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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)

Here, we present the results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide. We utilized the local density approximation potential of Ceperley and Alder, as parameterized by Vosko and his group, the linear combination of Gaussian orbitals formalism, and the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF), in carrying out our completely self-consistent calculations. With this method, the results of our calculations have the full, physical content of density functional theory (DFT). Our results include electronic energy bands, densities of states, effective masses, and the bulk modulus. Our calculated, indirect band gap of 1.48 eV, from C to a conduction band minimum close to X, for the room temperature lattice constant of 4.777 Å, is in an excellent agreement with the experimental value of 1.46 6 0.02 eV. We thor-oughly explain the reasons for the excellent agreement between our findings and corresponding, experimental ones. This work provides a confirmation of the capability of DFT to describe accu-rately properties of materials, provides a confirmation of the capability of DFT to describe accu-rately properties of materials, if the computations adhere strictly to the conditions of validity of DFT, as done by the BZW-EF method.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Impurity-derived p -type conductivity in cubic boron arsenide

Cubic boron arsenide (c-BAs) exhibits an ultrahigh thermal conductivity (κ) approaching 1300 Wm -1 K -1 at room temperature. However, c-BAs is believed to incorporate high concentrations of crystal imperfections that can both quench κ and act as sources of unintentional p-type conductivity. Although this behavior has been attributed to native defects, we show here, using optical and magnetic resonance spectroscopies together with first-principles calculations, that unintentional acceptor impurities such as silicon and/or carbon are more likely candidates for causing the observed conductivity. These results also clarify that the true low-temperature bandgap of c-BAs is 0.3 eV higher than the widely reported value of ~1.5 eV. Low-temperature photoluminescence measurements of c-BAs crystals reveal impurity-related recombination processes (including donor-acceptor pair recombination), and electron paramagnetic resonance experiments show evidence for effective mass-like shallow acceptors. Our hybrid density functional calculations indicate that native defects are incapable of giving rise to such signals. Instead, we find that group-IV impurities readily incorporate on the As site and act as shallow acceptors. Finally, such impurities can dominate the electrical properties of c-BAs, and their influence on phonon scattering must be considered when optimizing thermal conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections

We describe the fundamental electronic and optical properties of the high-thermal-conductivity III–V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We discover that the fundamental bandgap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate the carrier effective masses and report smaller values for the holes than the electrons, indicating higher hole mobility and easier p-type doping. The small difference between the static and high frequency dielectric constants suggests that BAs is only weakly ionic. We also observe that the imaginary part of the dielectric function exhibits a strong absorption peak, which corresponds to parallel bands in the band structure. Our estimated exciton binding energy of 43 meV indicates that excitons are relatively stable against thermal dissociation at room temperature. Our work gives theoretical insights into the fundamental electronic properties of BAs to guide experimental characterization and device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

Thermal boundary conductance (TBC) is important for heat dissipation in light-emitting diodes (LEDs). In this study, we predicted the TBC between the high thermal conductivity boron arsenide (BAs) and silicon (Si) by nonequilibrium molecular dynamics (MD) simulations. From the thermal conductivity accumulation function with respect to phonon frequency, the dominant phonon frequencies for heat conduction in BAs are extremely different from those in Si. However, our nonequilibrium MD simulations indicated that the TBC of the BAs/Si interface was still high compared to most other interfaces, even though there was a major frequency mismatch in the thermal conductivity accumulation function between BAs and Si. The primary reason for the high TBC is the overlap of phonon density of states between BAs and Si in the frequency range of 5–8 THz. The range of predicted TBC of the BAs/Si interface was between 200 and 300 MW/m2 K in the temperature range of 300–700 K, and the values of the TBC were not sensitive to the temperature. We also found that the TBCs in Si/BAs and Si/Ge interfaces were close to each other considering the simulation uncertainty. This work indicates BAs as an excellent material for heat dissipation across the interfaces.

Wei, Zhiyong (ORCID:000000018686451X)↗
DOE OSTI2021

Controlling the symmetry of cadmium arsenide films by epitaxial strain

Epitaxial strains offer unique opportunities to obtain topological states in thin films and heterostructures that do not exist in their bulk counterparts. Here, we investigate the point group symmetries of coherently strained films of cadmium arsenide (Cd 3 As 2 ), a prototype three-dimensional Dirac semimetal, by convergent beam electron diffraction. We report a loss of the fourfold rotational axis and adoption of the orthorhombic mmm point group in (112)-oriented films under biaxial compressive stress. (001)-oriented Cd 3 As 2 films that are under a small biaxial tensile stress retain the fourfold rotational symmetry that protects the bulk nodes but adopt the non-centrosymmetric 4mm point group symmetry. This, in turn, suggests that (001) films adopt a different crystal structure in biaxial tension, one that differs in the arrangement of the ordered Cd vacancies that are an inherent feature of the crystal structure of Cd 3 As 2 and that are key to its nodal electronic structure. Density functional theory calculations confirm the experimental findings of the stability of the non-centrosymmetric structure under biaxial tension, whereas the centrosymmetric structure is stable under biaxial compression. The results show that bulk Cd 3 As 2 is already close to structural instability and showcase the extraordinary tunability of the topological states of Cd 3 As 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Design considerations for gallium arsenide pulse compression photoconductive switch

In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

42 ENGINEERING↗
DOE OSTI2024

Evaluation of silicon and indium gallium arsenide photodiodes as direct timing detectors for pulsed x-ray systems

Benchtop pulsed x-ray systems are commonly used to record dynamic material data on the order of nanoseconds, but pulse timing is often difficult to accurately determine. This study demonstrates that commercially available photodiodes can be used effectively for direct x-ray pulse detection without the need for visible light scintillators. X-ray pulses from four commercially available flash x-ray systems were quantified using one silicon and two indium gallium arsenide (InGaAs) photodiodes. The measured InGaAs pulse durations were strongly dependent on radiation dose in the non-linear operating regime, so the photodiodes were shielded to operate below the 2.5 V non-linear regime threshold. The average pulse duration and pulse arrival time jitter of the photodiodes for each x-ray source were within several nanoseconds with the exception of two sets of measurements that were affected by low instrument sensitivity and electrical noise. These results show that InGaAs photodiodes can be used as effective and repeatable stand-alone timing diagnostics for x-ray pulses as short as 20 ns or less.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

Cubic boron arsenide (BAs) was predicted to have an exceptionally high thermal conductivity (k) ~2000 Wm -1 K -1 at room temperature, comparable to that of diamond, based on first-principles calculations. Subsequent experimental measurements, however, only obtained a k of ~200 Wm-1K-1. To gain insight into this discrepancy, we measured phonon dispersion of single crystal BAs along high symmetry directions using inelastic x-ray scattering (IXS) and compared these with first-principles calculations. Based on the measured phonon dispersion, we have validated the theoretical prediction of a large frequency gap between acoustic and optical modes and bunching of acoustic branches, which were considered the main reasons for the predicted ultrahigh k. This supports its potential to be a super thermal conductor if very high-quality single crystal samples can be synthesized.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Lack of superconductivity in the phase diagram of single-crystalline Eu ( F e 1 - x C o x ) 2 A s 2 grown by transition metal arsenide flux

Here, the interplay of magnetism and superconductivity (SC) has been a focus of interest in condensed matter physics for decades. EuFe 2 As 2 has been identified as a potential platform to investigate interactions between structural, magnetic, and electronic effects as well as the coexistence of magnetism and SC with similar transition temperatures. However, there are obvious inconsistencies in the reported phase diagrams of Eu(Fe 1–x Co x ) 2 As 2 crystals grown by different methods. For transition metal arsenide (TMA)-flux-grown crystals, even the existence of SC is uncertain. Here we reexamine the phase diagram of single-crystalline Eu(Fe 1–x Co x ) 2 As 2 grown by TMA flux. We found that the lattice parameter c shrinks linearly with Co doping, almost twice as fast as that of the tin-flux-grown crystals. With Co doping, the spin-density-wave (SDW) order of the Fe sublattice is quickly suppressed, being detected only up to x=0.08. The magnetic ordering temperature of the Eu 2+ sublattice ( T Eu ) shows a systematic evolution with Co doping, first going down and reaching a minimum at x=0.08, then increasing continuously up to x=0.24. Over the whole composition range investigated, no signature of SC is observed above 1.8 K.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction

Cadmium arsenide (Cd 3 As 2 ) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room-temperature crystal structures of Cd 3 As 2 differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if Cd 3 As 2 is a Dirac or Weyl semimetal. Here, we apply convergent beam electron diffraction (CBED) to determine the point group of Cd 3 As 2 thin films grown by molecular-beam epitaxy. Using CBED patterns from multiple zone axes, high-angle annular dark-field images acquired in scanning transmission electron microscopy, and Bloch wave simulations, we show that Cd 3 As 2 belongs to the tetragonal 4/mmm point group, which is centrosymmetric. In conclusion, the results show that CBED can distinguish very subtle differences in the crystal structure of a topological semimetal, a capability that will be useful for designing materials and thin film heterostructures with topological states that depend on the presence of certain crystal symmetries.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic excitation linking quasi-one-dimensional Chevrel-type selenide and arsenide superconductors

The quasi-one-dimensional Chevrel phases, A 2 M o6 Se 6 (A=Tl, In, K, Rb, Cs), are of interest due to their atypical electronic properties. The Tl and In analogs undergo a superconducting transition whereas the alkali metal analogs show charge gapping of another, not well understood type. Here we report the results of inelastic neutron scattering on polycrystalline In 2 Mo 6 Se 6 (T c =2.85 K) and Rb 2 Mo 6 Se 6 (nonsuperconducting) samples, which reveal a column of intensity with linear dispersion from [0 0 1/2] to [0 0 1] in both compounds. The observed temperature and |Q| independence together suggest the presence of unconventional carriers with a spin contribution to the excitation. This is contrary to the prevailing model for these materials, which is that they are nonmagnetic. The excitation has similar dispersion and S(Q,E,T) behavior as one observed in the structurally related superconducting compounds A 2 Cr 3 As 3 and A 2 Mo 3 As 3 (A=K, Rb, Cs), which has been interpreted as magnetic in origin and related to Fermi surface nesting. The connection is unexpected because the calculated Fermi surface of the arsenides differs substantially from the A 2 Mo 6 Se 6 compounds, and many consider them distinct classes of materials. This observation suggests a hidden link in the physics between both classes of superconductors, perhaps originating from their quasi-low-dimensional character.

1-dimensional systems↗
DOE OSTI2025

Multiscale Explanation of the Missing Gallium Vacancy in Gallium Arsenide

Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. Yet, after decades of experimental investigation, the immobile Ga vacancy continues to evade detection, raising the question: where is the Ga vacancy? Static first-principles calculations predict a Ga vacancy should be readily observed. We find that short-time dynamical evolution of primary defects is the key to explaining this conundrum. Using a dynamical multiscale atomistically informed device engineering (AIDE) method, we discover that during the initial displacement damage, the Ga vacancy (3-/2-) defect level pins the Fermi level near the midgap, producing oppositely charged vacancies and interstitials. Driven by Coulomb attraction, fast As interstitials preferentially annihilate Ga vacancies. The Ga vacancy population plummets below detectable limits—and the now unpinned Fermi level recovers—before being experimentally observed. This dynamical model solves the mystery of the missing Ga vacancy and reveals the importance of a multiscale approach to explore the dynamical chemical behavior in experimentally inaccessible short-time regimes.

Diaz, Leopoldo [Sandia National Laboratories (SNL-↗
DOE OSTI2018

Crystal structure of the layered arsenide Rb 3 Cu 3 As 2

The crystal structure of a new arsenide, Rb 3 Cu 3 As 2 (trirubidium tricopper diarsenide), has been established from single-crystal X-ray diffraction data. This compound crystallizes in the K 3 Cu 3 P 2 type, with layers of interlinked CuAs 2 units. The partitioning of the available valence electrons yields the charge-balanced composition (Rb + ) 3 (Cu + ) 3 (As 3– ) 2 , placing this phase in a broad field of transition-metal-containing Zintl phases. First-principles calculations confirm a semiconducting ground state, in accordance with electron-counting considerations. Chemical bonding analysis reveals strong covalent Cu—As bonds and ionic Rb...As interactions. In addition, a weak attraction is found between the Cu atoms, possibly pointing toward cuprophilic interactions.

Chemistry↗
DOE OSTI2018

Negative Electron Affinity Gallium Arsenide Photocathodes Based on Optically Resonant Nanostructure

We report the design and fabrication of a new type of negative electron affinity (NEA) gallium arsenide (GaAs)photocathode with optically resonant nanostructures. We observed a significant enhancement of the quantum efficiency(QE) from the GaAs photocathode with nanowire arrays (NWA) due to the Mie resonance effect within the intended wavelength range. Theoretical calculations of the expected reflectance behaviour together with experimental results of optical and photoemission characteristics are presented.

Zhang, Shukui↗
DOE OSTI2014

Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Temperature dependence of carrier capture by defects in gallium arsenide

This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

Wampler, William R.↗
DOE OSTI2022

Ellipsoidal Fitting Methodology for Defect Clusters in Gallium Arsenide

In assessing the initial spatial distribution of defects from neutron or heavy ion irradiation, it is useful to have a reliable, automated, and fast-running tool to evaluate characteristic metrics such as the number of sub-clusters or the overall cluster volume. The latter metric, for instance, can be utilized to estimate a reference neutron fluence level at which inter-cluster interaction effects begin to become significant. This paper details a methodology to fit an arbitrarily complex defect map with a set of ellipsoids (one per identified sub-cluster) in which the constituent defects of a sub-cluster are determined using fuzzy degree-of-membership analysis. Specifically, a parameterized model is developed for point defects in gallium arsenide. Cluster volume calculations based on the model are compared against convex hull and single- ellipsoid representations. Results show that the parameterized sub-cluster model begins to deviate from the two reference models at a recoil energy of about 100 keV in GaAs, with the convex hull and single-ellipsoid representations increasingly overestimating the volume thereafter.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗