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At least 1,063 records · Page 59

Status of NTD Ge bolometer material and devices

The first IR Detector Technology Workshop took place at NASA Ames Research Center on July 12 and 13, 1983. The conclusions presented at that meeting are still valid. More was learned about the physics of hopping conduction at very low temperatures which will be important for bolometer design and operation at ever decreasing temperatures. Resistivity measurements were extended down to 50 mK. At such low temperatures, precise knowledge of the neutron capture cross sections sigma (sub n) of the various Ge isotopes is critical if one is to make an accurate prediction of the dopant concentrations and compensation, and therefore resistivity, that will result from a given irradiation. An empirical approach for obtaining the desired resistivity material is described and the process of conducting a set of experiments which will improve the knowledge of the effective sigma (sub n) values for a given location in a particular reactor is discussed. A wider range of NTD Ge samples is now available. Noise measurements on bolometers with ion implanted contacts show the no 1/f noise component appears down to 1 Hz and probably lower.

Haller, E. E.↗

Magnetic and microwave properties of U-type hexaferrite films with high remanence and low ferromagnetic resonance linewidth

U-type barium hexaferrite films (Ba{sub 4}Ni{sub 1.4}Co{sub 0.6}Fe{sub 36}O{sub 60}) were deposited on (0001) sapphire substrates by pulsed laser deposition. Microstructure and magnetic properties of the films were characterized by X-ray diffraction, scanning electron microscopy and vibrating sample magnetometry. Ferromagnetic resonance (FMR) measurements were performed at X-band. The results indicate an anisotropy field of ∼8 kOe, and the saturation magnetization (4πM{sub s}) of ∼3.6 kG. An optimal post-deposition annealing of films results in a strong (0 0 n) crystallographic texture and a high hysteresis loop squareness (M{sub r}/M{sub s} = 92%) leading to self biased properties. Furthermore, the highly self-biased ferrite films exhibited an FMR linewidth of ∼200 Oe. The U-type hexaferrite films having low microwave loss, low magnetic anisotropy field, and high squareness are a suitable alternative to Sc or In doped BaM ferrites that have been the choice material for self-biased microwave devices at X-band frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Monte Carlo simulation of shielding designs for a cabinet form factor preclinical MV–energy photon FLASH radiotherapy system

Purpose: A preclinical MV-energy photon FLASH radiotherapy system is being designed at Stanford and SLAC National Accelerator Laboratory. Because of the higher energy and dose rate compared to conventional kV-energy photon laboratory-scale irradiators, adequate shielding in a stand-alone cabinet form factor is more challenging to achieve. We present a Monte Carlo simulation of multilayered shielding for a compact self-shielding system without the need for a radiation therapy vault. Methods: A multilayered shielding approach using multiple alternating layers of high-Z and low-Z materials is applied to the self-shielded cabinet to effectively mitigate the secondary radiation produced and to allow the device to be housed in a Controlled Radiation Area outside of a radiation vault. The multilayered shielding approach takes advantage of the properties of high-Z and low-Z radiation shielding materials such as density, cross-section, atomic number of the shielding elements, and products of radiation interactions within each layer. The Monte Carlo radiation transport code, FLUKA, is used to simulate the total effective dose produced by the operation. Results: The multilayered shielding designs proposed and simulated produced effective dose rates significantly lower than monolayer designs with the same total material thickness at the regulatory boundary; this is accomplished through the manipulation of the locations where secondary radiation is produced and reactions due to material properties such as neutron back reflection in hydrogen. Borated polyethylene at 5 wt% significantly increased the shielding performance as compared to regular polyethylene, with the magnitude of the reduction depending upon the order of the shielding material. Conclusions: The multilayered shielding provides a path for shielding preclinical FLASH systems that deliver MV-energy bremsstrahlung photons. Furthermore, this approach promises to be more efficient with respect to the shielding material mass and space claim as compared to shielded vaults typically required for clinical radiation therapy with MV photons.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Photostability Can Be Significantly Modulated by Molecular Packing in Glasses

While previous work has demonstrated that molecular packing in organic crystals can strongly influence photochemical stability, efforts to tune photostability in amorphous materials have shown much smaller effects. Here we show that physical vapor deposition can substantially improve the photostability of organic glasses. Disperse Orange 37 (DO37), an azobenzene derivative, is studied as a model system. Photostability is assessed through changes in the density and molecular orientation of glassy thin films during light irradiation. By optimizing the substrate temperature used for deposition, we can increase photostability by a factor of 50 relative to the liquid-cooled glass. Photostability correlates with glass density, with density increases of up to 1.3%. Coarse-grained molecular simulations, which mimic glass preparation and the photoisomerization reaction, also indicate that glasses with higher density have substantially increased photostability. These results provide insights that may assist in the design of organic photovoltaics and light emission devices with longer lifetimes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Trapping in irradiated p + -n-n - silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 x 10 15 neq/cm 2 . Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. Furthermore, the effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Photostability can be significantly modulated by molecular packing in glasses

While previous work has demonstrated that molecular packing in organic crystals can strongly influence photochemical stability, efforts to tune photostability in amorphous materials have shown much smaller effects. Here we show that physical vapor deposition can substantially improve the photostability of organic glasses. Disperse Orange 37 (DO37), an azobenzene derivative, is studied as a model system. Photostability is assessed through changes in the density and molecular orientation of glassy thin films during light irradiation. By optimizing the substrate temperature used for deposition, we can increase photostability by a factor of 50 relative to the liquid-cooled glass. Photostability correlates with glass density, with density increases of up to 1.3%. Coarse-grained molecular simulations, which mimic glass preparation and the photoisomerization reaction, also indicate that glasses with higher density have substantially increased photostability. These results provide insights that may assist in the design of organic photovoltaics and light emission devices with longer lifetimes.

36 MATERIALS SCIENCE↗

Plasma Emission, Wave Speeds, and Temperatures of Laser-Supported Plasmas in Air

A study of the generation and subsequent expansion of plasmas using a single beam (532 nm) from the second harmonic generator of a Q-switched Nd:YAG laser is described. The plasmas in air are studied using an intensified charge-coupled device camera over periods of 1000 ns following the laser pulses. The plasma experimental results are interpreted in terms of wave speeds and plasma temperatures. Energy balance equations are considered to estimate the plasma temperatures and the laser-supported radiation (LSR) and the laser-supported detonation (LSD) wave speeds. Within 1000 ns observation time, the circular spectral images turn elliptical because of plasma expansion toward the laser beam. The plasma expansion increases with increasing laser irradiance. A laser irradiance range of [Formula: see text] yields LSR wave speeds between 45 and 170 km/s and LSD wave speeds of 90–130 km/s. The measured wave speeds are compared with the LSR and the LSR wave speed models. The plasma temperatures are between 90,000 and 120,000 K at 15 ns after the laser pulse based on measured emission spectra and are between 640,000 and 760,000 K at 3 ns based on the LSR model.

Engineering↗

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.

42 ENGINEERING↗

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗

End-to-end test of spatial accuracy in Gamma Knife treatments for trigeminal neuralgia

Purpose: Spatial accuracy is most crucial when small targets like the trigeminal nerve are treated. Although current quality assurance procedures typically verify that individual apparatus, like the MRI scanner, CT scanner, Gamma Knife, etc., are meeting specifications, the cumulative error of all equipment and procedures combined may exceed safe margins. This study uses an end-to-end approach to assess the overall targeting errors that may have occurred in individual patients previously treated for trigeminal neuralgia. Methods: The trigeminal nerve is simulated by a 3 mm long, 3.175 mm (1/8 in.) diameter MRI-contrast filled cavity embedded within a PMMA plastic capsule. The capsule is positioned within the head frame such that the location of the cavity matches the Gamma Knife coordinates of an arbitrarily chosen, previously treated patient. Gafchromic EBT2 film is placed at the center of the cavity in coronal and sagittal orientations. The films are marked with a pinprick to identify the cavity center. Treatments are planned for radiation delivery with 4 mm collimators according to MRI and CT scans using the clinical localizer boxes and acquisition protocols. Shots are planned so that the 50% isodose surface encompasses the cavity. Following irradiation, the films are scanned and analyzed. Targeting errors are defined as the distance between the pinprick, which represents the intended target, and the centroid of the 50% isodose line, which is the center of the radiation field that was actually delivered. Results: Averaged over ten patient simulations, targeting errors along the x, y, and z coordinates (patient’s left-to-right, posterior-to-anterior, and head-to-foot) were, respectively, −0.060 ± 0.363, −0.350 ± 0.253, and 0.348 ± 0.204 mm when MRI was used for treatment planning. Planning according to CT exhibited generally smaller errors, namely, 0.109 ± 0.167, −0.191 ± 0.144, and 0.211 ± 0.094 mm. The largest errors along individual axes in MRI- and CT-planned treatments were, respectively, −0.761 mm in the y-direction and 0.428 mm in the x-direction, well within safe limits. Conclusions: The highly accurate dose delivery was possible because the Gamma Knife, MRI scanner, and other equipment performed within tight limits and scans were acquired using the thinnest slices and smallest pixel sizes available. Had the individual devices performed only near the limits of their specifications, the cumulative error could have left parts of the trigeminal nerve undertreated. The presented end-to-end test gives assurance that patients had received the expected high quality treatment. End-to-end tests should become part of clinical practice.

60 APPLIED LIFE SCIENCES↗

Utilizing Ultraviolet Photons to Generate Single-Photon Emitters in Semiconductor Monolayers

The understanding and controlled creation of atomic defects in semiconductor transition metal dichalcogenides (TMDs) are highly relevant to their applications in high-performance quantum optics and nanoelectronic devices. Here, we demonstrate a versatile approach in generating single-photon emitters in MoS 2 monolayers using widely attainable UV light. We discover that only defects engendered by UV photons in vacuum exhibit single-photon-emitter characteristics, whereas those created in air lack quantum emission attributes. In combination with theoretical calculations, we assign the defects generated in vacuum to unpassivated sulfur vacancies, whose highly localized midgap states give rise to single-photon emission. In contrast, UV irradiation of the MoS 2 monolayers in air results in oxygen-passivated sulfur vacancies, whose optical properties are likely governed by their pristine band-to-defect band optical transitions. Furthermore, these findings suggest that widely available light sources such as UV light can be utilized for creating quantum photon sources in TMDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

TU-H-209-00: Planning and Delivering HDR APBI Treatments

Learnings Objectives: Although brachytherapy is the oldest form of radiation therapy, the rapid advancement of the methods of dose calculation, treatment planning and treatment delivery pushes us to keep updating our knowledge and experience to new procedures all the time. Our purpose is to present the newest applicators used in Accelerated Partial Breast Irradiation (APBI) and the techniques of using them for a maximum effective treatment. Our objective will be to get the user familiar with the Savi, Contura and ML Mammosite from the detailed description and measurements to cavity eval and choice or size, to acceptance tests and use of each. At the end of the session the attendants will be able to assist at the scanning of the patient for the first treatment, decide on the proper localization and immobilization devices, import the scans in the treatment planning system, perform the structure segmentation, reconstruct the catheters and develop a treatment plan using inverse planning (IPSA) or volume optimization. The attendant should be able to evaluate the quality of a treatment plan according to the ABS protocols and B39 after this session. Our goal is that all the attendants to gain knowledge of all the quality assurance procedures required to be performed prior to a treatment, at the beginning of a treatment day, weekly, monthly and annualy on the remote afterloader, the treatment planning system and the secondary check system. We will provide tips for a consistent treatment delivery of the 10 fractions in a BID (twice daily) regimen.

60 APPLIED LIFE SCIENCES↗

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

Patterson, Richard L.↗

Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

36 MATERIALS SCIENCE↗

Investigating Sintering Mechanisms for Additive Manufacturing of Conductive Traces

Additive Manufacturing (AM) processes enable the fabrication of miniaturized and flexible devices on complex geometries. This paper explores a hybrid additive manufacturing technology that integrates micro-extrusion and PICO-jetting methods. Conductive slurries and colloidal inks were optimized for their rheological properties to aid their precise deposition. A variety of conductive materials which include carbon, silver, nano-particle silver and nickel were deposited on both rigid (glass) and flexible (Kapton) substrates. The deposited traces were cured using two sintering mechanisms which include furnace heating and in situ laser irradiation. The effect of curing mechanism on the conductance of deposited traces was evaluated. The results indicated that traces could be cured successfully with the laser curing mechanism. Nickel and silver laser cured traces had lower resistivity than the furnace sintered traces. An increase in the laser power resulted in lower resistivity of the traces. The lowest resistivity was achieved at 40W laser power with a single laser pass. Scanning electron microscopy and energy dispersive spectroscopy were used to characterize the trace morphology and elemental compositions. Higher power laser curing resulted in better bonding of the particles. Laser cured samples had minimal oxidation to the cross-section region of the traces as compared to furnace cured samples. Furthermore, this research lays the foundation for the fabrication of electronic components for a high level of freeform 3D electronics using a hybrid additive manufacturing technology.

42 ENGINEERING↗

Evaluation of gamma-ray transmission through rectangular collimator slits for application in nuclear fuel spectrometry

Gamma-ray spectrometry is widely applied in several science fields, and in particular in non-destructive gamma scanning and gamma emission tomography of irradiated nuclear fuel. Usually, a collimator is used in the experimental setup, to selectively interrogate a region of interest in the fuel. For the optimization of instrument design, as well as for planning measurement campaigns, predictive models for the transmitted gamma-ray intensity through the collimator are needed. Commonly, Monte Carlo Radiation Transport tools are used for accurate prediction of gamma-ray transport, however, the long computation time requirements when used in low-efficiency experimental setups present challenges. Here, the full-energy peak intensity transmitted through a rectangular collimator slit was examined. A uniform planar surface source emitting isotropically was considered, and the rate of photons reaching an ideal counter plane on the opposite side of the collimator was evaluated by analytical integration. To find a closed-form primitive function, some idealizations were required, and thereby parametric models were obtained for the optical field of view, dependent on slit dimensions (length, height and width) and source-to-collimator distance. For contributions from outside the optical field of view, where a closed-form expression cannot be found, fast numerical integral methods were instead used. The results were validated using the Monte Carlo code MCNP6 and show an agreement within three percent for the numerical method. For the analytical method, deviations up to tens of percent were obtained, which is deemed to still be sufficient for instrument design and measurement planning, where often the order of magnitude of the count rate is not a priori known. The method is planned for use in iterative optimization routines in the design of Gamma Emission Tomography devices, as well as for the prediction of gamma spectra obtained in the planning of fuel inspections. An application of the proposed method was demonstrated in spectrum prediction for a short cooling-time fuel rod test from the Halden reactor.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Developing the science and technology for the Material Plasma Exposure eXperiment

Linear plasma generators are cost effective facilities to simulate divertor plasma conditions of present and future fusion reactors. They are used to address important R&D gaps in the science of plasma material interactions and towards viable plasma facing components for fusion reactors. Next generation plasma generators have to be able to access the plasma conditions expected on the divertor targets in ITER and future devices. The steady-state linear plasma device MPEX will address this regime with electron temperatures of 1–10 eV and electron densities of $10^{21}{\text{}}\!-\!10^{20}$ ${\rm m}^{-3}$. The resulting heat fluxes are about 10 MW ${\rm m}^{-2}$ . MPEX is designed to deliver those plasma conditions with a novel Radio Frequency plasma source able to produce high density plasmas and heat electron and ions separately with electron Bernstein wave (EBW) heating and ion cyclotron resonance heating with a total installed power of 800 kW. The linear device Proto-MPEX, forerunner of MPEX consisting of 12 water-cooled copper coils, has been operational since May 2014. Its helicon antenna (100 kW, 13.56 MHz) and EC heating systems (200 kW, 28 GHz) have been commissioned and 14 MW ${\rm m}^{-2}$ was delivered on target. Furthermore, electron temperatures of about 20 eV have been achieved in combined helicon and ECH heating schemes at low electron densities. Overdense heating with EBW was achieved at low heating powers. The operational space of the density production by the helicon antenna was pushed up to $1.1 \times 10^{20}$ ${\rm m}^{-3}$ at high magnetic fields of 1.0 T at the target. Finally, the experimental results from Proto-MPEX will be used for code validation to enable predictions of the source and heating performance for MPEX. MPEX, in its last phase, will be capable to expose neutron-irradiated samples. In this concept, targets will be irradiated in ORNL's High Flux Isotope Reactor and then subsequently exposed to fusion reactor relevant plasmas in MPEX.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗