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At least 109 records · Page 6

Reflecting boundary conditions for graded p-n junctions

In a graded junction, the formalism for handling reflecting boundary conditions must be modified. Since a significant drift term is present, zero recombination velocity at the surface does not imply a zero excess carrier gradient but rather zero overall flux. A model for analyzing p-n junctions fabricated by implantation or diffusion is presented, assuming the dominant recombination mechanism in the graded region is Auger. The model enables optimization of diode design. By proper selection of parameters, mainly by reducing surface concentration or by increasing the steepness of the dopant profile, it is possible to drastically reduce the saturation current generated by the graded region.

Schacham, S. E.↗

The effect of Be/+/ ion implanted exponential and uniform impurity profiles on the electrical characteristics of GaAs solar cells

The high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile.

Vaidyanathan, K. V.↗

Performance limitations of silicon solar cells

This paper discusses the performance limitations of silicon solar cells which have been identified and investigated using a detailed numerical analysis of solar cell operation. Efficiency limitations are discussed as related to doping densities, minority carrier lifetimes, widths of solar cell regions, surface recombination, antireflecting layers, and ohmic contact stripes. Areas in which improvements can be expected in performance are identified and discussed.

Hauser, J. R.↗

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗

Optically Addressable Spatial Light Modulators

Integrated multiple-quantum-well/Fabry-Perot structure provides high-contrast variation of reflection of reading beam, under control of writing beam. Periodic potential barriers separate photogenerated electrons from holes, leading to long recombination lifetimes and large concentrations of free charge carriers. Concentrations quench excitons or fill energy bands in quantum wells, altering absorption of reading beam.

Maserjian, Joseph↗

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Schmidt, P.↗

Some characteristics of low-cost silicon sheet

The paper discusses structural defects in low-cost silicon sheets and their effect on the electronic properties related to solar cell performance. Experimental data are presented on the influence of grain boundaries on minority carrier diffusion length, impurity defect interaction, and variable surface recombination velocity. An analytical model of the effect of grain boundaries on solar cell performance is constructed based on these results.

Koliwad, K. M.↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

Transport of majority and minority carriers in 2-micron-diameter Pt-GaAs Schottky barriers

An experimental study of small area (2-micron diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermionic field emission current for large forward-bias voltage of the emitter junction (V-EB no less than about 0.4 V), whereas the smaller forward-bias (V-EB no greater than about 0.4 V) recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from about 0.02 to 0.00001 as VEB increases from 0.5 to 1.0 V. The minority carrier diffusion length was measured to be about 1.3 microns. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.

Chan, E. Y.↗

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents

The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.

Luke, K. L.↗

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Daud, T.↗

Steady-state currents in p-n junction filaments or grains in case of large surface recombination velocities at lateral surfaces

Recently it has been pointed out that the saturation current of a semiconductor filament which constitutes part of a p-n junction diverges when the surface recombination velocity at the faces become infinitely large. Here it is pointed out that this is to be expected on physical grounds since, whenever the carrier concentration is kept off equilibrium by an outside agent, and at the same time recombination lifetimes in the bulk or in surface layers tend to zero, concentration gradients tend to infinity. As also previously noted, the situation can be remedied by using realistic (finite) surface recombination velocities in model calculations. However, this procedure leads to mathematical complexities which have been circumvented recently by the introduction of a heuristic approach. It is the aim of this paper to assess the validity of the heuristic approach by means of detailed and exact calculations.

Von Roos, O.↗

The solar cells and their mounting

Objectives in development of the solar plant for the Telstar spacecraft were to provide a power source which would withstand launching stresses and the expected space environment, with optimum end-of-life performance. Radiation damage to the silicon solar cells is the primary factor limiting their useful life; the effect of energetic protons or electrons is the generation of recombination centers in the silicon which reduce the minority-carrier diffusion length and therefore the long-wave response of the cell. The spacecraft solar cells use the n-on-p structure, in preference to conventional p-on-n structure, to obtain a factor of 3 to 10 increased life expectancy. Response to light in the 0.4 to 0.7 micron range is enhanced by using a thin n-layer (about 0.5 micron) and an antireflection coating with minimum reflectance at 0.55 micron wavelength. Early estimates of electron and proton fluxes in the satellite orbit showed that even the best cells would not give sufficient life without radiation shielding. Therefore the cells are protected against electrons of energy up to 1 Mev by 0.3 gm/sq. cm sapphire cover plates. The cell mountings are designed to withstand peak vibration stresses of 200 g and repeated temperature cycles from +65°C to −100°C. The 3600-cell solar power plant is composed of 300 twelve-cell groups of 1 cm × 2 cm cells, yielding a nominal initial power of 14 watts at 28 volts for any spin-axis orientation relative to the sun. Telemetry information on performance of the solar plant indicates degradation of the shielded solar cells equal to that measured in the laboratory on unshielded cells with a 1-Mev normal incidence flux of 6 × 10^(12) electrons/(sq. cm day). From this comparison it is estimated that the plant will degrade to 68 per cent of its initial output after two years in orbit.

SPACECRAFT POWER SUPPLY↗

Experimental and computer studies of the radiation effects in silicon solar cells

A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

Leadon, R. E.↗

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

Del Alamo, Jesus A.↗