Results for “Electronic Conductors” — Page 6

NASA NTRS1985

Galileo internal electrostatic discharge program

The Galileo spacecraft which will orbit Jupiter in 1988 will encounter a very harsh environment of energetic electrons. These electrons will have sufficient energy to penetrate the spacecraft shielding, consequently depositing charges in the dielectric insulating materials or ungrounded conductors. The resulting electric field could exceed the breakdown strength of the insulating materials, producing discharges. The transients produced from these Internal Electrostatic Discharges (IESD) could, depending on their relative location, be coupled to nearby cables and circuits. These transients could change the state of logic circuits or degrade or even damage spacecraft components, consequently disrupting the operation of subsystems and systems of the Galileo spacecraft during its expected mission life. An extensive testing program was initiated for the purpose of understanding the potential threats associated with these IESD events. Data obtained from these tests were used to define design guidelines.

Leung, P. L.↗

NASA NTRS2015

Assessment of Technologies for Noncryogenic Hybrid Electric Propulsion

The Subsonic Fixed Wing Project of NASA's Fundamental Aeronautics Program is researching aircraft propulsion technologies that will lower noise, emissions, and fuel burn. One promising technology is noncryogenic electric propulsion, which could be either hybrid electric propulsion or turboelectric propulsion. Reducing dependence on the turbine engine would certainly reduce emissions. However, the weight of the electricmotor- related components that would have to be added would adversely impact the benefits of the smaller turbine engine. Therefore, research needs to be done to improve component efficiencies and reduce component weights. This study projects technology improvements expected in the next 15 and 30 years, including motor-related technologies, power electronics, and energy-storage-related technologies. Motor efficiency and power density could be increased through the use of better conductors, insulators, magnets, bearings, structural materials, and thermal management. Energy storage could be accomplished through batteries, flywheels, or supercapacitors, all of which expect significant energy density growth over the next few decades. A first-order approximation of the cumulative effect of each technology improvement shows that motor power density could be improved from 3 hp/lb, the state of the art, to 8 hp/lb in 15 years and 16 hp/lb in 30 years.

Electric Propulsion↗

NASA NTRS1980

Risk to the public from carbon fibers released in civil aircraft accidents

Because carbon fibers are strong, stiff, and lightweight, they are attractive for use in composite structures. Because they also have high electrical conductivity, free carbon fibers settling on electrical conductors can cause malfunctions. If released from the composite by burning, the fibers may become a hazard to exposed electrical and electronic equipment. As part of a Federal study of the potential hazard associated with the use of carbon fibers, NASA assessed the public risk associated with crash fire accidents of civil aircraft. The NASA study projected a dramatic increase in the use of carbon composites in civil aircraft and developed technical data to support the risk assessment. Personal injury was found to be extremely unlikely. In 1993, the year chosen as a focus for the study, the expected annual cost of damage caused by released carbon fibers is only $1000. Even the worst-case carbon fiber incident simulated (costing $178,000 once in 34,000 years) was relatively low-cost compared with the usual air transport accident cost. On the basis of these observations, the NASA study concluded that exploitation of composites should continue, that additional protection of avionics is unnecessary, and that development of alternate materials specifically to overcome this problem is not justified.

Source record↗

NASA NTRS1990

Recent observations of high voltage spacecraft-environment interaction at LEO altitudes using sounding rockets

The paper addresses the subject of the interaction of positively and negatively charged bodies with the terrestrial ionosphere at low earth orbit altitudes. Data from two recent sounding rocket flights are used to establish that the current collected by exposed conductors biassed positively at up to 45kV relative to the ionospheric plasma generally follow predictions which account for strong control of electron flow by the geomagnetic field. If the biased structure is in the vicinity of disturbing influences such as an emitted charged particle beam, or locally enhanced gas pressure, then large deviations from the space-charge-limited return currents occur.

Raitt, W. J.↗

NASA NTRS1994

Space Experiments with Particle Accelerators (SEPAC)

The scientific emphasis of this contract has been on the physics of beam ionosphere interactions, in particular, what are the plasma wave levels stimulated by the Space Experiments with Particle Accelerators (SEPAC) electron beam as it is ejected from the Electron Beam Accelerator (EBA) and passes into and through the ionosphere. There were two different phenomena expected. The first was generation of plasma waves by the interaction of the DC component of the beam with the plasma of the ionosphere, by wave particle interactions. The second was the generation of waves at the pulsing frequency of the beam (AC component). This is referred to as using the beam as a virtual antenna, because the beam of electrons is a coherent electrical current confined to move along the earth's magnetic field. As in a physical antenna, a conductor at a radio or TV station, the beam virtual antenna radiates electromagnetic waves at the frequency of the current variations. These two phenomena were investigated during the period of this contract.

Taylor, William W. L.↗

NASA NTRS2001

Fixed-frequency and Frequency-agile (au, HTS) Microstrip Bandstop Filters for L-band Applications

In this work, we report on the performance of a highly selective, compact 1.83 x 2.08 cm(exp 2) (approx. 0.72 x 0.82 in(exp 2) microstrip line bandstop filter of YBa2CU3O(7-delta) (YBCO) on LaAlO3 (LAO) substrate. The filter is designed for a center frequency of 1.623 GHz for a bandwidth at 3 dB from reference baseline of less than 5.15 MHz, and a bandstop rejection of 30 dB or better. The design and optimization of the filter was performed using Zeland's IE3D circuit simulator. The optimized design was used to fabricate gold (Au) and High-Temperature Superconductor (HTS) versions of the filter. We have also studied an electronically tunable version of the same filter. Tunability of the bandstop characteristics is achieved by the integration of a thin film conductor (Au or HTS) and the nonlinear dielectric ferroelectric SrTiO3 in a conductor/ferroelectric/dielectric modified microstrip configuration. The performance of these filters and comparison with the simulated data will be presented.

Saenz, Eileen M.↗

NASA NTRS2018

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Electric aircrafts↗

NASA NTRS2018

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Multifunctional↗

NASA NTRS1973

Wide temperature range electronic device with lead attachment

A electronic device including lead attachment structure which permits operation of the devices over a wide temperature range is reported. The device comprises a core conductor having a thin coating of metal thereon whereby only a limited amount of coating material is available to form an alloy which bonds the core conductor to the device electrode, the electrode composition thus being affected only in the region adjacent to the lead.

Farrell, R.↗

NASA NTRS1989

A comparison of current-voltage relationships of collectors in the earth's ionosphere with and without electron beam emission

Currents measurements obtained by the two sections of the Cooperative High Altitude Rocket Gun Experiment-2 sounding rocket, a mother vehicle carrying a 1-keV electron gun and a daughter vehicle tethered to the mother, are compared with the results of previous models of current collection by a charged conductor in a plasma. The current collection of the daughter vehicle, a conducting body in the ionosphere, is found to agree with the Parker-Murphy (1967) limit. The additional current collection found for the mother vehicle is attributed to beam-plasma interactions.

Myers, Neil B.↗

NASA NTRS2007

Photonic Bandgap (PBG) Shielding Technology

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Bastin, Gary L.↗

NASA NTRS1985

Numerical simulation of positive-potential conductors in the presence of a plasma and a secondary-emitting dielectric

A 2 1/2-dimensional, cylindrically symmetric particle in cell program is used to simulate the interaction of a plasma with a positively biased disk covered by a dielectric material (Kapton). Several runs using different combinations of bias voltages and secondary electron yields are discussed. Special attention is paid to the role of the secondaries as the dielectric surface changes from a negative potential to become increasingly positive. This is termed the 'snapover' process. The contribution due to secondaries is examined by plotting the distribution (number versus position) of the particles emitted by the impacting on the dielectric. These plots show that secondaries are drawn back into the dielectric as well as the conductor in the case of snapover. Mechanisms and experimental implications for these particular distributions are discussed.

Kessel, R. L.↗

NASA NTRS2001

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Chen, Liang-Yu↗

NASA NTRS1991

The performance of cable braids and terminations to lightning induced transients

The latest specification detailing the test waveforms for indirect lightning transients as applied to aircraft wiring systems specify very high voltages and currents. Although considerable data exists for measuring cable screen leakage using such methods as surface transfer impedance and bulk cable injection, there is little data on the likely core transient level that is likely to be induced from these threats. In particular, the new Waveform 5 at very high current levels (10 kA) is reputed to cause severe cable damage. A range of representative cables were made with various screen termination techniques and screening levels. These were tested first to determine their relative screening performance and then they were subjected to lightning transient testing to all the specified waveforms. Core voltages were measured for each test. Tests were also performed on bundles with fewer wires to determine the failure criteria with Waveform 5 and these tests also include flat conductor cables. The test showed that correctly terminated cable bundles performed well in all the tests and would provide a high level of protection to the electronic systems. The use of overbraides, provided the individual screens are well terminated, appears to be unnecessary.

Crofts, David↗

NASA NTRS2001

Modeling Ballistic Current Flow in Carbon Nanotube Wires

Experiments have shown carbon nanotubes (CNT) to be almost perfect conductors at small applied biases. The features of the CNT band structure, large velocity of the crossing subbands and the small number of modes that an electron close to the band center / Fermi energy can scatter into, are the reasons for the near perfect small bias conductance. We show that the CNT band structure does not help at large applied biases - electrons injected into the non crossing subbands can either be Bragg reflected or undergo Zener-type tunneling. This limits the current carrying capacity of CNT. We point out that the current carrying capacity of semiconductor quantum wires in the ballistic limit is different, owing to its band structure. The second aspect addressed is the relationship of nanotube chirality in determining the physics of metal-nanotube coupling. We show that a metallic-zigzag nanotube couples better than an armchair nanotube to a metal contact. This arises because in the case of armchair nanotubes, while the pi band couples well, the pi* band does not couple well to the metal. In the case of zigzag nanotube both crossing modes couple reasonably well to the metal. Many factors such as the role of curvature, strain and defects will play a role in determining the suitability of nanotubes as nanowires. From the limited view point of metal-nanotube coupling, we feel that metallic-zigzag nanotubes are preferable to armchair nanotubes.

Anantram, M. P.↗

NASA NTRS2010

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

Courey, Karim J.↗

NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗

NASA NTRS2004

AIN-Based Packaging for SiC High-Temperature Electronics

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Savrun, Ender↗