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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2021

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Herein, proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Linking Domain Structure Evolution at a Grain Boundary to Piezoelectric Response via Nano‐Diffraction

Electric-field-induced domain structure switching in a 1 𝜇⁢m -thick Pb 0.99 (Zr 0.45 Ti 0.55 ) 0.98 Nb 0.02 O 3 (Nb-doped PZT) bicrystal film was characterized in situ via nano-focused synchrotron diffraction. The epitaxial film was deposited on a (100) SrTiO 3 bicrystal substrate. The changes in domain structure were mapped within a 5 𝜇⁢m × 5 𝜇⁢m area at and around an in-plane tilt-type (23.6°) grain boundary with 50 nm spatial resolution. Rocking curves collected at each point of the mapped area provided the ability to reconstruct spatially-varying three-dimensional (3D) reciprocal space maps around the grain boundary. The 3D reciprocal space maps reveal how different tilted 𝑎 -type domain variants interact with the grain boundary as a function of increasing electric field. Initially, a subset of 𝑎 -type domain variants with their polarization vectors largely orthogonal to the grain boundary were found in greater abundance within 570 nm of the grain boundary, possibly due to X-ray beam-induced local increases in the electrical conductivity, but after the coercive field was exceeded, reconfiguration of the ferroelastic domains was observed. The spatially-varying reciprocal space maps also facilitated evaluation of the strain field across the mapped area, along with 𝑑 33,𝑓 . Significant spatial heterogeneity of strain and 𝑑 33,𝑓 are observed, especially at the coercive field, which was attributed to maintaining deformation compatibility and correlated ferroelastic switching.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗
DOE OSTI2023

Antiferromagnetic Fe Te 2 1 T - phase formation at the Sb 2 Te 3 / Ni 80 Fe 20 interface

Bilayer topological insulator/ferromagnet (TI/FM) heterostructures are promising for spintronic applications due to their low switching energy and therefore power efficiency. Until recently, the reactivity of TI with FM films was overlooked in the spin orbit-torque literature, even though there are reports that it is energetically favorable for TIs to react with transition metals and form interfacial layers. Here, in this study we fabricated a TI/FM heterostructure comprised of molecular beam epitaxy grown Sb 2 Te 3 and DC sputtered Ni 80 Fe 20 . Broadband ferromagnetic resonance revealed spin-pumping evident by the significant enhancement in Gilbert damping, which is likely a signature of the topological surface states or the presence of large spin-orbit-coupling in the adjacent Sb 2 Te 3 . With low-temperature magnetometry, an exchange bias is observed which indicates an exchange interaction between an antiferromagnet (AFM) and an adjacent FM. Cross-section high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) characterization of the Sb 2 Te 3 - Ni 80 Fe 20 bilayer revealed a complex interface showing diffusion of Fe and Ni into the Sb 2 Te 3 film yielding the formation of a FeTe 2 1T-type structural phase. Furthermore, density functional theory calculations revealed that the FeTe 2 1T-phase has an AFM ground state. Due to experimental limitations in the electron energy loss spectroscopy measurements precise chemistry of the interfacial phase could not be determined, therefore it is possible that the FeTe 2 1T and/or an intermixed (Fe 1-x Ni x )Te 2 1T is the AFM interfacial phase contributing to exchange bias in the system. This work emphasizes the chemical complexity of TI/FM interfaces that host novel, metastable magnetic topological phases and require more in-depth studies of other similar interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Solution scattering at the Life Science X-ray Scattering (LiX) beamline

This work reports the instrumentation and software implementation at the Life Science X-ray Scattering (LiX) beamline at NSLS-II in support of biomolecular solution scattering. For automated static measurements, samples are stored in PCR tubes and grouped in 18-position sample holders. Unattended operations are enabled using a six-axis robot that exchanges sample holders between a storage box and a sample handler, transporting samples from the PCR tubes to the X-ray beam for scattering measurements. The storage box has a capacity of 20 sample holders. At full capacity, the measurements on all samples last for ∼9 h. For in-line size-exclusion chromatography, the beamline-control software coordinates with a commercial high-performance liquid chromatography (HPLC) system to measure multiple samples in batch mode. The beamline can switch between static and HPLC measurements instantaneously. In all measurements, the scattering data span a wide q -range of typically 0.006–3.2 Å −1 . Functionalities in the Python package py4xs have been developed to support automated data processing, including azimuthal averaging, merging data from multiple detectors, buffer scattering subtraction, data storage in HDF5 format and exporting the final data in a three-column text format that is acceptable by most data analysis tools. These functionalities have been integrated into graphical user interfaces that run in Jupyter notebooks, with hooks for external data analysis software.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

High-Spectral Resolution Lidar (HSRL) Instrument Handbook

High-spectral-resolution lidar (HSRL) systems provide vertical profiles of optical depth, backscatter cross-section, depolarization, and backscatter phase function. All HSRL measurements are calibrated by reference to molecular scattering, which is measured at each point in the lidar profile. Like the Raman lidar (RL), but unlike simple backscatter lidars such as the micropulse lidar (MPL), this enables the HSRL to measure backscatter cross-sections and optical depths without prior assumptions about the scattering properties of the atmosphere. The depolarization observations allow robust discrimination between ice and water clouds. Rigorous error estimates can be computed for all measurements. A very narrow angular field of view reduces multiple scattering contributions. The small field of view, coupled with a narrow optical bandwidth, nearly eliminates noise due to scattered sunlight. The laser transmitter is a diode-pumped, frequency-doubled Nd:YAG laser. Narrow-band, single-frequency operation is provided by injection seeding with a single-frequency, cw-diode-pumped diode laser. The main laser cavity is maintained in resonance with the seed laser by adjusting the cavity length to minimize the time between the Q-switch trigger and the emission of the laser pulse. The emission wavelength is tuned via temperature control of the seed laser crystal and is locked to line #1109 of the iodine absorption spectra. Locking is accomplished by minimizing the transmission through a 2-cm-long iodine absorption cell. Use of a high-repetition-rate laser and expansion of the transmitted beam through a 400-mm telescope reduces the transmitted energy density to eye-safe levels. It is possible to look directly into the output beam without hazard. The receiver and transmitter use the same afocal telescope, simplifying the maintenance of stable alignment of the transmitter and receiver although the angular FOV is only 100 μrad. The small FOV and the 4-kHz repetition rate also limit the near-field signal strength, making it possible to record continuous profiles that start at an altitude of ~100 m and extend to 30 km using photon counting detectors. The small FOV also suppresses multiple scattering contributions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

The Upgrade of the SNS Extraction Kicker Power Supplies for the Proton Power Upgrade

The Proton Power Upgrade (PPU) project at the Spallation Neutron Source (SNS) aims to enhance the linear accelerator's power output from 1.4 to 2.8 megawatts. A critical focus lies on upgrading the Extraction Kicker Power Supplies to handle the amplified beam power. The existing capacitor charging power supplies lacked the capability to charge the Blumlein-type Pulse Forming Network (PFN) to the required 40 kV at a repetition rate of 60 Hz. To address this limitation, an initial solution involving the use of a resonant charging circuit was proposed. However, a challenge arose with a self-firing issue in the thyristor switch, which proved unsolvable within the given timeframe. Facing a critical decision point in the project, an alternative approach was explored: integrating a supplementary power supply to enhance the overall power capacity. This solution was tested and ultimately chosen as the path forward. To accommodate the additional power supply, the power distribution system had to undergo upgrades. Throughout this endeavor, a comprehensive examination of the system took place, with meticulous identification of key components. This paper delves into the technical challenges encountered during the process and the corresponding solutions that were implemented.

Tan, Yugang [ORNL] (ORCID:0000000155968252)↗
DOE OSTI2023

Next steps in high-repetition-rate laser development for Thomson scattering

Design of a next generation high-rep-rate laser system is underway, aiming for a maximum rep rate of 100 kHz for 1 ms. This will be a "pulse-burst" laser, which is a type of heat-capacity laser. Heat-capacity laser operation is characterized by a burst of pulses of limited duration, with burst length ≤100 ms and pulse rep rate ≥1 kHz. Waste heat accumulates in the laser rod during the burst. This heat is deposited evenly throughout the rod volume, with very little heat removed during the burst, such that temperature rises evenly across the rod radius. Thus beam distortion due to thermal gradients is small. Heat is removed from the rod after the burst, with typically tens of seconds between bursts. Pulse-burst operation of flashlamp pumped Nd:YAG lasers is a cost-effective route to high-rep-rate capability. Pulse-burst laser systems with "fast burst" rep rates in the range of 10–20 kHz have been built for the Thomson scattering diagnostics on MST, NSTX-U, and LHD. For Thomson scattering diagnostic application, the typical requirements are 1064 nm, 1–2 J/pulse, ≤30 ns FWHM pulse, with a top-hat beam profile. A major requirement for this next generation laser system is flexibility in burst sequence programs, ranging from 1 kHz for 100 ms to 100 kHz for 1 ms, and a variety of scenarios in between so that operation can be tailored to plasma experiment requirements. Flashlamp pumping will be used for this next generation laser because it is inexpensive and flexible. A new switch-regulated flashlamp driver will provide improved flashlamp control at lower cost. Additional design issues such as the optimum flashlamp pumping spectrum and optimum Nd doping will be addressed. The use of commercial off-the-shelf components will be maximized in this laser system so that pulse-burst systems can be developed and built by others for new applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Current-Regulated Arc Modulator Optimization

n this study, the performance of a current-regulated arc modulator was investigated with a focus on its role in initiating and sustaining plasma discharge within the Magnetron Body of the LINAC system. The analysis centered on how switching components, circuit topology, and feedback loop architecture influence critical factors such as energy efficiency, discharge stability, and long-term plasma containment. Particular attention was given to variations in pulse termination behavior, as observed through oscilloscope traces, which revealed inconsistencies affecting the duty factor and cathode temperature. These fluctuations have downstream effects on the cesium-coated cathode surface, thereby impacting H⁻ ion production and beam reliability. Simulation-based testing in LTspice was used to evaluate noise suppression techniques and arc current regulation schemes, revealing how optimized snubber networks, improved pulse shaping, and feedback stability can mitigate modulator-induced noise. The results ide

Campos, Nathan↗
DOE OSTI2025

High-Voltage Pulsed Power Generator for Beam Injection Systems

Beam injection systems in hadron colliders require kickers generating ±50 kV peak voltages into a 50 Ω impedance, with peak currents of 1000 A and sub-10 ns rise and fall times. This paper presents a novel high-voltage pulse power generator utilizing a distributed pulser architecture. It combines gallium nitride (GaN) transistors in a Marx topology with an inductive adder, achieving nanosecond-scale switching speeds and high-power efficiency. Compared to other solutions such as based on MOSFETs or fast ionization dynistors, our development offers superior peak and average power performance, reduced system complexity, and enhanced reliability, marking a significant step forward in high-voltage pulse generation for accelerator applications.

Smirnov, Alexander (ORCID:0000000280631691)↗
DOE OSTI2025

Development and Testing of a new Current-Regulated Arc Modulator for the LINAC

In this study, the performance of a current-regulated arc modulator was investigated with a focus on its role in initiating and sustaining plasma discharge within the Magnetron Body of the LINAC system. The analysis centered on how switching components, circuit topology, and feedback loop architecture influence critical factors such as energy efficiency, discharge stability, and long-term plasma containment. Particular attention was given to variations in pulse termination behavior, as observed through oscilloscope traces, which revealed inconsistencies affecting the duty factor and cathode temperature. These fluctuations have downstream effects on the cesium-coated cathode surface, thereby impacting H⁻ ion production and beam reliability. Simulation-based testing in LTspice was used to evaluate noise suppression techniques and arc current regulation schemes, revealing how optimized snubber networks, improved pulse shaping, and feedback stability can mitigate modulator-induced noise. The results identified hardware level parameters that significantly enhance discharge repeatability and improve overall plasma performance under operational conditions.

Campos, Nathan [Unlisted, US; Fermilab]↗
DOE OSTI2024

Low loss fiber-coupled volumetric interconnects fabricated via direct laser writing

Photonic integrated circuits (PICs) are vital for high-speed data transmission. However, optical routing is limited in PICs composed of only one or a few stacked planes. Further, coupling losses must be low in deployed systems. Previously, we developed the subsurface controllable refractive index via beam exposure (SCRIBE) technique to write accurate 3D gradient refractive index (GRIN) profiles within a mesoporous silica scaffold. Here, we apply SCRIBE to fabricate low loss, broadband, polarization insensitive, fiber-coupled, single-mode volumetric interconnects that include waveguides traversing arbitrary 3D paths. By seamlessly integrating mode-matching subsurface lenses and GRIN waveguide tapers, calibrating for positional writing errors, implementing multipass exposure, automating alignment, and switching to antireflection coated fibers, we reduced the insertion loss for a fiber-PIC-fiber interconnect from 50 to 2.14 dB, or 1.47 dB, excluding the fiber array’s loss. Further, we establish an upper bound of 0.45 dB loss per coupler. We report quality factors of 27,000 and 77,000 and bending losses of 6 and 3 dB/cm for 15 and 30 µm radii microrings, respectively. We also demonstrate Bézier escalators, polarization-rotating and polarization-splitting interconnects, and a seven-channel 25 µm pitch volumetric interconnect. The SCRIBE platform presents a clear path toward realizing 3D PICs with unique functionality.

Optics↗
DOE OSTI2022

A Modern Ethernet Data Acquisition Architecture for Fermilab Beam Instrumentation

The Fermilab Accelerator Division, Instrumentation Department is adopting an open-source framework to replace our embedded VME-based data acquisition systems. Utilizing an iterative methodology, we first moved to embedded Linux, removing the need for VxWorks. Next, we adopted Ethernet on each data acquisition module eliminating the need for the VME backplane in addition to communicating with a rack mount server. Development of DDCP (Distributed Data Communications Protocol), allowed for an abstraction between the firmware and software layers. Each data acquisition module was adapted to read out using 1 GbE and aggregated at a switch which up linked to a 10 GbE network. Current development includes scaling the system to aggregate more modules, to increase bandwidth to support multiple systems and to adopt MicroTCA as a crate technology. The architecture was utilized on various beamlines around the Fermilab complex including PIP2IT, FAST/IOTA and the Muon Delivery Ring. In summary, we were able to develop a data acquisition framework which incrementally replaces VxWorks & VME hardware as well as increases our total bandwidth to 10 Gbit/s using off the shelf Ethernet technology.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

A 300 kA Pulsed Power Supply for LBNF

The Long Baseline Neutrino Facility (LBNF) will produce the worlds most intense neutrino beam. Three series connected magnetic horns will require 5kV, 300kA, 800$\mu$s pulses at a rate of 0.7Hz to focus the beam. Fermilab has designed and built pulsed high current supplies for horns in the past. Pulsed currents of 205 kA for Neutrinos at Main Injector (NuMI - NOvA), focusing a 120 GeV beam, and 170 kA for Booster Neutrino Beam (BNB - MiniBooNE) for focusing an 8 GeV beam have been operational for about 18 years. While the magnetic horns are expected to be replaced, the LBNF horn power supply is expected to last the lifetime of the project, 30 years. A resonant, half sine wave pulser was used for NuMI and BNB and has many practical advantages. The system has impedance limited fault currents by design, albeit large ones. That along with the resonant behavior means that thyristor switches are well suited. Many fault modes of the system have also been calculated. Several circuit changes were incorporated so that a single fault can be tolerated. The supply must be reversable to enable both neutrinos and anti-neutrinos to be produced. These reversal requirements required a significant amount of mechanical design and consideration to allow for quick reversal of all the semiconductors.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Two-dimensional ferromagnetic superlattices

Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (T C ) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their T C , particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-T C 2D FM Fe 3 GeTe 2 (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS) n , where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that T C of 4-layer Fe 3 GeTe 2 can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the T C enhancement of the Fe 3 GeTe 2 films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, T C can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices.

(Fe3GeTe2/CrSb)n superlattice↗
DOE OSTI2025

A high-temperature Rutherford Backscattering Spectrometry apparatus for in situ material characterization

A new methodology for high-temperature Rutherford Backscattering Spectrometry (HT-RBS) has been developed to enable in situ material characterization at elevated temperatures. A 3.5 MeV proton beam penetrates a 10-µm-thick 316L stainless steel foil mounted on a graphite substrate, with backscattered signals detected using an HT-RBS system. Conventional semiconductor detectors, primarily based on silicon, suffer significant performance degradation at temperatures higher than ~ 60 °C due to increased leakage current and noise, leading to signal distortion and failure. Here, to preserve spectral quality, a 5 µm aluminum foil shields the detector from thermal radiation, allowing reliable operation up to 900 °C at the target. A rotatable shutter provides additional thermal isolation during data collection pauses. In situ measurements of areal density changes of 316L stainless steel were conducted to validate the technique, revealing consistency with the known thermal expansion coefficient. The method facilitates seamless switching between irradiation and analysis, enabling continuous studies. This approach supports in situ investigations of diffusion, void swelling, creep, and corrosion, offering a versatile tool for advanced materials research.

36 MATERIALS SCIENCE↗
DOE OSTI2025

In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic–Organic Hybrid Thin Films for EUV Resist Platform

The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic–organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150–200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm 2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. In conclusion, this study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.

36 MATERIALS SCIENCE↗