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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A study of Cell Cracks Formation During Freight Shipping : Monitoring Shock and Temperature in Real-Time & Assessing Damages With Pre and Post-Transit Characterizations of PV Modules

The solar photovoltaic (PV) industry often experiences module damage during transportation. PV modules stacked horizontally and strapped on wooden pallets may develop failures impacting their efficiency (glass shattering, cracks, frame indentation, etc.), especially when modules are not packed by professionals. The appearance of failures during the shipment from one laboratory to another can be detrimental to research studies. In this study, we tested a reusable plastic pallet designed to ship modules vertically. Five technologies of commercial PV modules were shipped together from Arizona to Florida including: glass/glass bifacial modules (framed and frameless), glass/transparent backsheet bifacial modules and glass/white backsheet modules (framed). Each module technology has a different physical size. Some modules had pre-existing cell-cracks allowing for the study of cell-crack formation and propagation during shipment. Dark current-voltage (I-V), light I-V and electroluminescence characterization were performed before and after shipment. A datalogger was used to monitor shocks and ambient temperature throughout the shipment and identify when the modules were more susceptible to damage. The modules were tilted upon receipt and the pallet were damaged but with no shattered modules. Time series shock data provided by the datalogger were used to determine potential responsible events. Our results reveal a few new post-transportation cracks for some modules. Modules parameters before and after shipment are also compared regarding the module constructions and their position in the pallet.

14 SOLAR ENERGY↗
DOE OSTI2020

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗
DOE OSTI2025

Novel Solar Panel Defect Detection Hardware and Defect Analysis Software (CRADA Final Report)

The CRADA work involved 1) the development of a machine learning software architecture to automatically detect defects within Electroluminescence images of solar panels, and 2) demonstrations of the usefulness of UV Fluorescence (UVF) defect detection for a wide variety of defect types across many different solar panel technologies with different field or environmental chamber histories.

14 SOLAR ENERGY↗
DOE OSTI2025

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie↗
DOE OSTI2021

Highly Efficient Pure‐Blue Light‐Emitting Diodes Based on Rubidium and Chlorine Alloyed Metal Halide Perovskite

Abstract Perovskite light‐emitting diodes (PeLEDs) are promising candidates for display and solid‐state lighting, due to their tunable colors, high conversion efficiencies, and low cost. However, the performance of blue PeLEDs is far inferior to that of the near‐infrared, red, and green counterparts. Here, the fabrication of pure‐blue PeLEDs with an emission peak at 475 nm, a peak external quantum efficiency of 10.1%, and a maximum luminance of 14 000 cd m −2 is demonstrated by tailoring the compositions of perovskites. The pure‐blue electroluminescence is achieved by simultaneous addition of rubidium and chlorine ions into CsPbBr 3 and incorporation of phenylethylammonium chloride forms quasi‐2D hybrid perovskites. The combination of these composition engineering results in blueshifted emissions without reducing the quantum yield. The judicious alloying is shown to be critical to result in the better morphology with suppressed current leakage and enhanced light outcoupling.

Yang, Yang↗
DOE OSTI2022

Donor End-Capped Alkyl Chain Length Dependent Non-Radiative Energy Loss in All-Small-Molecule Organic Solar Cells

A critical bottleneck for further efficiency breakthroughs in organic solar cells (OSCs) is to minimize the non-radiative energy loss (eΔV nr ) while maximizing the charge generation. With the development of highly emissive low-bandgap non-fullerene acceptors, the design of high-performance donors becomes critical to enable the blend with the electroluminescence quantum efficiency to approach or surpass the pristine acceptor. Herein, by shortening the end-capped alkyl chains of the small-molecular donors from hexyl (MPhS-C6) to ethyl (MPhS-C2), the material obtained aggregation that was insensitive to thermal annealing (TA) along with condensed packing simultaneously. The former leads to small phase separation and suppressed upshifts of the highest occupied molecular orbital energy level during TA, and the latter facilitates its efficient charge-transport at aggregation-less packing. Hence, the ΔV nr decreases from 0.242 to 0.182 V, from MPhS-C6 to MPhS-C2 based OSCs. An excellent PCE of 17.11% is obtained by 1,8-diiodoctane addition due to almost unchanged high J sc (26.6 mA cm –2 ) and V oc (0.888 V) with improved fill factor, which is the record efficiency with the smallest energy loss (0.497 eV) and ΔV nr (0.192 V) in all-small-molecule OSCs. Finally, these results emphasize the potential material design direction of obtaining concurrent TA-insensitive aggregation and condensed packing to maximize the device performances with a super low ΔV nr .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic-scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I–V characteristics, and high-resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.

dislocation defects↗
DOE OSTI2023

Plasmon-Assisted Directional Infrared Photoluminescence of HgTe Nanocrystals

HgTe nanocrystals offer a unique spectral tunability with both absorption and emission covering the near and mid-infrared as well as the THz window. Nevertheless, a very limited amount of work is dedicated to electroluminescence from this material. An efficient diode not only requires designing a structure that achieves a high electrical efficiency (i.e., efficient electron and hole injections), but also finding a way to efficiently extract the emitted photons. The shift from visible to infrared certainly demands revisiting the strategies proposed for shorter wavelengths (microlens arrays). Here, a metallic grating is used to enhance the photoluminscence signal up to a factor of 4 while enabling directionality in the emission, which is driven by the grating period.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lateral Confinement in 2D Nanoplatelets: A Strategy to Expand the Colloidal Quantum Engineering Toolbox

Among colloidal nanocrystals, 2D nanoplatelets offer a unique set of properties with exceptionally narrow luminescence and low lasing thresholds. Furthermore, their anisotropic shape expands the playground for the complex design of heterostructures where spectra but also scattering rates can be engineered. A challenge that still remains is to combine shell growth which makes NPLs stable, with spectral tunability. Indeed, most reported shelled nanoplatelets end up being red emitters due to a loss of quantum confinement. Here, the combination of both lateral and in-plane confinements within a single heterostructure is explored. A CdS/CdSe/CdS/CdZnS core–crown–crown shell structure that enables yellow emission is grown and that is responsive to a large range of excitation including visible photons, X-ray photons, electron beams, and electrical excitations. k.p simulations predict that emission tunability of up to several 100 s of meV can be obtained in ideal structures. This material also displays stimulated emission resulting from bi-exciton emission with a low threshold. Once integrated into an LED stack, this material is compatible with sub-bandgap excitation and exhibits high luminance. Scaling of the electroluminescence properties by downsizing the pixel size is also investigated.

2D materials↗
DOE OSTI2022

Cesium Lead Halide Perovskite Nanocrystals Assembled in Metal–Organic Frameworks for Stable Blue Light Emitting Diodes

All inorganic cesium lead trihalide nanocrystals are promising light emitters for bright light emitting diodes (LEDs). Here we demonstrate CsPb(BrCl) 1.5 nanocrystals in metal-organic frameworks (MOF) thin films to achieve bright and stable blue LEDs. The lead metal nodes in the MOF thin film react with Cs-halide salts, resulting in 10~20 nm nanocrystals. This is revealed by X-ray scattering and transmission electron microscopy. Employing the CsPbX 3 - MOF thin films as emission layers, bright deep blue and sky-blue LEDs are demonstrated that emit at 452 nm and 476 nm respectively. The maximum external quantum efficiencies of these devices are 0.72% for deep blue LEDs and 5.6% for sky blue LEDs. More importantly, the device can maintain 50% of its original electroluminescence (T 50 ) for 2.23 hours when driving at 4.2V. Detailed optical spectroscopy and time-of-flight secondary ion mass spectroscopy suggest that the ion migration can be suppressed that maintains the emission brightness and spectra. Our study provides a new route for fabricating stable blue light emitting diodes with all-inorganic perovskite nanocrystals.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Engineering Perovskite Precursor Inks for Scalable Production of High‐Efficiency Perovskite Photovoltaic Modules

Abstract Blade coating of perovskite solar cells (PSCs) and modules has progressed considerably toward the industrial production of perovskite photovoltaics. Developing stable perovskite precursors is critical for achieving uniform coating over large areas. Here, the engineering of a perovskite precursor solution consisting of 2‐methoxyethanol (2‐Me) and 1,3‐dimethyl‐imidazolidinone (DMI) with superior intermediate phase stability that enables scalable production of efficient perovskite solar modules is reported. With this perovskite precursor solution, uniform and pinhole‐less perovskite film is deposited over a large area of > 100 cm 2 and higher‐efficiency PSCs and modules are obtained. The best‐performing unit cell and module with n‐i‐p configuration reach power conversion efficiencies of 23.4% and 20.1%, respectively. Additionally, a series of non‐destructive metrology methods, such as spectroscopic ellipsometry, hyperspectral photoluminescence, electroluminescence, and laser beam‐induced current mapping, are employed to assess and guide the development the blade‐coated perovskite modules. This results show that rational engineering of precursor inks for blade coating is promising for the scalable production of efficient perovskite solar modules.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Performance and durability of electrically conductive tape for shingled Si heterojunction technology cells

We report electrically conductive tape (ECT) was characterized and used to assemble shingled cell strings at low temperature to achieve high reliability Pb- and Ag-free interconnections. The volume resistivity for two considered ECTs are 0.13 ± 0.06 mΩ·cm and 0.47 ± 0.20 mΩ·cm and specific contact resistances, 6.85± 2.00 mΩ·cm 2 and 6.30 ± 0.37 mΩ·cm 2 using the emerging IEC 62788-8-1 Technical Specification for assessment of electrically conductive adhesives (ECA). Durability and performance of the technology in glass–glass mini modules were evaluated with temperature cycling, damp heat testing, and combined-accelerated stress testing (CAST). Through temperature cycling (-40°C to 85°C) applying five times the mini module short-circuit current in forward bias and in the multi climate CAST protocol, there was negligible degradation of fill factor after replacing connectors at the modules' cable leads; however, CAST resulted in short circuit current loss attributed to degradation in light collection by the cells, not the ECT. The IEC 61215-2 85°C, 85% relative humidity damp heat testing showed susceptibility of the HJT cells to effects of humidity in the electroluminescence intensity around the module perimeter that degraded power performance by 4% (relative). Contrasting the IEC 61215-2 qualification testing-based damp heat testing with CAST, factors such as the optical stress of CAST may precipitate the degradation of the modules whereas the humidity levels and duration of IEC 61215-2 damp heat testing may lead to excessive levels of humidity diffused into the modules, potentially resulting in degradation that is unrepresentative of the field.

14 SOLAR ENERGY↗
DOE OSTI2026

UV-Induced Degradation and Associated Metastability in TOPCon Photovoltaic Modules: Understanding Kinetics and Cell Variance

Tunnel oxide passivated contact (TOPCon) silicon photovoltaic (PV) modules are dominating the PV market, but they may be susceptible to degradation under ultraviolet (UV)-containing light. Quantifying the impacts of UV-induced degradation (UVID) is complicated by an associated metastability causing further degradation under dark storage and rapid recovery under sunlight. Here, we study modules that have -2.3% to -3.2% nonrecoverable UVID loss after 60 kWh/m2 dose of 340 nm light and additional recoverable loss under dark storage. We use in situ electroluminescence (EL) imaging to characterize the post-UVID metastability at the module level. The cell-by-cell dark degradation and recovery kinetics span a wide range from +6% to -70% changes in EL intensity after 520 h of dark storage, which returns to +- 4% of the initial post-UVID EL intensity after illumination. The kinetics follow double exponential rates with dark storage degradation time constants of 345 and 45 h, and UV light recovery time constants of 5 min and 36 s. We propose that this is consistent with prior reports of kinetics for light-soaking metastability in Al2O3 passivation. Finally, we further show that cells having high UVID also have injection-dependent effective carrier lifetimes and significant intra-cell variance, suggesting possible origins of processing inconsistency.

14 SOLAR ENERGY↗
DOE OSTI2026

Evidence of Polarization‐Type Potential‐Induced Degradation (PID‐p) in the Field and Investigation of the Recovery Mechanism on Bifacial p ‐PERC Modules

This study investigates the polarization-type potential-induced degradation (PID-p) of bifacial glass/glass p-type passivated emitter rear contact (p-PERC) modules in the field and their recovery behavior. Modules were installed with three mounting configurations providing different albedo conditions. System voltage (–600, –1500, and +1500 V) was applied to the cell circuits, with respect to the grounded module frames. No degradation was observed for positively biased modules, but PID-p was identified on the rear side when cells are negatively biased, with maximum power dropping during the first days and stabilizing at values up to 8% loss. Electroluminescence images revealed a variation of the cells' PID-p susceptibility within a module. Three parameters were shown to impact the degradation rate: rear albedo light, voltage, and wetness conditions. Degraded modules were recovered either by (1) a positive bias (+1500 V), (2) outdoor illumination with the front side facing sun, (3) outdoor illumination with the rear side facing sun, or (4) dark storage. A recovery pattern was identified with I–V parameters decreasing to a local minimum before increasing to full recovery. The proposed mechanism is based on the band bending at the rear p-type Si/AlO x/SiN x interface, going from inversion to depletion and accumulation states. Full recovery was achieved in 2–7 h for the modules recovered with the rear side facing sun, four to eight nights for the modules positively biased at night, and 10–20 days for the modules with the front side facing sun. Dark storage showed slower recovery rates as I–V parameters were not improving even after 1 month. Here, the recovery rates were correlated with the net Coulombs transferred during the preceding PID stress: When more Coulombs are transferred during the degradation, the extent of degradation is greater, leading to slower recovery rates.

14 SOLAR ENERGY↗
DOE OSTI2020

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Epitaxially regrown electrically pumped photonic crystal surface-emitting lasers (PCSELs) emitting near 2 and 2.6 μm are designed, fabricated, and characterized. A high-index-contrast photonic crystal layer is incorporated into the GaSb-based laser heterostructure by air-hole-retaining epitaxial regrowth. A square lattice of triangular holes is etched in the top waveguide core layer of the incomplete laser heterostructure. The nanopatterned surface is subsequently cleaned and regrown with AlGaAsSb p-cladding material. Transmission electron microscopy studies demonstrate uniform regrowth over the nanopatterned GaSb surface. The selected regrowth regimes yield a buried 2D array of elongated air-holes. The diode PCSELs based on moderately etched nanopatterns demonstrate band-edge lasing near 2 μm up to room temperatures. The cascade diode PCSELs operate near 2.6 μm with minimum threshold current densities of about 500 A cm -2 achieved at 180 K. The devices generate mW level output in narrow divergence beam emitted from the window in substrate contact. The angle-resolved electroluminescence measurements reveal a four-sub-band band structure with an apparent photonic bandgap corresponding to the buried high-index-contrast square photonic crystal layer. Finally, the PCSELs made of heterostructures supporting two modes in the vertical direction demonstrate two sets of sub-bands showing anti-crossing-like interaction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Degradation of Edge-Defined Film-Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years

Thin silicon (< 100 μm) adoption can provide significantly lower cost. Kerfless technologies provide thin wafers while preventing material from being wasted. Understanding how this family of processing influences module reliability is important. A set of four edge-defined film-fed growth (EFG) silicon modules from a ten-module system in Florida is measured after 22 years of exposure. Power loss rates of 0.58–0.78% year -1 are measured for three modules, while a rate of 1.32% is measured for a module with severe delamination and corrosion. Short-circuit current degrades between 10.7% and 13.1% for all modules. Further, the losses are primarily optical and recombination based; however, series and shunt resistance effects play a non-negligible role. Pre-existing recombination losses exist but are exacerbated via degradation. Optical losses in short-circuit current are due in part to encapsulant yellowing. Electroluminescence (EL) images display the effects of processing on bulk quality by clearly showing lines of alternating brightness along the wafer length. To the authors’ knowledge, this is the first article displaying suns–V OC data, effective lifetime versus excess carrier density data, and module EL images for EFG silicon-based modules.

36 MATERIALS SCIENCE↗