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Results for “ELECTRONIC SWITCH”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Voltage-induced magnetic domain evolution in a phase-change material

Applying voltage to metal–insulator transition (MIT) materials allows electrical actuation of the local electronic phase state. In MIT systems that have the electronic order coupled with the magnetic order, voltage switching of the electronic phase state can also enable the electrical manipulation of magnetic properties. In this work, we utilized x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) to investigate the control of magnetic domain configurations in ferromagnetic MIT electrical switches. For applied voltages above a threshold value, the XMCD-PEEM images show that the magnetic domains separate into two distinct regions: one with a high contrast (white/black), indicating well-defined micrometer-scale magnetic domains with a component of their magnetization aligned parallel/antiparallel to the x-ray helicity, and the other with different shades of intermediate contrast (gray). Significant changes in magnetic domain configurations upon voltage biasing were only observed in these gray regions. Furthermore, the voltage-induced magnetic domain separation was found to be bias polarity-dependent, with the gray regions expanding from the opposite sample edge when the applied voltage polarity was reversed. This polarity-dependent electrical control of magnetic domain configurations during the MIT switching opens alternative opportunities in memory applications for magnetic MIT switching materials.

42 ENGINEERING↗
NASA NTRS1982

Parallel-Access Alinement Network Using Barrel Switches

Practical version of parallel-access alinement network utilizes two barrel switches for interfacing N parallel memory modules with N parallel processing elements. Switches are interconnected where 17 memory ports (MP's) are connected to 17 processor ports (PP's). Network uses two electronic barrel switches to direct data flow in parallel data-processing system. Each switch can shift a multibit parallel input a predetermined number of places to left or right, end off, or end around in one clock-pulse.

Barnes, George H.↗
NASA NTRS1986

Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

Golomidov, Y. V.↗
NASA NTRS1980

Energy saver for industrial lighting

Electronic controller switches lights on or off in response to amount of sunlight available. Is application in offices and industrial installations where electrical energy is wasted by using artificial light in sunlit areas. Device utilizes electronic monitor that varies artificial lighting according to amount of sunlight in given area.

Arline, J.↗
DOE OSTI2025

Hexagonal Boron Nitride: Physical Properties, Hydride Vapor‐Phase Epitaxy Growth of Large‐Diameter Quasi‐Bulk Wafers and Applications

Hexagonal boron nitride ( h ‐BN), with its ultrawide bandgap and 2D structure, holds an immense promise for advanced semiconductor applications. Scaling bulk crystals to large‐diameter wafers, crucial for complex device fabrication, remains a challenge with high temperature, high pressure, and metal flux solution methods. To address this, recent efforts have focused on hydride vapor‐phase epitaxy (HVPE) for producing large diameter thick h ‐BN quasi‐bulk wafers, reaching hundreds of micrometers. These HVPE‐grown quasi‐bulk crystals exhibit excellent c ‐axis long‐range order. Notably, the in‐plane mobility‐lifetime products for both electrons and holes surpass 10 −4 cm 2 V −1 , which are two orders of magnitude greater than the out‐of‐plane (vertical) values, highlighting the potential for high‐performance devices leveraging superior lateral transport. Lateral detectors fabricated from 100 μm thick B‐10 enriched h‐ BN wafers have achieved a record 60% thermal neutron detection efficiency. Based on its physical properties, h‐ BN appears to be an outstanding material of choice for light‐triggered electronic power switches capable of supporting high ‐ voltage and high ‐ power operations. These recent advancements in large‐diameter h ‐BN quasi‐bulk crystal growth, enabled by HVPE, pave the way for applications spanning deep UV photonics, high‐power electronics, high‐efficiency neutron detection, and quantum information technologies, establishing h ‐BN as both a versatile active semiconductor and an ideal substrate.

Jiang, Hongxing [Department of Electrical and Comp↗
NASA NTRS1973

A study of power conditioning and power distribution and components

A comprehensive simulation and analysis performed on the operation of the regulator part of the Charger/Battery/Regulator Module (CBRM) are detailed. The CBRM is utilized as an integral component of the Skylab/Apollo Telescope Mount (ATM) electrical power system and contains a switching mode electronic regulator. Implementing circuit analysis techniques, pertinent voltages and currents are calculated; these, in turn, are incorporated into the regulator system study. Investigation of the turn-on and turn-off times associated with the switching circuitry is performed and an examination is made on these calculations. A simulation model computer program is utilized to generate graphs that relate various CBRM parameters to one another.

Horton, H. M.↗
DOE OSTI2025

A limit to strong shock behavior in the dynamic response of matter at pressure

Solids under high pressures experience a series of regimes, where their microstructure adapts to the applied compression and these key transitions are discussed in this paper. As strain increases, new forces emerge at extreme pressures. A previous study introduced the concept of the weak shock limit (WSL), at which the ambient theoretical shear strength is overcome. Above the WSL, further deformation under strong shock conditions results in electrons occupying higher energy levels as strain increases. As pressure rises further, shock melting occurs in the material and at around three times this melting pressure, the strong shock limit is reached where the driving physics under pressure switches, with electrons forced into higher energy states. This leads to significant reduction in their compressibility due to changes in electronic structure and developing electron degeneracy pressures. A derivation for conditions at this state is presented, which indicates that a dependence of the threshold pressure on the free electron number density defines the limit observed. This correlation suggests that ambient material moduli govern material compression up to nearly 50% strain. These observations show that models should account for different behaviors as dominant physics changes in each regime accessed as shock pressure increases.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Turbulent Heating in Collisionless Low-beta Plasmas: Imbalance, Landau Damping, and Electron–Ion Energy Partition

An understanding of how turbulent energy is partitioned between ions and electrons in weakly collisional plasmas is crucial for modeling many astrophysical systems. Using theory and simulations of a four-dimensional reduced model of low-beta gyrokinetics (the “Kinetic Reduced Electron Heating Model”), we investigate the dependence of collisionless heating processes on plasma beta and imbalance (normalized cross-helicity). These parameters are important because they control the helicity barrier, the formation of which divides the parameter space into two distinct regimes with remarkably different properties. In the first, at lower beta and/or imbalance, the absence of a helicity barrier allows the cascade of injected power to proceed to small (perpendicular) scales, but its slow cascade rate makes it susceptible to significant electron Landau damping, in some cases leading to a marked steepening of the magnetic spectra on scales above the ion Larmor radius. In the second, at higher beta and/or imbalance, the helicity barrier halts the cascade, confining electron Landau damping to scales above the steep “transition-range” spectral break, resulting in dominant ion heating. We formulate quantitative models of these processes that compare well to simulations in each regime, and combine them with results of previous studies to construct a simple formula for the electron–ion heating ratio as a function of beta and imbalance. This model predicts a “winner takes all” picture of low-beta plasma heating, where a small change in the fluctuations' properties at large scales (the imbalance) can cause a sudden switch between electron and ion heating.

Interplanetary turbulence↗
NASA NTRS1990

Switching Matrix For Optical Signals

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

Grove, Charles H.↗
NASA NTRS1993

System for simultaneously loading program to master computer memory devices and corresponding slave computer memory devices

A bus programmable slave module card for use in a computer control system is disclosed which comprises a master computer and one or more slave computer modules interfacing by means of a bus. Each slave module includes its own microprocessor, memory, and control program for acting as a single loop controller. The slave card includes a plurality of memory means (S1, S2...) corresponding to a like plurality of memory devices (C1, C2...) in the master computer, for each slave memory means its own communication lines connectable through the bus with memory communication lines of an associated memory device in the master computer, and a one-way electronic door which is switchable to either a closed condition or a one-way open condition. With the door closed, communication lines between master computer memory (C1, C2...) and slave memory (S1, S2...) are blocked. In the one-way open condition invention, the memory communication lines or each slave memory means (S1, S2...) connect with the memory communication lines of its associated memory device (C1, C2...) in the master computer, and the memory devices (C1, C2...) of the master computer and slave card are electrically parallel such that information seen by the master's memory is also seen by the slave's memory. The slave card is also connectable to a switch for electronically removing the slave microprocessor from the system. With the master computer and the slave card in programming mode relationship, and the slave microprocessor electronically removed from the system, loading a program in the memory devices (C1, C2...) of the master accomplishes a parallel loading into the memory devices (S1, S2...) of the slave.

Hall, William A.↗
DOE OSTI2024

Improved Beam Loss Accounting with Fast Data Acquisition (DAQ) Chassis

Identifying the source of beam loss events in the CE-BAF accelerator can be a challenging task. However, with our new prototype system, this task becomes more effi-cient. The system, developed in the fall of 2022, utilizes a dispersive beam position monitor (BPM) and the exist-ing switched electrode electronics BPM hardware. Previ-ously a commercial off-the-shelf data acquisition (DAQ) system was employed to capture BPM wire signals at a sample rate of 20 kS/s. The fast shutdown signal triggered the system, which disables the beam at the injector. Analysis of beam position and energy variation before a beam loss event was used to determine if the beam loss event was associated with an energy transient. The proto-type system, implemented using National Instruments hardware and LabVIEW® software, relied on a software trigger. Manual post-processing was required to ascertain whether the fault was due to an un-tripped cavity with a gradient or phase transient. This work focuses on deploying a Fast DAQ Chassis to monitor BPM hardware in real time and during beam loss events. This system was originally developed and in-stalled in CEBAF to monitor the time-domain RF control signals in the legacy analog RF systems. This technology was leveraged to also monitor BPM signals. As the new system employs a hardware trigger, developing tools to automatically identify faults linked to energy transients unrelated to cavity faults will be straightforward. This paper will discuss the project's initial updates, underlin-ing the crucial role of each member of our team in this achievement

Tiskumara, J.↗