Electrical characteristics of gallium arsenide 'real' surfaces
GaAs single crystals real surface electrical characteristics, using pulsed field effect techniques
Gatos, H. C.↗
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Development of ion implanted gallium arsenide transistors
Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.
Hunsperger, R.↗
A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide
In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.
Lin, A. H.↗
Experimental observation of Wannier levels in semi-insulating gallium arsenide.
Optical absorption in an electric field has been of increased interest in recent years since Callaway predicted that the Wannier levels may be observable in direct-transition semiconductors such as GaAs. In this work, such levels have been observed for the first time and found to be in substantial agreement with the Callaway theory.
Koss, R. W.↗
Refractive index of n-type gallium arsenide.
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Zoroofchi, J.↗
Feasibility investigation of growing gallium arsenide single crystals in ribbon form
Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3 encapsulated feed stock, confined by a quartz cover plate. By controlling the heat flow in the graphite boat and controlling the zoning rate, large grained, single phase polycrystalline samples with directional solidification and good thickness control were achieved. Arsenic vaporization was effectively suppressed at the melting point of GaAs by the B2O3 moat and 3 atmospheres of pressure. A vertical constrained-zone-melting apparatus with a B2O3 moat seal, rf heating, and water cooling on the bottom will be used to control the heat flow and temperature patterns required for growth of single crystal ribbons.
Richardson, D. L.↗
Third Working Meeting on Gallium Arsenide Solar Cells
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.
Walker, G. H.↗
Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained
The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.
Gourrier, S.↗
Gallium arsenide (GaAs) solar cell modeling studies
Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.
Heinbockel, J. H.↗
Reliability study of refractory gate gallium arsenide MESFETS
Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.
Yin, J. C. W.↗
Gallium arsenide (GaAs) power conversion concept
A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.
Nussberger, A. A.↗
An enhanced sensitivity null ellipsometry technique for studying films on substrates - Application to silicon nitride on gallium arsenide
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Alterovitz, S. A.↗
Research on gallium arsenide diffused junction solar cells
The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.
Borrego, J. M.↗
Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules
The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).
Mesch, H. G.↗
Some observations of heated gallium arsenide heteroface solar cells
GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Experiments were conducted to examine the effects on the room temperature photovoltaic properties of cells due to heating in a vacuum at temperatures encountered in radiation damage annealing. Some degradation of photovoltaic properties was observed for all the cells that were heated. The lifetime, due to heating, for a 20-percent degradation in output power was estimated for cells heated at 200 C and 400 C. The results for cells that were heated at 200 C for 1750 hours indicate a lifetime of at least 3 years. The results for cells that were heated at 400 C for 264 hours indicate that lifetimes in the range of 350 hours to 1400 hours may be expected. The results indicate that for cells that must be heated at 400 C the selection of fabrication techniques and materials is particularly important.
Friesen, W. J.↗
Electrical characterization of plasma-grown oxides on gallium arsenide
Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.
Hshieh, F. I.↗
Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap
n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.
Mathur, G.↗
A 25.5 percent AMO gallium arsenide grating solar cell
Recent calculations have shown that significant open circuit voltage gains are possible with a dot grating junction geometry. The feasibility of applying the dot geometry to the GaAs cell was investigated. This geometry is shown to result in voltages approach 1.120 V and efficiencies well over 25 percent (AMO) if good collection efficiency can be maintained. The latter is shown to be possible if one chooses the proper base resistivity and cell thickness. The above advances in efficiency are shown to be possible in the P-base cell with only minor improvements in existing technology.
Weizer, V. G.↗