Search NASA⌕ Search

SEARCH · Search NASA

Results for “Capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R{sub C}) and access resistance (R{sub A}). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f{sub T}) after doping, as compared to ∼23% f{sub T} improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R{sub C} on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R{sub A} for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V} + 0.47 eV, E{sub V} + 0.35 eV, and E{sub V} + 0.16 eV are observed in all films with concentrations in the range of 10{sup 15}–10{sup 18} cm{sup −3}. The two shallowest traps at E{sub V} + 0.35 eV and E{sub V} + 0.16 eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite

Manganese (Mn) substituted cobalt ferrites (CoFe{sub 2-x}Mn{sub x}O{sub 4}, referred to CFMO) have been synthesized by the solid state reaction method and their dielectric properties and ac conductivity have been evaluated as a function of applied frequency and temperature. X-ray diffraction measurements indicate that CFMO crystallize in the inverse cubic spinel phase with a lattice constant ∼8.38 Å. Frequency dependent dielectric measurements at room temperature obey the modified Debye model with relaxation time of 10{sup −4} s and spreading factor of 0.35(±0.05). The frequency (20 Hz–1 MHz) and temperature (T = 300–900 K) dependent dielectric constant analyses indicate that CFMO exhibit two dielectric relaxations at lower frequencies (1–10 kHz), while completely single dielectric relaxation for higher frequencies (100 kHz–1 MHz). The dielectric constant of CFMO is T-independent up to ∼400 K, at which point increasing trend prevails. The dielectric constant increase with T > 400 K is explained through impedance spectroscopy assuming a two-layer model, where low-resistive grains separated from each other by high-resistive grain boundaries. Following this model, the two electrical responses in impedance formalism are attributed to the grain and grain-boundary effects, respectively, which also satisfactorily accounts for the two dielectric relaxations. The capacitance of the bulk of the grain determined from impedance analyses is ∼10 pF, which remains constant with T, while the grain-boundary capacitance increases up to ∼3.5 nF with increasing T. The tan δ (loss tangent)-T also reveals the typical behavior of relaxation losses in CFMO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fabrication of NiO thin film electrode for supercapacitor applications

Nanocrystalline NiO electrode is successfully electrosynthesized for supercapacitor application. The nanocrystalline NiO electrode is characterized using scanning electron microscope (SEM). Nickel oxide is a highly porous and the film surface looked smooth and composed of fine elongated particles. The supercapacitive performance of NiO electrode is tested using cyclic voltammetry (C-V) technique in 0.5M Na{sub 2}S{sub 2}O{sub 3} electrolyte within potential range of −1.2 to +1.2 V. The effect of scan rate on the capacitance of NiO electrode is studied. The highest specific capacitance of 439 Fg{sup −1} at the voltage scan rate of 50mVs{sup −1} is achieved. Additionally stability and charging–discharging of NiO electrode are studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

AC-magnetotransport of a 2DEG in the quantum Hall regime

In this paper we present an ac-magneto-transport study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, for frequencies in the range [100Hz, 1MHz]. We present a new approach to understand admittance measurements based in the Landauer-Buttiker formalism for QHE edge channels and taking into account the capacitance and the topology of the cables connected to the contacts used in the measurements. Our model predicts an universal behavior with the a-dimensional parameter RCω where R is the 2 wires resistance of the 2DEG, C the capacitance cables and the angular frequency, in agreement with experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq{sub 3}/MoO{sub 3} and MoO{sub 3} composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO{sub 3} layer. Moreover, Mg:Alq{sub 3}/MoO{sub 3} composed device displays a photovoltaic effect and the V{sub oc} shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrical characterization and an equivalent circuit model of a microhollow cathode discharge reactor

This paper reports the electrical characterization and an equivalent circuit of a microhollow cathode discharge (MHCD) reactor in the self-pulsing regime. A MHCD reactor was prototyped for air plasma generation, and its current-voltage characteristics were measured experimentally in the self-pulsing regime for applied voltages from 2000 to 3000 V. The reactor was modeled as a capacitor in parallel with a variable resistor. A stray capacitance was also introduced to the circuit model to represent the capacitance of the circuit elements in the experimental setup. The values of the resistor and capacitors were recovered from experimental data, and the proposed circuit model was validated with independent experiments. Experimental data showed that increasing the applied voltage increased the current, self-pulsing frequency and average power consumption of the reactor, while it decreased the peak voltage. The maximum and the minimum voltages obtained using the model were in agreement with the experimental data within 2.5%, whereas the differences between peak current values were less than 1%. At all applied voltages, the equivalent circuit model was able to accurately represent the peak and average power consumption as well as the self-pulsing frequency within the experimental uncertainty. Although the results shown in this paper was for atmospheric air pressures, the proposed equivalent circuit model of the MHCD reactor could be generalized for other gases at different pressures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 μm square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Towards a graphene-based quantum impedance standard

Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus measured with alternating current were found to be flat within one part in 10{sup 7}. This is much better than for plain GaAs quantum Hall devices and shows that the magnetic-flux-dependent capacitive ac losses of the graphene device are less critical. The observed frequency dependence of about −8 × 10{sup −8}/kHz is comparable in absolute value to the positive frequency dependence of plain GaAs devices, but the negative sign is attributed to stray capacitances which we believe can be minimized by a careful design of the graphene device. Further improvements thus may lead to a simpler and more user-friendly quantum standard for both resistance and impedance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Defect density and dielectric constant in perovskite solar cells

We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH{sub 3}NH{sub 3}PbI{sub x}Cl{sub 1−x} perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66 eV below the conduction band and one at 0.24 eV below the conduction band. The attempt to escape frequency is in the range of 2 × 10{sup 11}/s. Quantum efficiency data indicate a bandgap of 1.58 eV. Urbach energies of valence and conduction band are estimated to be ∼16 and ∼18 meV. Measurement of saturation capacitance indicates that the relative dielectric constant is ∼18.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments

In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of curvature on the device physics of thin film transistors on flexible substrates

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Combined effects of Bi deficiency and Mn substitution on the structural transformation and functionality of BiFeO{sub 3} films

Mn-doped BiFeO{sub 3} films with Mn contents of 5 and 10 mol. % were prepared via a chemical route. A carefully controlled amount of Bi deficiency was introduced to further tune the lattice structure and the functionality of multiferroic BiFeO{sub 3}. The crystal structure of Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was investigated by X-ray diffraction and Raman spectra; a rhombohedral-to-orthorhombic phase transition was revealed. The observed double hysteresis loops and two capacitance maxima from polarization vs electric field and capacitance-voltage measurements indicate an antiferroelectric-like behavior. Additionally, the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases in Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was revealed from the domain structures obtained by piezoelectric force microscopy. The effects of Mn substitution in conjunction with Bi deficiency on the FE-AFE phase transition and electrical behavior of BiFeO{sub 3} films are discussed in detail. Meanwhile, magnetic and photoluminescence measurements on the films illustrate that Mn substitution gives rise to the net magnetic moment and the defects induced by both Bi deficiency and Mn substitution influence the electronic structure of BiFeO{sub 3} films. This study thus shows a simple and effective way to control the functionalities of BiFeO{sub 3} films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Reduced electrical impedance of SiO{sub 2}, deposited through focused ion beam based systems, due to impurity percolation

The electrical impedance (both the resistive and capacitive aspects) of focused ion beam (FIB) deposited SiO{sub 2} has been correlated to the specific composition of the ion beam, in Ga- and Xe-based FIB systems. The presence of electrically percolating Ga in concert with carbon (inevitably found as the product of the hydrocarbon precursor decomposition) has been isolated as a major cause for the observed decrease in the resistivity of the deposited SiO{sub 2}. Concomitant with the decreased resistivity, an increased capacitance and effective dielectric constant was observed. Our study would be useful to understand the constraints to the deposition of high quality insulator films through FIB based methodologies.

36 MATERIALS SCIENCE↗