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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Production of magnetized electron beam from a DC high voltage photogun

Bunched-beam electron cooling is a key feature of all proposed designs of the future electron-ion collider, and a requirement for achieving the highest promised collision luminosity. At the Jefferson Lab Electron Ion Collider (JLEIC), fast cooling of ion beams will be accomplished via so-called 'magnetized cooling' implemented using a recirculator ring that employs an energy recovery linac. In this contribution, we describe the production of magnetized electron beam using a compact 300 kV DC high voltage photogun with an inverted insulator geometry, and using alkali-antimonide photocathodes. Beam magnetization was assessed using a modest diagnostic beamline that includes YAG view screens used to measure the rotation of the electron beamlet passing through a narrow upstream aperture. Magnetization results are presented for different gun bias voltages and for different laser spot sizes at the photocathode, using 532 nm lasers with DC and RF time structure. Photocathode lifetime was measured at currents up to 4.5 mA, with and without beam magnetization.

Al Mamun, Md Abdullah↗
DOE OSTI2015

Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Epitaxial stabilization of ultra thin films of electron doped manganites

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Evolution of electronic structure across the rare-earth RNiO 3 series

Here, the perovksite rare-earth nickelates, RNiO 3 (R = La… Lu), are a class of materials displaying a rich phase-diagram of metallic and insulating phases associated with charge and magnetic order. Being in the charge transfer regime, Ni 3+ in octahedral coordination displays a strong hybridization with oxygen to form 3d-2p mixed states, which results in a strong admixture of 3d 8 L_ into 3d 7 , where L_ denotes a hole on the oxygen. To understand the nature of this strongly hybridized ground state, we present a detailed study of the Ni and O electronic structure using high-resolution soft X-ray absorption spectroscopy (XAS). Through a comparison of the evolution of the XAS line-shape at Ni L- and O K-edges across the phase diagram, we explore the changes in the electronic signatures in connection with the insulating and metallic phases that support the idea of hybridization playing a fundamental role.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Atomically thin chromium triiodide (CrI 3 ) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI 3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). Also, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work shows new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.

2D magnets↗
DOE OSTI2023

Spin canting and lattice symmetry in La 2 CuO 4

While the dominant magnetic interaction in La 2 CuO 4 is superexchange between nearest-neighbor Cu moments, the pinning of the spin direction depends on weak anisotropic effects associated with spin-orbit coupling. The symmetry of the octahedral tilt pattern allows an out-of-plane canting of the Cu spins, which is compensated by an opposite canting in nearest-neighbor layers. A strong magnetic field applied perpendicular to the planes can alter the spin canting pattern to induce a weak ferromagnetic phase. In light of recent evidence that the lattice symmetry is lower than originally assumed, we take another look at the nature of the field-induced spin-rotation transition. Comparing low-temperature neutron diffraction intensities for several magnetic Bragg peaks measured in fields of 0 and 14 T, we find that a better fit is provided by a model in which spins rotate within both neighboring planes but by different amounts, resulting in a noncollinear configuration. Finally, this model allows a more consistent relationship between lattice symmetry and spin orientation at all Cu sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Demonstration of electron spin imbalance in two dimensional electronic states

We have performed the XMCD (x-ray magnetic circular dichroism) measurements on the topological insulator Bi 2 Se 3 with circularly polarized light. The XMCD measurements were performed without voltage, and with a voltage of 5 mV. The measurement with 5 mV shows very different characteristic at Se 2p 3/2 region. This is due to the spin alignment (magnetic moment) on the surface caused by the spin-momentum locking of the moving electrons by the applied voltage. Our data proves that the surfaces of topological insulator could be used potentially for highly spin polarized nonmagnetic materials for spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Nature of superconductor-insulator transition at LaAlO{sub 3}/SrTiO{sub 3} interface

The two-dimensional electron liquid, at the interface between two band insulators LaAlO{sub 3} and SrTiO{sub 3}, exhibits novel, unconventional superconductivity below 200 mK. One of the remarkable properties of the two-dimensional superconductor is its fantastic tunability by external parameters such as gate-voltage or magnetic field. We study the superconductor to insulator transition induced by gate-voltage by employing a self-consistent, mean-field Bogoliubov-de Gennes treatment based on an effective model. We show that the non-monotonic behaviour of the superconductivity with respect to gate-voltage is intrinsically due to the Rashba spin-orbit coupling. With increasing gate-voltage both the electron concentration and Rashba spin-orbit splitting increases. Elevated electron filling boosts superconductivity whereas enhanced spin-orbit splitting annihilates electron-pairing. The non-monotonicity is a result of this competition. The device application of the superconductor-insulator transition in this interface is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Characterization of the lid-driven cavity magnetohydrodynamic flow at finite magnetic Reynolds numbers using far-field magnetic boundary conditions

The lid-driven cavity (LDC) flow is a canonic hydrodynamic problem. In this work, a 3D LDC flow of electrically conducting, incompressible fluid is studied numerically in the presence of a strong magnetic field, which is applied parallel to the lid plane and perpendicular to the direction of the lid motion. The cavity has electrically conducting walls of finite thickness and an infinitely thin moving lid. The problem is characterized by three dimensionless parameters: the Reynolds number ( Re ), the Hartmann number ( Ha ), and the magnetic Reynolds number ( Re m ). The primary research focus is on the effect of Re m , which was changed in the study from Re m $\ll$ 1 to the maximal Re m = 2000 at which dynamo action may be expected, while Ha = 100 and Re = 2000. The computational approach is based on the utilization of far-field magnetic boundary conditions by solving the full magnetohydrodynamic (MHD) flow problem at finite Re m for a multi-material domain composed of the inner conducting liquid, conducting walls, and sufficiently large insulating outer domain called “vacuum” (the induced magnetic field vanishes at the vacuum boundaries) using a fractional-step method. Lastly, the computed results show many interesting features with regard to the effect of Re m on the MHD boundary layer and the bulk flow, generation of a magnetic field and its penetration into vacuum, energy balance, tendency of the magnetic field to become frozen in the fluid and associated magnetic flux expulsion, transition to unsteady flows, and self-excitation of the magnetic field and the associated dynamo-type action at high Re m

42 ENGINEERING↗
DOE OSTI2020

Comprehensive Electrical Control of Metamagnetic Transition of a Quasi-2D Antiferromagnet by In Situ Anisotropic Strain

Effective nonmagnetic control of the spin structure is at the forefront of the study for functional quantum materials. This study demonstrates that, by applying an anisotropic strain up to only 0.05%, the metamagnetic transition field of spin–orbit-coupled Mott insulator Sr 2 IrO 4 can be in situ modulated by almost 300%. Simultaneous measurements of resonant X-ray scattering and transport reveal that this drastic response originates from the complete strain-tuning of the transition between the spin-flop and spin-flip limits, and is always accompanied by large elastoconductance and magnetoconductance. This enables electrically controllable and electronically detectable metamagnetic switching, despite the antiferromagnetic insulating state. The obtained strain-magnetic field phase diagram reveals that C 4 -symmetry-breaking anisotropy is introduced by strain via pseudospin-lattice coupling, directly demonstrating the pseudo-Jahn–Teller effect of spin–orbit-coupled complex oxides. The extracted coupling strength is much weaker than the superexchange interactions, yet crucial for the spontaneous symmetry-breaking, affording the remarkably efficient strain-control.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Strongly correlated and topological states in [111] grown transition metal oxide thin films and heterostructures

We highlight recent advances in the theory, materials fabrication, and experimental characterization of strongly correlated and topological states in [111] oriented transition metal oxide thin films and heterostructures, which are notoriously difficult to realize compared to their [001] oriented counterparts. We focus on two classes of complex oxides, with the chemical formulas ABO 3 and A 2 B 2 O 7 , where the B sites are occupied by an open-shell transition metal ion with a local moment and the A sites are typically a rare earth element. The [111] oriented quasi-two-dimensional lattices derived from these parent compound lattices can exhibit peculiar geometries and symmetries, namely, a buckled honeycomb lattice, as well as kagome and triangular lattices. These lattice motifs form the basis for emergent strongly correlated and topological states expressed in exotic magnetism, various forms of orbital ordering, topological insulators, topological semimetals, quantum anomalous Hall insulators, and quantum spin liquids. For transition metal ions with high atomic number, spin–orbit coupling plays a significant role and may give rise to additional topological features in the electronic band structure and in the spectrum of magnetic excitations. We conclude this perspective by articulating open challenges and opportunities in this actively developing field.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Improvements to the High-Field-Side Transient CHI System on QUEST

Transient coaxial helicity injection (CHI) is a promising candidate for solenoid-free plasma current start-up in a low-aspect-ratio tokamak in support of developing fully non-inductive scenarios. The aim of the transient CHI research on QUEST is to develop a reactor-relevant CHI design. On QUEST, a CHI discharge is initiated by driving current along magnetic field lines that connect an electrically insulated electrode plate (which is referred to as a bias electrode) to a vessel component at the bottom region of the spherical tokamak. In the first application of CHI on QUEST, the electrically insulated electrode plate was biased with respect to the outer vessel in a configuration referred to as low-field-side (LFS) injection. To maintain a narrow injector flux footprint width throughout the discharge, QUEST is now developing a high-field-side (HFS) injection configuration, in which the electrically insulated electrode plate is biased with respect to the inner vessel components. Through the implementation of a CHI-dedicated gas injection system, studies in the HFS injection configuration have now demonstrated good magnetic flux evolution into the vacuum vessel. Toroidal currents up to 43 kA have been achieved, and the generated current has increased in proportion to the magnetic flux connecting the electrodes. Finally, these results which show agreement with the CHI-scaling suggest that much higher levels of toroidal current can be generated on QUEST in an optimized CHI system in which the magnetic flux connecting the CHI electrodes is further increased.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Topological current divider in a Chern insulator junction

A Chern insulator is a two-dimensional material that hosts chiral edge states produced by the combination of topology with time reversal symmetry breaking. Such edge states are perfect one-dimensional conductors, which may exist not only on sample edges, but on any boundary between two materials with distinct topological invariants (or Chern numbers). Engineering of such interfaces is highly desirable due to emerging opportunities of using topological edge states for energy-efficient information transmission. Here, we report a chiral edge-current divider based on Chern insulator junctions formed within the layered topological magnet MnBi 2 Te 4 . We find that in a device containing a boundary between regions of different thickness, topological domains with different Chern numbers can coexist. At the domain boundary, a Chern insulator junction forms, where we identify a chiral edge mode along the junction interface. We use this to construct topological circuits in which the chiral edge current can be split, rerouted, or switched off by controlling the Chern numbers of the individual domains. Our results demonstrate MnBi 2 Te 4 as an emerging platform for topological circuits design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Scanning tunneling microscopy study of epitaxial Fe 3 GeTe 2 monolayers on Bi 2 Te 3

Abstract Introducing magnetism to the surface state of topological insulators, such as Bi 2 Te 3 , can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe 3 GeTe 2 (FGT) that is grown on Bi 2 Te 3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi 2 Te 3 and outwards from Bi 2 Te 3 steps. Atomic resolution imaging shows triangular lattices of 390 ± 10 pm for FGT and 430 ± 10 pm for Bi 2 Te 3 , consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 ± 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignment. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a 3 x 3 R 30 ∘ reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism measurements confirm these thin FGT films are ferromagnetic withT C ∼190 K.

Materials Science↗
DOE OSTI2022

Observation of a linked-loop quantum state in a topological magnet

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids, magnets, the quantum Hall effect, topological insulators, Weyl semimetals and other phenomena. Here we report an unusual linking-number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's three-torus, T 3 , bulk Brillouin zone. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked-loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits the linking number (2, 2, 2), providing a direct determination of the invariant structure from the experimental data. Here we further predict and observe, on the surface of our samples, Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of magnetic and superconducting quantum matter.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe 1-x Cr x O 3 thin films

Here, we report the effect of multivalent Cr-ion doping on the structural, optical, magnetic, and resistive switching properties of BiFe 1-x Cr x O 3 (BFCO) thin films (where, 0 ≤ x ≤ 0.15). BFCO thin films were deposited on Pt/TiO 2 /SiO 2 /Si (100) substrate using pulsed laser deposition technique. X-ray diffraction and micro-Raman analysis revealed the presence of a secondary phase in BFCO thin films, above 5% Cr doping concentrations. Enhanced magnetization was observed in BFCO films owing to ferromagnetic superexchange interaction between Fe and Cr-ions. X-ray photoelectron spectroscopy measurements revealed the multivalent states of Cr and Fe-ions, where suppression of oxygen vacancies due to Cr-ion doping in BFCO films was discussed based on the defect chemistry viewpoint. Moreover, current conduction and resistive switching properties were studied and the dominant switching mechanism was explained in the light of oxygen vacancies assisted filamentary conduction model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗