Chemistry of K in Cu(In,Ga)Se 2 photovoltaic absorbers: Effects of temperature on Cu-K-In-Se films
Incorporation of K has led to world record Cu(In,Ga)Se 2 photovoltaic power conversion efficiencies, but there is poor consensus about the role of phase impurities in these advances. This work lays a foundation for identifying and controlling these phase impurities. Films of Cu-K-In-Se were co-evaporated at varied K/(K + Cu) compositions and substrate temperatures (with constant (K + Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to favor Cu 1-x K x InSe 2 alloy formation, relative to two-phase CuInSe 2 +KInSe 2 formation. Structures from X-ray diffraction (XRD), band gaps, resistivities, minority carrier lifetimes and carrier concentrations from time-resolved photoluminescence were in agreement with previous reports, where low K/(K + Cu) composition films exhibited properties promising for photovoltaic absorbers. Films grown at 400-500 °C were then annealed to 600 degrees C in a controlled Se ambient, which caused K loss by evaporation in proportion to the initial K/(K + Cu) composition. Similar to growth temperature, annealing drove Cu 1-x K x InSe 2 alloy consumption and CuInSe 2 +KInSe 2 production, as evidenced by high temperature XRD. Annealing also decomposed KInSe 2 and formed K 2 In 12 Se 19 . At high temperature, the KInSe 2 crystal lattice gradually contracted as temperature and time increased, as well as just time. Evaporative loss of K during annealing could accompany the generation of vacancies on K lattice sites, and may explain the KInSe 2 lattice contraction. As a result, this knowledge of Cu-K-In-Se material chemistry may be used to predict and control minor phase impurities in Cu(In,Ga)(Se,S) 2 photovoltaic absorbers - where impurities below typical detection limits may have played a role in recent world record photovoltaic efficiencies that utilized KF post-deposition treatments.