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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗
DOE OSTI2024

Geomagnetic Disturbance Uncertainty Quantification Modeling: An Electromagnetic Transient and Steady-State Simulation Based Approach

Geomagnetic disturbances have been shown to disrupt the operation of the bulk electrical system through low-frequency effects in the earth's magnetic field that in turn induce changing electrical fields on the earth's surface. As a result, geomagnetically induced currents flow in transmission lines, introducing the risk for widespread damage to high-voltage transformers and voltage collapse due to induced reactive power loss. In a previous paper, the authors showed how certain modeling assumptions can lead to results that are unacceptable in certain edge case scenarios. In this paper, the authors build on their previous results using modeling uncertainty quantification in order to compare the results from electromagnetic transient program modeling software, ATP, to the positive-sequence calculation software, PowerWorld.

Bretas, Arturo Suman↗
DOE OSTI2021

Numerical Simulations of the Geospace Response to the Arrival of an Idealized Perfect Interplanetary Coronal Mass Ejection

Abstract Previously, Tsurutani and Lakhina (2014, https://doi.org/10.1002/2013GL058825 ) created estimates for a “perfect” interplanetary coronal mass ejection and performed simple calculations for the response of geospace, including . In this study, these estimates are used to drive a coupled magnetohydrodynamic‐ring current‐ionosphere model of geospace to obtain more physically accurate estimates of the geospace response to such an event. The sudden impulse phase is examined and compared to the estimations of Tsurutani and Lakhina (2014, https://doi.org/10.1002/2013GL058825 ). The physics‐based simulation yields similar estimates for Dst rise, magnetopause compression, and equatorial values as the previous study. However, results diverge away from the equator. values in excess of 30 nT/s are found as low as magnetic latitude. Under southward interplanetary magnetic field conditions, magnetopause erosion combines with strong region one Birkeland currents to intensify the response. Values obtained here surpass those found in historically recorded events and set the upper threshold of extreme geomagnetically induced current activity at Earth.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Energy-efficient generation of skyrmion phases in Co/Ni/Pt-based multilayers using Joule heating

We have studied the effects of electrical current pulses on skyrmion formation in a series of Co/Ni/Pt-based multilayers. Transmission x-ray microscopy reveals that by applying electrical current pulses of duration and current density on the order of 50 μs and 1.7 × 10 10 A/m 2 , respectively, in an applied magnetic field of 50 mT, stripe-to-skyrmion transformations are attained. The skyrmions formed by such pulses remain stable across a wide range of magnetic fields, including zero field. We attribute the transformation primarily to current-induced Joule heating on the order of ~128 K. Reducing the magnetic moment and perpendicular anisotropy using thin rare-earth spacers reduces the pulse duration, current density, and magnetic field necessary to 25 µs, 2.4 × 10 9 A/m 2 , and 27 mT, respectively. Finally, these findings show that energetic inputs allow for the formation of skyrmion phases in a broad class of materials, and that material properties can be tuned to yield more energy-efficient access to skyrmion phases.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗
DOE OSTI2020

Gyrokinetic particle simulations of interactions between energetic particles and magnetic islands induced by neoclassical tearing modes

Interactions between energetic particles (EPs) and neoclassical tearing mode (NTM) islands in the DIII-D tokamak are studied using the global gyrokinetic toroidal code (GTC). GTC simulations find that the EP radial profile is partially flattened within the magnetic island regions and that there are stochastic regions in the particle phase space. Radial particle flux is induced mainly around the magnetic island regions and decreases with time to almost zero when the initial EP distribution achieves a new steady-state in the absence of EP sources. Stochastic regions of magnetic field lines induced by the superposition of multiple islands have weak effects on the particle flux when the width of stochastic regions is smaller than the EP drift orbit width. In conclusion, the perturbed parallel EP current induced by the magnetic islands has weak stabilizing effects on the linear growth rate of the NTM instability in this DIII-D experiment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, in this work, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H k 2 = 0.47 mT) and first-order ($H^{eff}_{k_1}$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Chiral kinetic theory of anomalous transport induced by torsion

In Weyl semimetals subjected to torsion, there are two different kinds of chirality: (i) The (coordinate-space) shape of the twisted crystal is chiral and (ii) the momentum space contains chiral quasiparticles. Here we construct a general kinetic theory of anomalous transport using the phase space (coordinate and momentum spaces combined) Berry curvature induced by torsion in Weyl systems. We describe how torsion generates the chiral chemical potential and thus leads to the chiral magnetic effect (CME) in the presence of a background magnetic field. We propose to measure the CME current induced by the torsion as a way to detect the anomalous coupling between the coordinate-space and momentum-space chiralities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

An asymptotic Grad–Shafranov equation for quasisymmetric stellarators

A first-order model is derived for quasisymmetric stellarators where the vacuum field due to coils is dominant, but plasma-current-induced terms are not negligible and can contribute to magnetic differential equations, with $\beta$ of the order of the ratio induced to vacuum fields. Under these assumptions, it is proven that the aspect ratio must be large and a simple expression can be obtained for the lowest-order vacuum field. The first-order correction, which involves both vacuum and current-driven fields, is governed by a Grad–Shafranov equation and the requirement that flux surfaces exist. These two equations are not always consistent, and so this model is generally overconstrained, but special solutions exist that satisfy both equations simultaneously. One family of such solutions is the set of first-order near-axis solutions. Thus, the first-order near-axis model is a subset of the model presented here. Several other solutions outside the scope of the near-axis model are also found. A case study comparing one such solution to a VMEC-generated solution shows good agreement.

Nikulsin, Nikita (ORCID:0000000318611777)↗
DOE OSTI2021

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Testing the limits of ITkPixV2: the ATLAS inner tracker pixel detector readout chip

The ITkPixV2 chip is the final production readout chip for the ATLAS Phase 2 Inner Tracker (ITk) upgrade at the upcoming High-Luminosity LHC (HL-LHC). Due to the extraordinarily high peak luminosity at the HL-LHC of 5 × 1034 cm-1 s-1, ITkPixV2 must meet significant increases in nearly all design requirements compared to the current ATLAS Inner Detector (ID), including a 10× increase in trigger rate, a 7.5× increase in hit rate, a 3× increase in radiation tolerance, and a 12.5× decrease in pixel current draw per unit area, all while maintaining a similar power per unit area as present pixel detectors. Here we present the first measurements of the ITkPixV2 chip operated at the limits of the full chip design requirements, including in particular a measurement of the activity-induced current of the chip as a function of increasing hit rate.

Le Pottier, L↗
DOE OSTI2024

Steady motion of 80-nm-size skyrmions in a 100-nm-wide track

The current-driven movement of magnetic skyrmions along a nanostripe is essential for the advancement and functionality of a new category of spintronic devices resembling racetracks. Despite extensive research into skyrmion dynamics, experimental verification of current-induced motion of ultra-small skyrmions within an ultrathin nanostripe is still pending. Here, we unveil the motion of individual 80 nm-size skyrmions in an FeGe track with an ultrathin width of 100 nm. The skyrmions can move steadily along the track over a broad range of current densities by using controlled pulse durations of as low as 2 ns. The potential landscape, arising from the magnetic edge twists in such a geometrically confined system, introduces skyrmion inertia and ensures efficient motion with a vanishing skyrmion Hall angle. Our results showcase the steady motion of skyrmions in an ultrathin track, offering a practical pathway for implementing skyrmion-based spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

42 ENGINEERING↗
DOE OSTI2021

Origins of anisotropic transport in the electrically switchable antiferromagnet Fe 1/3 NbS 2

Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide Fe 1/3 NbS 2 have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering temperature, making Fe 1/3 NbS 2 promising for spintronics applications. Here, we perform density functional theory calculations with Hubbard U corrections of the magnetic order, electronic structure, and transport properties of crystalline Fe 1/3 NbS 2 , clarifying the origin of the different resistance states. The two experimentally proposed antiferromagnetic ground states, corresponding to in-plane stripe and zigzag ordering, are computed to be nearly degenerate. In-plane cross sections of the calculated Fermi surfaces are anisotropic for both magnetic orderings, with the degree of anisotropy sensitive to the Hubbard U value. The in-plane resistance, computed within the Kubo linear response formalism using a constant relaxation time approximation, is also anisotropic, supporting a hypothesis that the current-induced resistance changes are due to a repopulating of antiferromagnetic domains. Our calculations indicate that the transport anisotropy of Fe 1/3 NbS 2 in the zigzag phase is reduced relative to stripe, consistent with the relative magnitudes of resistivity changes in experiment. Finally, our calculations reveal the likely directionality of the current-domain response, specifically, which domains are energetically stabilized for a given current direction.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Analysis of Screening Current Effects in a Hybrid Nb$_{3}$Sn/REBCO Superconducting Accelerator Magnet Using a T - A Formulation

To explore the feasibility of using high-temperature superconducting (HTS) REBCO coated conductors in future accelerator magnets, two REBCO flat racetrack coils were fabricated using 4-mm wide EuBCO tapes at the High Energy Accelerator Research Organization (KEK). These coils were tested as an insert inside a Nb$_{3}$Sn common-coil dipole magnet, which provides a background field of up to $\sim$ 9.5T, at the Brookhaven National Laboratory (BNL). REBCO tapes offer exceptionally high critical current density under strong magnetic fields; however, they also exhibit significant magnetization due to screening currents, leading to magnetic field errors. Here, this study presents a 2D finite element model of screening current-induced fields (SCIF) in REBCO coils using the T-A formulation, along with the results obtained. Simulations were then performed for two KEK test cases: one where the REBCO conductors were oriented with the HTS tapes parallel to the background field, and another where the tapes were perpendicular to it. Since screening currents also influence the stress distribution and increase the peak stress in the coils, the mechanical effects of these currents were analyzed. The implications of these simulation and test results for the design of Nb$_{3}$Sn/REBCO superconducting accelerator magnets are discussed.

Accelerator magnets↗