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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Assessment of Zr-Fe-V getter alloy for gas-gap heat switches

A commercial Zr-V-Fe alloy (i.e., SAES Getters trade name alloy St-172) has been assessed as reversible hydrogen storage material for use in actuators of gas gap heat switches. Two prototype actuators containing the SAES St-172 material were built and operated for several thousand cycles to evaluate performance of the metal hydride system under conditions simulating heat switch operation.

metal hydrides gas gap heat switches hydrogen stor↗
DOE OSTI2015

Combined Impact of Heterogeneous Lifetime and Gettering on Solar Cell Performance

We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys’ Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.mit.edu/impurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.

14 SOLAR ENERGY↗
DOE OSTI2016

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poor wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Novel Methods of Tritium Sequestration: High Temperature Gettering and Separation Membrane Materials Discovery for Nuclear Energy Systems

This project is aimed at addressing critical issues related to tritium sequestration in next generation nuclear energy systems. A technical hurdle to the use of high temperature heat from the exhaust produced in the next generation nuclear processes in commercial applications such as nuclear hydrogen production is the trace level of tritium present in the exhaust gas streams. This presents a significant challenge since the removal of tritium from the high temperature gas stream must be accomplished at elevated temperatures in order to subsequently make use of this heat in downstream processing. One aspect of the current project is to extend the techniques and knowledge base for metal hydride materials being developed for the ''hydrogen economy'' based on low temperature absorption/desorption of hydrogen to develop materials with adequate thermal stability and an affinity for hydrogen at elevated temperatures. The second focus area of this project is to evaluate high temperature proton conducting materials as hydrogen isotope separation membranes. Both computational and experimental approaches will be applied to enhance the knowledge base of hydrogen interactions with metal and metal oxide materials. The common theme between both branches of research is the emphasis on both composition and microstructure influence on the performance of sequestration materials.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS2000

Getters for Reliable Hermetic Packages

A variety of sealed-off devices such as cathode ray tubes (CRT's) electron tubes, plasma displays, particle accelarators and colliders vacuum thermal insulation, ultra-high vacuum (UHV), extreme high vacuum (XHV) systems for semiconductor processing, X-ray tubes, lamps, field-emission displays (FEDs) flat panel displays (FPDs), some microelectromechanical systems (MEMS) and science instruments for space applications, nuclear systems require a vacuum for their successful operation.

getters hermetic packaging electronic↗
DOE OSTI2011

Retrograde Melting and Internal Liquid Gettering in Silicon

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Phase Change-Driven Negative Activation Energies in Pd/Carbon-Based/Organic Getter Hydrogenation Reactions

In this study, the hydrogenation of 1,4-diphenylbutadiyne (DPB) blended with carbon-supported Pd (DPB–Pd/C) in the form of pellets was investigated by isothermal–isobaric experiments at 1333 Pa of H 2 and in the temperature range of 291–315 K. The extracted kinetics were then used in conjunction with a complementary constant rate of H 2 input experimentation to model the performance of a DPB-catalysis/support system as a function of temperature and H 2 partial pressure. First-principles density functional theory (DFT) calculations were also performed to shed light on the molecular level energetics of DPB and its intermediate states. A seemingly puzzling formation of alternate positive activation energy barrier (higher reaction rate with higher temperature) and negative activation energy barrier (higher reaction rate with lower temperature) zones during the hydrogenation process was discovered. However, this observed phenomenon can be logically explained in terms of the associated phase changes and H 2 transport in the material. This work provides a good illustration of a rarely encountered chemical process with a negative activation energy barrier.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Nonevaporable getter coating chambers for extreme high vacuum

Techniques for NEG coating a large diameter chamber are presented along with vacuum measurements in the chamber using several pumping configurations, with base pressure as low as 1.56x10^-12 Torr (N2 equivalent) with only a NEG coating and small ion pump. We then describe modifications to the NEG coating process to coat complex geometry chambers for ultra-cold atom trap experiments. Surface analysis of NEG coated samples are used to measure composition and morphology of the thin films. Finally, pressure measurements are compared for two NEG coated polarized electron source chambers: the 130 kV polarized electron source at Jefferson Lab and the upgraded 350 kV polarized 2 electron source, both of which are approaching or within the extreme high vacuum (XHV) range, defined as P<7.5x10^-13 Torr.

47 OTHER INSTRUMENTATION↗