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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Optical absorption in fused silica at elevated temperatures during 1.5-MeV electron irradiation

An experimental determination of the optical transmission of Corning 7940 UV and Suprasil 1 and 2 fused silica has been made during 1.5-MeV electron bombardment. The fused silica reached temperatures ranging from 150 to 1000 C. The Lewis Research Center dynamitron provided electron current densities which corresponded to a dose rate of 2.6 to 20 Mrad/sec. The irradiation induced absorption was measured at 215.0, 270.0, and 450.0 nm (2150, 2700, 4500 A). The length of each irradiation was sufficient so that an equilibrium between radiation induced coloration and high temperature annealing was reached. The experimental results indicate a significant optical absorption, with values of the induced absorption coefficient at 215.0 nm (2150 A) of 14.5 to 2.2/cm, at 270.0 nm (2700 A) of 9.7 to 3.0/cm and at 450.0 nm (4500 A) of 3.7 to 0.5/cm. This would make the use of fused silica as the separating wall material in the nuclear light bulb propulsion concept questionable.

Smith, A. B.↗
NASA NTRS1978

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗
NASA NTRS1973

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Nicoletta, C. A.↗
NASA NTRS1974

Temperature, illumination, and fluence dependence of current and voltage in electron irradiated solar cells

Empirical equations have been derived from measurements of solar cell photovoltaic characteristics relating light-generated current and open circuit voltage to cell temperature, intensity of illumination and 1-MeV electron fluence. Both 2-ohm-cm and 10-ohm-cm cells were tested over the temperature range from 120 to 470 K, the illumination intensity range from 5 to 1830 mW/sq cm, and the electron fluence range from 1 x 10 to the 13th to 1 x 10 to the 16th electrons/sq cm. The normalized temperature coefficient of the light generated current varies as the 0.18 power of the fluence for temperatures above approximately 273 K and is independent of fluence at lower temperatures. At 140 mW/sq cm, a power law expression was derived which shows that the light-generated current decreases at a rate proportional to the 0.153 power of the fluence for both resistivities. The coefficient of the expression is larger for 2-ohm-cm cells; consequently, the advantage for 10-ohm-cm cells increased with increasing fluence.

Faith, T. J.↗
NASA NTRS1973

Temperature, illumination and fluence dependence of current and voltage in electron irradiated solar cells

Emperical equations have been derived from measurements of solar cell photovoltaic characteristics relating light generated current, IL, and open circuit voltage, VO, to cell temperature, T, intensity of illumination, W, and 1 Mev electron fluence, phi both 2 ohm-cm and 10 ohm-cm cells were tested. The temperature dependency of IL is similar for both resistivities at 140mw/sq cm; at high temperature the coefficient varies with fluence as phi 0.18, while at low temperatures the coefficient is relatively independent of fluence. Fluence dependent degration causes a decrease in IL at a rate proportional to phi 0.153 for both resistivities. At all intensities other than 560 mw/sq cm, a linear dependence of IL on illumination was found. The temperature coefficient of voltage was, to a good approximation, independent of both temperature and illumination for both resistivities. Illumination dependence of VOC was logarithmic, while the decrease with fluence of VOC varied as phi 0.25 for both resistivities.

Obenschain, A. F.↗
NASA NTRS1993

X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I

X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.

Shaw, David C.↗
NASA NTRS1988

Effects of electron irradiation on high temperature superconductors and contacts to high temperature superconductors

The discovery of a new class of ceramic superconductors with transition temperatures above liquid nitrogen has opened the doors for exciting space applications. Energy storage, pointing maneuvers, magnetic shielding, and sensitive detection of electromagnetic radiation are some of the longer term possible applications. One near term application involves low electrical resistance, high thermal resistance connections between a detector operating at approximatly or equal to 4 and the electronics operating at approximatly or equal to 77 K. The new high temperature superconductors could accomplish this providing the necessary electrical connections to the ground plane while isolating the system thermally, thus prolonging the life of the mission. With such possibilities it is clearly of value to study the effects of radiation that would be experienced during a typical space mission. In this work we focused specifically on the effects of the electron radiation environment.

Caton, Randall↗
NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗
NASA NTRS2005

Preliminary low temperature electron irradiation of triple junction solar cells

JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

annealing↗
NASA NTRS2002

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Lord, Kenneth↗