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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Photoelectrochemical performances of n-CdS{sub 1-x}Se{sub x} thin films prepared by spray pyrolysis technique

The CdS{sub 1-x}Se{sub x} (0.0 {<=} x {<=} 1.0) thin films of various compositions have been deposited onto the amorphous and FTO coated glass substrates using a spray pyrolysis technique. An electrode/electrolyte interface has been formed between an n-type CdS{sub 1-x}Se{sub x} (0.0 {<=} x {<=} 1.0) alloyed/mixed type semiconductor and a sulphide/polysulphide redox electrolyte and investigated through the current-voltage, capacitance-voltage and photovoltaic power output characteristics. The dependence of the dark current through the junction and the junction capacitance on the voltage across the junction have been examined and analysed. Upon illumination of the interface with a light of 20 mW/cm{sup 2}, an open-circuit voltage of the order of 335 mV and a short-circuit current of 1.02 mA/cm{sup 2} have been developed (for x = 0.8), which results in energy conversion efficiency and fill factor 0.79% and 0.46% respectively. The magnitudes of the barrier heights at the interfaces have been determined. The significant electrochemical properties have been observed for a cell with electrode composition x = 0.8. (author)

14 SOLAR ENERGY↗
DOE OSTI2020

First-Principles Modeling of Sodium Ion and Water Intercalation into Titanium Disulfide Interlayers for Water Desalination

Recent experiments revealed the possibility of using titanium disulfide (TiS 2 ) as the cathode material in capacitive deionization (CDI) devices for water desalination. Although it performed stably up to 70 cycles with a salt removal capacity of 14 mg/g (corresponding to a sodium ion removal capacity of 35.8 mg/g) at high molar concentration (600 mM NaCl), the maximum capacity of TiS 2 as a CDI electrode was much lower (~70 mAh/g) than as a supercapacitor (239 mAh/g). Understanding why the ion capacities of these two configurations of the same material differ will entail elucidating detailed charge/discharge mechanisms at the atomic scale. Here, we present density functional theory simulations of sodium intercalation into TiS 2 interlayers in order to gain such understanding. We systematically investigated TiS 2 stacking patterns and ion intercalation sites, energetics of the intercalated compounds, and phase transformation during sodium intercalation. The calculated structural evolution and capacitance–voltage curve agree quite well with previous measurements. We conclude that the different maximum capacities of TiS 2 measured in aqueous and dry environments originate from weaker interlayer interactions with respect to shear strain after ~33% intercalation of Na + –H 2 O pairs, which is detrimental to the mechanical stability of TiS 2 . In conclusion, this study sheds light on the underlying mechanisms of ion intercalation into layered materials and contributes to understanding requirements for future design and optimization of CDI electrode materials for water desalination.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Oxygen- and Nitrogen-Enriched 3D Porous Carbon for Supercapacitors of High Volumetric Capacity

Efficient utilization and broader commercialization of alternative energies (e.g., solar, wind, and geothermal) hinges on the performance and cost of energy storage and conversion systems. For now and in the foreseeable future, the combination of rechargeable batteries and electrochemical capacitors remains the most promising option for many energy storage applications. Porous carbonaceous materials have been widely used as an electrode for batteries and supercapacitors. To date, however, the highest specific capacitance of an electrochemical double layer capacitor is only ~200 F/g, although a wide variety of synthetic approaches have been explored in creating optimized porous structures. Here, we report our findings in the synthesis of porous carbon through a simple, one-step process: direct carbonization of kelp in an NH 3 atmosphere at 700 °C. The resulting oxygen- and nitrogen-enriched carbon has a three-dimensional structure with specific surface area greater than 1000 m 2 /g. When evaluated as an electrode for electrochemical double layer capacitors, the porous carbon structure demonstrated excellent volumetric capacitance (>360 F/cm 3 ) with excellent cycling stability. In conclusion, this simple approach to low-cost carbonaceous materials with unique architecture and functionality could be a promising alternative to fabrication of porous carbon structures for many practical applications, including batteries and fuel cells.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Degradation of Ionic Pathway in PEM Fuel Cell Cathode

The degradation of the ionic pathway throughout the catalyst layer in proton exchange membrane fuel cells was studied under an accelerated stress test of catalyst support (potential hold at 1.2 V). Electrochemical behaviors of the cathode based on graphitic mesoporous carbon supported Pt catalyst were examined using electrochemical impedance spectroscopy and cyclic voltammetry. Impedance data were plotted and expressed in the complex capacitance form to determine useful parameters in the transmission line model: the double-layer capacitance, peak frequency, and ionic resistance. Electrochemical surface area and hydrogen crossover current through the membrane were estimated from cyclic voltammogram, while cathode Faradaic resistance was compared with ionic resistance as a function of test time. It was observed that during an accelerated stress test of catalyst support, graphitic mesoporous carbon becomes hydrophilic which increases interfacial area between the ionomer and the catalyst up to 100 h. However, the ionic resistance in the catalyst layer drastically increases after 100 h with further carbon support oxidation. The underlying mechanism has been studied and it was found that significant degradation of ionic pathway throughout the catalyst layer due to catalyst support corrosion induces uneven hydration and mechanical stress in the ionomer.

08 HYDROGEN↗
DOE OSTI2011

Representation of Arctic Mixed-Phase clouds and the Wegener-Bergeron-Findeisen Process in Climate Models: Perspectives from a Cloud-Resolving Study

Two types of Arctic mixed-phase clouds observed during the ISDAC and M-PACE field campaigns are simulated using a 3-dimensional cloud-resolving model (CRM) with size-resolved cloud microphysics. The modeled cloud properties agree reasonably well with aircraft measurements and surface-based retrievals. Cloud properties such as the probability density function (PDF) of vertical velocity (w), cloud liquid and ice, the regime of ice growth at the expense of liquid water (i.e., Wegener-Bergeron-Findeisen (WBF) process), and the inherent relationships among cloud properties/processes in the mixed-phase layers are examined to gain insights for improving the representation of the mixed-phase processes in General Circulation Models (GCMs). We find that, the WBF process only occurs in about 50% of the mixed-phase regime with the vast majority occurring in the downdrafts. In updrafts both liquid and ice grow simultaneously. But in GCMs, it is not necessary to treat the WBF process at the subgrid scale. Our CRM results produce a w distribution well represented by a Gaussian normal function, validating, at least for arctic clouds, the subgrid treatment used in GCMs. Our CRM results also support the assumption frequently used in GCMs that mixed phase clouds maintain water vapor very near liquid saturation. A Gamma function with a fixed variance does not accurately represent the subgrid variability of cloud liquid. The PDFs of cloud liquid and cloud ice can be fitted with Gamma functions, and a normal function can be used for total water, but the variance should not be fixed. The relationship between the ice depositional growth rate and cloud ice strongly depends on the capacitance of ice particles. The assumption for the capacitance of ice particles (e.g., 1.0 for spheres) used in GCMs could lead to a large deviation in ice depositional growth. At large sales, the maximum overlap assumption looks appropriate.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2010

VERY LOW FREQUENCY BREAKDOWN PROPERTIES OF ELECTRICAL INSULATION MATERIALS AT CRYOGENIC TEMPERATURES

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand at tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

cryogenic dielectric↗
DOE OSTI2010

Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2010

Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, by deep level transient spectroscopy (DLTS). The capacitance of a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation of acceptors extending to a depth of {approx}14 {mu}m, which is nearly equal to the epilayer thickness. The value of the capacitance can recover to that of a Schottky contact on as-grown samples after annealing at 1000 deg. C. However, various kinds of defects, IN2 (E{sub C}-0.30 eV), EN (E{sub C}-1.6 eV), IP1 (E{sub V}+0.30 eV), IP2 (E{sub V}+0.39 eV), IP4 (HK0: E{sub V}+0.72 eV), IP5 (E{sub V}+0.85 eV), IP7 (E{sub V}+1.3 eV), and EP (E{sub V}+1.4 eV), remain at a high concentration (average of total defect concentration in the region ranging from 0.3 {mu}m to 1.0 {mu}m:{approx}5x10{sup 14} cm{sup -3}) even after annealing at 1000 deg. C. The concentration of all these defects generated by RIE, except for the IP4 (HK0) center, remarkably decreases by thermal oxidation. In addition, the HK0 center can also be reduced significantly by a subsequent annealing at 1400 deg. C in Ar.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Low-noise, high-speed detector development for optical turbulence fluctuation measurements for NSTX

A new beam emission spectroscopy (BES) diagnostic is under development. Photon-noise limited measurements of neutral beam emissions are achieved using photoconductive photodiodes with a novel frequency-compensated broadband preamplifier. The new BES system includes a next-generation preamplifier and upgraded optical coupling system. Notable features of the design are surface-mount components, minimized stray capacitance, a wide angular acceptance photodiode, a differential output line driver, reduced input capacitance, doubling of the frequency range, net reduced electronic noise, and elimination of the need for a cryogenic cooling system. The irreducible photon noise dominates the noise up to 800 kHz for a typical input power of 60 nW. This new assembly is being integrated into an upgraded multichannel optical detector assembly for a new BES system on the NSTX experiment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Practical solutions for reliable triple probe measurements in magnetized plasmas

The triple probe method to obtain local, time-resolved measurements of density, electron temperature and plasma potential is investigated in detail. The difficulties in obtaining reliable measurements with this technique are discussed and overcome. These include phase delay errors, ion sheath expansion and limited bandwidth due to stray capacitance to ground. In particular, a relatively simple electronic circuit is described to strongly reduce stray capacitance. Measurements with the triple probe are presented in a plasma characterized by interchange-driven turbulence in the TORPEX device. The measured time-averaged and time-dependent, conditionally averaged parameters are cross-checked with other Langmuir probe based techniques, and show good agreement. Triple probe measurements show that electron temperature fluctuations are sufficiently large, such that the identification of plasma potential fluctuations with fluctuations of the floating potential is not a good approximation. Over a large radial region, the time-averaged fluctuation-induced particle flux can, however, be deduced from floating potential only. This is because the phase shift between density and electron temperature is close to zero there and temperature fluctuations do not give rise to a net radial particle transport.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2010

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr{sub 4}

We report on carbon doping of cubic GaN by CBr{sub 4} using plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. The samples consist of a 70 nm thick GaN buffer followed by a 550 nm thick GaN:C layer. Carbon doping is realized with a home-made carbon tetrabromide sublimation source. The CBr{sub 4} beam equivalent pressure was established by a needle valve and was varied between 2x10{sup -9} mbar and 6x10{sup -6} mbar. The growth was controlled by in-situ reflection high energy electron diffraction. The incorporated carbon concentration is obtained from secondary ion mass spectroscopy. Capacitance voltage characteristics were measured using metal-insulator-semiconductor structures. Capacitance voltage measurements on nominally undoped cubic GaN showed n-type conductivity with N{sub D}-N{sub A} = 1x10{sup 17} cm{sup -3}. With increasing CBr{sub 4} flux the conductivity type changes to p-type and for the highest CBr{sub 4} flux N{sub A}-N{sub D} = 4{center_dot}5x10{sup 18} cm{sup -3} was obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Experimental Study on Influence of Process Variables on Crater Dimensions in Micro- EDM of {gamma}-Titanium Aluminide

In the present work the effect of different dielectric mediums in micro-EDM of {gamma}-Titanium Aluminide alloy have been investigated. Experiments were conducted both in the absence (dry conditions) and in presence of dielectric (EDM oil).Circular craters were produced both in the presence and absence of dielectric fluid using varying micro-EDM process variables i.e. open circuit voltage, discharge capacitance, pulse frequency and pulse-on-time. Over cut was measured from optical microscope images using Image Analyzer software. Influences of process variables and optimal conditions for minimum over cut on crater dimensions were investigated. ANOVA test which shows that capacitance of RC circuit contributes significantly in crater formation followed by pulse frequency. Optical photographs exhibit that over cut are less in air medium compared to oil medium.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Influence of annealing temperature on electronic and dielectric properties of ZrO{sub 2} thin films on Si

Zirconium oxide (ZrO{sub 2}) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 Multiplication-Sign 10{sup -2} Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO{sub 2} films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO{sub 2}/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 Multiplication-Sign 10{sup -6} to 4 Multiplication-Sign 10{sup -7} A/cm{sup 2} at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.

36 MATERIALS SCIENCE↗
DOE OSTI2012

The simplest equivalent circuit of a pulsed dielectric barrier discharge and the determination of the gas gap charge transfer

The concept of the simplest equivalent circuit for a dielectric barrier discharge (DBD) is critically reviewed. It is shown that the approach is consistent with experimental data measured either in large-scale sinusoidal-voltage driven or miniature pulse-voltage driven DBDs. An expression for the charge transferred through the gas gap q(t) is obtained with an accurate account for the displacement current and the values of DBD reactor capacitance. This enables (i) the significant reduction of experimental error in the determination of q(t) in pulsed DBDs, (ii) the verification of the classical electrical theory of ozonizers about maximal transferred charge q{sub max}, and (iii) the development of a graphical method for the determination of q{sub max} from charge-voltage characteristics (Q-V plots, often referred as Lissajous figures) measured under pulsed excitation. The method of graphical presentation of q{sub max} is demonstrated with an example of a Q-V plot measured under pulsed excitation. The relations between the discharge current j{sub R}(t), the transferred charge q(t), and the measurable parameters are presented in new forms, which enable the qualitative interpretation of the measured current and voltage waveforms without the knowledge about the value of the dielectric barrier capacitance C{sub d}. Whereas for quantitative evaluation of electrical measurements, the accurate estimation of the C{sub d} is important.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Unusual dielectric response in cobalt doped reduced graphene oxide

Intensive research on cobalt doped reduced graphene oxide (Co-RGO) to investigate the modification in graphene magnetism and spin polarization due to presence of transition metal atom has been carried out, however, its dielectric spectroscopy, particularly, how capacitance changes with impurity levels in graphene is relatively unexplored. In the present work, dielectric spectroscopy along with magneto-dielectric effect are investigated in Co-RGO. Contrary to other materials, here permittivity increases abruptly with frequency in the low frequency region and continues to increase till 10{sup 7} Hz. This unusual behavior is explained on the basis of trap induced capacitance created due to impurity levels.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Superior dielectric properties for template assisted grown (100) oriented Gd{sub 2}O{sub 3} thin films on Si(100)

We report about the single crystalline growth and dielectric properties of Gd{sub 2}O{sub 3}(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd{sub 2}O{sub 3}. Unusually, high dielectric constant values (∼23–27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd{sub 2}O{sub 3}/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗