Progress in Medium-Voltage Vertical GaN Power Devices
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GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.
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A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)
Vertical GaN p-n diodes combine excellent efficiencies with incredibly fast protection from unwanted electromagnetic pulses.
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An inverter with a modular bus assembly is described. In various embodiments, the modular bus assembly includes a laminated motherboard and a plurality of capacitor daughtercards. The laminated motherboard can be configured to interface a plurality of phase-leg modules and a plurality of capacitor daughtercards through a plurality of terminals and connectors located on a bottom side or a top side of the laminated motherboard. The laminated motherboard includes a layer stack with a plurality of conductor layers. Each of the plurality of conductor layers is implemented with a net spacing from a neighboring plated through hole (PTH) based at least in part on differences in potential to be applied to each of the plurality of conductor layers as compared to a potential to be applied to the PTH. Embedded shield polygons can be implemented on the laminated motherboard to mitigate surface discharge at surface terminal (PTH/SMT) triple junctions.
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This project’s focus was to create an ultra-fast resonant hybrid dc circuit breaker for medium voltage electric systems. Medium voltage DC systems offer higher efficiency, additional resiliency, more controllability, and greater flexibility over comparable AC systems. Although technically, medium voltage DC systems are more attractive than their AC counterparts, no solution exists for the protection of medium voltage DC systems, and thus one cannot build a reliable MVDC system. This research will fill the technology gap, providing a MVDC protection solution, allowing mass adoption and proliferation of MVDC systems. MVDC systems will allow greater integration of renewable energy sources, higher efficiency of transmission and distribution, reduced losses in transmission lines, reduce carbon emissions, and higher electric power reliability.
The objective of this project is to develop a high-efficiency solid-state transformer that converts a fixed DC voltage to a medium-voltage AC for utility distribution network connections without having the conventional low-frequency bulky transformers and switch gears. The initial target of 99% efficiency was achieved with the use of wide bandgap semiconductor devices using a proposal novel multilevel inverter. The medium-voltage was successfully tested at 7.2/12.47 kV phase/line voltage level for a 100-kW three-phase inverter.