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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Computed Tomography Support for Microgravity Materials Science Experiments

The accurate measurement of density in both liquid and solid samples is of considerable interest to Principal Investigators with materials science experiments slated for the ISS. The work to be described is an innovative application of a conventional industrial nondestructive evaluation instrument. Traditional applications of industrial computed tomography (CT) rely on reconstructing cross sections of large structures to provide two-dimensional planar views which can identify defects such as porosity, or other material anomalies. This has been done on microgravity materials science experiments to check the integrity of ampoule-cartridge assemblies for safety purposes. With a substantially monoenergetic flux, as can be obtained with a radioactive cobalt source, there will be a direct correlation between absorption and density. Under such conditions it then becomes possible to make accurate measurements of density throughout a sample, and even when the sample itself is enclosed within a furnace and a safety required cartridge. Such a system has been installed at Kennedy Space Center (KSC) and is available to PIs to examine samples before and after flight. The CT system is being used to provide density information for two purposes. Firstly, the determination of density changes from liquid to solid is vital information to the PI for purposes of modeling the solidification behavior of his sample, and to engineers who have to design containment ampoules and must allow for shrinkage and other volume changes that may occur during processing. While such information can be obtained by pycnometric measurements, the possibility of using a furnace installed on the CT system enables one to examine potentially dangerous materials having high vapor pressures, while not needing visible access to the material. In addition, uniform temperature can readily be obtained, and the system can be controlled to ramp up, hold, and ramp down while collecting data over a wide range of parameters automatically. Results of initial tests on low melting point elements such as gallium, indium and tin will be presented, and the intent is to proceed to compounds such as InSb, HgCdTe and CdTe. Alloys such as Pb-Sb (PI - Poirier, U AZ) and Cu-Al (PI - Trivedi, Ames Lab.), which are the subjects of flight experiments, will also be examined. The second application is the conversion of measured density values directly to composition. This was successfully done with the mercury cadmium telluride alloys grown on the second and fourth United States Microgravity Payload (USMP-2 and USMP-4) missions by Lehoczky. CdTe values along the length of the boules were obtained at KSC prior to cutting the sample, and could have been obtained prior to its removal from the cartridge and ampoule. Examples of the data obtained will be shown. It is anticipated that several of the materials science PIs will avail themselves of the technique described, initially for determining densities prior to flight, and then to acquire early quantitative data on the compositional variation within their samples.

Gillies, Donald C.↗
DOE OSTI2025

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)⁢N light-emitting diodes

Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 ⁢Ga 1−𝑥⁢ N/Ga⁢N single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 ⁢Ga 1−𝑥 ⁢N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 ⁢Ga 1−𝑥 ⁢N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)⁢N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Advances in thin-film solar cells for lightweight space photovoltaic power

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, Geoffrey A.↗
NASA NTRS1994

High-performance, flexible, deployable array development for space applications

Flexible, deployable arrays are an attractive alternative to conventional solar arrays for near-term and future space power applications, particularly due to their potential for high specific power and low storage volume. Combined with low-cost flexible thin-film photovoltaics, these arrays have the potential to become an enabling or an enhancing technology for many missions. In order to expedite the acceptance of thin-film photovoltaics for space applications, however, parallel development of flexible photovoltaics and the corresponding deployable structure is essential. Many innovative technologies must be incorporated in these arrays to ensure a significant performance increase over conventional technologies. For example, innovative mechanisms which employ shape memory alloys for storage latches, deployment mechanisms, and array positioning gimbals can be incorporated into flexible array design with significant improvement in the areas of cost, weight, and reliability. This paper discusses recent activities at Martin Marietta regarding the development of flexible, deployable solar array technology. Particular emphasis is placed on the novel use of shape memory alloys for lightweight deployment elements to improve the overall specific power of the array. Array performance projections with flexible thin-film copper-indium-diselenide (CIS) are presented, and government-sponsored solar array programs recently initiated at Martin Marietta through NASA and Air Force Phillips Laboratory are discussed.

Gehling, Russell N.↗
NASA NTRS1993

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.

Tatsumi, Masami↗
DOE OSTI2022

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

Solidification of hypermonotectic Al-In alloys under microgravity conditions

Four samples of the Al-In system having monotectic and hypermonotectic compositions that were solidified under microgravity during the NASA-SPAR IX flight of January 20, 1981, are considered. The experimental thermal and physicochemical conditions that were actually achieved are analyzed. Radiographic and metallographic observations of the samples reveal a nonregular dispersed primary phase inside the monotectic matrix. These observations are discussed in relation to capillarity and solidification aspects. A key finding is the preservation of a certain degree of dispersion of the indium primary phase. This result differs fundamentally from the results obtained under microgravity conditions on the same system and compositions (Gelles and Markworth, 1980; Alborn and Loehberg, 1979). The results are seen as clearly establishing that the space environment can be used to obtain dispersed structures from hypermonotectic alloys.

Potard, C.↗
NASA NTRS1998

Strained quantum well photovoltaic energy converter

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Freundlich, Alexandre↗
NASA NTRS1991

Small Business Innovations (Photodetector)

Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.

Source record↗
NASA NTRS1970

Visible light electroluminescent diodes of indium-gallium phosphide

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Clough, R.↗
DOE OSTI2025

In-situ formation of stable interface towards Li-in anode for halide solid-state electrolyte

Halide-based solid-state electrolytes (SSEs) are promising candidates for next-generation all-solid-state lithium batteries (ASSLBs) due to their high ionic conductivity and chemical stability. However, their poor interfacial compatibility with lithium metal anode and Li-In alloy significantly hinder practical application due to the requirement for a protective interlayer. In this study, a novel approach to overcome this limitation is presented by introducing iron (Fe) doping into Li 3 InCl 6 (LIC), which enables direct and stable contact with lithium-indium (Li-In) metal without a protective interlayer. Thermodynamic and computational analyses identified Fe 3+ as a suitable dopant based on its similar reduction potential to In 3+ and structural compatibility within the halide lattice. The synthesized 10 at. % Fe-doped LIC exhibits high phase purity, retained ionic conductivity, and notably improved interfacial stability. Full-cell tests using Fe-LIC achieve over 300 cycles with 80 % capacity retention. At the same time, symmetric Li-In/ Fe-LIC/ Li-In cells sustain over 500 h of operation, representing the first reported long-term cycling of LIC-based ASSLB without a protective interlayer. In conclusion, this work establishes Fe doping as an effective strategy to stabilize halide SSEs of In system against Li-In alloy, thereby simplifying cell architecture and advancing the development of safer, high-performance halide-based solid-state electrolytes.

Halide-based solid-state electrolytes↗
NASA NTRS2013

Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers

A document describes the low-cost manufacturing of C103 niobium alloy combustion chambers, and the use of a high-temperature, oxidation-resistant coating that is superior to the standard silicide coating. The manufacturing process involved low-temperature spray deposition of C103 on removable plastic mandrels produced by rapid prototyping. Thin, vapor-deposited platinum-indium coatings were shown to substantially improve oxidation resistance relative to the standard silicide coating. Development of different low-cost plastic thrust chamber mandrel materials and prototyping processes (selective laser sintering and stereolithography) yielded mandrels with good dimensional accuracy (within a couple of mils) for this stage of development. The feasibility of using the kinetic metallization cold-spray process for fabrication of free-standing C1O3 thrusters on removable plastic mandrels was also demonstrated. The ambient and elevated temperature mechanical properties of the material were shown to be reasonably good relative to conventionally processed C103, but the greatest potential benefit is that coldsprayed chambers require minimal post-process machining, resulting in substantially lower machining and material costs. The platinum-iridium coating was shown to provide greatly increased oxidation resistance over the silicide when evaluated through oxyacetylene torch testing to as high as 300 F (= 150 C). The iridium component minimizes reaction with the niobium alloy chamber at high temperatures, and provides the high-temperature oxidation resistance needed at the throat.

Williams, Brian E.↗
DOE OSTI2022

Shape-Controlled Synthesis of Copper Nanocrystals for Plasmonic, Biomedical, and Electrocatalytic Applications

As a metal that can occur in nature in the elemental form, copper (Cu) has been used by humans since ca. 8000 BC. With most properties matching those of Ag and Au, Cu has played a more significant role in commercial applications owing to its much higher (the 25th among all elements) abundance in Earth’s crust and thus more affordable price. In addition to its common use as a conductor of heat and electricity, it is a constituent of various metal alloys for hardware, coins, strain gauges, and thermocouples. Bulk Cu is also widely utilized as a building material. When downsized to the nanoscale, Cu and Cu-based structures have found widespread use in applications ranging from electronics to optoelectronics, plasmonics, catalysis, sensing, and biomedicine. Besides Ag and Au, for example, Cu is another metal known for its localized surface plasmon resonance (LSPR) in the visible and near-infrared regions when prepared as nanocrystals. As a potential replacement for indium–tin oxide (ITO) films, polymer coatings containing Cu nanowires are strong candidates for the fabrication of transparent and flexible electrodes key to touchscreen display and related applications. The commercial catalysts for water–gas shift and gas detoxification reactions are also based on Cu nanoparticles. Most recently, Cu nanocrystals have attracted considerable interest for their superior selectivity toward hydrocarbons and multicarbon species during the electrochemical reduction of CO 2 . The success of all these applications critically depends on our ability to control the shape and surface structure of the nanocrystals. Relative to Ag and Au, it is more challenging to generate Cu-based nanocrystals using colloidal methods due to its lower reduction potential and greater vulnerability to oxidation. Here, in this account, we discuss recent progress in the colloidal synthesis of Cu nanocrystals with controlled shapes for plasmonic, biomedical, and catalytic applications. With glucose serving as a reducing agent, Cu nanocrystals bearing a twinned or single-crystal structure can be synthesized using an aqueous system with the assistance of hexadecylamine (HDA). In this synthetic protocol, HDA not only passivates the surface to protect the nanocrystals from oxidation but also manipulates the reduction kinetics of Cu(II) precursor through coordination and an increase of solution pH. Typical products include nanocubes and penta-twinned nanowires whose surfaces are dominated by {100} facets. When seeds produced either in situ or ex situ are introduced, Cu-based nanocrystals featuring a singly twinned, core–shell, or Janus structure can be readily synthesized. Aside from segmented structures, Cu-based alloys with various noble metals can be synthesized through coreduction or a galvanic replacement reaction with preformed Cu nanocrystals. By controlling the size and/or shape of Cu nanocrystals, their LSPR peaks can be tuned into the near-infrared region, making them promising candidates for optical imaging contrast enhancement and photothermal treatment. The inclusion of the 64 Cu isotope makes them immediately useful in positron emission tomography and thus image-guided therapy. The surface structure, elemental distribution, and valence state of Cu-based nanocrystals can all be tailored to augment their electrocatalytic performance. It is hoped that this Account will inspire more studies into the development of rational methods capable of producing Cu-based nanocrystals with diverse and well-controlled shapes, internal structures, and compositions for a broader range of applications.

36 MATERIALS SCIENCE↗
NASA NTRS2010

MISSE 6, 7 and 8 Materials Sample Experiments from the International Space Station Materials and Processes Team

The International Space Station Materials and Processes (ISS M&P) team has multiple material samples on MISSE 6, 7 and 8 to observe Low Earth Orbit (LEO) environmental effects on Space Station materials. Optical properties, thickness/mass loss, surface elemental analysis, visual and microscopic analysis for surface change are some of the techniques employed in this investigation. The ISS M&P team has participated in previous MISSE activities in order to better characterize the LEO effects on Space Station materials. This investigation will further this effort. Results for the following MISSE 6 samples materials will be presented: a comparison of anodize and chemical conversion coatings on various aluminum alloys, electroless nickel; AZ93 white ceramic thermal control coating with and without Teflon; Hyzod(TM) polycarbonate used to temporarily protect ISS windows; Russian quartz window material; reformulated Teflon (TM) coated Beta Cloth (Teflon TM without perfluorooctanoic acid (PFOA)) and a Dutch version of beta cloth. Discussion for current and future MISSE materials experiments will be presented. MISSE 7 samples are: deionized water sealed anodized aluminum Photofoil(TM); indium tin oxide (ITO)- coated Kapton(TM) used as thermo-optical surfaces; mechanically scribed tin-plated beryllium-copper samples for "tin pest" growth ( alpha/Beta transformation); Crew Exploration Vehicle (CEV) parachute soft goods. MISSE 8 sample: exposed "scrim cloth" (fiberglass weave) from the ISS solar array wing material, Davlyn fiberglass sleeve material, Permacel and Intertape protective tapes, and ITO-coated Kapton.

Kravchenko, Michael↗
DOE OSTI2022

Polymer-Stabilized Liquid Metal Nanoparticles as a Scalable Current Collector Engineering Approach Enabling Lithium Metal Anodes

Dendrites and dead lithium formation over prolonged cycling have long been challenges that hinder the safe implementation of metallic Li anodes. In this study, we employ polymer-stabilized liquid metal nanoparticles (LM-P NPs) of eutectic gallium indium (EGaIn) to create uniform Li nucleation sites enabling homogeneous lithium electrodeposition. Block copolymers of poly(ethylene oxide) and poly(acrylic acid) (PEO-b-PAA) were grafted onto the EGaIn surface, forming stabilized, well-dispersed NPs. Using a scalable spray coating approach, LM-P NPs were fabricated on copper current collectors, providing lithiophilic PEO sites and interactive carboxyl groups to guide Li deposition. The Li-EGaIn alloying process greatly reduced the Li + diffusion barrier, enabling fast Li transport through the coating layer, resulting in decreased nucleation overpotential. Therefore, about five times lower Li nucleation overpotential was obtained on the LM-P modified Cu with an optimal composition of the polymers than the bare Cu substrates. DFT computations was used to reveal the binding properties between the LM-P layer and Li. Due to the regulated Li plating/stripping process, as-obtained 30 μm Li anodes paired with LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM8 11 ) with a negative/positive electrode capacity (N/P) ratio ~ 10 exhibited stable cycling performance at 0.5C for over 250 cycles, with an average Coulombic efficiency of 99.55%. Ultrathin Li (1 μm) anodes with an N/P ratio ~ 0.6 were also demonstrated in Li|LiFePO 4 cells, which examined the stabilization of Li by LM-P NPs and monitored practical loadings of Li anodes that are close to anode-free systems.

25 ENERGY STORAGE↗
DOE OSTI2023

Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRSDate not supplied

Crystal Growth in the SUBSA furnace in MSG: 2002 to 2022

In 2002, the investigation “Solidification Using a Baffle In Sealed Ampoules (SUBSA)” was the first investigation to utilize the Microgravity Science Glovebox (MSG) Facility on the International Space Station (ISS). The SUBSA furnace was designed for growth of indium antimonide. It features a transparent section, which allows a side view of the melt, the solid-liquid (SL) interface and the growing crystal. In 2002, four Te-doped and three Zn-doped InSb crystals were grown in microgravity. Subsequently, the SUBSA furnace was used in several materials science investigations, including growing the radiation detector materials, InI and Cs2LiYCl6:Ce from the melt and vapor phase (2017 to 2019) and “Brazing of Aluminum alloys in Space (BRAINS)”. A review of the SUBSA furnace features and parameters will be presented, including the design of the growth ampoules, charge preparation, and the procedures used to grow InSb (in 2002) and InI (in 2019).

Aleksandar Ostrogorsky↗