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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Implementation of an impurity diagnostic suite on the Pegasus-III experiment

A suite of diagnostics used to assess impurity content and dynamics has been updated, upgraded, and installed on the Pegasus-III Experiment. Typical plasma parameters during local helicity injection start-up are τ shot ~10 ms, n e ~ 1 × 10 19 m –3 , and T e ~ 50 eV. The deployed diagnostics are compatible with this modest temperature and density regime and provide species identification, source localization, and estimation of radiation losses. Impurity species are determined by recording time-evolving, single line-of-sight spectra at 1.25 kfps using a SPRED (Survey, Poor Resolution, Extended Domain) vacuum ultraviolet spectrometer. SPRED is equipped with 450 g/mm grating, giving a spectral resolution of 0.33 nm and a spectral range from ~10 to 110 nm, useful to identify light impurity species in this temperature and density range. An absolutely calibrated spectrometer that collects light from the plasma at R tan = 15.9 cm and Δt ≥ 2 ms is used as a visible survey spectrometer and for continuum measurements. The radiated power from the plasma is estimated with a photodiode-based diagnostic. Two 16-channel absolute extreme ultraviolet diode arrays are placed behind pinhole apertures, resulting in 32 lines of sight at Z = 0, with a spatial resolution of 2–3 cm and a time response of 60 kHz. A photometrically calibrated collinear D α /near infrared filtered photodiode-based system measures the D α emission and around 1040 nm. All these instruments have been designed to suppress electromagnetic interference from megawatt-class switching power supplies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

Photoconductive semiconductor switches (PCSSs) are fabricated on type IIa diamond substrates with varying boron and nitrogen impurity levels (<10 14 –10 16 cm –3 ). The photoresponse of lateral PCSS is reported over the incident laser wavelength range (212–240 nm), energy per pulse (5–65 μJ), and DC bias (–1.2 to +1.2 kV). The PCSS device with the lowest boron and nitrogen impurity concentration achieves the highest normalized responsivity of 9.1 × 10 –8 A-cm/W-V, peak photocurrent of 8.0 A, and on/off ratio of 2.3 × 10 11 at a DC bias of +1.2 kV with the potential for even higher currents at increased DC bias. All PCSS display fast rise times (<3 ns), limited by the laser's rise time. However, photoresponse measurements reveal that higher impurity levels reduce the photocurrent and decrease the on/off ratio. Furthermore, these results highlight the performance advantages of using low background concentration type IIa diamond substrates for PCSS fabrication and present a promising route toward advanced high-power, high-speed diamond-based switches.

42 ENGINEERING↗
DOE OSTI2026

Effects of Uranium Impurities in Downblended HEU on HTGR Performance

Many advanced reactor designs require fuel enriched between 5% and 20% 235 U. To assist in producing fuel at these enrichment levels, government-owned inventories of highly enriched uranium can be downblended. However, fuel produced from these inventories contain uranium impurities that are not often found when enriching natural uranium or accounted for when modeling reactor cores. To address this concern, this work models reactor designs like the X-energy Xe-100 and the Ultra Safe Nuclear Company’s Micro Modular Reactor, and compares their performance with fuel from enriching natural uranium to fuel from downblended highly enriched uranium. This paper evaluates the models based on the effective neutron multiplication factor, k eff , effective delayed neutron fraction, β eff , and energy- and spatially dependent neutron flux, ϕ, as well as the fuel, coolant, moderator, and total reactivity temperature feedback coefficients, α F , α C , α M , and α T . The results show that the fuel from downblended highly enriched uranium inventories leads to differences in each of the metrics, especially in the keff values. In the Xe-100–like and Micro Modular Reactor–like models, k eff changes by about 1400 pcm and up to 1200 pcm, respectively. Total reactivity feedback coefficients α T are negative with the impure fuels and the keff values remain above 1 for each core configuration and fuel composition. These results show that the impure fuel compositions do not necessarily prevent achieving key design parameters, such as cycle length, or from operating in a safe condition.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Impurity radiation seeding of neoclassical tearing mode growth

Abstract The physics of neoclassical tearing modes (NTMs) is of great concern to tokamak plasma stability and performance, especially in the burning plasma regime. Whereas in many situations the seed events can be clearly identified, such as sawteeth and edge localized modes, the potential seeding mechanism of NTMs due to the resistive tearing instability driven by the impurity radiation cooling still needs more study. Recent NIMROD simulations have demonstrated that local impurity radiation cooling can drive the seed island growth and trigger the subsequent onset of NTM instability. The seed island is mainly driven by the local helical perturbation of the diamagnetic current induced by the perturbed pressure gradient as a result of the impurity radiative cooling on the rational surface. A heuristic closure for the neoclassical viscosity is adopted, and the seed island is further driven by the perturbed bootstrap current induced from the neoclassical electron viscous stress in the extended Ohm’s law. The growth rate of the NTM in simulations is found proportional to the electron neoclassical viscosity, and a theoretical neoclassical driving term is adopted to account for the nonlinear neoclassical island growth in the simulations.

Zeng, Shiyong (ORCID:000000017098818X)↗
DOE OSTI2025

Dynamic, symmetry-preserving, and hardware-adaptable circuits for quantum computing many-body states and correlators of the Anderson impurity model

We present a hardware-reconfigurable ansatz on N q -qubits for the variational preparation of many-body states of the Anderson impurity model (AIM) with N imp + N bath = N q /2 sites, which conserves total charge and spin z component within each variational search subspace. The many-body ground state of the AIM is determined as the minimum over all minima of O(N$^2_ q$) distinct charge-spin sectors. Hamiltonian expectation values are shown to require ω(N q ) < N meas. $\leqslant$ O(N imp N bath ) symmetry-preserving, parallelizable measurement circuits, each amenable to postselection. To obtain the one-particle impurity Green’s function we show how initial Krylov vectors can be computed via midcircuit measurement and how Lanczos iterations can be computed using the symmetry-preserving ansatz. For a single-impurity Anderson model with a number of bath sites increasing from one to seven, we show using numerical emulation that the ease of variational ground-state preparation is suggestive of linear scaling in circuit depth and subquartic scaling in optimizer complexity. We therefore expect that, combined with time-dependent methods for Green’s function computation, our ansatz provides a useful tool to account for electronic correlations on early fault-tolerant processors. Finally, with a view towards computing real materials properties of interest like magnetic susceptibilities and electron-hole propagators, we provide a straightforward method to compute many-body, time-dependent correlation functions using a combination of time evolution, midcircuit measurement-conditioned operations, and the Hadamard test.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Two-channel multi-impurity Kondo model: RKKY-induced criticality

We show that the Ruderman-Kittel-Kasua-Yoisida interaction between overscreened spins in two-channel Kondo impurity systems is a relevant perturbation when the number of impurities N is greater than 3 driving the system to a new quantum critical point with anomalous dimensions $\frac{1}{(𝑁+1)}$ for the spin operator and the Sommerfeld coefficient of the specific heat scales as 𝛾 ∼ 𝑇 −$\frac{3}{𝑁+1}$ . The critical point universal properties are relevant to many strong correlation problems, such as impurity placed in a Majorana metal and the multichannel Kondo lattice model of heavy fermion materials. In conclusion, we discuss relevance of our results for cluster DMFT studies of quantum criticality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electronic and optical properties of transition metal impurities in GaN and AlN

The optical properties of Cr(III) impurities are well studied and exploited in 𝛼−Al 2 ⁢O 3 , which enables ruby lasers. Photoluminescence spectra resembling the famous 1.78 eV emission of Cr in 𝛼−Al 2 ⁢O 3 have been observed in other wide-band-gap host materials, in particular AlN. However, it is unclear whether Cr would produce the same emission in the nitrides as in 𝛼−Al 2 ⁢O 3 , especially given the different local environment (tetrahedral vs octahedral coordination). We investigate the electronic and optical properties of transition metal substitutional impurities (Cr, Co, Ni, and Cu) in wurtzite GaN and AlN from first principles, utilizing hybrid density functional theory. We calculate the optical transition energies using a constrained occupation approach that accounts for the multideterminant nature of the excited states. Our results indicate that substitutional Cr(III) is not responsible for the emission near 1.78 eV observed in the nitrides. Among the examined impurities, only substitutional Co(II) produces emission near 1.78 eV. Based on the favorable properties of Co(II) (low formation energy, small Huang-Rhys factor, and an 𝑆 = 3/2 ground state) we propose it as a promising single-photon emitter or spin qubit. We additionally assign the PL peak observed near 1.05 eV in GaN and AlN to the 2 𝐸→ 4 𝐴 2 transition of the Ni(III) substitution.

36 MATERIALS SCIENCE↗
NASA NTRS1973

The influence of defects and impurities on the nucleation and growth of oriented films by evaporation

The influence of substrate imperfections on the nucleation and growth of fcc metals on alkali halides is discussed. Films deposited on well characterized substrated under well defined vacuum evaporation conditions are investigated. The experimental results of this work are correlated with similar work by other investigators. Models which have been proposed by various authors to explain experimental results are critically examined and areas of difficulty are pointed out. The influence of defects on nucleation rate and the orientation of the film is emphasized. Specific examples of impurity effects, irradiation effects and the influence of amorphous layers are discussed in detail. Evidence is shown that the formation of multiply twinned particles is a result of coalescence and growth. The only consistent model for the orienting influence of impurities is shown to be a chemical reaction effect. It is demonstrated that an alkali metal impurity is very likely responsible for the orienting influence of both water vapor exposure and irradiation. A negative result is found for the reported possibility of an orienting influence being transmitted through an amorphous layer.

Green, A. K.↗
NASA NTRS1973

Trace organic impurities in gaseous helium

A program to determine trace organic impurities present in helium has been initiated. The impurities were concentrated in a cryogenic trap to permit detection and identification by a gas chromatographic-mass spectrometric technique. Gaseous helium (GHe) exhibited 63 GC flame ionization response peaks. Relative GC peak heights and identifications of 25 major impurities by their mass spectra are given. As an aid to further investigation, identities are proposed for 16 other components, and their mass spectra are given.

Schehl, T. A.↗
NASA NTRS1975

Interfacial impurities and the reaction between Si and evaporated Al

As commonly formed, the interface between substrate Si and evaporated Al is laden with impurities. Subsequent heating causes modest dissolution of Si into solid Al, the dissolution morphology being influenced by the interface impurities. In the present experiments, the amount of Si dissolving was considerably enhanced, causing sufficient interface movement to carry most interfaces clear of the original impurities. Under these conditions, the Si/Al interface assumes, during brief heat treatment, a simple shape composed of a few 111 plane-type facets. Such Si/Al interfaces produced in situ should be useful for low-temperature solid-state growth of Si.

Best, J. S.↗
NASA NTRS1976

Effect of ester impurities in PMR-polyimide resin

Spectral and chomatographic studies were conducted which established the presence of tri- and tetraester impurities in aged monomer solutions employed in fabrication of PMR-polyimide resin composites. The equilibrium constant and apparent rate of the esterification were determined. It was demonstrated, using differential scanning calorimetry, that the ortho-ester moiety of these impurities does not completely react at typical cure conditions. It is concluded that voids formed in composites fabricated with aged monomer solution are due to gaseous decomposition products evolved by ester impurities and/or unreacted amine during elevated temperature post-cure treatment.

Lauver, R. W.↗
NASA NTRS1977

The development of a potassium-sulfide glass fiber cell and studies on impurities in alkali metal-sulfur cells

Potassium sulfur rechargeable cells, having as the electrolyte the thin walls of hollow glass fibers made from permeable glass, were developed. The cells had short lives, probably due to the construction materials and impurities in the potassium. The effect of the impurities in the analogous NA-S system was studied. Calcium, potassium, and NaOH/oxide impurities caused increased resistance or corrosion of the glass fibers. For long lived cell operation, the Na must contain less than 1 ppm Ca and less than a few ppm of hydroxide/oxide. Up to 150 ppm K can be tolerated. After purification of the Na anolyte, cell lifetimes in excess of 1000 deep charge-discharge cycles or over 8 months on continuous cycling at 10-30 percent depth of discharge were obtained.

Tsang, F. Y.↗
NASA NTRS1976

An investigation of impurity redistribution in diffused layer on /n+/-p silicon solar cells parameters

Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.

Wang, E. Y.↗
NASA NTRS1979

Study of the Effects of Impurities on the Properties of Silicon Materials and Performance of Silicon Solar Cell

Numerical solutions were obtained from the exact one dimensional transmission line circuit model to study the following effects on the terrestrial performance of silicon solar cells: interband Auger recombination; surface recombination at the contact interfaces; enhanced metallic impurity solubility; diffusion profiles; and defect-impurity recombination centers. Thermal recombination parameters of titanium impurity in silicon were estimated from recent experimental data. Based on those parameters, computer model calculations showed that titanium concentration must be kept below 6x10 to the 12th power Ti/cu cm in order to achieve 16% AM1 efficiency in a silicon solar cell of 250 micrometers thick and 1.5 ohm-cm resistivity.

Sah, C. T.↗
NASA NTRS1979

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

Hopkins, R. H.↗
NASA NTRS1980

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

Sah, C. T.↗
NASA NTRS1980

Analysis of the effects of impurities in silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).

Wohlgemuth, J.↗
NASA NTRS1981

The effects of trace impurities in coal-derived liquid fuels on deposition and accelerated high temperature corrosion of cast superalloys

The effects of trace metal impurities in coal-derived liquids on deposition, high temperature corrosion and fouling were examined. Alloys were burner rig tested from 800 to 1100 C and corrosion was evaluated as a function of potential impurities. Actual and doped fuel test were used to define an empirical life prediction equation. An evaluation of inhibitors to reduce or eliminate accelerated corrosion was made. Barium and strontium were found to limit attack. Intermittent application of the inhibitors or silicon additions were found to be effective techniques for controlling deposition without losing the inhibitor benefits. A computer program was used to predict the dew points and compositions of deposits. These predictions were confirmed in deposition test. The potential for such deposits to plug cooling holes of turbine airfoils was evaluated. Tests indicated that, while a potential problem exists, it strongly depended on minor impurity variations.

Lowell, C. E.↗