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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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96 records · Page 6

The Effects of Absorber Thickness on Reverse-Bias Damage in Cu(In,Ga)Se2 Solar Cells

We studied a variety of absorber thicknesses in Cu(In,Ga)Se 2 devices to examine the ability of the cell to withstand reverse current flow without damage. Absorbers were varied from 2.5 um to 0.4 um, with the expectation that larger reverse current would be allowed to flow at lower voltages as absorbers were made thinner. Our initial experiments showed promise. However, as the efficiency of thin devices was improved, the reverse current allowed at a given voltage decreased. Here we present our negative results on the ability of thin devices to allow higher reverse currents at lower voltages. We also give details on our procedures for reverse-bias testing small-area solar cells. We hope this information will be useful for those who want to study reverse-bias at the cell level.

14 SOLAR ENERGY↗

Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries

Effects related to alkali metal doping and grain boundaries have puzzled the chalcopyrite photovoltaics community for a long time. This study is the first to report reversible oxidation of grain boundaries in CuInSe2 thin films. The phenomenon is observed in sodium-doped films, but not in undoped ones. Cathodoluminescence imaging, secondary ion mass spectrometry and Kelvin probe force microscopy analyses are performed on CuInSe2 thin films before and after exposure to vacuum. The findings suggest the existence of yet unidentified solid-gas equilibria. Resolving the nature of such reactions will provide new insights into the mechanism of alkali metal doping and passivation in chalcopyrite solar cells.

14 SOLAR ENERGY↗

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗

Bandgap Dependence of Near-Conduction Band State in (AgyCu1-y)(InXGa1-x)Se2 Solar Cells

(Ag, CU) (In,Ga)Se2 -based solar cells have achieved high collection efficiencies, but defects still limit efficiencies well below the theoretical limit. The near-conduction band defect, typically observed at EV+0.98 eV, has been ubiquitous across (Ag,Cu)(In,Ga)Se2 samples from multiple vendors. The current work explores a wider range of composition and demonstrates the trap energy varies relative to the valence band but is approximately constant relative to the conduction band (~Ec-0.13 eV). There is also no definitive dependence of the trap concentration on composition.

ACIGS↗

Photovoltaic (PV) Module Technologies: 2020 Benchmark Costs and Technology Evolution Framework Results

This report benchmarks 2020 PV module minimum sustainable price (MSP) via bottom-up manufacturing cost analysis, for established PV technologies in mass production, including crystalline silicon, cadmium telluride (CdTe), and copper indium gallium (di)selenide. We provide technology roadmaps to additional MSP reductions for these PV technologies. Separately, we consider III-V and perovskite PV technologies which are currently in small-scale or pilot production. Finally, this report uses a technology evolution framework (TEF) to analyze drivers of levelized cost of energy reductions, including installed system cost - which is heavily influenced by module price - as well as service life and annual energy yield.

14 SOLAR ENERGY↗

Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se 2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn 1-x GaxSe 2 (CIGSe) solar cells. A range of compositions are investigated, including constant x=0.35 and x=0.55 as well as a graded composition profile having a minimum of x=0.25. Both the open circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. Finally, to quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

14 SOLAR ENERGY↗