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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

AIRS-Light Instrument Concept and Critical Technology Development

Understanding Earth's climate, atmospheric transport mechanisms, and the hydrologic cycle requires a precise knowledge of global atmospheric circulation, temperature profiles, and water vapor distribution. The accuracy of advanced sounders such as AIRS/AMSU/HSB on NASA's Aqua spacecraft can match radiosonde accuracy. It is essential to fold those capabilities fully into the NPOESS, enabling soundings of radiosonde accuracy, every 6 hours around the globe on an operational basis. However, the size, mass, power demands, and thermal characteristics of the Aqua sounding instrument suite cannot be accommodated on the NPOESS spacecraft. AIRS-Light is an instrument concept, developed under the Instrument Incubator Program, which provides IR sounding performance identical to the AIRS instrument, but uses advances in HgCdTe FPA technology and pulse tube cooler technology, as well as design changes to dramatically reduce the size, mass, and power demand, allowing AIRS-Light to meet all NPOESS spacecraft interface requirements. The instrument concept includes substantial re-use of AIRS component designs, including the complex AIRS FPA, to reduce development risk and cost. The AIRS-Light Instrument Incubator program fostered the development of photovoltaic-mode HgCdTe detector array technology for the 13.5-15.4 micron band covered by photoconductive-mode HgCdTe arrays in AIRS, achieved state of the art results in this band, and substantially reduced the development risk for this last new technology needed for AIRS-Light implementation, A demonstration of a prototype 14.5-15.4 micron band IRFPA in a reduced heat-load dewar together with the IMAS pulse tube cryocooler is in progress.

Maschhoff, Kevin↗
NASA NTRS2004

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

Marshall, Paul↗
NASA NTRS2014

New and Better Near-Infrared Detectors for JWST Near Infrared Spectrograph

ESA and NASA recently selected two 5 m cutoff Teledyne H2RG sensor chip assemblies (SCA) for flight on the James Webb Space Telescope (JWST) Near Infrared Spectrograph (NIRSpec). These HgCdTe SCAs incorporate Teledynes improved barrier layer design that eliminates the degradation that affected earlier JWST H2RGs(Rauscher et al. 2012a). The better indium barrier, together with other design changes, has improved the performance and reliability of JWSTs SCAs. In this article, we describe the measured performance characteristics that most directly affect scientific observations including read noise, total noise, dark current, quantum efficiency (QE), and image persistence. As part of measuring QE, we measured the quantum yield as a function of photon energy,, and found that it exceeds unity for photon energies E (2.65.2) Eg, where Eg is the HgCdTe bandgap energy. This corresponds to. 2 m for NIRSpecs 5 m cutoff HgCdTe. Our measurements agree well with a previous measurement by McCullough et al. (2008) for. 1.3. For 1.3, we find a slower increase in with photon energy than McCullough et al. did. However, and as McCullough et al. note, their two state model of the yield process is not valid for large 1.

New and Better↗
NASA NTRS1982

IR area array status

Leading array technologies are defined and the status of HgCdTe hybrid focal plane development is reported. The liquid phase epitaxy system for HgCdTe production is also discussed.

Rode, J.↗
NASA NTRS1984

Solidification and crystal growth of solid solution semiconducting alloys

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

Lehoczky, S. L.↗
NASA NTRS1985

Theoretical interpretation of thermal arrest data from differential thermal analysis measurements

A theory was developed to interpret the thermal arrest data of HgCdTe system from differential thermal analysis measurements. A nonlinear regression program is used to model fit the data. The purpose is to obtain a set of parameters which will give the information about average radiation coefficient, latent heat of fussion, and specific heat of the HgCdTe system at various compositions. The liquidus and solidus at various compositions are also obtained. The heat radiation from the furnace, heat radiation from the system, heat capacity from both the system and the quartz tube and the heat of fusion of the system are considered, however, it neglects heat transfer through conduction and convection.

Wang, J. C.↗
NASA NTRS1987

30-micron heterodyne receiver

Advantages and constraints of remote measurements using heterodyne spectroscopy near 30 microns are discussed. The state of the art of wideband HgCdTe photomixers and PbSnSe diode-laser local oscillators being developed for FIR heterodyne receivers is described. The first compact 30-micron heterodyne radiometer was built, and initial results at 28-microns show about 2-percent mixer efficiency for a 500-MHz-bandwidth receiver. Factors limiting receiver performance are discussed, along with the projected sensitivity of new interdigitated-electrode HgCdTe photoconductor mixers being developed for operation up to 200 microns.

Kostiuk, Theodor↗
NASA NTRS1989

Composite Semiconductor Substrates

Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.

Nouhi, Akbar↗
NASA NTRS1989

Research and development of HgZnTe as an infrared material

Interfacial morphology and Fermi level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe have been studied using X-ray and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation, where the weak HgTe bond and consequent ease of Hg loss strongly influence semiconductor disruption and metal-semiconductor intermising. For Al/CdTe, the strong Al-Te reaction yields a significantly more extensive Al-Te reacted region than has been observed for HgCdTe. The Al/ZnTe interface is observed to be more abrupt than Al/CdTe. The final Fermi level pinning positions, Ef-Evbm for Al, Ag, and Pt on p-type CdTe and p-ZnTe have been determined. Efi is found to be roughly the same for both CdTe and ZnTe, with the value for ZnTe lying approximately 0.2 eV closer to the VBM for all three metals. From these results, one would expect Schottky barriers of about the same height for these metals on p-CdTe and p-ZnTe; and also that, in principle, metal interfaces with the two alloys HgCdTe and HgZnTe would have the same properties. Comparisons and implications for electrical behavior of metal contacts to the alloys are discussed.

Wahi, A. K.↗
NASA NTRS1988

The Santa Barbara Research Center multimodule shortwave IR linear array and scene simulator

Alignment test results and scene simulator imagery are presented for a 1 x 1280 element linear assembly consisting of 5 end-butted modules. The modules include a Si readout chip, a 256 element photovoltaic HgCdTe detector array, and a Si/sapphire carrier. At 145 K, the operation of the LPE shortwave HgCdTE detector array yielded Resistance Area products of 420,000 ohm-sq cm. The results demonstrate the ability to fabricate high-performance, long linear multimodule shortwave IR focal planes for space applications.

Cizdziel, Philip↗
NASA NTRS1999

Double Diffusive Convection in Materials Processing

A great number of crystals grown in space are plagued by convective motions which contribute to structural flaws. The character of these instabilities is not well understood but is associated with density variations in the presence of residual gravity (g-jitter). As a specific example, past HgCdTe crystal growth space experiments by Lehoczky and co-workers indicate radial compositional asymmetry in the grown crystals. In the case of HgCdTe the rejected component into the melt upon solidification is HgTe which is denser than the melt. The space grown crystals indicate the presence of three dimensional flow with the heavier HgTe-rich material clearly aligned with the residual gravity (0.55-1.55 micro g) vector. This flow stems from double-diffusive convection, namely, thermal and solutal buoyancy driven flow in the melt. The study of double-diffusive convection is multi-faceted and rather vast. In our investigation, we seek to focus on one specific aspect of this discipline that is of direct relevance to materials processing especially crystal growth, namely, the side ways heating regime. This problem has been widely studied, both experimentally and numerically, in the context of solar ponds wherein the system is characterized by a linear salt (solutal) gradient with an imposed lateral temperature gradient. The induced flow instabilities arise from the wide disparity between the fluid thermal diffusivity and the solute diffusivity. The extension of the analysis to practical crystal growth applications has however not been rigorously made and understood. One subtle but important difference in crystal growth systems is the fact that die system solute gradient is non-linear (typically exponential). Besides, the crystal growth problem has the added complexities of solidification, both lateral and longitudinal thermal gradients and segregation phenomena in systems where binary and ternary compounds are being grown. This paper treats the side ways heating problem alone in a model fluid system. Results from detailed numerical calculations, mainly two dimensional are provided. The interactions between a non-linear solute gradient and an imposed transverse thermal gradient are investigated. The buoyancy effects are treated in the traditional Boussinesq approximation and also in a more complete density formulation to address recent concerns of the first approach especially in simulations of the system response in a reduced gravity environment. Detailed flow, temperature and solute field plots along with heat and mass transfer results are presented in the paper. Implications to practical crystal growth systems as discerned from the modeling results are also explored and reported.

Ramachandra, Narayanan↗
NASA NTRS1998

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗
NASA NTRS2000

Modeling of a Non-Dilute Alloy Solidification Under Terrestrial and Microgravity Conditions

A general finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe from the melt. 2-D and 3-D models with and without Oberbeck-Boussinesq (O-B) approximation were used. Verification of the 3-D model was based on experimental data. The location and the shape of the interface were determined using melting temperatures obtained from the HgCdTe liquidus curve. Double-diffusive convection in the melt is caused by radial temperature gradients and by rejection at the solid-melt interface of the heavier HgTe-rich solute. Because of these complicating factors, dimensional rather than non-dimensional modeling was performed. Models based on complete set of Navier-Stokes equations for compressible media are superior to the O-B approximation in microgravity, because they provide more accurate estimation of convection.

Bune, Andris V.↗
NASA NTRS2007

Temperature Evolution in Excitonic Absorptions of Cd(0.96)Zn(0.04) Materials

We report cryogenic optical properties of Cd(0.96)Zn(0.04)Te wafers that are used as substrate seed layers in HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the sample frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. These measurements show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗
NASA NTRS2008

The (55)Fe X-ray Energy Response of Mercury Cadmium Telluride Near-Infrared Detector Arrays

The accurate determination of a detector's fundamental parameters, including read noise, dark current, and QE, relies on a proper measurement of a detector's conversion gain (e- ADU(exp -1)). Charge coupling effects, such as interpixel capacitance, attenuate photon shot noise and result in an overestimation of conversion gain when implementing the photon transfer technique. An approach involving (55)Fe X-rays provides a potentially straightforward measurement of conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by the X-ray. This technique is already preferred within the CCD community, as the pair production energy for silicon is well established. In contrast, to date the pair production energy is unknown for HgCdTe, a material commonly used for near-infrared detectors. In this paper, we derive a preliminary calibration of the (55)Fe X-ray energy response of HgCdTe using 8 HST WFC3 1.7 micrometers flight grade detectors. Our conversion of the X-ray intensities from counts into electrons implements a technique that restores the 'true' gain via classical propagation of errors. For these detectors, our analysis yields preliminary results of good statistical precision: each Ka event generates 1849 +/- 46 electrons, which corresponds to a pair production energy of 3.21+/-f 0.08 eV. We are continuing to assess potential systematic effects to further refine the accuracy of this result.

Fox, Ori↗
NASA NTRS2007

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

Gunapala, Sarath↗
NASA NTRS2005

GaAs QWIP Array Containing More Than a Million Pixels

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Jhabvala, Murzy↗
NASA NTRS2004

Coastal Research Imaging Spectrometer

The Coastal Research Imaging Spectrometer (CRIS) is an airborne remote sensing system designed specifically for research on the physical, chemical, and biological characteristics of coastal waters. The CRIS includes a visible-light hyperspectral imaging subsystem for measuring the color of water, which contains information on the biota, sediment, and nutrient contents of the water. The CRIS also includes an infrared imaging subsystem, which provides information on the temperature of the water. The combination of measurements enables investigation of biological effects of both natural and artificial flows of water from land into the ocean, including diffuse and point-source flows that may contain biological and/or chemical pollutants. Temperature is an important element of such measurements because temperature contrasts can often be used to distinguish among flows from different sources: for example, a sewage outflow could manifest itself in spectral images as a local high-temperature anomaly. Both the visible and infrared subsystems scan in pushbroom mode: that is, an aircraft carrying the system moves along a ground track, the system is aimed downward, and image data are acquired in across-track linear arrays of pixels. Both subsystems operate at a frame rate of 30 Hz. The infrared and visible-light optics are adjusted so that both subsystems are aimed at the same moving swath, which has across-track angular width of 15 . Data from the infrared and visible imaging subsystems are stored in the same file along with aircraft- position data acquired by a Global Positioning System receiver. The combination of the three sets of data is used to construct infrared and hyperspectral maps of scanned areas (see figure). The visible subsystem is based on a grating spectrograph and a rapid-readout charge-coupled-device camera. Images of the swatch are acquired in 256 spectral bands at wavelengths from 400 to 800 nm. The infrared subsystem, which is sensitive in a single wavelength band of 8 to 10 m, is based on a focal-plane array of HgCdTe photodetectors that are cooled to an operating temperature of 77 K by use of a closed-Stirling-cycle mechanical cooler. The nonuniformities of the HgCdTe photodetector array are small enough that the raw pixel data from the infrared subsystem can be used to recognize temperature differences on the order of 1 C. By use of a built-in blackbody calibration source that can be switched into the field of view, one can obtain bias and gain offset terms for individual pixels, making it possible to offset the effects of nonuniformities sufficiently to enable the measurement of temperature differences as small as 0.1 C.

Lucey, Paul G.↗