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At least 1,045 records · Page 58

Tunable giant magnetic anisotropy in amorphous SmCo thin films

SmCo thin films have been grown by magnetron sputtering at room temperature with a composition of 2-35 at. % Sm. Films with 5 at. % or higher Sm are amorphous and smooth. A giant tunable uniaxial in-plane magnetic anisotropy is induced in the films which peaks in the composition range 11-22 at. % Sm. This cross-over behavior is not due to changes in the atomic moments but rather the local configuration changes. The excellent layer perfection combined with highly tunable magnetic properties make these films important for spintronics applications.

36 MATERIALS SCIENCE↗

Preparation and characterization of Ni(111)/graphene/Y{sub 2}O{sub 3}(111) heterostructures

Integration of graphene with other materials by direct growth, i.e., not using mechanical transfer procedures, is investigated on the example of metal/graphene/dielectric heterostructures. Such structures may become useful in spintronics applications using graphene as a spin-filter. Here, we systematically discuss the optimization of synthesis procedures for every layer of the heterostructure and characterize the material by imaging and diffraction methods. 300 nm thick contiguous (111) Ni-films are grown by physical vapor deposition on YSZ(111) or Al{sub 2}O{sub 3}(0001) substrates. Subsequently, chemical vapor deposition growth of graphene in ultra-high vacuum (UHV) is compared to tube-furnace synthesis. Only under UHV conditions, monolayer graphene in registry with Ni(111) has been obtained. In the tube furnace, mono- and bilayer graphene is obtained at growth temperatures of {approx}800 Degree-Sign C, while at 900 Degree-Sign C, non-uniform thick graphene multilayers are formed. Y{sub 2}O{sub 3} films grown by reactive molecular beam epitaxy in UHV covers the graphene/Ni(111) surface uniformly. Annealing to 500 Degree-Sign C results in crystallization of the yttria with a (111) surface orientation.

36 MATERIALS SCIENCE↗

A micro-structured ion-implanted magnonic crystal

We investigate spin-wave propagation in a microstructured magnonic-crystal waveguide fabricated by localized ion implantation. The irradiation caused a periodic variation in the saturation magnetization along the waveguide. As a consequence, the spin-wave transmission spectrum exhibits a set of frequency bands, where spin-wave propagation is suppressed. A weak modification of the saturation magnetization by 7% is sufficient to decrease the spin-wave transmission in the band gaps by a factor of 10. These results evidence the applicability of localized ion implantation for the fabrication of efficient micron- and nano-sized magnonic crystals for magnon spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

36 MATERIALS SCIENCE↗

The bonding, charge distribution, spin ordering, optical, and elastic properties of four MAX phases Cr{sub 2}AX (A = Al or Ge, X = C or N): From density functional theory study

In this work, we assess a full spectrum of properties (chemical bonding, charge distribution, spin ordering, optical, and elastic properties) of Cr{sub 2}AC (A = Al, Ge) and their hypothetical nitride counterparts Cr{sub 2}AN (A = Al, Ge) based on density functional theory calculations. The calculated total energy values indicate that a variety of spin ordering of these four compounds depending on interlayer-interactions between M-A and M-X within the sublattice, which is supported by bonding analysis. MAX phase materials are discovered to possess exotic magnetic properties which indicates that these materials could serve as promising candidates for novel layered magnetic materials for various electronic and spintronic applications. Further analysis of optical properties for two polarization vectors of Cr{sub 2}AX shows that the reflectivity is high in the visible-ultraviolet region up to ∼15 eV suggesting Cr{sub 2}AX as a promising candidate for use as a coating material. The elastic coefficients (C{sub ij}) and bulk mechanical properties [bulk modulus (K), shear modulus (G), Young's modulus (E), Poisson's ratio (η), and Pugh ratio (G/K)] of these four Cr{sub 2}AX compounds are also calculated and analyzed, which pave the way to predict or design new MAX phases that are less brittle or tougher by having a lower G/K value or higher η.

36 MATERIALS SCIENCE↗

Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters

Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DFT structural investigation on Fe(1,10-phenanthroline){sub 2} (NCS){sub 2} spin crossover molecule

Understanding the coupling of spin crossover molecules to metallic surfaces is a key ingredient for harnessing of their remarkable features for future spintronics applications. Here we investigate the structural and electronic properties of deformed Fe(1,10-phenanthroline){sub 2} (NCS){sub 2} molecules, mimicking the possible effects arising from the interaction with a metallic substrate. We find a relatively large structural flexibility for this molecule, accompanied by small changes in their total energy. This suggests that the spin crossover activity can be modulated by the interaction with the substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetic resonance investigation of Zn{sub 1−x}Fe{sub x}O properties influenced by annealing atmosphere

ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe{sup 3+} ions in Zn{sub 1−x}Fe{sub x}O powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature.

36 MATERIALS SCIENCE↗

Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study

This work presents results for the electronic structure, magnetic properties, and electrical resistivity of the semiconductor SnTe doped with 3d transition metals V and Cr. From the standpoint of potential application in spintronics, we look for half-metallic states and analyze their properties in both rock salt and zinc blende structures using ab initio electronic structure methods. In both cases, it is the Sn-sublattice that is doped with the transition metals, as has been the case with experiments performed so far. We find four half-metallic compounds at their optimized cell volumes. Results of exchange interactions and the Curie temperature are presented and analyzed for all the relevant cases. Resistivity calculation based on Kubo-Greenwood formalism shows that the resistivities of these alloys due to transition metal doping of the Sn-sublattice may vary, in most cases, from typical liquid metal or metallic glass value to 2–3 times higher. 25% V-doping of the Sn-sublattice in the rock salt structure gives a very high resistivity, which can be traced to high values of the lattice parameter resulting in drastically reduced hopping or diffusivity of the states at the Fermi level.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Vortex precession frequency and its amplitude-dependent shift in cylindrical nanomagnets

Frequency of free magnetic vortex precession in circular soft ferromagnetic nano-cylinders (magnetic dots) of various sizes is an important parameter, used in design of spintronic devices (such as spin-torque microwave nano-oscillators) and characterization of magnetic nanostructures. Here, using a recently developed collective-variable approach to non-linear dynamics of magnetic textures in planar nano-magnets, this frequency and its amplitude-dependent shift are computed analytically and plotted for the full range of cylinder geometries. The frequency shift is positive in large planar dots, but becomes negative in smaller and more elongated ones. At certain dot dimensions, a zero frequency shift is realized, which can be important for enhancing frequency stability of magnetic nano-oscillators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3} shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

36 MATERIALS SCIENCE↗

Interacting spins and holes in zigzag edge nanographene

We have investigated charge and spin gap properties of zigzag edge graphene nanoribbons (ZGNRs) modeled within Hubbard Hamiltonian with onsite electron-electron interaction using semi-empirical many-body configuration interaction (CI) method. The charge gap behavior resembles the mean-field results, showing minima near Dirac point. We have observed unprecedented gap-less spin excitations over the flat band region. Moreover, doping the ZGNRs with holes reduces both the charge and spin gaps, inducing metallic and magnetic behavior, which can be exploited to fabricate spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strain-induced reduction of surface roughness dominated spin relaxation in MOSFETs

Semiconductor spintronics is a rapidly developing field with large impact on microelectronics. Using spin may help to reduce power consumption and increase computational speed. Silicon is perfectly suited for spin-based applications. It is characterized by a weak spin-orbit interaction which should result in a long spin lifetime. However, recent experiments indicate the lifetime is greatly reduced in gated structures. Thus, understanding the peculiarities of the spin-orbit effects on the subband structure and details of the spin propagation in surface layers and thin silicon films is urgently needed. We investigate the contribution of the spin-orbit interaction to the equivalent valley splitting and calculate the spin relaxation matrix elements by using a perturbative k ⋅p approach. We demonstrate that applying uniaxial stress along the [110] direction may considerably suppress electron spin relaxation in silicon surface layers and thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

g-factor anisotropy in nanowire-based InAs quantum dots

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks

We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures, we observe very high DW velocities (600 m/s) at current densities below 10{sup 7} A/cm{sup 2}. We show that the efficient spin-transfer torque combined with a short propagation distance allows avoiding the Walker breakdown process and achieving deterministic, reversible, and fast (≈1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest for the implementation of fast DW-based spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tailoring the energy level alignment at the Co/Alq{sub 3} interface by controlled cobalt oxidation

We have studied the influence of oxygen exposure at the prototypical interface between cobalt and the organic semiconductor tris(8-hydroxyquinoline)aluminum (III) (Alq{sub 3}) by photoemission spectroscopy. We find that oxidation of the cobalt leads to a gradual suppression of hybrid interface states, to a progressive change in the work function and to a continuous energetic shift of the molecular orbitals towards higher binding energies. Based on these observations, we propose controlled oxidation of the ferromagnetic electrode as an easy and effective possibility to tune the performance of organic spintronics devices.

36 MATERIALS SCIENCE↗

Intensive two-photon absorption induced decay pathway in a ZnO crystal: Impact of light-induced defect state

Using the pump-probe with phase object technique with 20 ps laser pulses at 532 nm, we investigated the carrier relaxation process subsequent to two-photon absorption (TPA) in ZnO. As a result, we found that an additional subnanosecond decay pathway is activated when the pump beam intensity surpasses 0.4 GW/cm{sup 2}. We attributed this intensity-dependent pathway to a TPA induced bulk defect state and our results demonstrate that this photo induced defect state has potential applications in ZnO based optoelectronic and spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

36 MATERIALS SCIENCE↗