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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

First-principles calculations of defects and electron–phonon interactions play a critical role in the design and optimization of materials for electronic and optoelectronic devices. The late Audrius Alkauskas made seminal contributions to developing rigorous first-principles methodologies for the computation of defects and electron–phonon interactions, especially in the context of understanding the fundamental mechanisms of carrier recombination in semiconductors. Alkauskas was also a pioneer in the field of quantum defects, helping to build a first-principles understanding of the prototype nitrogen-vacancy center in diamond, as well as identifying novel defects. Here, we describe the important contributions made by Alkauskas and his collaborators and outline fruitful research directions that Alkauskas would have been keen to pursue. Audrius Alkauskas’ scientific achievements and insights highlighted in this article will inspire and guide future developments and advances in the field.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor

Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.

CdTe photovoltaics↗
DOE OSTI2023

Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy

Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green (peak wavelengths 𝜆 ≈ 515nm) light-emitting diodes (LEDs) with and without a prewell superlattice (SL). Here, we report on the detection of a high-energy upper valley at ∼ 1.7eV above the Γ valley from samples with no prewell SL. We propose that these upper valley electrons originate predominantly from trap-assisted Auger recombination (TAAR) in green LEDs, as the intensity of these peaks is found to have quadratic dependence on the carrier density 𝑛 [see Espenlaub et al., J. Appl. Phys. 126, 184502 (2019)]. The high-energy upper valley peak was not observed in the sample with a prewell SL which is attributed to gettering by the prewell SL of still unidentified impurities that act as TAAR centers.

carrier generation & recombination↗
DOE OSTI2020

Deep level defects and cation sublattice disorder in ZnGeN 2

The III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include the heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of the limitations of the binary nitrides as well as new applications. However, the more complex cation sublattice also gives rise to new complexities with both native and extrinsic defects, such as disorder on the cation sublattice. Here, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy measurements of defect energy levels in ZnGeN 2 combined with transmission microscopy and crystal lattice diffraction reveal optical signatures of mid-gap states that can be associated with cation sublattice disorder. The energies of these characteristic optical signatures in ZnGeN 2 thin films grown by metal-organic chemical vapor deposition are in good agreement with energy levels predicted by density functional theory for specific thermodynamically stable native point defects. To test the dependence of these defect signatures on crystal atomic composition, we correlated spatially-resolved optical and atomic composition measurements using spatially resolved x-ray photoelectron spectroscopy with systematically varied growth conditions on the same ZnGeN 2 films. The resultant elemental maps versus defect spectral energies and intensities suggest that cation antisite complexes (Zn Ge -Ge Zn ) versus isolated native point defects form preferentially and introduce mid-gap states that dominate electron-hole pair recombination. Complexing of Zn Ge and Ge Zn antisites manifests as disorder in the cation sub-lattice and leads to the formation of wurtzitic ZnGeN 2 as indicated by transmission electron microscopy diffraction patterns and x-ray diffraction (XRD) reciprocal space maps. Furthermore, these findings emphasize the importance of growth conditions to control cation place exchange.

42 ENGINEERING↗
DOE OSTI2021

Preferential Direction of Electron Transfers at a Dye–Metal Oxide Interface with an Insulating Fluorinated Self-Assembled Monolayer and MgO

Slowing non-desirable electron transfer reactions at metal oxide-dye interfaces is important for many technologies. Specifically, after an interfacial photoinduced charge separation event at a metal oxide-dye interface, it is critically important to limit the rate of electron transfer reactions back to sensitizers and to limit electron transfer reactions between the electrolyte and the metal oxide. Ruthenium-based dyes at metal oxide interfaces are widely used in many fields; however, these dyes often have poor surface insulation resulting in fast recombination kinetics with transition metal-based redox shuttles in an electrolyte. This work explores two semiconductor surface modification strategies designed to minimize recombination events of electrons in TiO 2 with oxidized redox shuttles using a fluorinated siloxane insulator (PFTS) and a metal oxide insulator (MgO) with a well-known Ru dye, B11. Additionally, the influence of these treatments on the rate and duration of photoinduced interfacial charge separation at the TiO 2 -dye interface was examined. The TiO 2 -dye-redox shuttle systems were studied via dye-sensitized solar cell current-voltage curve, incident photon-to-current conversion efficiency, small-modulated photovoltage transient, time-correlated single photon counting, and transient absorption spectroscopy measurements. MgO was found to decrease the rate of the electron transfer reaction from the metal oxide to the electrolyte, decrease the rate of the electron transfer reaction to the oxidized dye from TiO 2 , increase the electron transfer reaction rate from a reduced redox shuttle to an oxidized dye, and decrease the electron injection rate from the photoexcited dye to TiO2. Interestingly, PFTS was found to desirably improve on these rates relative to MgO or untreated TiO 2 . Here, a model based on electrostatic interactions is presented to explain the exceptional behavior of PFTS with DFT computational analysis of PFTS supporting this model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Charge collection in h -BN neutron detectors at elevated temperatures

Many of the neutron detector applications are in the environments with harsh conditions such as high temperatures. We report here the measurements of charge collection parameters of hexagonal boron nitride (h-BN) detectors at elevated temperatures, including the electron mobility-lifetime product (μτ) and surface recombination field (s/μ). It was found that μτ is increased, while s/μ is decreased as temperature increases. The temperature dependence of the surface recombination field (s/μ) revealed that electrons trapped in the surface states tend to thermally activate to the bulk region at higher temperatures with an activation energy of about 0.22 eV, leading to a reduction in the density of the charged surface states at elevated temperatures. Consequently, the charge collection efficiency is enhanced at elevated temperatures due to a reduced surface recombination field and increased electron mobility-lifetime product. The results suggested that h-BN neutron detectors are favorable for high temperature operation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Materials genome innovation for computational software (magics) center

Functional layered material (LM) architectures will dominate nanomaterials science in this century. We have developed theory, modeling, simulation, and software and data tools that enhance understanding and AI guide synthesis, enable characterization of complex structures, and improve capabilities in the predictive design and growth of LMs. Research at the Center has focused on: Computational synthesis and characterization: AI guided synthesis and experimental synthesis of stacked LMs with tailored properties via optimized chemical vapor deposition (CVD) growth and liquid-phase exfoliation; study defects, edges, grain boundaries, wrinkling of atomic layers and their effects on chemical, mechanical, electrical, and optical properties. Far-from-equilibrium processes: Joint experimental and simulation based probe of electronic processes with NAQMD and ultrafast X-ray free-electron laser (XFEL) and ultrafast electron diffraction (UED) facilities at Stanford. Experimentally validate NAQMD by ultrafast electron diffraction and X-ray spectroscopy studies of structural and excited state dynamics, shape fluctuations, and phonon dynamics. Scalable software: Simulation engines for desktop-to-exascale platforms using low-overhead, linear-scaling QMD algorithms; divide-conquer-recombine NAQMD with electronic excitations; extended-Lagrangian reactive molecular dynamics (RMD), machine learning (ML) based neural-network quantum molecular dynamics (NNQMD), and super-state accelerated molecular dynamics (AMD) and kinetic Monte Carlo codes; thermal and electrical transport software; and design 3D architectures of LMs with desired functionality using scalable software. Distribution of software and data, and training: Software and simulation-experimental data generated within the Center are distributed to the materials science community via Berkeley Materials Project (MP) framework. We have also organized three workshops for software distribution and training at USC (Nov. 2017, Mar. 2018) and Gaithersburg, MD (Nov. 2018) to train researchers, with the last one in focused on underrepresented groups, in collaboration with Howard University which is one of the largest HBCUs. The Center supported a total of 46 personnel and 6 undergraduate students. These include 14 faculty, 11 postdoctoral research associates, 20 graduate research assistants, and mentored 6 undergraduate students. This resulted in the publications of 63 research papers that include 46 publications on Reactive and Quantum Dynamics Simulations, 13 publications on Machine Learning for Quantum Materials, and 4 publications on Quantum Computing.

2D Materials↗
DOE OSTI2020

Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS 2 and WSe 2 monolayers

The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible for a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exciton, as well as its recombination mechanism mediated by impurities. The analysis provides thorough understanding of the energy and polarization of the zero-phonon indirect exciton resonance in the emission spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The critical role of hot carrier cooling in optically excited structural transitions

The hot carrier cooling occurs in most photoexcitation-induced phase transitions (PIPTs), but its role has often been neglected in many theoretical simulations as well as in proposed mechanisms. Here, by including the previously ignored hot carrier cooling in real-time time-dependent density functional theory (rt-TDDFT) simulations, we investigated the role of hot carrier cooling in PIPTs. Taking IrTe2 as an example, we reveal that the cooling of hot electrons from the higher energy levels of spatially extended states to the lower energy levels of the localized Ir–Ir dimer antibonding states strengthens remarkably the atomic driving forces and enhances atomic kinetic energy. These two factors combine to dissolute the Ir–Ir dimers on a timescale near the limit of atomic motions, thus initiating a deterministic kinetic phase transition. We further demonstrate that the subsequent cooling induces nonradiative recombination of photoexcited electrons and holes, leading to the ultrafast recovery of the Ir–Ir dimers observed experimentally. These findings provide a complete picture of the atomic dynamics in optically excited structural phase transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pb dimerization greatly accelerates charge losses in MAPbI 3 : Time-domain ab initio analysis

Metal halide perovskites constitute a new type of semiconducting materials with long charge carrier lifetimes and efficient light-harvesting. The performance of perovskite solar cells and related devices is limited by nonradiative charge and energy losses, facilitated by defects. Combining nonadiabatic molecular dynamics and time-domain density functional theory, we demonstrate that charge losses depend strongly on the defect chemical state. By considering an extra Pb atom in CH 3 NH 3 PbI 3 , which is a common defect in lead halide perovskites, we investigate its influence on charge trapping and recombination. In a chemically inert form as a Pb interstitial, the extra Pb atom has only a mild influence on charge recombination. However, if the extra Pb atom binds to a native Pb atom to form a dimer, the charge trapping and recombination are greatly accelerated because the Pb-dimer creates a localized midgap trap state that couples strongly to the perovskite valence band edge. Holes disappear from the valence band two orders of magnitude faster than in the pristine perovskite and recombine with conduction band electrons one order of magnitude faster. The simulations identify the phonon modes involved in the nonradiative charge trapping and recombination and highlight the importance of rapid decoherence within the electronic subsystem for long carrier lifetimes. The detailed atomistic analysis of the charge trapping and recombination mechanisms enriches the understanding of defect properties and provides theoretical guidance for improving perovskite performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Rational Design of A Chemical Bath Deposition Based Tin Oxide Electron Transport Layer for Perovskite Photovoltaics

Chemical bath deposition is widely used to deposit SnO x as an electron transport layer in perovskite solar cells (PSCs). The conventional recipe uses thioglycolic acid (TGA) to facilitate attachments of SnO x particles onto the substrate. However, nonvolatile TGA has been reported to harm the operational stability of PSCs. In this work, we introduced a volatile oxalic acid (OA) as an alternative to TGA. OA, a dicarboxylic acid, functions as a chemical linker for the nucleation and attachment of particles to the substrate in the chemical bath. Moreover, OA can be readily removed through thermal annealing followed by a mild H 2 O 2 treatment, as shown by FTIR measurements. Synergistically, the mild H 2 O 2 treatment selectively oxidizes the surface of the SnOx layer, minimizing nonradiative interface carrier recombination. EELS (electron-energy-loss-spectroscopy) confirms that the SnO x surface is dominated by Sn 4+ , while the bulk is a mixture of Sn 2+ and Sn 4+ . This rational design of a CBD SnO x layer leads to devices with T85~1,500h, a significant improvement over the TGA-based device with T80~250h. Our champion device reached a power conversion efficiency of 24.6%. This work offers a rationale for optimizing the complex parameter space of CBD SnO x to achieve efficient and stable PSCs.

14 SOLAR ENERGY↗
DOE OSTI2024

A type-I van der Waals heterostructure formed by monolayer WS 2 and trilayer PdSe 2

Two-dimensional (2D) heterostructures, formed by stacking 2D semiconductors through the van der Waals force, have been extensively studied recently. However, the majority of the heterostructures discovered so far possess type-II interfaces that facilitate interlayer charge separation. Type-I interfaces, on the other hand, confine both electrons and holes in one layer, which is beneficial for optical applications that utilize electron–hole radiative recombination. So far, only a few type-I 2D heterostructures have been achieved, which has limited the construction of multilayer heterostructures with sophisticated band landscapes. Here, we report experimental evidence of a type-I interface between monolayer WS 2 and trilayer PdSe 2 . Two-dimensional PdSe 2 has emerged as a promising material for infrared optoelectronic and other applications. We fabricated the heterostructure by stacking an exfoliated monolayer WS 2 flake on top of a trilayer PdSe 2 film, synthesized by chemical vapor deposition. Photoluminescence spectroscopy measurements revealed that the WS 2 exciton peak is significantly quenched in the heterostructure, confirming efficient excitation transfer from WS 2 to PdSe 2 . Femtosecond transient absorption measurements with various pump/probe configurations showed that both electrons and holes photoexcited in the WS 2 layer of the heterostructure can efficiently transfer to PdSe 2 , while neither type of carriers excited in PdSe 2 can transfer to WS 2 . These experimental findings establish a type-I band alignment between monolayer WS 2 and trilayer PdSe 2 . Furthermore, our results further highlight PdSe 2 as an important 2D material for constructing van der Waals heterostructures with emergent electronic and optoelectronic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma

Etching of p-Si in 60 mTorr 10%Cl2/90%Ar Faraday-shielded inductively coupled high density plasmas was investigated under both ionassisted etching (IAE) and photoassisted etching (PAE) conditions. Real-time etching rates and after-etching Si surface chemical compositions were obtained by laser interferometry and vacuum-transfer x-ray photoelectron spectroscopy (XPS), respectively. Precisely controlled ion energy distributions (IEDs) were generated by applying pulsed negative DC bias on the conductive sample stage. Above a 36 eV threshold at a total flow rate of 250 SCCM, the IAE rate increased with the square root of the ion energy. In contrast to the DC bias, etching under RF bias did not exhibit a threshold ion energy because of the wide IED. XPS spectra revealed that the surface layer under PAE conditions had a significantly lower chlorine content, composed of only SiCl. Under IAE conditions, however, silicon dangling bonds (Si•), SiCl 2 , and SiCl 3 were found on the surface, in addition to SiCl, with a relative abundance of SiCl > SiCl 2 , and SiCl 3 . The absence of higher chlorides and Si• under PAE conditions suggested that vacuum ultraviolet photons and above threshold-energy ions interact with the surface very differently. By varying the duty cycle of the pulsed DC bias, it was found that the IAE rate scaled with the energetic ion dose, but only for low duty cycles. For higher duty cycles, the apparent IAE yield fell off with an increasing Cl coverage on the surface, as the duty cycle went up, which pointed to a negative synergy (antisynergism) between PAE and IAE as the explanation. This antisynergism was further supported by the observed decrease of the total etching rate with an increasing period of the pulsed DC bias. A plausible mechanism is that increasing the pulsing period causes more near-surface damage, creating more recombination centers that lead to a higher loss rate of electron-hole pairs through recombination, thereby reducing the PAE rate.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Polymer Solar Cells with 18.74% Efficiency: From Bulk Heterojunction to Interdigitated Bulk Heterojunction

The most popular approach to fabricating organic solar cells (OSCs) is solution processing a mixture of donor (D) and acceptor (A) materials into an active layer with a bulk heterojunction (BHJ) nanostructure. In this work, it is demonstrated that the interdigitated heterojunction (IHJ) is a more suitable nanostructure of the active layer for high-performance OSCs whereas it is a long standing challenge to realize well-defined IHJ structures. Here, a facile and versatile sequential solution processing method is developed to produce an IHJ nanostructure with power conversion efficiency reaching 18.74% (18.10% for BHJ the counterpart) by fabricating a donor film with nanopores created by a wax additive, sequentially casting the acceptor on top of infiltrating the nanopores. Compared to the BHJ, the IHJ structure with an interpillar distance within the exciton diffusion length can afford a large bulk D/A interface for efficient exciton dissociation with a minimized charge recombination while free electrons and holes can transport to the respective electrodes through more straightforward pathways, thus enhance performance. Furthermore, the D or A phase in the IHJ device contacts with only one electrode, which can prevent shunting between the anode and cathode and facilitate the industrial mass production of OSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Non-Oxidative Ethane Dehydrogenation in a Packed-Bed DBD Plasma Reactor

Abstract Plasma-assisted conversion of ethane (C 2 H 6 ) can produce value-added chemical building blocks using green electricity. Here we employ a simple packed-bed coaxial dielectric barrier discharge (DBD) reactor to convert C 2 H 6 at mild operating conditions unattainable by conventional thermocatalysis. Ethylene (C 2 H 4 ), acetylene (C 2 H 2 ), and methane (CH 4 ) are the main products along with small fractions of C 3 and C 4 hydrocarbons. Interestingly, the C 2 H 4 selectivity is primarily correlated to C 2 H 6 conversion, dominated by electron dissociation and recombination reactions irrespective of the dielectric properties of the packed bed material (SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , and BaTiO 3 ), packing material size, supplied power, and C 2 H 6 concentration. While a distortion of the electric field and discharge propagation results in varying dissipated power as materials change, the C 2 H 4 energy yield remains constant. The particle size appears to affect conversion mainly due to pressure alterations. Pd/SiO 2 catalyst can change the selectivity, favoring saturated species by expending hydrogen.

Engineering↗
DOE OSTI2023

Hybrid Heterostructures to Generate Long-Lived and Mobile Photocarriers in Graphene

We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor F 8 ZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS 2 or WS 2 few-layer flakes on a graphene film, followed by deposition of F 8 ZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of F 8 ZnPc/few-layer-MoS 2 /graphene, electrons excited in F 8 ZnPc can transfer to graphene and thus be separated from the holes that reside in F 8 ZnPc. By increasing the thickness of MoS 2 , these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm 2 V–1 s –1 . Graphene doping with mobile holes is also demonstrated with WS 2 as the middle layers. Furthermore, these artificial heterostructures can improve the performance of graphene-based optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Direct Conversion of Ethane to Oxygenates, Ethylene, and Hydrogen in a Noncatalytic Biphasic Plasma Microreactor

We selectively upgrade ethane (C 2 H 6 ) to ethanol (C 2 H 5 OH), methanol (CH 3 OH), and acetic acid (CH 3 COOH) in a catalyst-free, continuous, argon/water biphasic plasma microreactor. The water (H 2 O) evaporates and electron- dissociates into OH· radicals. OH· recombines with alkyl radicals, produced via electron dissociation of ethane, to generate the oxygenates that absorb into H 2 O. A plasma-assisted path, reminiscent of the low-temperature thermocatalytic ethane steam reforming, leads to significant H 2 coproduction. The gaseous stream also comprises CO 2 and C 2 H 4 . Up to 1.3 and 1 μmol min –1 of liquid C 2 H 5 OH and CH 3 OH are attained, respectively. Compared to CO 2 -assisted ethane plasma conversion, which produces many oxygenates with low selectivity, the carbon selectivity can range from >70% C 2 H 5 OH, CH 3 OH, and CH 3 COOH to 60% C 2 H 4 . Furthermore, the low carbon footprint, electrified, modular, intensified process using a reactive evaporation and separation plasma could pave the way for the valorization of underutilized shale gas resources in remote areas.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗