Search NASA⌕ Search

SEARCH · Search NASA

Results for “ANNEALING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Relationship between microstructure evolution and properties enhancement of carbon nanotubes‐filled polybutylene terephthalate/polypropylene blends induced by thermal annealing

Abstract Thermal annealing induced microstructure evolution and properties enhancement of polybutylene terephthalate/polypropylene/carbon nanotubes (PBT/PP/CNTs) nanocomposites was methodically investigated. The electrical conductive PBT/PP/CNTs nanocomposites with a low percolation threshold were obtained by simple melt blending due to the selective location of the CNTs in PBT phase and the formation of the double percolation structure. Thermal annealing further remarkably decreased the volume resistivity of the nanocomposites, with the maximum reduction of seven orders of magnitude. Scanning electron microscope observation and rheology tests demonstrated that the relatively large CNTs agglomerates were redistributed to build more homogeneous CNTs networks after annealing. The phase coalescence during annealing promoted the formation of the more perfect co‐continuous structure. These phenomena helped to enhance the electrical conductivity of the nanocomposites. Flexural properties of the nanocomposites were also enhanced after annealing, which might be due to the more effective stress transfer between the polymer and CNTs induced by the reconstructed CNTs networks. The nanocomposites obtained in this study possess excellent electrical and mechanical properties, which can be applied to the fields of sensors, electromagnetic interference shielding, anti‐static materials, and so forth.

Shang, Mengyao↗
DOE OSTI2020

Modification of magnetic ground state in Tb 2 Ni 0.90 Si 2.94 by thermal annealing

In this work, we have investigated the thermal annealing effect on the physical properties of an AlB 2 -type ternary intermetallic compound, Tb 2 Ni 0.90 Si 2.94 , that undergoes spin freezing behaviour coexisting with spatially limited antiferromagnetic phase below 9.9 K in as-cast form. Thermal annealing effect is found to result in considerable changes in the magnetic ground state properties of the system. Though only one magnetic transition around 9.9 K is observed for as-cast compound, the annealed sample exhibits two distinct magnetic transitions; one around T N ~ 13.5 K and another around T f ~ 4 K. The magnetization measurements and zero field neutron diffraction study reveal that the high temperature transition is antiferromagnetic type, though of limited correlation length, while the low temperature transition corresponds to spin freezing behaviour. The ac susceptibility and heat capacity studies also confirm the existence of frustrated cluster glass state at lower temperature than the antiferromagnetic ordering temperature. Additionally, ac susceptibility data exhibits signature of an additional peak in the even lower temperature region (at 2.2 K for zero frequency) that tends to shift in opposite direction with frequency in contrast to that observed for conventional glassy transitions. The change in intrinsic local structural disorder of Ni and Si ions associated with annealing has been argued to be responsible for the different magnetic behaviour in as-cast and annealed samples.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Development of rare-earth-free bulk magnets with energy product up to 12 MGOe in field annealed Mn–Bi–Mg–In–Sb alloys

A treatment consisting of annealing in a moderately strong, ≤30 kOe, magnetic field was applied to arc-melted ingots and compacted melt-spun alloys with composition Mn 50 Bi 50-x-y-z Mg x In y Sb z . The high degree of texture of the magnetic α phase induced with annealing of the ingot samples (except the Mn–Bi–Sb one) allowed for accurate determination of the phase anisotropy field. Alloying was found to increase the anisotropy field from 45 kOe in the Mn 50 Bi 50 alloy to 65 kOe in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 alloy. In the compacted melt-spun alloys subjected to field annealing, a higher degree of texture could be achieved after compaction which had involved less heating, when a smaller fraction of the metastable β' phase had been converted into the α phase; compaction at room temperature allowed for the highest degree of texture in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 magnet. The addition of indium was found to decrease the solidus temperatures of the alloys, facilitating the development of the α phase during the field annealing and modifying the properties of the resulting magnets. Introduction of indium resulted in a higher coercivity H c of the Mn–Bi–Mg–In magnets and in a better texture of the Mn–Bi–Mg–Sn–In magnets. The former effect allowed, in particular, for a viable maximum energy product ( BH ) max of 10 MGOe to be developed in the Mn 50 Bi 46.5 Mg 3 In 0.5 magnet through annealing in a relatively low field of 15 kOe, whereas the latter effect allowed for an excellent combination of ( BH ) max = 11.6 MGOe and H c = 8.5 kOe in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 magnet. The highest ( BH ) max of 12 MGOe was realized in the Mn 50 Bi 46 Mg 3 In 0.5 Sb 0.5 magnet.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Austenite formation and cementite dissolution during intercritical annealing of a medium-manganese steel from a martensitic condition

In the present study, in situ high-energy X-ray diffraction (HEXRD), dilatometry, and metallography were conducted for the purpose of understanding microstructure evolution during intercritical annealing of a Fe-0.19C-4.39Mn steel from a martensitic initial condition. Three different simulations for austenite growth and solute partitioning during isothermal holding were conducted using the DICTRA™ module of Thermo-Calc®. The microstructures after intercritical annealing exhibit film-like retained austenite; however, in situ HEXRD indicates that retained austenite in the initial martensitic microstructure had decomposed upon heating to the isothermal holding temperature, suggesting that film-like austenite may be generated during intercritical annealing via nucleation and growth of new austenite and without necessarily preserving initial retained austenite films in the martensitic microstructure. Metallography and in situ HEXRD also indicate that cementite had formed upon heating but did not readily dissolve during an 1800 s isothermal hold although considerable growth of austenite had occurred during the isothermal hold, suggesting that austenite nucleation and initial growth during intercritical annealing does not solely occur due to carbon partitioning. A simulation incorporating cementite suggests that the increase in austenite fraction during intercritical annealing initially occurs in association with Mn partitioning followed by austenite growth induced by gradual cementite dissolution.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tailoring the Magnetic and Hyperthermic Properties of Biphase Iron Oxide Nanocubes through Post-Annealing

Tailoring the magnetic properties of iron oxide nanosystems is essential to expanding their biomedical applications. In this study, 34 nm iron oxide nanocubes with two phases consisting of Fe3O4 and α-Fe2O3 were annealed for 2 h in the presence of O2, N2, He, and Ar to tune the respective phase volume fractions and control their magnetic properties. X-ray diffraction and magnetic measurements were carried out post-treatment to evaluate changes in the treated samples compared to the as-prepared samples, showing an enhancement of the α-Fe2O3 phase in the samples annealed with O2 while the others indicated a Fe3O4 enhancement. Furthermore, the latter samples indicated enhancements in crystallinity and saturation magnetization, while coercivity enhancements were the most significant in samples annealed with O2, resulting in the highest specific absorption rates (of up to 1000 W/g) in all the applied fields of 800, 600, and 400 Oe in agar during magnetic hyperthermia measurements. The general enhancement of the specific absorption rate post-annealing underscores the importance of the annealing atmosphere in the enhancement of the magnetic and structural properties of nanostructures.

Crystallography↗
NASA NTRS1972

Superconducting properties of annealed Nb-Al-Ge thin films.

Discussion of the superconducting transition temperature and other superconducting properties of annealed Nb-Al-Ge thin films which were prepared by sputtering from a 3Nb-0.8Al-0.2Ge cathode. Annealing was performed in a high-vacuum environment maintained at 10 to the minus 9th torr or less, for times and temperatures near the optimum conditions for bulk Nb-Al-Ge. Films with transition temperatures from 12 to 16 K were annealed and in all cases a rise in transition temperature was observed, with the maximum value obtained thus far being 17.5 K. The current carrying capacity values, already substantially higher for unannealed thin films than for the bulk, were raised even further in the annealed samples, indicating that annealing has no detrimental effects on the flux pinning in these films.

Janocko, M. A.↗
NASA NTRS1979

Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

Weinberg, I.↗
NASA NTRS1979

Annealing kinetics of electron-irradiated GaAs heteroface solar cells in the range 175-200 C

Annealing of electron-irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 10 to the 15th 1-MeV electrons/sq cm followed by thermal annealing. An activation energy for annealing of 1.25 + or - 0.14 eV and a frequency factor of (3.7 + or - 1.9) x 10 to the 9th per sec were determined. A small component of the irradiation damage which does not anneal measurably at 200 C was observed.

Walker, G. H.↗
NASA NTRS1981

Reduced annealing temperatures in silicon solar cells

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Weinberg, I.↗
NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1986

Effect of multiple strain-anneal cycles on the 1000 C creep behaviour of gamma/gamma prime-alpha

Various multiple strain-anneal cycles (1000 C) were imposed on specimens of the directionally solidified eutectic (DSE) alloy gamma/gamma prime-alpha to identify thermomechanical processing methods (TMP) which would improve the creep behavior. Specimens of the Ni-32.3Mo-6.3Al wt pct alloy were grown with a modified Bridgeman technique. Some of the cylindrical specimens were alternately heat-treated at 900 C, then strained, or heat-treated only, while other specimens were annealed at 900 C after swaging and then worked at ambient temperature. The specimens were all examined microstructurally using transmission electron microscopy, some before and after being exposed to constant-load compression tests at 1000 C. The creep strain increased for all TMP specimens for strain rates of at least 2 millionths per sec. Strain rates of about 2 ten millionths per sec were only improved with strain annealing with 13 percent work at ambient temperature. A slight improvement, compared to as-grown materials, was observed in the 1000 C creep behavior of materials annealed at 900 C. Strain-annealing was found to introduce three-dimensional dislocation networks into the gamma-prime matrix.

Whittenberger, J. D.↗
NASA NTRS1988

Annealing results on low-energy proton-irradiated GaAs solar cells

AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

Kachare, R.↗
NASA NTRS1989

Thermal annealing of GaAs concentrator solar cells

The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

Curtis, H. B.↗
NASA NTRS1991

Thermal annealing of GaAs concentrator solar cells

Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

Curtis, H. B.↗
NASA NTRS1990

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Michael, Sherif↗
NASA NTRS1994

Annealing temperature and O2 partial pressure dependence of T(sub c) in HgBa2CuO(4+delta)

Samples of HgBa2CuO(4+delta) (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (T(sub a)) and O2 partial pressure (P(sub 0)), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260 C less than or equal to T(sub a) less than or equal to 400 C, the obtained T(sub c) is nearly the same (approximately 97 K). However, it decreases quickly with T(sub a) greater than 300 C in high vacuum (P(sub 0) approximately 10(exp -8) atm), and reaches zero at T(sub a) = 400 C. On the other hand, T(sub c) decreases with the decrease of T(sub a) in high-pressure O2 (approximately 500 atm) and reaches approximately 20 K at about 240 C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of T(sub c) variation (0 goes to 97 K goes to 20 K) was obtained with anion doping alone.

Xiong, Q.↗
NASA NTRS1996

Surface Chemistry, Friction, and Wear Properties of Untreated and Laser-Annealed Surfaces of Pulsed-Laser-Deposited WS(sub 2) Coatings

An investigation was conducted to examine the surface chemistry, friction, and wear behavior of untreated and annealed tungsten disulfide (WS2) coatings in sliding contact with a 6-mm-diameter 440C stainless-steel ball. The WS2 coatings and annealing were performed using the pulsed-laser-deposition technique. All sliding friction experiments were conducted with a load of 0.98 N (100 g), an average Hertzian contact pressure of 0.44 GPa, and a constant rotating speed of 120 rpm. The sliding velocity ranged from 31 to 107 mm/s because of the range of wear track radii involved in the experiments. The experiment was performed at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7X(exp -10) Pa), dry nitrogen (relative humidity, less than 1 percent), and humid air (relative humidity, 15 to 40 percent). Analytical techniques, including scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), x-ray photo electron spectroscopy (XPS), surface profilometry, and Vickers hardness testing, were used to characterize the tribological surfaces of WS2 coatings. The results of the investigation indicate that the laser annealing decreased the wear of a WS2 coating in an ultrahigh vacuum. The wear rate was reduced by a factor of 30. Thus, the laser annealing increased the wear life and resistance of the WS2 coating. The annealed WS 2 coating had a low coefficient of friction (less than O.1) and a low wear rate ((10(exp -7) mm(exp 3)/N-m)) both of which are favorable in an ultrahigh vacuum.

Miyoshi, Kazuhisa↗
NASA NTRS2001

Annealing of Solar Cells and Other Thin Film Devices

Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

Escobar, Hector↗