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At least 109 records · Page 6

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Capacitance nonlinearities were studied in atomic layer deposited HfO{sub 2} films using two types of signals: a pure ac voltage of large magnitude (ac nonlinearities) and a small ac voltage superimposed to a large dc voltage (dc nonlinearities). In theory, ac and dc nonlinearities should be of the same order of magnitude. However, in practice, ac nonlinearities are found to be an order of magnitude higher than dc nonlinearities. Besides capacitance nonlinearities, hopping conduction is studied using low-frequency impedance measurements and is discussed through the correlated barrier hopping model. The link between hopping and nonlinearity is established. The ac nonlinearities are ascribed to the polarization of isolated defect pairs, while dc nonlinearities are attributed to electrode polarization which originates from defect percolation paths. Both the ac and dc capacitance nonlinearities display an exponential variation with voltage, which results from field-induced lowering of the hopping barrier energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd{sub 2}O{sub 3} thin films on Si

Dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films grown on Si have been found to improve significantly by incorporation of suitable dopants. However, in order to achieve optimum electrical properties from such doped oxides, it is important to understand the correlation between doping and the electronic structure of the material. In the present article, we report about the effect of nitrogen doping on the electronic structure and room temperature dc leakage properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N{sub 2}O as the nitridation agent. First investigations confirmed the presence of substitutional N in the Gd{sub 2}O{sub 3}:N layers. Incorporation of nitrogen did not affect the structural quality of the oxide layers. X ray photoelectron spectroscopy investigations revealed band gap narrowing in epitaxial Gd{sub 2}O{sub 3} due to nitrogen doping, which leads to reduction in the valence band offset of the Gd{sub 2}O{sub 3}:N layers with Si. DC leakage current measured at room temperature revealed that despite reduction in the band gap and valence band offsets due to N doping, the Gd{sub 2}O{sub 3}:N layers remain sufficiently insulating. A significant reduction of the leakage current densities in the Gd{sub 2}O{sub 3}:N layers with increasing nitrogen content suggests that doping of epitaxial Gd{sub 2}O{sub 3} thin films with nitrogen can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes

Aligned arrays of semiconducting single-walled carbon nanotubes (s-SWNTs) represent ideal configurations for use of this class of material in high performance electronics. Development of means for removing the metallic SWNTs (m-SWNTs) in as-grown arrays represents an essential challenge. Here, we introduce a simple scheme that achieves this type of purification using direct, selective current injection through interdigitated electrodes into the m-SWNTs, to allow their complete removal using processes of thermocapillarity and dry etching. Experiments and numerical simulations establish the fundamental aspects that lead to selectivity in this process, thereby setting design rules for optimization. Single-step purification of arrays that include thousands of SWNTs demonstrates the effectiveness and simplicity of the procedures. The result is a practical route to large-area aligned arrays of purely s-SWNTs with low-cost experimental setups.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and AC coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The physical nature of the phenomenon of positive column plasma constriction in low-pressure noble gas direct current discharges

The essence of the positive-column plasma constriction for static (the diffusion mode) and dynamic ionization equilibrium (the stratificated and constricted modes) is analyzed. Two physical parameters, namely, the effective ionization rate of gas atoms and the ambipolar diffusion coefficient of electrons and ions, determine the transverse distribution of discharge species and affect the current states of plasma. Transverse constriction of the positive column takes place as the gas ionization level (discharge current) and pressure increase. The stratified mode (including the constricted one) is observed between the two adjacent types of self-sustained discharge phases when they coexist together at the same time or in the same place as a coherent binary mixture. In the case, a occurrence of the discharge phase with more high electron density presently involve a great decrease in the cross-section of the current channel for d.c. discharges. Additional physical factors, such as cataphoresis and electrophoresis phenomena and spatial gas density inhomogeneity correlated with a circulatory flow in d.c. discharges, are mainly responsible for the current hysteresis and partially constricted discharge.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phenomena of oscillations in atmospheric pressure direct current glow discharges

Self-sustained oscillations in a dc glow discharge with a semiconductor layer at atmospheric pressure were investigated by means of a one-dimensional fluid model. It is found that the dc glow discharge initially becomes unstable in the subnormal glow region and gives rise to oscillations of plasma parameters. A variety of oscillations with one or more frequencies have been observed under different conditions. The discharge oscillates between the glow discharge mode and the Townsend discharge mode in the oscillations with large amplitude while operates in the subnormal glow discharge mode all the while in the oscillations with small amplitude. Fourier Transform spectra of oscillations reveal the transition mechanism between different oscillations. The effects of semiconductor conductivity on the oscillation frequency of the dominant mode, gas voltage, as well as the discharge current have also been analyzed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Direct current response of a thin scCVD diamond detector under increased applied field to 14.1 MeV neutrons

An avalanche effect yielding inherent gain can be exploited in thin, single-crystal chemical vapor deposition (scCVD) diamond. It occurs when a high enough bias is applied across the diamond thickness while avoiding breakdown. This charge multiplication effect was studied previously with alpha particles and heavy ions either by using the transient current technique or by measuring the energy spectrum. The measurements we obtained to evaluate the charge multiplication performance of a 10 μm thick scCVD diamond detector used a novel approach—we employed an electrometer to characterize the response of the detector by performing directly coupled current measurements (time-averaged charge, at 1 Hz sampling) when exposed to 14.1 MeV neutrons from deuterium-tritium fusion. We measured both the dark and irradiated currents from the detector over a range of applied displacement field values from 2 to 75 V/μm. A histogram method with central mean and standard deviation width was used to determine the current over each measurement duration typically from 100 to 300 seconds. The dark-subtracted irradiated current (i.e., contrast) was used to evaluate the gain of the detector at each applied displacement field. The contrast at an applied displacement field between 15 and 20 V/μm was higher than the expected linear increase in contrast proportional to the increased applied bias, indicating the possible presence of avalanche events in the diamond. The detector response also indicated possible polarization and charge depletion effects. These results provide an opportunity to further explore the use of thin scCVD diamond as a fast neutron current mode detector with inherent gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

First-cut design of an all-superconducting 100-T direct current magnet

A 100-T magnetic field has heretofore been available only in pulse mode. This first-cut design demonstrates that a 100-T DC magnet (100 T) is possible. We base our design on: Gadolinium-based coated superconductor; a nested-coil formation, each a stack of double-pancake coils with the no-insulation technique; a band of high-strength steel over each coil; and a 12-T radial-field limit. The 100 T, a 20 mm cold bore, 6-m diameter, 17-m height, with a total of 12 500-km long superconductor, stores an energy of 122 GJ at its 4.2-K operating current of 2400 A. It requires a 4.2-K cooling power of 300 W.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

36 MATERIALS SCIENCE↗

Active electron energy distribution function control in direct current discharge using an auxiliary electrode

The electron energy distribution functions are studied in the low voltage dc discharge with a constriction, which is a diaphragm with an opening. The dc discharge glows in helium and is sustained by the electron current emitted from a heated cathode. We performed kinetic simulations of dc discharge characteristics and electron energy distribution functions for different gas pressures (0.8 Torr-4 Torr) and discharge current of 0.1 A. The results of these simulations indicate the ability to control the shape of the electron energy distribution functions by variation of the diaphragm opening radius.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Analysis of cathode geometry to minimize cathode erosion in direct current microplasma jet

Microplasma jets are now widely used for deposition, etching, and materials processing. The present study focuses on the investigation of the influence of cathode geometry on deposition quality, for microplasma jet deposition systems in low vacuum. The interest here is understanding the influence of hydrogen on sputtering and/or evaporation of the electrodes. Samples obtained with two cathode geometries with tapered and rectangular cross-sections have been investigated experimentally by scanning electron microscopy and energy dispersion X-ray spectroscopy. Samples obtained with a tapered-geometry cathode present heavy contamination, demonstrating cathode erosion, while samples obtained with a rectangular-cross-section cathode are free from contamination. These experimental characteristics were explained by modelling results showing a larger radial component of the electric field at the cathode inner wall of the tapered cathode. As a result, ion acceleration is larger, explaining the observed cathode erosion in this case. Results from the present investigation also show that the ratio of radial to axial field components is larger for the rectangular geometry case, thus, qualitatively explaining the presence of micro-hollow cathode discharge over a wide range of currents observed in this case. In the light of the above findings, the rectangular cathode geometry is considered to be more effective to achieve cleaner deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Generation of multiple toroidal dust vortices by a non-monotonic density gradient in a direct current glow discharge plasma

Observation of two well-separated dust vortices in an unmagnetized parallel plate DC glow discharge plasma is reported in this paper. A non-monotonic radial density profile, achieved by an especially designed cathode structure using a concentric metallic disk and ring of different radii, is observed to produce double dust tori between cathode and anode. PIV analysis of the still images of the double tori shows oppositely rotating dust structures between the central disk and the ring. Langmuir probe measurements of background plasma shows a non-uniform plasma density profile between the disk and the ring. Location and sense of rotation of the dust vortices coincides with the location and direction of the radial gradient in the ion drag force caused by the radial density gradient. The experimentally observed dust vorticity matches well with the calculated one using hydrodynamic formulations with shear in ion drag dominating over the dust charge gradient. These results corroborate that a radial gradient in the ion drag force directed towards cathode is the principal cause of dust rotation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Positive direct current corona discharges in single wire-duct electrostatic precipitators

This paper is aimed to study the characteristics of the positive dc corona discharges in single wire-duct electrostatic precipitators. Therefore, the corona discharges were formed inside dry air fed single wire-duct reactor under positive dc voltage at the normal atmospheric conditions. The corona current-voltage characteristics curves have been measured in parallel with the ozone concentration generated inside the reactor under different discharge conditions. The corona current-voltage characteristics curves have agreed with a semi empirical equation derived from the previous studies. The experimental results of the ozone concentration generated inside the reactor were formulated in the form of an empirical equation included the different parameters that were studied experimentally. The obtained equations are valid to expect both the current-voltage characteristics curves and the corresponding ozone concentration that generates with the positive dc corona discharges inside single wire-duct electrostatic precipitators under any operating conditions in the same range of the present study.

54 ENVIRONMENTAL SCIENCES↗

Account of nonlocal ionization by fast electrons in the fluid models of a direct current glow discharge

We developed and tested a simple hybrid model for a glow discharge, which incorporates nonlocal ionization by fast electrons into the 'simple' and 'extended' fluid frameworks. Calculations have been performed for an argon gas. Comparison with the experimental data as well as with the hybrid (particle) and fluid modelling results demonstated good applicability of the proposed model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Synchronization between two coupled direct current glow discharge plasma sources

Experimental results on the nonlinear dynamics of two coupled glow discharge plasma sources are presented. A variety of nonlinear phenomena including frequency synchronization and frequency pulling are observed as the coupling strength is varied. Numerical solutions of a model representation of the experiment consisting of two coupled asymmetric Van der Pol type equations are found to be in good agreement with the observed results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗