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Results for “electrical doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Optical and structural properties of Fe-doped SnO{sub 2} nanoparticles prepared by co-precipitation method

Today nanomaterials plays important role in every field, due to their unique mechanical, chemical and electrical properties which are completely different from the bulk materials. With reduction in the size of material its properties are dynamically changed. Semiconductor materials are widely used in electronic devices but in the field of optoelectronic these materials have some limitations. Tin oxide could be the material which could be used in these applications without limitations. Doped Tin Oxide is an oxygen deficient material which could be beneficial for transparent conducting oxide. Iron doped SnO{sub 2} prepared by co-precipitation method. Studies on structural properties of undoped and doped SnO{sub 2} were done by X-ray diffraction. The XRD results have shown that the size of the nanoparticles decreases with Fe doping down to 53nm. Optical Properties were studied by UV-visible spectroscopy. Band gap was found to decrease with increase in iron content in samples.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Spin injection and diffusion in silicon based devices from a space charge layer

We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band with activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ag-doped As–S–Se chalcogenide glasses: a correlative study of structural and dielectrical properties

This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of Nb-doped TiO{sub 2} on nanocomposited aligned ZnO nanorod/TiO{sub 2}:Nb for dye-sensitized solar cells

The Nb-doped TiO{sub 2} films were deposited on glass substrate at different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively and their electrical and structural properties were investigated. Subsequently, the Nb-doped TiO{sub 2} films were deposited on top of aligned ZnO Nanorod on ITO glass substrates using spin coating technique. The nanocomposited aligned ZnO nanorod/Nb-doped TiO{sub 2} (TiO{sub 2}:Nb) were coated with different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively. The Dye-sensitized solar cells were fabricated from the nanocomposited aligned ZnO nanorod/TiO{sub 2}:Nb photoanodes and their effects on the performance of the DSSCs were investigated. From the solar simulator measurement of DSSC the solar energy conversion efficiency (η) of 5.376% under AM 1.5 was obtained for the ZnO nanorod/TiO{sub 2}:Nb-5at.%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Enhanced hydrodynamic transport in near magic angle twisted bilayer graphene

Using the semiclassical quantum Boltzmann theory and employing the Dirac model with twist angle-dependent Fermi velocity, we obtain results for the electrical resistivity, the electronic thermal resistivity, the Seebeck coefficient, and the Wiedemann-Franz ratio in near magic angle twisted bilayer graphene, as functions of doping density (around the charge-neutrality point) and modified Fermi velocity $\tilde{v}$. The $\tilde{v}$ dependence of the relevant scattering mechanisms, i.e., electron-hole Coulomb, long-range impurities, and acoustic gauge phonons, is considered in detail. We find a range of twist angles and temperatures, where the combined effect of momentum-nonconserving collisions (long-range impurities and phonons) is minimal, opening a window for the observation of strong hydrodynamic transport. In this work, several experimental signatures are identified, such as a sharp dependence of the electric resistivity on doping density and a large enhancement of the Wiedemann-Franz ratio and the Seebeck coefficient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Studies of ferroelectric and dielectric properties of pure and doped barium titanate prepared by sol-gel method

In this work, Barium Titanate (BaTiO{sub 3}) powders were synthesized via Sol-Gel auto combustion method using citric acid as a chelating agent. We study the behavior of ferroelectric and dielectric properties of pure and doped BaTiO{sub 3} on different concentration. To understand the phase and structure of the powder calcined at 900°C were characterized by X-ray Diffraction shows that tetragonal phase is dominant for pure and doped BTO and data fitted by Rietveld Refinement. Electric and Dielectric properties were characterized by P-E Hysteresis and Dielectric measurement. In P-E measurement ferroelectric loop tracer applied for different voltage. The temperature dependant dielectric constant behavior was observed as a function of frequency recorded on hp-Hewlett Packard 4192A, LF impedance, 5Hz-13Hz analyzer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

An analysis of lead-free (Bi{sub 0.5}Na{sub 0.5}){sub 0.915}-(Bi{sub 0.5}K{sub 0.5}){sub 0.05}Ba{sub 0.02}Sr{sub 0.015}TiO{sub 3} ceramic for efficient refrigeration and thermal energy harvesting

This article demonstrates the colossal energy harvesting capability of a lead-free (Bi{sub 0.5}Na{sub 0.5}){sub 0.915}-(Bi{sub 0.5}K{sub 0.5}){sub 0.05}Ba{sub 0.02}Sr{sub 0.015}TiO{sub 3} ceramic using the Olsen cycle. The maximum harvestable energy density estimated for this system is found to be 1523 J/L (1523 kJ/m{sup 3}) where the results are presented for extreme ambient conditions of 20–160 °C and electric fields of 0.1–4 MV/m. This estimated energy density is 1.7 times higher than the maximum reported to date for the lanthanum-doped lead zirconate titanate (thin film) system. Moreover, this study introduces a generalized and effective solid state refrigeration cycle in contrast to the ferroelectric Ericson refrigeration cycle. The cycle is based on a temperature induced polarization change on application of an unipolar electric field to ferroelectric ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of graphene on electro-optic switching and spontaneous polarization of a ferroelectric liquid crystal

A small quantity of graphene flakes was doped in a ferroelectric liquid crystal (FLC), and the field-induced ferroelectric electro-optic switching was found to be significantly faster in the FLC + graphene hybrid than that of the pure FLC. Further studies revealed that the suspended graphene flakes enhanced the FLC's spontaneous polarization by improving smectic-C ordering resulting from the π–π electron stacking, and reduced rotation viscosity by trapping some of the free ions of the FLC media. These effects coherently impacted the FLC-switching phenomenon, enabling the FLC molecules to switch faster on reversing an external electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Silver Doped Zinc Oxide as Nanofiller for the Development of Biopolymer Nanocomposites from Chitin and Cashew Gum

Nanocomposites based on chitin (CT) and cashew gum (CG) with different concentrations of silver doped zinc oxide nanoparticles (Ag–ZnO) were prepared and characterized by FTIR, UV, XRD, TEM, SEM, DSC, TGA, electrical conductivity measurements. FTIR spectra showed that the characteristic absorption band of the blend was shifted to a higher frequency in nanocomposites, indicating the intermolecular interaction between the blend and nanoparticles. The change in the UV absorption of nanocomposites relative to that of pure blend indicated the successful encapsulation of crystalline metal oxide nanoparticles in the blend matrix. XRD patterns showed that the diffraction peak of the composites were shifted near to the metal oxide peak which indicated that the surface of Ag–ZnO was perpendicular to CT/CG and changed from a semi-crystalline nature to a crystalline structure. The morphological analysis using SEM and TEM showed a uniform attachment of nanoparticles within the CT/CG blend. DSC analysis showed the increased glass transition temperature by the addition of nanoparticles. Thermal stability of nanocomposites was higher than the blend and thermal stability increased with an increase in the content of nanoparticles. The different electrical properties such as AC conductivity and dielectric behaviour of the composites were increased with an increased loading of nanoparticles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Metallic surface doping of metal halide perovskites

Abstract Intentional doping is the core of semiconductor technologies to tune electrical and optical properties of semiconductors for electronic devices, however, it has shown to be a grand challenge for halide perovskites. Here, we show that some metal ions, such as silver, strontium, cerium ions, which exist in the precursors of halide perovskites as impurities, can n-dope the surface of perovskites from being intrinsic to metallic. The low solubility of these ions in halide perovskite crystals excludes the metal impurities to perovskite surfaces, leaving the interior of perovskite crystals intrinsic. Computation shows these metal ions introduce many electronic states close to the conduction band minimum of perovskites and induce n-doping, which is in striking contrast to passivating ions such as potassium and rubidium ion. The discovery of metallic surface doping of perovskites enables new device and material designs that combine the intrinsic interior and heavily doped surface of perovskites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Mg Doped CuCrO2 as Efficient Hole Transport Layers for Organic and Perovskite Solar Cells

The electrical and optical properties of the hole transport layer (HTL) are critical for organic and halide perovskite solar cell (OSC and PSC, respectively) performance. In this work, we studied the effect of Mg doping on CuCrO2 (CCO) nanoparticles and their performance as HTLs in OSCs and PSCs. CCO and Mg doped CCO (Mg:CCO) nanoparticles were hydrothermally synthesized. The nanoparticles were characterized by various experimental techniques to study the effect of Mg doping on structural, chemical, morphological, optical, and electronic properties of CCO. We found that Mg doping increases work function and decreases particle size. We demonstrate CCO and Mg:CCO as efficient HTLs in a variety of OSCs, including the first demonstration of a non-fullerene acceptor bulk heterojunction, and CH3NH3PbI3 PSCs. A small improvement of average short-circuit current density with Mg doping was found in all systems.

14 SOLAR ENERGY↗
DOE OSTI2016

Structural and magnetic studies of tin doped α-Fe{sub 2}O{sub 3} (α-Sn{sub x}Fe{sub 2-x}O{sub 3}) nanoparticles prepared by microwave assisted synthesis

Hematite (α-Fe{sub 2}O{sub 3}) doped with tetravalent ions have potential applications in various fields such as gas sensors, memories, energy storage devices because of their electrical and magnetic properties. Microwave assisted synthesis was used to prepare Tin doped α-Fe{sub 2}O{sub 3} [α-Sn{sub x}Fe{sub 2-x}O{sub 3}]. The structural and morphological studies were investigated using X-ray diffraction (XRD) and Scanning electron microscopy (SEM). XRD patterns revealed that α-Fe{sub 2}O{sub 3} and α-Sn{sub x}Fe{sub 2-x}O{sub 3} were having rhombohedral structure. The compositional study was done by Energy dispersive X-ray Spectroscopy (EDS). The magnetic properties were studied by Vibrating Sample Magnetometry (VSM). Results shows that the prepared samples were found to be antiferromagnetic in nature and the results are discussed in detail.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells

CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl 2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl 3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10 15 cm -3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2017

Thermoelectric properties of the Mg{sub 2}Ge{sub 0.3}Sn{sub 0.7} solid solution with p-type conductivity

The thermoelectric properties of the Mg{sub 2}Ge{sub 0.3}Sn{sub 0.7} solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 10{sup 20} cm{sup –3} are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗