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Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
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Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics
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Phase-Inversion Polymer Composite Separators Based on Hexagonal Boron Nitride Nanosheets for High-Temperature Lithium-Ion Batteries
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Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films
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Quantum Sensing of Paramagnetic Spins in Liquids with Spin Qubits in Hexagonal Boron Nitride
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Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)
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Intrinsic toughening and stable crack propagation in hexagonal boron nitride
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Syngas molecules as probes for defects in 2D hexagonal boron nitride: their adsorption and vibrations
Through insights from first-principles calculations, we predict defect-laden h -BN, particularly with N vacancy, to have good propensity toward CO and CO 2 hydrogenation. Vibrational frequencies of CO and CO 2 are proposed as identifiers of defect type.
Magnetism and interlayer bonding in pores of Bernal-stacked hexagonal boron nitride
When single-layer h-BN is subjected to a high-energy electron beam, triangular pores with nitrogen edges are formed. Because of the broken sp 2 bonds, these pores are known to possess magnetic states. Here, we report on the magnetism and electronic structure of triangular pores as a function of their size. Moreover, in the Bernal-stacked h-BN (AB-h-BN), multilayer pores with parallel edges can be created, which is not possible in the commonly fabricated multilayer AA'-h-BN. Given that these pores can be manufactured in a well-controlled fashion using an electron beam, it is important to understand the interactions of pores in neighboring layers. We find that in certain configurations, the edges of the neighboring pores remain open and retain their magnetism, and in others, they form interlayer bonds. We present a comprehensive report on these configurations for small nanopores. We find that at low temperatures, these pores have near degenerate magnetic configurations, and may be utilized in magnetoresistance and spintronics applications. In the process of forming larger multilayer nanopores, interlayer bonds can form, reducing the magnetization. Yet, unbonded parallel multilayer edges remain available at all sizes. Understanding these pores is also helpful in a multitude of applications such as DNA sequencing and quantum emission.
Chemical vapor deposition of hexagonal boron nitride on germanium from borazine
hBN is deposited onto semiconducting substrates with control over the domain alignment (including close-to-unidirectional alignment) and monolayer quality.