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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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108 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Functional Expansion Tallies Using MCNP6 PTRAC Files [Slides]

Accuracy is vital for many radiation transport applications. Monte Carlo (MC) codes are the most accurate, but they are expensive for fine meshes. Functional Expansion Tallies (FETs) yield smoother, lower-variance results with far fewer degrees of freedom.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

COVID-19 Biomarkers and Advanced Sensing Technologies for Point-of-Care (POC) Diagnosis

COVID-19, also known as SARS-CoV-2 is a novel, respiratory virus currently plaguing humanity. Genetically, at its core, it is a single-strand positive-sense RNA virus. It is a beta-type Coronavirus and is distinct in its structure and binding mechanism compared to other types of coronaviruses. Testing for the virus remains a challenge due to the small market available for at-home detection. Currently, there are three main types of tests for biomarker detection: viral, antigen and antibody. Reverse Transcription-Polymerase Chain Reaction (RT-PCR) remains the gold standard for viral testing. However, the lack of quantitative detection and turnaround time for results are drawbacks. This manuscript focuses on recent advances in COVID-19 detection that have lower limits of detection and faster response times than RT-PCR testing. The advancements in sensing platforms have amplified the detection levels and provided real-time results for SARS-CoV-2 spike protein detection with limits as low as 1 fg/mL in the Graphene Field Effect Transistor (FET) sensor. Additionally, using multiple biomarkers, detection levels can achieve a specificity and sensitivity level comparable to that of PCR testing. Proper biomarker selection coupled with nano sensing detection platforms are key in the widespread use of Point of Care (POC) diagnosis in COVID-19 detection.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

Herath Mudiyanselage, Dinusha (ORCID:0000000186119↗
DOE OSTI2020

Bulk direct gap MoS2 by plasma induced layer decoupling

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗
DOE OSTI2022

Ultra‐Narrow Phosphorene Nanoribbons Produced by Facile Electrochemical Process

Abstract Phosphorene nanoribbons (PNRs) have inspired strong research interests to explore their exciting properties that are associated with the unique two‐dimensional (2D) structure of phosphorene as well as the additional quantum confinement of the nanoribbon morphology, providing new materials strategy for electronic and optoelectronic applications. Despite several important properties of PNRs, the production of these structures with narrow widths is still a great challenge. Here, a facile and straightforward approach to synthesize PNRs via an electrochemical process that utilize the anisotropic Na + diffusion barrier in black phosphorus (BP) along the [001] zigzag direction against the [100] armchair direction, is reported. The produced PNRs display widths of good uniformity (10.3 ± 3.8 nm) observed by high‐resolution transmission electron microscopy, and the suppressed B 2g vibrational mode from Raman spectroscopy results. More interestingly, when used in field‐effect transistors, synthesized bundles exhibit the n‐type behavior, which is dramatically different from bulk BP flakes which are p‐type. This work provides insights into a new synthesis approach of PNRs with confined widths, paving the way toward the development of phosphorene and other highly anisotropic nanoribbon materials for high‐quality electronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Chemiresistor sensor based on ion-imprinted polymer (IIP)-functionalized rGO for Cd(II) ions in water

This study reports the design and development of a novel chemiresistor (CR) sensor using ion imprinted polymer (IIP)-functionalized reduced graphene oxide (rGO) [IIP/rGO-CR] for cadmium ions (Cd(II)) determination in water. The sensor consisted of a CR transducer made of rGO channel bridging source and drain electrodes prepared by self-assembly and thermal reduction of graphene oxide (GO) on Au interdigitated electrodes chip fabricated on Si/SiO 2 substrate. The IIP was then grafted on rGO using surface-initiated reversible addition-fragmentation chain transfer (RAFT) polymerization with polyethylenimine (PEI) and methylacrylic acid (MAA) as dual functional monomers and Cd(II) ions as template through UV light-initiated copolymerization. The IIP functionalized on rGO acted as an effective recognition element that modulated the resistance of rGO-CR upon binding of Cd(II), enabling Cd(II) detection at ppb level in aqueous solutions. The prepared IIP/rGO-CR sensor worked effectively in the linear range of 2~200ppb and achieved a limit of detection (LOD) of 0.83 ppb, which is lower than the World Health Organization guidelines of 3ppb for drinking water quality. The developed sensor of IIP/rGO-CR showed a high selectivity against a variety of trace and heavy metal ions found in water and good stability for up to 60 days when stored at room temperature for Cd(II) determination in water. Further, the sensor was successfully applied to analyzing Cd(II) spiked in tap, lake and river waters with a 94.5%–113.5% recovery, demonstrating a high degree of accuracy even in complex water samples. Finally, our results illustrated that the CR sensor of IIP functionalized rGO provides a potential platform for sensitive, robust and low-cost environmental analysis of Cd(II) in water.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A portable and reusable sensor system based on graphene for real-time and sensitive detection of lead ions in water

Long-term exposure to Pb 2+ can cause irreversible damage to the nervous, cardiovascular, and reproductive systems. Therefore, developing a fast and sensitive detection system capable of monitoring minuscule concentrations of Pb 2+ is essential. In this study, we demonstrated a fully portable sensor system enabling rapid, sensitive, and real-time monitoring of Pb 2+ . The sensor system adopted the remote-gate field-effect transistor (RGFET) detection scheme and was easy to operate, even for non-experts. The sensor system comprised two printed circuit boards (PCBs): a sensor PCB with a remote-gate electrode and an analyzer PCB with a metal-oxide-semiconductor field-effect transistor (MOSFET) transducer and peripheral electronics to manage sensor signals. To achieve a high sensitivity for Pb 2+ , we utilized graphene ink drop-casted on the sensor PCB as a sensing membrane. The graphene film was easy to deposit and remove, enabling the sensor PCB to be reused multiple times. The sensor system was further linked to a smartphone application that instantly monitors the sensor response, allowing for rapid point-of-use detection. The sensor exhibited a high sensitivity of 21.7% when the limit of detection (LOD) value of 1 nM (∼0.2 ppb) was detected, and the typical detection time for each sample was approximately 60 seconds. This portable sensor system advances sensing technologies and could potentially supplement expensive, laborious conventional sensing equipment.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.

Commutation cell, four quadrant switch, SiC Bidire↗
DOE OSTI2023

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗
DOE OSTI2023

Dissecting components of the Campylobacter jejuni fetMP-fetABCDEF gene cluster under iron limitation

Campylobacter jejuni is a leading cause of bacterial gastroenteritis worldwide. Acute infection can be an antecedent to highly debilitating long-term sequelae. The expression of iron acquisition systems is vital for C. jejuni to survive the low iron availability within the human gut. The C. jejuni fetMP-fetABCDEF gene cluster is known to be upregulated during human infection and under iron limitation. While FetM and FetP have been functionally linked to iron transport in prior work, here we assess the contribution of each of the downstream genes (fetABCDEF) to C. jejuni growth during both iron-depleted and iron-replete conditions. Significant growth impairment was observed upon disruption of fetA, fetB, fetC, and fetD, suggesting a role in FetMP-mediated iron acquisition for each encoded protein. FetA expression was not dependent on the presence of FetB, FetC, FetD, FetE, or FetF. The functions of the putative thioredoxins FetE and FetF were redundant under iron-limited growth, requiring a double deletion (ΔfetEF) to exhibit a growth defect. C. jejuni FetE was expressed, and the structure was solved to 1.50 Å, revealing structural similarity to thiol-disulfide oxidases. Functional characterization in biochemical assays showed that FetE reduced insulin at a slower rate than Escherichia coli Trx and that together, FetEF promoted substrate oxidation in cell extracts, suggesting that FetE (and presumably FetF) are oxidoreductases that can mediate oxidation in vivo. This study advances our understanding of the contributions of the fetMP-fetABCDEF gene cluster to virulence at a genetic and functional level, providing foundational knowledge toward mitigating C. jejuni-related morbidity and mortality.

59 BASIC BIOLOGICAL SCIENCES↗