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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Optical transmittance of fused silica at elevated temperatures during high energy electron bombardment.

An experimental determination of the optical transmission of Corning 7940 UV and Suprasil I fused silica has been made. The LeRC dynamitron provided the equivalent ionizing radiation and high temperature that the transparent gas divider of an operating nuclear light bulb engine would experience. The irradiation induced absorption was measured at 2150 A, 2700 A, and 4500 A. The length of the irradiations were sufficient so that an equilibrium between radiation induced coloration and high temperature annealing was reached. The experimental results indicate a significant optical absorption, particularly at the shorter wavelength, which would make the use of fused silica in this concept questionable.

Smith, A. B.↗
NASA NTRS1972

Observation of defect annealing in neutron-irradiated silicon by space-charge-limited current.

Use of space-charge-limited current (SCLC) to observe defect annealing in neutron-irradiated silicon. From the observation of the trap-filled-limit voltage a deep-trap concentration in the irradiated unannealed crystals is found to be at least 1.4 x 10 to the 12th power per cu cm. Shallow traps are also observed. This deep-trap concentration decreases with anneal temperature up to 200 C, above which SCLC can no longer be observed. There is evidence that at least some of this decrease is due to the conversion of the deep traps to shallow traps.

Magee, T. J.↗
NASA NTRS1972

Development of GaAs solar cells

Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts.

Source record↗
NASA NTRS1972

Development of advanced high strength tantalum base alloys. Phase 3: Influence of metallurgical condition on the mechanical properties of ASTAR-811C sheet

Metallurgical condition was shown to have a significant effect on the creep properties of ASTAR-811C (Ta-8W-1Re-0.7Hf-0.025C) sheet. Cold worked material exhibited creep rates 30 times higher than solution annealed material and 10 times greater than for recrystallized material. Both grain size and the carbide morphology changes as the final annealing temperature was raised from 3000 F to 3600 F. However, the lowest creep rates were achieved for material which retained the high temperature form of the Ta2C precipitate. Samples with GTA weldments had essentially identical properties as recrystallized base metal. Cooling rates from 3600 F of 5, 50, and 800 F deg/min. had little effect on the 2000 and 2400 F creep behavior of ASTAR-811C.

Ammon, R. L.↗
NASA NTRS1975

Deformation and annealing study of Nicraly

Extensive experiments were carried out on the ODS alloy Nicraly, (an alloy prepared by mechanical alloying and consolidating a powder blend consisting of 16% chromium, 4% aluminum, 2-3% yttria, balance nickel), in efforts to develop methods of controlling the grain size and grain shape of the material. The experiments fell into two general categories: variations in the annealing parameters using the as-extruded material as it was received, and various thermomechanical processing schedules (various combinations of cold work and annealing). Success was achieved in gaining grain size and grain shape control by annealing of the as-extruded material. By proper selection of annealing temperature and cooling rates, the grain size of the as-received material was increased almost two orders of magnitude (from an average grain dimension of 0.023 mm to 1.668 mm) while the aspect ratio was increased by some 50% (from 20:1 to 30:1). No success was achieved in gaining significant control of the grain size and shape of the material by thermo-mechanical processing.

Trela, D. M.↗
NASA NTRS1977

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

Chen, C. Y.↗
NASA NTRS1978

Chemical vapor deposition of high T sub c superconductors

The results are reported of an investigation into the synthesis and properties of high temperature superconducting materials. A chemical vapor deposition apparatus was designed and built which is suitable for the preparation of multicomponent metal films This apparatus was used to prepare a series of high T sub c A-15 structure superconducting films in the binary system Nb-Ge. The effect on T sub c of a variety of substrate materials was investigated. An extensive series of ternary alloys were also prepared. Conditions allowing the brittle high T sub c (approximately 18 K) A-15 structure superconductor Nb3A1 to be prepared in a low T sub c but ductile form were found. Some of the ways that the ductile (bcc) form can be cold worked or machined are described. Measurements of rate of transformation of cold worked bcc material to the high T sub c A-15 structure with low temperature annealing are given. Preliminary measurements indicate that this material has attractive high field critical current densities.

Webb, G. W.↗
NASA NTRS1980

Radiation damage in lithium-counterdoped N/P silicon solar cells

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Hermann, A. M.↗
NASA NTRS1981

Silicide surface phases on gold

The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

Green, A. K.↗
NASA NTRS1981

Material and processing needs for silicon solar cells in space

The technical concerns of NASA in the area of space grade solar cells are summarized. Solar power needs are projected through 1987. The degradation of solar cell performance due to the effects of radiation on impurities and crystal defects and the improved performance of float zone silicon are illustrated. The reduction of oxygen and carbon in float zone silicon allows for much faster low temperature annealing of the defects. The effects of improved crystal purity on cell performance are summarized.

Brandhorst, H. W., Jr.↗
NASA NTRS1982

Nonequilibrium material effects on the behavior of polymeric composite matrices and their related composites

The effects of physical aging on the material properties of some linear and network macromolecular glasses are discussed. The free volume concept is used to describe this behavior. The effect of physical aging on properties of some uniaxial graphite/fiber epoxy resin composites is investigated using stress relaxation in both tensile and flexural modes. The matrix polymers used were resins both of which are based on a 4,4-methylenedianiline derivative of epichlorohydrin with diamino diphenyl sulfone (DDS) as the curing agent. The matrix resin, as used in the practical application in composites, not fully cured and the glass transition of the network was dependent on the curing schedule. The physical aging of the bulk crosslinked epoxy was found to depend on the annealing temperature, and the T sub g of the resin. The physical aging of the composite, monitored by the stress relaxation method, was found to be dependent on the testing direction.

Wilkes, G. L.↗
NASA NTRS1982

Doping behavior of iodine in Hg/0.8/Cd/0.2/Te

The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.

Vydyanath, H. R.↗
NASA NTRS1984

Substrate orientation dependence of enhanced epitaxial regrowth of silicon

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the 100 to the 110 and 111 line orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1 + or - 0.9. Boron produces a higher enhancement factor of 12.2 + or - 1.2, except in the case of 100. Implications of the results on various growth models are considered. The crystalline quality of regrown 111 layers is improved in the doped samples.

Ho, K. T.↗
NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗
NASA NTRS1985

'Diamondlike' carbon films - Optical absorption, dielectric properties, and hardness dependence on deposition parameters

An RF plasma deposition system was used to prepare amorphous 'diamondlike' carbon films. The source gases for the RF system include methane, ethylene, propane, and propylene, and the parameters varied were power, dc substrate bias, and postdeposition anneal temperature. Films were deposited on various substrates. The main diagnostics were optical absorption in the visible and in the infrared, admittance as a function of frequency, hardness, and Auger and ESCA spectroscopy. Band gap is found to depend strongly on RF power level and band gaps up to 2.7 eV and hardness up to 7 Mohs were found. There appears to be an inverse relationship between hardness and optical band gap.

Natarajan, V.↗
NASA NTRS1985

Amorphous metallic films in silicon metallization systems

Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

So, F.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗