-phase GaN and AlN and of an Al 0.25 Ga 0.75 N/GaN HEMT by solving the Boltzmann transport equation with a synchronous ensemble Monte Carlo technique and employing first-principles electronic properties, including the full energy bands, phonon dispersions, and electron-phonon scattering rates. We find that, for electron collisions with the highest-energy optical phonon mode, nonpolar scattering by optical phonons contributes comparable to polar scattering. Polar scattering with acoustic phonons, that is, piezoelectric scattering, is found to be as important as the polar scattering with optical phonons for low-energy electrons at room temperature. Here, we compare the calculated high-field transport characteristics of bulk GaN with previously reported results. We also calculate the nonpolar acoustic deformation potential, nonpolar optical deformation potential, and high-field transport characteristics of bulk AlN. We find that inclusion of piezoelectric scattering results in a low-field electron mobility of approximately 450cm 2 /(V s), which is very close to the experimental value. Simulation results are presented for an Al 0.25 Ga 0.75 N/GaN HEMT, including electric field, average carrier kinetic energy, and drift velocity in the channel. Finally, we present the carrier energy distribution function in the conducting channel, which is key to accurately determine hot-carrier-caused device degradation and identify possible routes to an improved device design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

current commutation, current source inverter, powe↗

Silver stain for electron microscopy

Ammoniacal silver stain used for light microscopy was adapted advantageously for use with very thin biological sections required for electron microscopy. Silver stain can be performed in short time, has more contrast, and is especially useful for low power electron microscopy.

Corbett, R. L.↗