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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Hydrogen diffusion and electronic structure in crystalline and amorphous Ti/sub y/CuH/sub x/

Hydrogen diffusion behavior and electronic properties of crystalline TiCuHo94, Ti2CuH1.90, and Ti2CuH2.63 and amorphous a-TiCuH1.4 were studied using proton relaxation times, proton Knight shifts, and magnetic susceptibilities. Crystal structure and hydrogen site occupancy have major roles in hydrogen mobility. The density of electron states at E sub F is reduced in amorphous a-TiCuH1.4 compared to the crystalline hydrides.

Bowman, R. C., Jr.↗
NASA NTRS1997

Doping of Semiconducting Atomic Chains

Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Toshishige, Yamada↗
NASA NTRS1993

FNAS computational modeling

Numerical calculations of the electronic properties of liquid II-VI semiconductors, particularly CdTe and ZnTe were performed. The measured conductivity of these liquid alloys were modeled by assuming that the dominant temperature effect is the increase in the number of dangling bonds with increasing temperature. For low to moderate values of electron correlation, the calculated conductivity as a function of dangling bond concentration closely follows the measured conductivity as a function of temperature. Both the temperature dependence of the chemical potential and the thermal smearing in region of the Fermi surface have a large effect on calculated values of conductivity.

Franz, J. R.↗
NASA NTRS1986

Optical constants of GaAs-AlGaAs superlattices and multiple quantum wells

The optical properties of GaAs-Al sub x Ga sub 1-xAs superlattices are calculated as a function of the frequency and superlattice structure. The comutations are performed using a partition method which combines the vectors k.p method with the pseudopotential technique. The influence of the super-structure on the electronic properties of the systems is accounted for by appropriate quantization conditions. The anisotropy and structure dependence of the dielectric constant result mainly from the contribution of the gamma region while the contributions of the other regions of the Brillouin zone are rather insensitive to the superlattice structure. The superlattice index of refraction values are shown to attain maxima at the various quantized transition energies, where for certain structures, the difference between the refractive indices of the superlattices and its corresponding Al sub x Ga sub 1-xAs alloy can be as large as 2%. In general results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS2001

Coupling of Armchair and Zigzag Tubes to a Free Electron Metal

The effect of nanotube chirality is of prime importance in determining its electronic properties. We address the issue of how chirality affects the coupling of a nanotube to metal contacts. We model coupling of armchair and zigzag nanotubes to metal contacts, in both the side- and end-contacted geometries. In the side-contacted geometry, the coupling of armchair and metallic-zigzag nanotubes to a free electron metal are significantly different. Namely, it is possible to drive a larger current through a metallic-zigzag nanotube. The predicted difference holds good when both (a) the entire circumference and (b) only a finite sector of the nanotube makes contact to the metal electrode. It might be possible to observe the predicted difference between armchair and zigzag nanotubes using gold contacts.

Anantram, M. P.↗
NASA NTRS1986

Electrical properties of Al-In-Sn alloys directionally solidified in high and low gravitational fields

The Al-In-Sn alloys were directionally solidified in the NASA KC-135 aircraft which flies a series of parabolas to generate high (high-g) and low (low-g) gravity forces parallel to the longitudinal growth axis. Thus, for a given sample, successive sections can be identified which were solidified in high-g and low-g. Measurements of the electronic properties of the samples reveal that: the resistivity of the low-g sections is larger (about a factor of 10) than that of the high-g sections; the low-g sections behave conductively like a semi-metal, while the high-g sections are essentially metallic; and both high-g and low-g sections are superconducting but the superconducting transition temperature of the low-g sections is 1 K higher than that of the high-g sections.

Curreri, P. A.↗
NASA NTRS1987

Electrical properties of Al-In-Sn alloys directionally solidified in high and low gravitational fields

The Al-In-Sn alloys were directionally solidified in the NASA KC-135 aircraft which flies a series of parabolas to generate high (high-g) and low (low-g) gravity forces parallel to the longitudinal growth axis. Thus, for a given sample, successive sections can be identified which were solidified in high-g and low-g. Measurements of the electronic properties of the samples reveal that: the resistivity of the low-g sections is larger (about a factor of 10) than that of the high-g sections; the low-g sections behave conductively like a semi-metal, while the high-g sections are essentially metallic; and both high-g and low-g sections are superconducting but the superconducting transition temperature of the low-g sections is 1 K higher than that of the high-g sections.

Wu, M. K.↗
NASA NTRS2017

Optical Properties of Ar Ions Irradiated Nanocrystalline ZrC and ZrN Thin Films

Thin nanocrystalline ZrC and ZrN films (less than 400 nanometers), grown on (100) Si substrates at a substrate temperature of 500 degrees Centigrade by the pulsed laser deposition (PLD) technique, were irradiated by 800 kiloelectronvolts Ar ion irradiation with fluences from 1 times 10(sup 14) atoms per square centimeter up to 2 times 10(sup 15) atoms per square centimeter. Optical reflectance data, acquired from as-deposited and irradiated films, in the range of 500-50000 per centimeter (0.06–6 electronvolts), was used to assess the effect of irradiation on the optical and electronic properties. Both in ZrC and ZrN films we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate, i.e. possible increase in mobility, at higher irradiation flux. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major structural changes.

ZrN↗
NASA NTRS1998

Carbon Nanotube Based Molecular Electronics and Motors: A View from Classical and Quantum Dynamics Simulations

The tubular forms of fullerenes popularly known as carbon nanotubes are experimentally produced as single-, multiwall, and rope configurations. The nanotubes and nanoropes have shown to exhibit unusual mechanical and electronic properties. The single wall nanotubes exhibit both semiconducting and metallic behavior. In short undefected lengths they are the known strongest fibers which are unbreakable even when bent in half. Grown in ropes their tensile strength is approximately 100 times greater than steel at only one sixth the weight. Employing large scale classical and quantum molecular dynamics simulations we will explore the use of carbon nanotubes and carbon nanotube junctions in 2-, 3-, and 4-point molecular electronic device components, dynamic strength characterization for compressive, bending and torsional strains, and chemical functionalization for possible use in a nanoscale molecular motor. The above is an unclassified material produced for non-competitive basic research in the nanotechnology area.

Srivastava, Deepak↗
NASA NTRS1994

The whistler heat flux instability: Threshold conditions in the solar wind

Solar wind electrons are observed often to consist of two components: a core and a halo. The anisotropics and relative average speeds of these components correspond to a heat flux that has the potential to excite several different electromagetic instabilities; wave-particle scattering by the resulting enhanced fluctuations can limit this heat flux. This manuscript describes theoretical studies using the linear Vlasco dispersion equation for drifting bi-Maxwellian component distributions in a homogeneous plasma to examine the threshold of the whistler heat flux instability. Expressions for this threshold are obtained from two different parametric baselines: a local model that yields scalings as functions of local dimensionless plasma paramaters, and a global model based on average electron properties observed during the in-eliptic phase of the Ulysses mission. The latter model yields an expression for the heat flux at threshold of the whistler instability as a function of helisopheric radius that scales in the same way as the average heat flux observed form Ulysses and that provides an approximate upper bound for that same quantity. This theoretical scaling is combined with the observational results to yield a semi-empirical closure relation for the average electron heat flux in the solar wind between 1 and 5 AU.

Gary, S. Peter↗
NASA NTRS1980

Rocket measurements of energetic particles in the midlatitude precipitation zone

Measurements of energetic ion and electron properties as a function of altitude in the midlatitude zone of nighttime energetic particle precipitation are reported. The measurements of particle fluxes, energy spectra and pitch angle distributions were obtained by a Langmuir probe, six energetic particle spectrometers and an electrostatic analyzer on board a Nike Apache rocket launched near the center of the midlatitude zone during disturbed conditions. It is found that the incident flux was primarily absorbed rather than backscattered, and consists of mainly energetic hydrogen together with some helium and a small energetic electron component. Observed differential energy spectra of protons having an exponential energy spectrum, and pitch angle distributions at various altitudes indicate that the energetic particle flux decreases rapidly for pitch angles less than 70 deg. An energetic particle energy flux of 0.002 ergs/sq cm per sec is calculated which indicates the significance of energetic particles as a primary nighttime ionization source for altitudes between 120 and 200 km in the midlatitude precipitation zone.

Voss, H. D.↗
NASA NTRS1998

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗
NASA NTRS1984

Producing gallium arsenide crystals in space

The production of high quality crystals in space is a promising near-term application of microgravity processing. Gallium arsenide is the selected material for initial commercial production because of its inherent superior electronic properties, wide range of market applications, and broad base of on-going device development effort. Plausible product prices can absorb the high cost of space transportation for the initial flights provided by the Space Transportation System. The next step for bulk crystal growth, beyond the STS, is planned to come later with the use of free flyers or a space station, where real benefits are foreseen. The use of these vehicles, together with refinement and increasing automation of space-based crystal growth factories, will bring down costs and will support growing demands for high quality GaAs and other specialty electronic and electro-optical crystals grown in space.

Randolph, R. L.↗
NASA NTRS1968

Beryllium as an acceptor in silicon.

Electronic properties of beryllium doped silicon studied with IR absorption spectroscopy and electrical measurements, describing Be thermal diffusion

Franks, R. K.↗
NASA NTRS1971

Reactor core length, externally configured thermionic converter.

Results of testing a converter having an external emitter configuration for 190 hours using RF induction heating. The converter was assembled with a rhenium emitter, 25.4 cm long, having a 91.2 sq cm emitting area, and a niobium collector with a molybdenum coating to improve its electronic property. The collector was water-cooled. The test included: static power output measurements, dynamic characteristics, and the effects of the temperature distribution along the emitter. The maximum power output achieved from the converter at an emitter temperature of 1942 K was 178 W at 0.48 V output, with a power density of 1.95 W/sq cm and an efficiency of 5.5%. The static characteristics also indicated that, with a constant power input, the converter power output does not vary with the output voltage as a result of self-adjustment of the emitter temperature. An investigation of the effects of the temperature distribution along the emitter length showed a 33% improvement in the converter output power with a flattening of the emitter temperature.

Shimada, K.↗
NASA NTRS1973

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.

Fahrenbruch, A. L.↗