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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Investigation into the Development and Testing of a Simplex Capacitance Sensor for Rotor Tip Clearance Measurement in Turbo Machinery

The rotor tip clearance is a vital parameter to characterize turbomachinery performance. It is an essential measurement during engine development and testing. The efficiency of the major modules like fan, compressor and turbine depends on the optimum running clearances. The capacitive sensor is preferred for tip clearance measurements because of various inherent advantages. They are fabricated through complex processes for turbomachinery application and are expensive. These sensors are exposed to harsh engine environments and are likely to exhibit degraded performance. Insulation failure at sensing head, connector contamination and micro-cracks in the MI (Mineral Insulated) cable leads to noise in the signal output. Frequent mechanical failures are also seen due to work hardening of MI cables, lead connector detachments and failure of micro fins at interconnects. Fault fixing of these is tedious and very expensive. This paper presents the concerted effort in developing a simple capacitance sensor addressing potential sensor failure issues. The design features include simple construction, ease of sensor assembly, component realization and troubleshooting. The design also addresses all safety requirements. The sensor has a large sensing area (7.6 mm diameter) producing very stable, high-level signal. The developed sensor produces output that varies from 1 V{sub P-P} to 11 V{sub P-P} for blade-tip gaps between 3 mm to 0.4 mm respectively. Blade pass simulation studies across the sensor, display almost flat response at minimum clearance. This feature results in very minimal data acquisition errors. The sensor along with RC (Resistance-Capacitance) conditioning electronics was successfully used for clearance measurement on fan stage of gas turbine engine. Test results are in line with the predictions. Extensive tip clearance measurements on the engine validate the design. The current work provides an insight into the development of a simplex capacitance sensor for tip clearance measurement.

42 ENGINEERING↗
DOE OSTI2019

Capacitance of coarse-grained carbon electrodes with thickness up to 800 μm

We report that increasing the mass loading of active material in a supercapacitor electrode improves the energy storage capability per electrode area. However, the increase of mass loading is accompanied by the increased electrode thickness, which often causes drops in specific capacitance and counteracts the potential increase in areal capacitance once the electrode thickness exceeds 100 μm. In our previous work, we showed high specific capacitance retention of coarse-grained carbide derived carbon (CDC) with electrode thicknesses up to 1000 μm in organic electrolytes. In this work, we report that this behavior can be extended to coarse-grained activated carbon (AC). AC is the most common commercial supercapacitor electrode material with a much broader pore size distribution and lower electric conductivity compared to CDC. The areal capacitance of the AC electrode is enhanced from 2.3 F/cm 2 to 7.4 F/cm 2 at 5 mV/s, as the electrode thickness increases from 200 to 800 μm. With the increased mass loading of the active electrode material, the mass and volume occupied by current collectors and separators are reduced in the electrode stack, which leads to an increase of the gravimetric and volumetric energy density of the device. Finally, by reporting on this advantageous behavior in thick electrodes using coarse-grained carbons, we hope to garner interest toward an unexplored method for improving the performance of porous carbon-based supercapacitors, without increasing the cost or changing the current used supercapacitor manufacturing process.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Controlled synthesis of MnSn(OH){sub 6}/graphene nanocomposites and their electrochemical properties as capacitive materials

We report the synthesis of novel MnSn(OH){sub 6}/graphene nanocomposites produced by a co-precipitation method and their potential application for electrochemical energy storage. The hydroxide decorated graphene nanocomposites display better performance over pure MnSn(OH){sub 6} nanoparticles because the graphene sheets act as conductive bridges improving the ionic and electronic transport. The crystallinity of MnSn(OH){sub 6} nanoparticles deposited on the surface of graphene sheets also impacts the capacitive properties as electrodes. The maximum capacitance of 31.2 F/g (59.4 F/g based on the mass of MnSn(OH){sub 6} nanoparticles) was achieved for the sample with a low degree of crystallinity. No significant degradation of capacitance occurred after 500 cycles at a current density of 1.5 A/g in 1 M Na{sub 2}SO{sub 4} aqueous solution, indicating an excellent electrochemical stability. The results serve as an example demonstrating the potential of integrating highly conductive graphene networks into binary metal hydroxide in improving the performance of active electrode materials for electrochemical energy storage applications. - Graphical abstract: Graphite oxide (GO) can be synthesized by oxidizing graphite using Hummers method. Graphene was reduced from GO by thermal exfoliation. In this work, MnSn(OH){sub 6}/graphene nano-composites were synthesized by a simple co-precipitation method and their electrochemical performances have been explored. Highlights: Black-Right-Pointing-Pointer Noval MnSn(OH){sub 6}/graphene nano-composites were synthesized. Black-Right-Pointing-Pointer Microstructure can be tailored by changing the reaction temperature and time. Black-Right-Pointing-Pointer Crystallinity of MnSn(OH){sub 6} nanoparticles impacts capacitive properties as electrode. Black-Right-Pointing-Pointer Nano-composites display improved electrochemical performance over MnSn(OH){sub 6} alone. Black-Right-Pointing-Pointer Results serve as an example demonstrating the potential for energy storage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Soft-template-synthesis of hollow CuO/Co{sub 3}O{sub 4} composites for pseudo-capacitive electrode: A synergetic effect on electrochemical performance

Hollow CuO/Co{sub 3}O{sub 4} hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co{sub 3}O{sub 4} hybrids had higher capacitance and lower charge transfer resistance than bare Co{sub 3}O{sub 4} nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitance of the CuO/Co{sub 3}O{sub 4} hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g{sup −1} and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s{sup −1}. - Graphical abstract: Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized and display a peculiar synergetic effect on the resulting performances, which can further be evaluated and confirmed by series of electrochemical measurements. - Highlights: • Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized from bimetallic-Schiff base polymer precursors. • The capacitance of the CuO/Co{sub 3}O{sub 4} hybrids keeps a growth tendency after 2000 cycles. • A synergetic effect is found for the hybrids in electrochemical energy storage process.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Synthesis and electrochemical capacitive properties of nitrogen-doped porous carbon micropolyhedra by direct carbonization of zeolitic imidazolate framework-11

Highlights: • Nitrogen-doped porous carbon micropolyhedra (N-PCMPs) were prepared from ZIF-11. • The activated N-PCMPs with fused KOH (N-PCMPs-A) have high specific surface area. • N-PCMPs-A exhibits high specific capacitance. • N-PCMPs-A reveals good cycling performance even at a high current density. - Abstract: Nitrogen-doped porous carbon micropolyhedra (N-PCMPs) were successfully prepared by direct carbonization of ZIF-11 polyhedra and further activated with fused KOH to obtain N-PCMPs-A. The morphology and microstructure of samples were examined by scanning electron microscopy, X-ray diffraction, and micropore and chemisorption analyzer. Electrochemical properties were characterized by cyclic voltammetry and galvanostatic charge/discharge method in 1.0 M H{sub 2}SO{sub 4} aqueous solution on a standard three-electrode system. Results show that, compared with N-PCMPs, N-PCMPs-A has higher specific surface area (2188 m{sup 2} g{sup −1}) and exhibits improved electrochemical capacitive properties (307 F g{sup −1} at 1.0 A g{sup −1}). The mass specific capacitance of N-PCMPs-A is also higher than that of most MOF-derived carbons, some carbide-derived carbons and carbon aerogel-derived carbons. In addition, the capacitance of the N-PCMPs-A retains 90% after 4000 cycles even at a high current density of 10 A g{sup −1}. These imply that N-PCMPs-A is the promising materials for the construction of a high-performance supercapacitor.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Origins and Implications of Interfacial Capacitance Enhancements in C 60 -Modified Graphene Supercapacitors

Understanding and controlling the electrical response at a complex electrode–electrolyte interface is key to the development of next-generation supercapacitors and other electrochemical devices. In this work, we apply a theoretical framework based on the effective screening medium and reference interaction site model to explore the role of electrical double-layer (EDL) formation and its interplay with quantum capacitance in graphene-based supercapacitors. In addition to pristine graphene, we investigate a novel C60-modified graphene supercapacitor material, which promises higher charge-storage capacity. Beyond the expected enhancement in the quantum capacitance, we find that the introduction of C60 molecules significantly alters the EDL response. These changes in EDL are traced to the interplay between surface morphology and charge localization character and ultimately dominate the overall capacitive improvement in the hybrid system. Our study highlights a complex interplay among surface morphology, electronic structure, and interfacial capacitance, suggesting general improvement strategies for optimizing carbon-based supercapacitor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dissolved CO 2 Modulates the Electrochemical Capacitance on Gold Electrodes

The presence of CO 2 at an electrified interface between an aqueous electrolyte and a metal electrode is the prerequisite for many electrochemical CO 2 capture technologies. To understand the behavior of dissolved CO 2 at an aqueous electrified interface, we characterized the electrochemical interface of planar gold electrodes with cyclic voltammetry, electrochemical impedance spectroscopy (EIS), electrochemical surface plasmon resonance (EC–SPR), and attenuated total reflectance surface-enhanced infrared spectroscopy (ATR–SEIRAS). Under all investigated conditions, we observed a decrease in the electrochemical capacitance upon saturation of the electrolyte with CO 2 , as compared to an electrolyte saturated with Ar. EIS and EC–SPR showed that this capacitance reduction was also potential dependent: it reached a minimum near the point of zero charge and became more significant as the applied potential moved further away from the point of zero charge. Hybrid quantum–classical simulations of the gold/aqueous electrolyte interface indicate that bicarbonate decreases the capacitance and modifies the composition of the electric double layer. In addition to the binding of bicarbonate under positive bias, we propose that molecular CO 2 can be induced by applied potential to concentrate in the diffuse layer of the electric double layer, leading to a reduction in the electrochemical capacitance under both negative and positive bias. Furthermore, this work advances the understanding of non-Faradaic effects of dissolved CO 2 at aqueous electrified interfaces of relevance for electrochemical CO 2 capture.

25 ENERGY STORAGE↗
DOE OSTI2018

Electrochemical tuning of capacitive response of graphene oxide

The increasing energy demands of modern society require a deep understanding of the properties of energy storage materials, as well as the tuning of their performance. We show that the capacitance of graphene oxide (GO) can be precisely tuned using a simple electrochemical reduction route. In situ resistance measurements, in combination with cyclic voltammetry measurements and Raman spectroscopy, have shown that upon reduction GO is irreversibly deoxygenated, which is further accompanied by structural ordering and an increase in electrical conductivity. The capacitance is maximized when the concentration of oxygen functional groups is properly balanced with the conductivity. Any further reduction and deoxygenation leads to a gradual loss of capacitance. The observed trend is independent of the preparation route and the exact chemical and structural properties of GO. It is proposed that an improvement in the capacitive properties of any GO can be achieved by optimization of its reduction conditions.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2011

Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions

Scanning capacitance microscopy is used to characterize the electronic properties of ErAs nanoparticles embedded in GaAs pn junctions grown by molecular beam epitaxy. Voltage-dependent capacitance images reveal localized variations in subsurface electronic structure near buried ErAs nanoparticles at lateral length scales of 20-30 nm. Numerical modeling indicates that these variations arise from inhomogeneities in charge modulation due to Fermi level pinning behavior associated with the embedded ErAs nanoparticles. Statistical analysis of image data yields an average particle radius of 6-8 nm--well below the direct resolution limit in scanning capacitance microscopy but discernible via analysis of patterns in nanoscale capacitance images.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C -0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C -0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

The capacitance-voltage-temperature characteristics of nonintentionally doped In{sub 0.16}Al{sub 0.84 }N/n{sup +}-GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poisson's equation, especially near the edge of the space-charge region, the so-called transition region. The concentration of a shallow donor and of a deep DX-like center, previously reported, is properly determined. The key parameter to discuss the temperature dependence of the capacitance is the ratio between the frequency of the small ac modulating signal and the temperature-dependent emission rate associated to each level. The capacitance-voltage C-V{sub a} curves were successfully fitted using a three parameters expression over the full range of temperatures. The concentration of both shallow and deep levels exceeds a few 10{sup 18} cm{sup −3}. Based on secondary ion mass spectrometry profiling, we assign both levels to the dominant oxygen impurity. This result supports our previous assignment of the shallow donor to a substitutional oxygen atom on a nitrogen site and the deep state to an O-related DX center, naturally explaining its high concentration. The sluggish kinetics at low temperatures, associated to the large concentration of deep levels located near the transition region, is illustrated by hysteresis loops in the C-V{sub a} curves below 270 K. Furthermore, the contribution of free carriers to the capacitance is revealed below 150 K, when both shallow and deep donors cannot respond anymore due to an emission rate lower than the 1 MHz modulating frequency. Finally, the presence of a highly doped thin surface barrier, as already reported in other III-nitrides, finds further support.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Quantum capacitance of graphene in contact with metal

We report a versatile computation method to quantitatively determine the quantum capacitance of graphene when it is in contact with metal. Our results bridge the longstanding gap between the theoretically predicted and experimentally measured quantum capacitance of graphene. Contrary to popular assumptions, the presence of charged impurities or structural distortions of graphene are not the only sources of the asymmetric capacitance with respect to the polarity of the bias potential and the higher-than-expected capacitance at the Dirac point. They also originate from the field-induced electronic interactions between graphene and metal. We also provide an improved model representation of a metal–graphene junction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Superstructured NiMoO 4 @CoMoO 4 core-shell nanofibers for supercapacitors with ultrahigh areal capacitance

High areal capacitance for a practical supercapacitor electrode requires both large mass loading and high utilization efficiency of electroactive materials, which presents a great challenge. Herein, we demonstrated the unprecedented synthesis of superstructured NiMoO 4 @CoMoO 4 core-shell nanofiber arrays (NFAs) on a Mo-transition-layer-modified nickel foam (NF) current collector as a new material, achieving the synergistic combination of highly conductive CoMoO 4 and electrochemical active NiMoO 4 . Moreover, this superstructured material exhibited a large gravimetric capacitance of 1,282.2 F/g in 2 M KOH with a mass loading of 7.8 mg/cm 2 , leading to an ultrahigh areal capacitance of 10.0 F/cm 2 that is larger than any reported values of CoMoO 4 and NiMoO 4 electrodes. In conclusion, this work provides a strategic insight for rational design of electrodes with high areal capacitances for supercapacitors.

42 ENGINEERING↗
DOE OSTI2020

Efficient and Flexible Sensitivity Matrix Computation for Adaptive Electrical Capacitance Volume Tomography

Electrical capacitance tomography is a widely used sensor modality for flow imaging in many industrial settings. Adaptive Electrical Capacitance Volume Tomography (AECVT) extends the capabilities of traditional ECT by enabling direct volumetric imaging and an improved resolution. Construction of the sensitivity matrix is a necessary step to obtain flow images. This step requires computation of the electric field inside the sensing domain, which is done via a typical field solver such as the finite element method. In this work, we present an efficient and flexible method to construct the sensitivity matrix for Adaptive Electrical Capacitance Volume Tomography (AECVT) based on individual electrode segment excitations and their judicious combination to form desired matrix elements. We illustrate how the proposed method yields the same sensitivity matrix as the traditional method but at a much lower computational cost. Once all segment contributions are obtained, we also indicate how the proposed method, unlike the traditional approach, can generate the sensitivity matrix on demand for an arbitrary combination of synthetic electrodes and obviating the need for any additional field computations. Finally, we present image reconstruction results for two different experimental scenarios where the mutual capacitance data and the corresponding sensitivity vectors are obtained through the proposed measurement combination scheme.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Medium-Voltage Isolated Auxiliary Power Supply Design for High Insulation Capability, Ultra-Low Coupling Capacitance, and Small Size

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as small as possible. However, the high insulation and low coupling capacitance requirements, considering the high voltage and high dv / dt , are constraints of size reduction. This article proposes an MV IAPS design for high insulation capability, ultra-low coupling capacitance, and small size. The topology selection, efficiency, load regulation, coupling capacitance, and size reduction considerations are discussed. A 2.5 W MV IAPS is designed and built for a 10 kV SiC mosfet -based 13.8 kV/100 kW three-phase converter, achieving a partial discharge (PD) inception voltage of higher than 15 kV rms, ultra-low coupling capacitance of 1.03 pF, and smaller size than that of the commercial products as well as the state-of-art research prototypes. Experimental results of PD test, 10 kV SiC mosfet -based half-bridge test, and 13.8 kV/100 kVA three-phase converter full rating test are conducted for design validation.

42 ENGINEERING↗
DOE OSTI2013

Voltage dependence of the differential capacitance of a p{sup +}-n junction

The dependences of the differential capacitance and current of a p{sup +}-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p{sup +}-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p{sup +}-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p{sup +}-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.

36 MATERIALS SCIENCE↗