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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Polarized imaging of visible synchrotron emission from runaway electron plateaus in DIII-D

A new approach to estimate the pitch angle of highly energetic postdisruption runaway electrons is presented by imaging the polarized runaway electron synchrotron emission. The vertical to horizontal polarization ratio is found to range between 3 and 14 in image-average studies looking at repeated shots as well as the polarization in a single discharge. Numerical studies with guiding center and full orbit simulations performed with the SOFT and KORC codes are given and compared to the experiment. The pitch angle evolution analyzed using a 1D impurity diffusion model in combination with kinetic simulations is also presented. Furthermore, these studies find agreement in the magnitude of the pitch angle, but not in the temporal rate of change of pitch angle. The measured pitch angle evolution timescale of order 50 ms falls between a modeled timescale of 20 ms in an equilibrium model and >>100 ms in a nonequilibrium model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography Using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition

Amorphous zinc-imidazolate (aZnMIm) resists show potential to meet the demands for next-generation high-numerical aperture (high-NA) metal-containing extreme ultraviolet (EUV) resist materials, given their ease of deposition by atomic/molecular layer deposition (ALD/MLD) at thicknesses of 20 nm and below. Here, this study demonstrates that aZnMIm thin films, previously identified as high-resolution electron beam resists, can also function as negative-tone EUV photoresists. Water development achieves high sensitivity (5 mJ/cm 2 ) but leaves significant residue, while acetic acid development results in poor contrast. A hybrid approach─water followed by acetic acid─enables residue-free development with a sensitivity of 181 mJ/cm 2 . Dry development using 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH) is also possible but shows lower sensitivity (375 mJ/cm 2 ) compared to wet development methods. EUV photoelectron spectroscopy (PES), reflectometry/EUV absorption, total electron yield (TEY), residual gas analysis (RGA), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to investigate the effects of EUV irradiation on aZnMIm resists. Reflectometry experiments reveal an aZnMIm EUV absorption coefficient of 6.2 μm –1 , while PES and TEY analyses show that, compared to poly(4-hydroxystyrene) (PHS), a polymer-based reference resist, aZnMIm emits more primary and secondary electrons but generates fewer slow electrons relative to its primary electron emission; its total electron yield is similar to that of poly(methyl methacrylate) (PMMA) resists. When exposed to EUV, aZnMIm predominantly outgasses H 2 , as determined by RGA. TOF-SIMS measurements demonstrate that high-dose EUV exposure only partially fragments the 2-methylimidazole (2MIm) organic linkers, unlike high-dose electron beam exposure, which is known to completely degrade them. Additionally, aZnMIm resists show promise for potential beyond EUV lithography (BEUVL) due to the presence of Zn, which provides higher sensitivity at a wavelength of 6.7 nm compared to other metal ions, such as Sn, that are currently used in the best-performing EUV metal–organic resists. TEY measurements demonstrate that aZnMIm emits nearly twice as many electrons as PHS at 6.7 nm. The BEUV TEY of aZnMIm also surpasses that of PMMA, poly(pentafluorostyrene), and poly(4-iodostyrene), with the latter two being known for their high EUV TEYs. This work provides insight into zeolitic imidazolate framework (ZIF)-based EUV and BEUV resists and highlights their potential for both wet and dry development.

lithography↗

Study of few-electron backgrounds in the LUX-ZEPLIN detector

The LUX-ZEPLIN (LZ) experiment aims to detect rare interactions between dark matter particles and xenon. Although the detector is designed to be the most sensitive to GeV/𝑐 2 –TeV/𝑐 2 weakly interacting massive particles (WIMPs), it is also capable of measuring low-energy ionization signals down to a single electron that may be produced by scatters of sub-GeV/𝑐 2 dark matter. The major challenge in exploiting this sensitivity is to understand and suppress the ionization background in the few-electron regime. We report a characterization of the delayed electron backgrounds following energy depositions in the LZ detector under different detector conditions. In addition, we quantify the probability for photons to be emitted in coincidence with electron emission from the high voltage grids. We then demonstrate that spontaneous grid electron emission can be identified and rejected with a high efficiency using a coincident photon tag, which provides a tool to improve the sensitivity of future dark matter searches.

Akerib, D. S. [SLAC National Accelerator Laborator↗

An expanded kinetics model describing injector region desorption

During the initial stages of electron beam injection, absorbed or entrained material can be released into the nascent beam pulse by thermal desorption or electron beam impact. These processes, and subsequent ionization and dissociation, are examined assuming a prototypical temporal beam pulse. An expanded set of kinetic equations that includes thermal desorption, electron-stimulated ion emission, electron impact dissociation, electron impact ionization, and thermal decomposition of adsorbed water molecules is developed. Estimates of the three most important ionized species H 2 O + , H + and OH + are provided for typical injector conditions. Electron impact dissociative ionization of neutral H 2 O is the dominant source of H + under these conditions. Since the abundance of thermally desorbed neutral H 2 O has an exponential rate, the production of H+ is likewise controlled by this exponential desorption rate. Thus thermal management of the confining walls could suppress proton production in the injector region. Thermal decomposition of H 2 O will not be a contributing physical process in the injector region on time scales less than a μs. The formalism is sufficiently flexible to include entrained hydrogen.

42 ENGINEERING↗

1D EDIPIC

EDIPIC codes were developed for simulation of kinetic effects in low-temperature plasmas. They can be used for simulation of plasmas in electrostatic approximation and include many atomistic and plasma-surface interaction processes needed for simulations of low temperature plasmas. These codes include a detailed model of secondary electron emission induced by electrons and ions. The Monte-Carlo model of electron-neutral collisions and the Langevin model of Coulomb collisions for electrons are also implemented.

Sydorenko, Dmytro↗

EDIPIC-2D

EDIPIC codes were developed for simulation of kinetic effects in low-temperature plasmas. They can be used for simulation of plasmas in electrostatic approximation and include many atomistic and plasma-surface interaction processes needed for simulations of low temperature plasmas. These codes include a detailed model of secondary electron emission induced by electrons and ions. The Monte-Carlo model of electron-neutral collisions and the Langevin model of Coulomb collisions for electrons are also implemented.

Sydorenko, Dmytro↗

Stimulation of isoprene emissions and electron transport rates are a key mechanism of thermal tolerance in the tropical species Vismia guianensis

Tropical forests absorb large amounts of atmospheric CO 2 through photosynthesis, but high surface temperatures suppress this absorption while promoting isoprene emissions. While mechanistic isoprene emission models predict a tight coupling to photosynthetic electron transport (ETR) as a function of temperature, direct field observations of these phenomenon are lacking in the tropics and are necessary to assess the impact of a warming climate on global isoprene emissions. In this paper, we demonstrate that in the early successional species Vismia guianensis in the central Amazon, ETR rates increased with temperature in concert with isoprene emissions, even as stomatal conductance ($g _s$) and net photosynthetic carbon fixation ($P_n$) declined. We observed the highest temperatures of continually increasing isoprene emissions yet reported (50°C). While $P_n$ showed an optimum value of 32.6 ± 0.4°C, isoprene emissions, ETR, and the oxidation state of PSII reaction centers (q L ) increased with leaf temperature with strong linear correlations for ETR (ρ = 0.98) and q L (ρ= 0.99) with leaf isoprene emissions. In contrast, other photoprotective mechanisms, such as non-photochemical quenching (NPQ), were not activated at elevated temperatures. Inhibition of isoprenoid biosynthesis repressed $P_n$ at high temperatures through a mechanism that was independent of stomatal closure. While extreme warming will decrease $g_s$ and $P_n$ in tropical species, our observations support a thermal tolerance mechanism where the maintenance of high photosynthetic capacity under extreme warming is assisted by the simultaneous stimulation of ETR and metabolic pathways that consume the direct products of ETR including photorespiration and the biosynthesis of thermoprotective isoprenoids. Our results confirm that models which link isoprene emissions to the rate of ETR hold true in tropical species and provide necessary "ground-truthing" for simulations of the large predicted increases in tropical isoprene emissions with climate warming.

54 ENVIRONMENTAL SCIENCES↗

Highly efficient photoelectric effect in halide perovskites for regenerative electron sources

Electron sources are a critical component in a wide range of applications such as electron-beam accelerator facilities, photomultipliers, and image intensifiers for night vision. We report efficient, regenerative and low-cost electron sources based on solution-processed halide perovskites thin films when they are excited with light with energy equal to or above their bandgap. We measure a quantum efficiency up to 2.2% and a lifetime of more than 25 h. Importantly, even after degradation, the electron emission can be completely regenerated to its maximum efficiency by deposition of a monolayer of Cs. The electron emission from halide perovskites can be tuned over the visible and ultraviolet spectrum, and operates at vacuum levels with pressures at least two-orders higher than in state-of-the-art semiconductor electron sources.

36 MATERIALS SCIENCE↗

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗

Collisional space-charge-limited current with monoenergetic velocity: From Child–Langmuir to Mott–Gurney

All theories coupling electron emission theories ultimately approach the space-charge-limited current (SCLC) in vacuum, given by the Child–Langmuir (CL) law, for sufficiently high voltage, or the Mott–Gurney (MG) law for finite electron mobility and high (but not infinite) voltage. These analyses demonstrate the presence of an SCLC regime that cannot be described by either CL or MG. Here, we derive an exact solution for SCLC for general electron mobility and nonzero velocity. We recover the traditional CL with nonzero initial velocity at high voltage. For low mobility (or infinite collision frequency), we derive corrections to the MG law that depend on the ratio of initial velocity to the product of collision frequency and gap distance or initial velocity to drift velocity for low and high voltage, respectively. Increasing collisionality decreases the correction to SCLC for nonzero velocity, indicating that these corrections are less important for low-mobility materials (e.g., solids) than high-mobility materials (e.g., air or vacuum). For a given gap distance (collision frequency), increasing the collision frequency (gap distance) increases the voltage necessary to make the gap appear more like vacuum. These results provide a generalized SCLC for both collisionality and initial velocity when assessing the transitions between electron emission mechanisms.

Physics↗

Amplified Spontaneous Emission from Electron–Hole Quantum Droplets in Colloidal CdSe Nanoplatelets

Two-dimensional cadmium selenide nanoplatelets (NPLs) exhibit large absorption cross sections and homogeneously broadened band-edge transitions that offer utility in wide-ranging optoelectronic applications. Here, we examine the temperature-dependence of amplified spontaneous emission (ASE) in 4- and 5-monolayer thick NPLs and show that the threshold for close-packed (neat) films decreases with decreasing temperature by a factor of 2-10 relative to ambient temperature owing to extrinsic (trapping) and intrinsic (phonon-derived line width) factors. Interestingly, for pump intensities that exceed the ASE threshold, we find development of intense emission to lower energy in particular provided that the film temperature is <= 200 K. For NPLs diluted in an inert polymer, both biexcitonic ASE and low-energy emission are suppressed, suggesting that described neat-film observables rely upon high chromophore density and rapid, collective processes. Transient emission spectra reveal ultrafast red-shifting with the time of the lower energy emission. Taken together, these findings indicate a previously unreported process of amplified stimulated emission from polyexciton states that is consistent with quantum droplets and constitutes a form of exciton condensate. For studied samples, quantum droplets form provided that roughly 17 meV or less of thermal energy is available, which we hypothesize relates to polyexciton binding energy. Polyexciton ASE can produce pump-fluence-tunable red-shifted ASE even 120 meV lower in energy than biexciton ASE. Finally, our findings convey the importance of biexciton and polyexciton populations in nanoplatelets and show that quantum droplets can exhibit light amplification at significantly lower photon energies than biexcitonic ASE.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Advanced Diagnostics of Broad Spectrum Multipactor

Multipactor is a resonance event between electron emission and RF fields causing exponential secondary electron re-emission growth when the secondary electron yield of the primary electron impact energy exceeds unity. Multipactor is a serious problem in vacuum electron devices (VEDs) such as particle accelerators, radars, electronic warfare systems, directed energy devices, and even Hall effect thrusters. It also poses an even greater threat to space communication systems where high power, multi-channel links are required. The UC Davis and SLAC team will conduct basic research to advance the fundamental understanding of multipactor physics by developing and carrying out full spectrum, radio frequency (RF) laboratory tests aimed at understanding both single and two-surface multipactor phenomena and at evaluating novel multipactor mitigation approaches for accelerator, space-based RF systems, as well as high power microwave (HPM) applications.

36 MATERIALS SCIENCE↗

AMPPED LDRD: Advanced Models of the Physics & Phenomena of Electrical Discharge.

This Laboratory Directed Research and Development (LDRD) project aimed at addressing an unmet need for physics-based models that enable prediction of electrical breakdown in the presence of high voltage gradients and real-world environments. This project focused on understanding coupled plasma-surface feedback phenomena critical to electrical discharge processes and design of breakdown voltages, breakdown times, and breakdown paths. New secondary electron emission and coupled plasma-surface measurement methods and models were developed. Highly reproducible discharge experiments were developed to provide current-voltage data as a function of time, and methods were developed to condition electrodes for predictable discharge. To assess plasma-surface feedback mechanisms, new surface physics capabilities, including measurement systems for local and global photoemission yield and ion-induced secondary electron emission yield were developed. Discharge models were developed to incorporate these yields for predicting discharge behavior to understand influence of surface physics on discharge current and time evolution, and methods to accelerate these simulations were demonstrated. A key finding was that the initiation process of a non-vacuum discharge appears highly dependent on photoemission at the cathode. Advanced diagnostics were developed, including spatial electrical field imaging, spectroscopy of plasmas, and high-speed imaging of discharge event s in metal and dielectric environments. These diagnostics and improved electrical models are a step toward enabling quantitative design margins, assurance of safety architectures, and implementation of novel materials and technologies for wide ranging energy and electronics applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Dimensional analysis on microscale gas breakdown with electric field nonuniformity and positive space charge effects

A dimensional method was employed to evaluate the microscale gas breakdown characteristics at atmospheric pressure, resulting in a universal breakdown curve applicable to different types of gases (e.g., Ar, Xe, Ne, and N2). As the gap distance decreases, the breakdown mode transitions from ion-induced secondary electron emission to the field emission regime. In the field emission regime, the positive space charge effect becomes more significant. We discovered that incorporating the positive space charge effect in the field emission regime can be achieved by modifying the local electric field enhancement factor β. Consequently, we propose an effective electric field enhancement factor, βeff, which scales linearly with β, to accurately reproduce the breakdown curve while considering the positive space charge effect. This proposed approach significantly simplifies the numerical model. Additionally, we examined the effects of gas pressure, gap distance, cathode properties (e.g., work function and secondary electron emission coefficient), and electric field nonuniformity.

Physics↗

Azimuthal and axial structures in 3D particle-in-cell simulation of Penning discharge

We report the results of a 3D particle-in-cell simulation of cylindrical Penning discharge with the axial magnetic field in the so-called reflex configuration, where the cathode and anti-cathode are biased to the same negative potential. The discharge is supported by thermal electron emission from the cathode. Electron and ion collisions, including ionization, are fully accounted for. The emphasis is on a specific regime in which the plasma potential at the center of the discharge is positive with respect to the chamber walls, serving as an anode. Spatial and temporal scales of the observed azimuthal and axial fluctuations and structures are characterized. It is suggested that azimuthal structures are caused by the dissipative gradient-drift instability. We find that the axial fluctuations related to the plasma-beam instabilities are weakly correlated with the azimuthal perturbations of the density, so that the azimuthal modes rotate as a whole and do not show any axial shear. The behavior of the electric potential is more involved, demonstrating intermittent standing wave and propagating structures in the axial direction that modulate the electron transport, producing the standing wave pattern (along the z-direction) in the radial electron flux.

3D PIC simulation of discharge↗

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Most properties of semiconductor devices are dominated by shallow impurities. However, deep defects often play an important role, for instance, in recombination processes or high field transport. While a variety of techniques are available to assess the density and energy levels of impurities, other properties, such as the recombination mechanisms of the defects, escape observation. We report on the direct measurement of hot electrons generated by trap-assisted Auger-Meitner recombination (TAAR) in GaN p-i-n diodes. By performing electron emission spectroscopy (EES) on diodes with surfaces activated to negative electron affinity by cesium, we observe the expected overflow electrons of p-i-n diodes under low current injection. However, when operating the devices at higher current densities, as low as ∼25 A/c⁢m 2 , we measure the emission of high-energy electrons. At variance with the observed hot electrons in light-emitting diodes (LEDs) using EES, the hot electrons generated in p-i-n diodes at our tested currents cannot be from eeh Auger-Meitner recombination due to the diodes' significantly lower carrier densities compared to those in LEDs. During our measurements, we observe the emission of accumulated electrons with energies ∼0.42 eV, ∼0.99 eV, ∼1.43 eV, and ∼2.32 eV above the conduction-band minimum (CBM) at various bias conditions, suggesting the existence of conduction-band features in GaN at these energies where electrons can be long-lived, such as satellite-valley minima and inflection points. We also measure incompletely relaxed hot electrons approaching energies 1.97 ± 0.13 eV and 2.94 ± 0.13 eV above the CBM, as the diodes are biased to high currents, suggesting at least some of the TAAR partaking defects have an energy level ≳1.97 eV and ≳2.94 eV away from either the conduction or valence band edges. Additionally, at our highest operating currents, we measure hot electrons with energies 3.28 ± 0.13 eV above the CBM, providing direct evidence of TAAR processes involving shallow impurities. This unexpected observation of TAAR in GaN p-i-n diodes spotlights the importance of further studies of defects in GaN and the necessity to incorporate the multi-phonon emission, radiative, and TAAR capture steps of defect-assisted recombination cycles into device modeling. Furthermore, this experiment demonstrates the applicability of the simplest semiconductor structures, p-i-n diodes, as a test bed to study the rich recombination physics of semiconductor materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗