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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Single-event upset in highly scaled commercial silicon-on-insulator PowerPc microprocessors

Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.

single event upset (SEU)↗
NASA NTRS2008

GSFC Technical Outreach: The Capitol College Model

In February 2005, as part of the National Aeronautic and Space Administration (NASA) Technical Outreach Program, Goddard Space Flight Center (GSFC) awarded Capitol College of Laurel, Maryland an Educational Grant to establish a Space Operation academic curriculum to meet the future needs of mission operations engineers. This was in part due to the aerospace industry and GSFC concerns that a large number of professional engineers are projected to retire in the near term with evidence showing that current enrollment in engineering schools will not produce sufficient number of space operation trained engineers that will meet industry and government demands. Capitol College, under the agreement of the Educational Grant, established the Space Operations Institute (SOI) with a new curriculum in Space Operations that was approved and certified by the State of Maryland. The SO1 programs focuses on attracting, recruiting, and training a pipeline of highly qualified engineers with experience in mission operations, system engineering and development. The selected students are integrated as members of the engineering support team in any of the missions supported by the institute. The students are mentored by professional engineers from several aerospace companies that support GSFC. Initially, the institute was involved in providing console engineers and mission planning trainees for the Upper Atmosphere Research Satellite (UARS), the Earth Radiation Budget Satellite (ERBS) and the Total Ozone Mapping Spectrometer mission (TOMS). Subsequently, the students were also involved in the technology refresh of the TOMS ground system and other mission operations development. Further mission assignment by GSFC management included participation in the Tropical Rainfall Measuring Mission (TRMM) mission operations and ground system technology refresh. The SOI program has been very successful. Since October 2005, sixty-four students have been enrolled in the SOI program and twenty-five have already graduated from the program, nineteen of whom are employed by company's supporting GSFC. Due to the success of the program, the initial grant period was extended for another period of two years. This paper presents the process that established the SOI as a viable pipeline of mission operations engineers, the lessons learned in the process of dealing with grants, and experience gained in mentoring engineering students that are responsible for particular areas of expertise and functionality. This paper can also be considered a case study and model for integrating a student team with government and industry professionals in the real world of mission operations.

Marius, Julio L.↗
NASA NTRS2006

Four-Quadrant Analog Multipliers Using G4-FETs

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Mojarradi, Mohammad↗
NASA NTRS2005

Making Wide-IF SIS Mixers with Suspended Metal-Beam Leads

A process that employs silicon-on-insulator (SOI) substrates and silicon (Si) micromachining has been devised for fabricating wide-intermediate-frequency-band (wide-IF) superconductor/insulator/superconductor (SIS) mixer devices that result in suspended gold beam leads used for radio-frequency grounding. The mixers are formed on 25- m-thick silicon membranes. They are designed to operate in the 200 to 300 GHz frequency band, wherein wide-IF receivers for tropospheric- chemistry and astrophysical investigations are necessary. The fabrication process can be divided into three sections: 1. The front-side process, in which SIS devices with beam leads are formed on a SOI wafer; 2. The backside process, in which the SOI wafer is wax-mounted onto a carrier wafer, then thinned, then partitioned into individual devices; and 3. The release process, in which the individual devices are separated using a lithographic dicing technique. The total thickness of the starting 4-in. (10.16-cm)-diameter SOI wafer includes 25 m for the Si device layer, 0.5 m for the buried oxide (BOX) layer, and 350 m the for Si-handle layer. The front-side process begins with deposition of an etch-stop layer of SiO2 or AlN(x), followed by deposition of a Nb/Al- AlN(x) /Nb trilayer in a load-locked DC magnetron sputtering system. The lithography for four of a total of five layers is performed in a commercial wafer-stepping apparatus. Diagnostic test dies are patterned concurrently at certain locations on the wafer, alongside the mixer devices, using a different mask set. The conventional, self-aligned lift-off process is used to pattern the SIS devices up to the wire level.

Kaul, Anupama↗
NASA NTRS2010

A National Partnership-Based Summer Learning Initiative to Engage Underrepresented Students with Science, Technology, Engineering and Mathematics

In response to the White House Educate to Innovate campaign, NASA developed a new science, technology, engineering, and mathematics (STEM) education program for non-traditional audiences that also focused on public-private partnerships and nationwide participation. NASA recognized that summer break is an often overlooked but opportune time to engage youth in STEM experiences, and elevated its ongoing commitment to the cultivation of diversity. The Summer of Innovation (SoI) is the resulting initiative that uses NASA's unique missions and resources to boost summer learning, particularly for students who are underrepresented, underserved and underperforming in STEM. The SoI pilot, launched in June 2010, is a multi-faceted effort designed to improve STEM teaching and learning through partnership, multi-week summer learning programs, special events, a national concluding event, and teacher development. The SoI pilot features strategic infusion of NASA content and educational resource materials, sustainability through STEM Learning Communities, and assessments of effectiveness of SoI interventions with other pilot efforts. This paper examines the inception and development of the Summer of Innovation pilot project, including achievements and effectiveness, as well as lessons learned for future efforts.

Melvin, Leland↗
NASA NTRS2003

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Yang, Eui-Hyeok↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
DOE OSTI2021

Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction

There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin–orbit interaction (SOI), large difference between in-dot-plane and out-of-dot-plane g-factors, i.e. g-factor anisotropy, and a significantly reduced hyperfine coupling to nuclei in the host material. These attributes collectively can deliver fast all-electric coherent spin manipulation, efficient spin-flip inter-dot tunneling channels, a voltage tunable effective g-factor, a g-factor adjustable to nearly zero in an appropriately oriented external magnetic field, and long spin relaxation and coherence times. In this work, we review our recent work on the physics of heavy holes confined in a planar GaAs/AlGaAs double quantum dot system with strong SOI. For a single-hole, we have performed resonant tunneling magneto-spectroscopy to extract spin-flip and spin-conserving tunneling strengths, implemented spin-flip Landau–Zener–Stückelberg–Majorana (LZSM) interferometry, determined the spin relaxation time T 1 as a function of magnetic field using a fast single-shot latched charge technique, electrically tuned the effective g-factor revealed by electric dipole spin resonance, and found signatures of the hyperfine interaction and dynamic nuclear polarization with holes. For two-holes, we have measured the energy spectrum in the presence of strong SOI (and so not limited by Pauli spin blockade), quantified the heavy-hole (HH) g-factor anisotropy on tilting the magnetic field, described a scheme to employ HHs whose g-factor is tunable to nearly zero for an in-plane magnetic field for a coherent photon-to-spin interface, and observed a well-defined LZSM interference pattern at small magnetic fields on pulsing through the singlet-triplet anti-crossing.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Deep learning categorization of infrasound array data

Here we develop a deep learning-based infrasonic detection and categorization methodology that uses convolutional neural networks with self-attention layers to identify stationary and non-stationary signals in infrasound array processing results. Using features extracted from the coherence and direction-of-arrival information from beamforming at different infrasound arrays, our model more reliably detects signals compared with raw waveform data. Using three infrasound stations maintained as part of the International Monitoring System, we construct an analyst-reviewed data set for model training and evaluation. We construct models using a 4-category framework, a generalized noise vs non-noise detection scheme, and a signal-of-interest (SOI) categorization framework that merges short duration stationary and non-stationary categories into a single SOI category. We evaluate these models using a combination of k-fold cross-validation, comparison with an existing “state-of-the-art” detector, and a transportability analysis. Although results are mixed in distinguishing stationary and non-stationary short duration signals, f-scores for the noise vs non-noise and SOI analyses are consistently above 0.96, implying that deep learning-based infrasonic categorization is a highly accurate means of identifying signals-of-interest in infrasonic data records.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Report Series: Evaluation, Finding of Effect, and Mitigation Documentation for the Main Gate (23-GS100), Mercury, Area 23, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE) National Nuclear Security Administration Nevada Field Office (NNSA/NFO) plans to replace the existing guard shack at the Main Gate (23-GS100, Nevada State Historic Preservation Office [SHPO] Resource No. S1758) to the Nevada National Security Site (NNSS) in Nye County, Nevada. The purpose of the project is to improve security. The project is considered an undertaking subject to review under Title 54 of United States Code (USC) § 306108, commonly known as Section 106 of the National Historic Preservation Act, Title 54 USC § 300101, et seq., and its implementing regulations, Title 36 of the Code of Federal Regulations (36 CFR) Part 800. In 2018, Desert Research Institute (DRI) completed an architectural survey of the town of Mercury. This effort resulted in the identification, recordation, and evaluation of the Mercury Historic District (MHD, SHPO Resource No. D230), including the identification of its contributing elements (Reno et al. 2018). The MHD was recommended eligible for listing in the National Register of Historic Places (NRHP, National Register) under the Secretary of the Interior’s (SOI) Significance Criteria A and C, as defined in 36 CFR Part 60.4, as a significant concentration of buildings and structures with a direct and important association with Cold War-era nuclear testing from 1951 through 1992. It has not been evaluated under Criteria B and D to date. As part of a larger modernization program for Mercury, the NNSA/NFO and the SHPO executed the 2018 Programmatic Agreement between the National Nuclear Security Administration Nevada Field Office and the Nevada State Historic Preservation Officer regarding Modernization and Operational Maintenance of the Nevada National Security Site, at Mercury in Nye County, Nevada (Mercury PA). The Mercury PA includes streamlined Section 106 procedures for undertakings in the MHD based on contributing element categories. The Main Gate is identified in Appendix C of the Mercury PA as a Category I contributing element, indicating that it might be individually eligible for the NRHP. It is a historic property for the purposes of Section 106 compliance and subject to the stipulations of the Mercury PA. Per Stipulation VI of the Mercury PA, when the Area of Potential Effect (APE) for an undertaking includes Category I elements, the NNSA/NFO must evaluate the Category I elements for individual NRHP eligibility under all of the SOI Significance Criteria, prior to initiating any activity that may affect the elements. Thus, the purpose of this report is to evaluate the Main Gate as a potential individually eligible historic property in fulfillment of Stipulation VI of the Mercury PA. The evaluation detailed herein concludes that the Main Gate is individually eligible for listing in the NRHP under SOI Significance Criterion A at the national level of significance for its direct, important association with Cold War-era nuclear testing from 1965 (the date the current Main Gate was constructed) through 1992 (when critical nuclear testing on the NNSS ceased).

23-GS100↗
DOE OSTI2022

Report Series: Evaluation, Finding Of Effect, And Mitigation Documentation For Building 23-109, Mercury, Area 23, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE) National Nuclear Security Administration Nevada Field Office (NNSA/NFO) plans to demolish Building 23-109, the Mercury Fire Station/Maintenance/Housing Office (Nevada State Historic Preservation Office [SHPO] Resource No. B15235) at the Nevada National Security Site (NNSS) in Nye County, Nevada. The NNSA/NFO is implementing a long-term project to modernize the town of Mercury for future mission needs. The project is considered an undertaking subject to review under Title 54 of United States Code (USC) § 306108, commonly known as Section 106 of the National Historic Preservation Act, Title 54 USC § 300101, et seq., and its implementing regulations, Title 36 of the Code of Federal Regulations (36 CFR) Part 800. In 2018, Desert Research Institute (DRI) completed an architectural survey of the town of Mercury. This effort resulted in the identification, recordation, and evaluation of the Mercury Historic District (MHD, SHPO Resource No. D230), including the identification of its contributing elements (Reno et al. 2018). The MHD was recommended eligible for listing in the National Register of Historic Places (NRHP, National Register) under the Secretary of the Interior’s (SOI) Significance Criteria A and C, as defined in 36 CFR Part 60.4, as a significant concentration of buildings and structures with a direct and important association with Cold War-era nuclear testing from 1951 through 1992. It has not been evaluated under Criteria B and D to date. As part of a larger modernization program for Mercury, the NNSA/NFO and the SHPO executed the 2018 Programmatic Agreement between the National Nuclear Security Administration Nevada Field Office and the Nevada State Historic Preservation Officer regarding Modernization and Operational Maintenance of the Nevada National Security Site, at Mercury in Nye County, Nevada (Mercury PA). The Mercury PA includes streamlined Section 106 procedures for undertakings in the MHD based on contributing element categories. Building 23-109 is identified in Appendix C of the Mercury PA as a Category I contributing element, indicating that it might be individually eligible for the NRHP. It is a historic property for the purposes of Section 106 compliance and subject to the stipulations of the Mercury PA. Per Stipulation VI of the Mercury PA, when the Area of Potential Effect (APE) for an undertaking includes Category I elements, the NNSA/NFO must evaluate the Category I elements for individual NRHP eligibility under all of the SOI Significance Criteria prior to initiating any activity that may affect the elements. The purpose of this report is to evaluate Building 23-109 as a potential individually eligible historic property in fulfillment of Stipulation VI of the Mercury PA. The evaluation detailed herein concludes that Building 23-109 is not individually eligible for listing in the NRHP. Although it retains some aspects of integrity and continues to contribute to the MHD, it is not individually significant under any of the SOI Significance Criteria.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

Evaluation of Building 23-620, Los Alamos Scientific Laboratory J-3 Office, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE) National Nuclear Security Administration Nevada Field Office (NNSA/NFO) plans to demolish Building 23-620, the Los Alamos Scientific Laboratory (LASL) J-3 Office Building (Nevada State Historic Preservation Office [SHPO] Resource No. B15283) at the Nevada National Security Site (NNSS) in Nye County, Nevada. The NNSA/NFO is implementing a long-term project to modernize the town of Mercury for future mission needs. The project is considered an undertaking subject to review under Title 54 of United States Code (USC) § 306108, commonly known as Section 106 of the National Historic Preservation Act, Title 54 USC § 300101, et seq., and its implementing regulations, Title 36 of the Code of Federal Regulations (36 CFR) Part 800. In 2018, Desert Research Institute (DRI) completed an architectural survey of the town of Mercury. This effort resulted in the identification, recordation, and evaluation of the Mercury Historic District (MHD, SHPO Resource No. D230), including the identification of its contributing elements (Reno et al. 2018). The MHD was recommended eligible for listing in the National Register of Historic Places (NRHP, National Register) under the Secretary of the Interior’s (SOI) Significance Criteria A and C, as defined in 36 CFR Part 60.4, as a significant concentration of buildings and structures with a direct and important association with Cold War-era nuclear testing from 1951 through 1992. It has not been evaluated under Criteria B and D to date. As part of a larger modernization program for Mercury, the NNSA/NFO and the SHPO executed the 2018 Programmatic Agreement between the National Nuclear Security Administration Nevada Field Office and the Nevada State Historic Preservation Officer regarding Modernization and Operational Maintenance of the Nevada National Security Site, at Mercury in Nye County, Nevada (Mercury PA). The Mercury PA includes streamlined Section 106 procedures for undertakings in the MHD based on contributing element categories. Building 23-620 is identified in Appendix C of the Mercury PA as a Category I contributing element, indicating that it might be individually eligible for the NRHP. It is a historic property for the purposes of Section 106 compliance and subject to the stipulations of the Mercury PA. Per Stipulation VI of the Mercury PA, when the Area of Potential Effect (APE) for an undertaking includes Category I elements, the NNSA/NFO must evaluate the Category I elements for individual NRHP eligibility under all of the SOI Significance Criteria prior to initiating any activity that may affect the elements. The purpose of this report is to evaluate Building 23-620 as a potential individually eligible historic property in fulfillment of Stipulation VI of the Mercury PA. The evaluation detailed herein concludes that Building 23-620 is not individually eligible for listing in the NRHP. Although it retains aspects of integrity and continues to contribute to the MHD, it is not individually significant under any of the SOI Significance Criteria.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

Evaluation of Building 23-702, Los Alamos Scientific Laboratory H-8 Foil Handling Building, Mercury, Area 23, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE) National Nuclear Security Administration Nevada Field Office (NNSA/NFO) plans to demolish Building 23-702, the Los Alamos Scientific Laboratory (LASL) H-8 Foil Handling Building (Nevada State Historic Preservation Office [SHPO] Resource No. B15278) at the Nevada National Security Site (NNSS) in Nye County, Nevada. The NNSA/NFO is implementing a long-term project to modernize the town of Mercury for future mission needs. The project is considered an undertaking subject to review under Title 54 of United States Code (USC) § 306108, commonly known as Section 106 of the National Historic Preservation Act, Title 54 USC § 300101, et seq., and its implementing regulations, Title 36 of the Code of Federal Regulations (36 CFR) Part 800. In 2018, Desert Research Institute (DRI) completed an architectural survey of the town of Mercury. This effort resulted in the identification, recordation, and evaluation of the Mercury Historic District (MHD, SHPO Resource No. D230), including the identification of its contributing elements (Reno et al. 2018). The MHD was recommended eligible for listing in the National Register of Historic Places (NRHP, National Register) under the Secretary of the Interior’s (SOI) Significance Criteria A and C, as defined in 36 CFR Part 60.4, as a significant concentration of buildings and structures with a direct and important association with Cold War-era nuclear testing from 1951 through 1992. As part of the modernization program for Mercury, the NNSA/NFO and the SHPO executed the 2018 Programmatic Agreement Between the National Nuclear Security Administration Nevada Field Office and the Nevada State Historic Preservation Officer Regarding Modernization and Operational Maintenance of the Nevada National Security Site, at Mercury in Nye County, Nevada (Mercury PA). The Mercury PA includes streamlined Section 106 procedures for undertakings in the MHD based on contributing element categories. Building 23-702 is identified in Appendix C of the Mercury PA as a Category I contributing element, indicating that it might be individually eligible for the NRHP. It is a historic property for the purposes of Section 106 compliance and subject to the stipulations of the Mercury PA. Per Stipulation VI of the Mercury PA, when the Area of Potential Effect (APE) for an undertaking includes Category I elements, the NNSA/NFO must evaluate the Category I elements for individual NRHP eligibility under all of the SOI Significance Criteria prior to initiating any activity that may affect the elements. The purpose of this report is to evaluate Building 23-702 as a potential individually eligible historic property in fulfillment of Stipulation VI of the Mercury PA. The evaluation detailed herein concludes that Building 23-702 is not individually eligible for listing in the NRHP. Although it retains aspects of integrity and continues to contribute to the MHD, it is not individually significant under any of the SOI Significance Criteria.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

High Linearity RF Circuits in CMOS Platforms (CRADA Final Report)

The goal of this CRADA was to understand high linearity silicon-on-insulator (SOI) radio frequency switches. The first direction investigated was high linearity RF mixers as these components are composed of a network of switches. During the course of the investigation, it was determined that while the SOI RF switches were effective in the application in mixers and produced state of the art performance, the use of SOI for mixers is not economically feasible because the technology only worked with advanced CMOS nodes <65nm which can have an NRE cost (from lithography masks) in excess of $\$$500,000.

42 ENGINEERING↗
DOE OSTI2021

Particle Matter Index and Fuel Wall-wetting Relations on Stochastic Pre-ignition

This works explores the effect of the particle matter index (PMI) and aromatic content on fuel wall impingement and associated stochastic pre-ignition (SPI) propensity. Statically significant measurements of SPI rates are directly coupled with laser induced florescence (LIF) measurements of fuel dilution from spray-linear impingement. Literature suggests that PMI is could be correlated with the number of SPI events, but the root cause(s) of PMI and SPI are directly causational or are a predicator of SPI. Three fuels have been used in this study with 3 different PMI and two different aromatic contents. These fuels are direct injected at two different injection timings, an earlier injection timing which targets the piston crown, 310°CA bTDC, and a later injection timing that the linear, 220°CA bTDC start of injection timings (SOI) respectively. The earlier 310 SOI injection increases soot, whereas the later 220°CD SOI targets the linear and increases wall-wetting. The findings of this work highlight that the SPI activity has a weak correlation with the soot promoted by the combustion process and increased PMI. However, SPI activity shows a strong dependency with high levels of oil dilution and aromatic content, suggesting that PMI might be an indicator of fuel chemistry conducive to SPI and the soot form increased PMI fuels is not a strong source of SPI relative to fuel wall wetting.

42 ENGINEERING↗
DOE OSTI2023

Performance, Combustion and Emissions Evaluation of Liquid Phase Port-Injected LPG on a Single Cylinder Heavy-Duty Spark Ignited Engine

Liquefied petroleum gas (LPG), like many other alternative fuels, has witnessed increased adoption in the last decade, and its use is projected to rise as stricter emissions regulations continue to be applied. However, much of its use is limited to dual fuel applications, gaseous phase injection, light-duty passenger vehicle applications, or scenarios that require conversion from gasoline engines. Therefore, to address these limitations and discover the most efficient means of harnessing its full potential, more research is required in the development of optimized fuel injection equipment for liquid port and direct injection, along with the implementation of advanced combustion strategies that will improve its thermal efficiency to the levels of conventional fuels. This paper focuses on the development of a liquid phase port-injection system for LPG, the design of a reference piston, and the baseline evaluation of the performance, combustion, and emissions characteristics of a single cylinder research engine to establish a benchmark comparable to existing LPG engines. A sweep of start of injection (SOI) timing is performed by injecting liquid LPG at several closed and open intake valve timings, which demonstrates no significant variation in engine performance, but accounts for a 10% reduction in bsCO with the optimal SOI timing. Spark timing sweep demonstrates the 50% burn crank angle location related to maximum brake torque (MBT) point with a brake thermal efficiency (BTE) of ~34% for the tested load case. The effect of equivalence ratio is also presented with optimal SOI timing at MBT condition. The engine starts exhibiting knocking combustion at 140kPa intake manifold air pressure (IMAP) with a peak torque of 253Nm and a 5% reduction in brake specific fuel consumption compared to the naturally aspirated scenario.

Fosudo, Toluwalase↗
NASA NTRS1984

Empirical studies of upper atmospheric species

The first month of spin-scan ozone imaging (SOI) data (October 1981) was processed and compared with total ozone mapping spectrometer and ground based data. Short term variations in the ozone field have been revealed using animated sequences of SOI data. High correlations were observed between SOI ozone and upper tropospheric meteorological data. The relationship between ozone and temperature in the stratosphere was investigated by examining Nimbus 4 backscattered ultraviolet ozone and selective chopper radiometer temperature measurements as well as solar Nimbus 7 solar backscattered ultraviolet ozone and stratospheric and mesospheric sounder temperature measurements. Results from these ozone temperature studies were compared with calculations from theoretical 2-D models. All of the lims infrared monitor of the stratosphere data was processed at 10 pressure levels and correlations between various species have been performed. The Venus Atmospheric Drag model was modified taking into account recent investigations on the Venus thermosphere and the resulting model was considered for incorporation into the Venus International Reference Atmosphere.

Nicholson, J.↗