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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

RF operation of AlN/Al 0.25 Ga 0.75 N/AlN HEMTs with f T /f max of 67/166 GHz

Abstract We report on highly-scaled Al 0.25 Ga 0.75 N channel high electron mobility transistors. Regrown ohmic contacts covering the sidewall of the compressively strained Al 0.25 Ga 0.75 N channel exhibited a low contact resistance ofR c = 0.23 Ω · mm. Scaled devices with a T-shaped gate showed record high speed for any AlGaN-based transistors,f T /f max = 67/166 GHz, while simultaneously achieving high average breakdown field exceeding 2 MV cm −1 . The load-pull measurements performed at 10 GHz revealed a 20% peak power added efficiency with an output power density of 2 W mm −1 , which is mainly limited by the RF dispersion.

Physics↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlGa diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1992

V-band pseudomorphic HEMT MMIC phased array components for space communications

Recent advances in pseudomorphic high-electron-mobility transistor (PMHEMT) monolithic microwave integrated circuit (MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. The development of V-band PMHEMT/MMIC components including power amplifiers and phase shifters is described. For the single-stage MMIC power amplifier employing a 200 micron PMHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 1.8 dB associated gain and 26.4 percent power-added efficiency at 60 GHz. A two-stage MMIC amplifier utilizing the same devices demonstrated small-signal gain as high as 15 dB at 58 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz was measured.

Lan, G. L.↗
NASA NTRS1991

A high efficiency Ka-band monolithic pseudomorphic HEMT amplifier

A monolithic three-stage Ka-band amplifier has been designed and fabricated on a doped channel heterostructure. Devices with gate length of 0.2 micron and gate width of 50, 100, and 250 micron were cascaded. The gate and drain bias networks were also integrated. The small signal gain is 31 dB and the amplifier is capable of an output power of 190 mW with 23 dB gain and 30.2 percent power added efficiency at 31 GHz. This is a record efficiency for a multistage MMIC at this frequency.

Saunier, Paul↗
NASA NTRS2002

Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers

The goal of this project is to develop and demonstrate a new generation of superconducting tunnel junction (SIS) receivers with extremely wide instantaneous (intermediate-frequency, or IF) bandwidths, of order 12 GHz. Such mixers would allow rapid submillimeter wavelength spectral line surveys to be carried out with SOFIA, and could potentially be used for future submillimeter space missions such as SAFIR. There are two major components which are being developed: (1) SIS mixers with broad (12 GHz) IF bandwidths; and (2) low-noise, broadband microwave, (6-18 GHz) amplifiers, which amplify the IF output from the SIS mixer. The work on these components is discussed in two sections

Zmuidzinas, Jonas↗
NASA NTRS2002

W-band InP based HEMT MMIC low noise amplifiers

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

monolithic microwave integrated circuits low noise↗