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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Role of structural defects in the ultraviolet luminescence of multiwall boron nitride nanotubes

BN nanotubes (BNNTs) are structurally similar to their carbon counterparts, though much less investigated. New synthesis methods have been recently reported, enabling the production of industrial quantities and stimulating the search of new applications for the BNNTs. In this paper, we investigate the luminescence of multiwall BNNTs. By performing cathodoluminescence experiments on single tubes at 10 K, we show that the tube luminescence is highly heterogeneous (i) from tube to tube and (ii) spatially along a single tube. By combining cathodoluminescence measurements with a nanometer excitation and transmission electron microscopy on the same tube, we correlate luminescence and structural features. We conclude that the near-band-edge luminescence of BNNTs (≈5.4 eV) is related to the presence of extended structural defects, such as dislocations or ruptures in the wall stacking.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

The dynamic behavior of e-beam irradiated Si atoms in the bulk and at the edges of single-layer graphene is examined using scanning transmission electron microscopy (STEM). A deep learning network is used to convert experimental STEM movies into coordinates of individual Si and carbon atoms. A Gaussian mixture model is further used to establish the elementary atomic configurations of the Si atoms, defining the bonding geometries and chemical species and accounting for the discrete rotational symmetry of the host lattice. The frequencies and Markov transition probabilities between these states are determined. This analysis enables insight into the defect populations and chemical transformation networks from the atomically resolved STEM data. Here, a clear tendency is observed for the formation of a 1D Si crystal along zigzag direction of graphene edges and for the Si impurity coupling to topological defects in bulk graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Determination of the density of the defect states in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film Deposited by using rf-magnetron sputtering technique

A memory structure Pt/Al{sub 2}O{sub 3}/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Al{sub 2}O{sub 3}/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} high-k film was estimated as 6.63 × 10{sup 12} cm{sup −2}, indicating a body defect density of larger than 2.21 × 10{sup 19} cm{sup −3}. It is observed that the post-annealing in N{sub 2} can reduces the defect density in Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2014

TRISO-Coated Fuel Durability Under Extreme Conditions

The PIs propose to examine TRISO-coated particles (SiC and ZrC coatings) in an integrated two-part study. In the first part, experiments will be performed to assess the reaction kinetics of the carbides under CO-CO2 environments at temperatures up to 1800 degree C. Kinetic model will be applied to describe the degradation. Scanning and transmission electron microscopy will be employed to establish the chemical and microstructure evolution under the imposed environmental conditions. The second part of the proposed work focuses on establishing the role of the high temperature, environmental exposure described above on the mechanical behavior of TRISO-coated particles. Electron microscopy and other advanced techniques will be subsequently performed to evaluate failure mechanisms. The work is expected to reveal relationships between corrosion reactions, starting material characteristics (polytype of SiC, impurity concentration, flaw distribution), flaw healing behavior, and crack growth.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-Temperature Nucleation of GaP on V-Grooved Si

The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface pretreatments on the nucleation of GaP on v-grooved Si in a high-temperature regime, which offers the promise of a defect-free GaP/Si interface favorable for Si passivation and dislocation glide in the GaP. X-ray photoelectron spectroscopy was used to understand the Si surface chemistry prior to nucleation, and transmission electron microscopy was used to probe material quality of the nuclei. Temperature and V/III ratio were found to control the facet selectivity of nucleation. We demonstrate a condition of high temperature and high V–III ratio that leads to uniform nucleation at the bottom of the trenches, with initial material free of nucleation-related interfacial defects. This optimized condition was then shown to coalesce into a thin film after additional growth.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained Ge

Device-quality tensile-strained Ge (ε-Ge) grown on a large bandgap semiconductor with superior electrical and optical carrier confinement is essential for group-IV-based optoelectronics. Properties of ε-Ge active layers synthesized on In 0.24 Ga 0.76 As buffers with two different surface terminations─arsenic-rich and indium-rich─were experimentally demonstrated, highlighting the factors not considered in theoretical calculations. High-resolution X-ray diffraction and Raman spectroscopy analyses of these ε-Ge/In 0.24 Ga 0.76 As heterostructures confirmed the fully strained (1.6%) and partially relaxed (0.82%) nature of the ε-Ge bonded with arsenic-terminated (Ge As-terminated ) and indium-terminated (Ge In-terminated ) In 0.24 Ga 0.76 As stressors, respectively. High-resolution cross-sectional transmission electron microscopy showed a coherent, sharp, and fully strained ε-Ge/In 0.24 Ga 0.76 As heterointerface in the Ge As-terminated heterostructure, whereas microtwin defects were present in the Ge In-terminated heterostructure. These heterostructures were further characterized by evaluating the minority carrier lifetimes, high for Ge As-terminated (525 ns) and low for Ge In-terminated (69 ns), using the photoconductive decay technique. Moreover, band alignment was constructed using X-ray photoelectron spectroscopy, where the Ge As-terminated heterostructure revealed that both holes and electrons were confined within the ε-Ge active layer as a type-I band alignment with ΔE V, As-terminated = 0.22 eV and ΔE C,As-terminated = 0.38 eV. On the other hand, the Ge In-terminated heterostructure exhibited a type-II band alignment with ΔE V,In-terminated = – 0.02 eV and ΔE C,In-terminated = 0.53 eV. Furthermore, the magnetotransport properties revealed high mobility (321 cm 2 /(V s)) with single-electron transport in Ge As-terminated heterostructure and low mobility (3.34 cm 2 /(V s)) with multihole transport in the Ge In-terminated heterostructure. Therefore, preferring the ε-Ge on the arsenic-rich surface of In 0.24 Ga 0.76 As stressor over the indium-rich surface during material synthesis offers device-quality materials with high carrier lifetime and superior carrier confinement, which can provide an opportunity to fabricate efficient group-IV-based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Mechanism of β-FeSi{sub 2} precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Fe-implanted Si-wafers have been oxidized at 900 °C and 1100 °C in order to investigate the behaviour of Fe atoms at the growing SiO{sub 2}/Si interface and the impact on the integrity of microelectronic devices of an involuntary Fe contamination before or during the oxidation process. As-implanted and oxidized wafers have been characterized using secondary ion mass spectroscopy, atom probe tomography, and high-resolution transmission electron microscopy. Experimental results were compared to calculated implantation profiles and simulated images. Successive steps of iron disilicide precipitation and oxidation were evidenced during the silicon oxidation process. The formation of characteristic pyramidal-shaped defects, at the SiO{sub 2}/Si interface, was notably found to correlate with the presence of β-FeSi{sub 2} precipitates. Taking into account the competitive oxidation of these precipitates and of the surrounding silicon matrix, dynamic mechanisms are proposed to model the observed microstructural evolution of the SiO{sub 2}/Si interface, during the growth of the silicon oxide layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1975

Growth defects in thick ion-plated coatings

Industrial ion plating conditions were selected to deposit metallic coatings such as copper, gold, and chromium 2 micrometer thick on metal and glass substrates. The surface finishes of 304 stainless steel, copper, and brass were utilized with mechanically and electrolytically polished surfaces. Nodular growth occurred in these coatings during ion plating as revealed by scanning electron microscopy. Surface irregularities such as scratches, steps, ledges, and so forth are responsible for outward growth, the typical cone type, whereas surface contaminants and loosely settled foreign particles are responsible for lateral growth; namely, the extreme localized surface outgrowths. These defect crystallographic features create porosity in the coatings when subjected to stresses and strains.

Spalvins, T.↗
DOE OSTI2017

Effect of Laser Shock Peening on the Microstructures and Properties of Oxide-Dispersion-Strengthened Austenitic Steels

Oxide-dispersion-strengthened (ODS) austenitic steels are promising materials for next-generation fossil and nuclear energy systems. In this study, laser shock peening (LSP) has been applied to ODS 304 austenitic steels, during which a high density of dislocations, stacking faults, and deformation twins are generated in the near surface of the material due to the interaction of laser-driven shock waves and the austenitic steel matrix. The dispersion particles impede the propagation of dislocations. The compressive residual stress generated by LSP increases with successive LSP scans and decreases along the depth, with a maximum value of -369MPa. The hardness on the surface can be improved by 12% using LSP. In situ transmission electron microscopy (TEM) irradiation studies reveal that dislocations and incoherent twin boundaries induced by LSP serve as effective sinks to annihilate irradiation defects. Furthermore, these findings suggest that LSP can improve the mechanical properties and irradiation resistance of ODS austenitic steels in nuclear reactor environments.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Microstructural stability and mechanical behavior of FeNiMnCr high entropy alloy under ion irradiation

In recent years, high entropy alloys (HEAs) have attracted significant attention due to their excellent mechanical properties and good corrosion resistance, making them potential candidates for high temperature fission and fusion structural applications. However there is very little known about their radiation resistance, particularly at elevated temperatures relevant for energy applications. In the present study, a single phase (face centered cubic) concentrated solid solution alloy of composition 27%Fe-28%Ni-27%Mn-18%Cr was irradiated with 3 or 5.8 MeV Ni ions at temperatures ranging from room temperature to 700 °C and midrange doses from 0.03 to 10 displacements per atom (dpa). Transmission electron microscopy (TEM), scanning transmission electron microscopy with energy dispersive x-ray spectrometry (STEM/EDS) and X-ray diffraction (XRD) were used to characterize the radiation defects and microstructural changes. Irradiation at higher temperatures showed evidence of relatively sluggish solute diffusion with limited solute depletion or enrichment at grain boundaries. The main microstructural feature at all temperatures was high-density small dislocation loops. Voids were not observed at any irradiation condition. Nano-indentation tests on specimens irradiated at room temperature showed a rapid increase in hardness ~35% and ~80% higher than the unirradiated value at 0.03 and 0.3 dpa midrange doses, respectively. The irradiation-induced hardening was less pronounced for 500 °C irradiations (<20% increase after 3 dpa). Overall, the examined HEA material exhibits superior radiation resistance compared to conventional single phase Fe-Cr-Ni austenitic alloys such as stainless steels. Furthermore, the present study provides insight on the fundamental irradiation behavior of a single phase HEA material over a broad range of irradiation temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Microstructural evolution and hardness changes in ion irradiated nickel-based Haynes 282 superalloy

This study investigated the crucial aspects of thermal and irradiation stability in precipitation hardened Haynes 282 Ni-based superalloy. The Haynes 282 Ni-based alloy was irradiated by 8 MeV Ni 3+ ions to assess its resistance to phase instabilities and mechanical property alterations. The mid-range doses (at a depth of ∼1 µm) were 1 and 10 displacements per atom (dpa) at temperatures of 600°C and 750°C. Nanoindentation tests provided insights into bulk equivalent hardness of the irradiated and pristine regions, while scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) were used to examine the microstructural evolution of irradiation-induced defects and γ′ -Ni 3 (Al, Ti) precipitates and defect structure under irradiation. These precipitates, with an average diameter of 29 nm and a number density of 5 x 10 21 /m 3 , acted as robust dispersion strengthening agents with high radiation point defect sink strength. Remarkably, irradiation did not significantly alter the size or number density of the γ′ precipitates, indicating exceptional thermal stability and radiation resistance of these precipitates at the examined conditions. Radiation-induced dislocation loops were observed at 600°C, albeit without a substantial impact on mechanical properties due to the dominance of γ′ precipitates on the overall alloy strength. The superior stability of γ′ precipitates observed in this study contrasts with several previous research findings on Ni-based alloys that reported poor precipitate stability. Plausible reasons for this difference are discussed. Moreover, this work explicitly outlines a physically grounded approach to ensure accurate microstructure-hardness correlations and clarifies the hardening model by addressing common misapplications of superposition in prior studies.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Controllable Formation of Threefold-Coordinated Oxygen in Graphene by Low-Energy Ion Implantation

The atomically precise engineering of impurities in graphene and the understanding of their structural and carrier-dependent electronic properties at the nanoscale are crucial for advancing graphene-based nanoelectronics, catalysis, and energy technologies. Here, we demonstrate controllable incorporation of the elusive 3-fold-coordinated O substitutions into graphene using low-energy O + ion implantation under ultrahigh-vacuum conditions. By combining high-resolution scanning tunneling microscopy and spectroscopy (STM/S), bond-resolved noncontact atomic force microscopy techniques, and density functional theory (DFT) calculations, we resolve both the structural and electronic properties of the O-related defects. The STM/S measurements, corroborated by DFT calculations, uncover a characteristic impurity state that is energetically pinned to the Dirac point across different charge-carrier doping regimes. Molecular dynamics simulations further reveal the distribution of implantation-induced configurations and identify the formation of 3-fold-coordinated O dopants. Furthermore, this work provides a viable route to incorporate 3-fold-coordinated O dopants and opens new opportunities for controlled defect engineering in graphene.

3-fold-coordinated oxygen↗
DOE OSTI2016

Slip-activated surface creep with room-temperature super-elongation in metallic nanocrystals

Atom diffusion assisted by surfaces or interfaces (e.g. Coble creep) has been known to be the origin of large creep rates and superplastic softening in nanosized crystals at low temperature. By contrast, source-limited crystal slip in defect-free nanostructures engenders important strengths, but also premature plastic instability and low ductility. Here, using in-situ transmission electron microscopy, we report a slip-activated surface creep mechanism that suppresses the tendency towards plastic instability without compromising the strength, resulting in ultra-large room-temperature plasticity in face-centered-cubic silver nanocrystals. This phenomenon is shown experimentally and theoretically to prevail over a material-dependent range of diameters where surface dislocation nucleation becomes a stimulus to diffusional creep. This work provides new fundamental insight into coupled diffusive-displacive deformation mechanisms maximizing ductility and strength simultaneously in nanoscale materials.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2019

Dynamic imaging of crystalline defects in lithium-manganese oxide electrodes during electrochemical activation to high voltage

Crystalline defects are commonly generated in lithium-metal-oxide electrodes during cycling of lithium-ion batteries. Their role in electrochemical reactions is not yet fully understood because, until recently, there has not been an effective operando technique to image dynamic processes at the atomic level. In this study, two types of defects were monitored dynamically during delithiation and concomitant oxidation of oxygen ions by using in situ high-resolution transmission electron microscopy supported by density functional theory calculations. One stacking fault with a fault vector b/6[110] and low mobility contributes minimally to oxygen release from the structure. In contrast, dissociated dislocations with Burgers vector of c/2[001] have high gliding and transverse mobility; they lead to the formation, transport and release subsequently of oxygen related species at the surface of the electrode particles. This work advances the scientific understanding of how oxygen participates and the structural response during the activation process at high potentials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe) 1-x (PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Chirality reversal of magnetic solitons in chiral Cr 1/3 TaS 2

Ferromagnetism in two-dimensional (2D) materials provides an ideal platform to study emergent electromagnetic phenomena in low dimensions for future spintronics. In magnetic-element intercalated transition metal dichalcogenides, topologically nontrivial spin textures, such as chiral helimagnetic spin states and chiral soliton lattices, are realized due to the chiral lattice distortions induced by intercalated magnetic ions. Consequently, the magnetic chirality is predictably determined by the sign of antisymmetric exchange interaction (or Dzyaloshinskii–Moriya interaction, DMI) vector that is coupled to the underlying crystal chirality. Here, using cryogenic Lorentz phase microscopy, we directly observed the chirality reversal behavior of the chiral soliton lattices in Cr 1/3 TaS 2 across the structural defects. We show that a partial 1 T stacking in 2H-TaS 2 locally reduces DMI, leading to magnetic chirality reversal with direct atomic resolution imaging. Furthermore, our experimental results show that manipulation of stacking sequence provides a viable way to control the chirality of topologically nontrivial soliton lattices in 2D magnets.

2D materials↗