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Stellarator Theory and Non-Axisymmetric Shaping (Final Technical Report)
Divertors are a critical concept for all magnetically confined fusion systems. The W7-X stellarator has an island divertor as do many of the privately funded stellarator reactor designs, but non-resonant divertors have many advantages, which are defined in the paper OSTI ID: 3021689, “Stellarators with enhanced tritium confinement and edge radiation control” and discussed in OSTI ID: 3021687, 3021688, 3021692, and 3021695. The three basic advantages are: (1) Resilience, the location at which the diverted plasma reaches the walls is insensitive to plasma conditions, unlike island divertors. (2) The width of the region at the plasma edge that flows into the divertor has a controllable width. It can be made sufficiently broad to avoid neutrals impending on the plasma from charge exchanging with high energy plasma particles. The resulting high energy neutrals erode the walls. (3) The controllable width and confinement of non-resonant divertors allow high-Z impurities to be added. The shortness of their confinement time limits their diffusion into the plasma interior. High-Z impurity radiation at the plasma edge seems the only way to sufficiently spread the outcoming power over the walls. The lack of experiments is a major impediment to application of non-resonant divertors, although the small experiment STAR_LITE is being built at Hampton University to study them.
Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells
The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.
Impurity transport in the pedestal of H-mode plasmas with resonant magnetic perturbations
Experiments on DIII-D show that resonant magnetic perturbations (RMPs) reduce the impurity confinement time in the H-mode pedestal below that of naturally ELMy plasmas. STRAHL modeling of discharges with aluminum laser blow off (LBO) injection show increased diffusion in the pedestal of H-mode discharges with RMPs. The increased diffusion from the RMPs provides improved impurity control compared to the naturally ELMy discharges and prevents the buildup of impurities near the edge of the plasma. Tungsten LBO injection into discharges with and without RMPs led to striking differences in the evolution of the discharge. The naturally ELMy discharge became ELM free and showed an increase in edge radiation, leading to the eventual radiative collapse of the plasma. Injecting a similar number ofWparticles into discharges with RMPs, either with or without ELMs, led to a measurable accumulation of core W but did not significantly impact the evolution of the discharge. Furthermore, these results indicate that RMPs are beneficial for controlling the buildup of impurities in the pedestal region of the plasma.
Investigation of W-SiC compositionally graded films as a divertor material
W-SiC composite material is a promising plasma-facing material candidate alternative to pure W due to the low neutron activation, low impurity radiation, and low tritium diffusivity of SiC while leveraging the high erosion resistance of the W armor. Additionally, W and SiC have high thermomechanical compatibility given their similar thermal expansion rates. The present study addresses the synthesis and performance of compositionally graded W-SiC films fabricated by pulsed-DC magnetron sputtering. Compositional gradients were characterized using transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS), and crystallographic information was obtained using electron diffraction and X-ray diffraction (XRD). Samples were exposed to L-mode deuterium plasma discharges in the DIII-D tokamak using the Divertor Material Evaluation System (DiMES). Post-mortem characterizations were performed using scanning electron microscopy (SEM) and XRD. Electron diffraction and XRD showed that the compositionally graded W-SiC films were composed of polycrystalline W and amorphous SiC with amorphous W+SiC interlayers. No macroscopic delamination or microstructural changes were observed under mild exposure conditions. Here, this study serves as a preliminary examination of W-SiC compositionally graded composites as a potential candidate divertor material in future tokamak devices.
Oxygen tracer diffusion in single-crystal alumina
Oxygen tracer diffusion coefficients are determined in single-crystal alumina samples with differing dopant levels using the gas-exchange technique. The diffusion direction is parallel to the c-axis and the ambient PO2 is 1 atm (100,000 Pa) for all experiments except a single run with a low PO2, approximately 10 to the -15th atm (10 to the -10th Pa) produced by a CO/CO2 mixture. The diffusion is insensitive to both impurities and ambient PO2. The insensitivities are discussed in terms of point-defect clustering. Prior tracer studies are compared and discussed.
Oxide dissolution and oxygen diffusion scenarios in niobium and implications on the Bean–Livingston barrier in superconducting cavities
We generalize a native Nb2O5 dissolution model [G. Ciovati, Appl. Phys. Lett. 89, 022507 (2006)] to sequential overlayer dissolutions, multilayer dissolution, and realistic temperature profiles, which may be applicable to other materials. The model is applied to secondary ion mass spectrometry depth profile measurements for varying temperature profiles and two-step oxide dissolution in Nb and found to agree well. In the context of the Meissner screening response due to impurity profiles on the length scale of the London penetration depth, the shallow diffusion of O impurities results in a substantial decrease in the peak supercurrent density near the surface. In this framework, oxide dissolution and oxygen diffusion can account for a rise in peak supportable magnetic field in SRF cavities with baking time and a suppression after the optimal baking time is reached, in good agreement with peak-field baking temperatures and times as well as recent quench field measurements.
Oxide dissolution and oxygen diffusion scenarios in niobium and implications on the Bean–Livingston barrier in superconducting cavities
We generalize a native Nb 2 O 5 dissolution model [G. Ciovati, Appl. Phys. Lett. 89, 022507 (2006)] to sequential overlayer dissolutions, multilayer dissolution, and realistic temperature profiles, which may be applicable to other materials. The model is applied to secondary ion mass spectrometry depth profile measurements for varying temperature profiles and two-step oxide dissolution in Nb and found to agree well. In the context of the Meissner screening response due to impurity profiles on the length scale of the London penetration depth, the shallow diffusion of O impurities results in a substantial decrease in the peak supercurrent density near the surface. In this framework, oxide dissolution and oxygen diffusion can account for a rise in peak supportable magnetic field in SRF cavities with baking time and a suppression after the optimal baking time is reached, in good agreement with peak-field baking temperatures and times as well as recent quench field measurements.
A study of the properties of beryllium doped silicon with particular emphasis on diffusion mechanisms: Profiles of depth dependent conductivity as determined by electrical surface probes
Very large diffusion coefficients were encountered and required the determination of impurity profiles for samples approximately 1 cm thick. Since conductivity values are readily converted into concentrations of electrically active impurities, the major problem became that of accurately determining the conductivity profiles of beryllium diffused silicon samples. Four-point probe measurements on samples having depth conductivities are interpreted in terms of conductivity profiles, based on an exact solution of the problem of exponentially depth dependent conductivity. Applications include surface conductivity determination where the form of the conductivity profile is known, and conductivity profile determination from probe measurements taken as the sample surface is progressively lapped away. The application is limited to samples having conductivity monotonically decreasing with depth from the probed surface.
Spin diffusion in the Phosphorus-31 NMR relaxation in a layered crystalline α-Sn(IV) phosphate contaminated by paramagnetic impurities
The study of a layered crystalline Sn(IV) phosphate by solid-state NMR has demonstrated that the 31 P T 1 relaxation of phosphate groups, dependent on spinning rate is completely controlled by the limited spin diffusion to paramagnetic ions found by EPR. The spin-diffusion constant, D(SD), was estimated as 2.04 10 –14 cm 2 s –1 . Finally, the conclusion was supported by the 31 P T 1 time measurements in zirconium phosphate 1–1, also showing paramagnetic ions and in diamagnetic compound (NH 4 ) 2 HPO 4 .
Developing machine-learning potentials to study properties of the tritium formation and diffusivity in pure and defective Zircaloy-4 getters
Objective of this work was to study the formation of Sn impurity and hydride phases in Zr and study their impacts on the diffusion kinetics of 3 H by using DFT based ML approach. By implementing deep neural potential (DNP) technique, we developed potential for Zr-H and Sn impurity systems and validated the DNP by using DFT results. We found that by implementing machine learning approach, it is possible to achieve accuracy comparable to DFT level for the more realistic models by using less computational time and resources.
Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells
Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.
Backside damage-gettering in cast polycrystalline silicon
The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.
Making Space Travel to Jupiter Possible
From man landing on the moon to a simple satellite being launched into orbit, many incredible space accomplishments have been witnessed by us all. However, what goes un-noticed to the common man is the extensive research and testing that lasts months, years, and even decades. Much of this required research just so happens to take place in the corridors of the Glen Research Center building number 49. In the Advanced Materials division of G.R.C., a number of researchers have the responsibility of discovering which metal, ceramic, or polymer is best for a specific application. Under the guidance of mentor extraordinaire Frank Ritzert, I am involved in many critical projects dealing with refractory metals, two of which I will mention in this report. The Jupiter Icy Moons Orbiter (JIMO) project actually was under full swing back in the 50's and early 60's. To enable the 14 year trek to the icy moons of Europa, Callisto, and Ganymede, nuclear propulsion methods were selected. Due to the extreme temperature of the reactor and the extended time period, a refractory metal would need to be implemented. After years of research and progress, the program was suddenly canceled. About a decade ago, the JIMO project was re-instated and now has a goal for departure around 2014. However, a few obstacles lie in our way concerning the use of refractory metals. In certain areas of the orbiter a joint is required between the refractories and other less dense metals. Two of these joints are with nickel based super alloys. Being an intern for Frank Ritzert, the refractory metals expert, I have the opportunity to develop the best method to braze refractory metals to Nickel 201. This involves the actual brazing, electron microscopy and reporting the results. My second project involves a certain part of the orbiter where Niobium 1Zirconium, a refractory metal, is joined with Hastelloy-X a Ni based metal. Small quantities of oxygen, helium and other impurities in the Ni alloy could diffuse into the Nb1Zr causing imbrittlement and possibly major failure. I will be testing the effects of Hast-X on Nb1Zr in a high temperature for 10, 50, 100, and 500 hours. After the samples are run through the heat treatment, strength and chemistry will be tested and reported. My appreciation for the research that goes behind every project has and will continue to grow. By digging through old documents written in the 50's and 60's, scouring through forgotten closets, and learning from those with experience in the refractory metals, I am bound to have an incredible learning experience here at NASA.
Lifetime and diffusion length measurements on silicon material and solar cells
Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plate arrays. Lifetime measurements were made using a steady-state photoconductivity method. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results are compared with those obtained using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.
Smooth, homogeneous, high-purity Nb 3 Sn superconducting RF resonant cavity by seed-free electrochemical synthesis
Abstract Workbench-size particle accelerators, enabled by Nb 3 Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and x-rays. Thin-film Nb 3 Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb 3 Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb 3 Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb 3 Sn by five times compared to typical vapor-diffused Nb 3 Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb 3 Sn. We have successfully applied this Nb 3 Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb 3 Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.
Turbulence-reduced high-performance scenarios in Wendelstein 7-X
In the Wendelstein 7-X (W7-X) stellarator, turbulence is the dominant transport mechanism in most discharges. This leads to a 'clamping' of ion temperature over a wide range of heating power, predominantly flat density profiles where hollow profiles driven by neoclassical thermo-diffusion would be expected and by rapid impurity transport in injection experiments. Significantly reduced turbulent transport is observed in the presence of strong core density gradients found transiently after core pellet injection and irregularly after boronisation or boron pellet injection. Density peaking is also achieved in a controlled manner in purely neutral beam heated discharges where particle transport analysis reveals an abrupt reduction in the main-ion particle flux leading to significant density profile peaking not explained by the NBI particle source alone. The plasmas exhibit a heat diffusivity of around $\chi = 0.25 \pm 0.1\,\mathrm{m}^2\ \mathrm{s}^{-1}$ at mid radius, a factor of around 4 lower than ECRH dominated discharges. Despite the improved confinement, the achieved ion temperature is limited by broader heat deposition and the lower power-per-particle given the higher density. This is overcome with limited reintroduction of ECRH power, where the low heat diffusivity diffusivity is maintained, the density rise supressed and ion temperatures above the clamping limit are achieved. The applicability of these plasmas for a high performance scenario on transport relevant time scales is assessed, including initial predictions for planned heating upgrades of W7-X, based on a range of assumptions about particle transport.
Development of ultra-pure gadolinium sulfate for the Super-Kamiokande gadolinium project
This paper reports the development and detailed properties of about 13 metric tons of gadolinium sulfate octahydrate, Gd 2 (SO 4 ) 3 • 8H 2 O, which has been dissolved into Super-Kamiokande (SK) in the summer of 2020. We evaluate the impact of radioactive impurities in Gd 2 (SO 4 ) 3 • 8H 2 O on diffuse supernova neutrino background searches and solar neutrino observation and confirm the need to reduce radioactive and fluorescent impurities by about three orders of magnitude from commercially available high-purity Gd 2 (SO 4 ) 3 • 8H 2 O. In order to produce ultra-high-purity Gd 2 (SO 4 ) 3 • 8H 2 O, we have developed a method to remove impurities from gadolinium oxide, Gd 2 O 3 , consisting of acid dissolution, solvent extraction, and pH control processes, followed by a high-purity sulfation process. All of the produced ultra-high-purity Gd 2 (SO 4 ) 3 • 8H 2 O is assayed by inductively coupled plasma mass spectrometry and high-purity germanium detectors to evaluate its quality. Because of the long measurement time of high-purity germanium detectors, we have employed several underground laboratories for making parallel measurements including the Laboratorio Subterráneo de Canfranc in Spain, Boulby in the UK, and Kamioka in Japan. In the first half of production, the measured batch purities were found to be consistent with the specifications. However, in the latter half, the Gd 2 (SO 4 ) 3 • 8H 2 O contained one order of magnitude more 228Ra than the budgeted mean contamination. This was correlated with the corresponding characteristics of the raw material Gd 2 O 3 , in which an intrinsically large contamination was present. Based on their modest impact on SK physics, they were nevertheless introduced into the detector. To reduce 228 Ra for the next stage of gadolinium loading to SK, a new process has been successfully established.