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99 records · Page 6

Muon Time-of-Flight studies for cosmic background rejection in the Short Baseline Near Detector

The Short-Baseline Neutrino (SBN) program at Fermilab is a cutting-edge project in experimental neutrino physics. One of its main goals is to systematically investigate the possible existence of eV-scale sterile neutrinos. This phenomenon has been hypothesized to explain some anomalies found in short-range experiments and, if confirmed, would imply a substantial extension of the Standard Model. SBN also offers an important opportunity to deepen the understanding of neutrino-nucleus interactions in the GeV energy range, through the use of Liquid Argon Time Projection Chambers (LArTPC) detectors, a fundamental technology also for the future DUNE experiment. The SBN experimental infrastructure consists of three detectors aligned along the Booster Neutrino Beamline at Fermilab. Among them, the detector located closest to the neutrino source, SBND (Short-Baseline Near Detector), positioned approximately 110 meters from the target, plays a key role in directly characterizing the initial neutrino flux. This allows for a direct comparison with the measurements from the far detector, ICARUS, located about 600 meters from the source, in order to search for potential signs of anomalous neutrino oscillations. My master's thesis focuses on the commissioning and characterization activities of the SBND detector, with particular reference to the Cosmic Ray Tagger (CRT). The CRT is a subsystem for identifying and rejecting events produced by cosmic rays, which constitute the main source of background for surface experiments like SBND. The activity began with the commissioning of the final components of the detector, as well as their validation to verify their correct functioning and signal acquisition. A central part of my work involved studying the veto efficiency of the CRT system, analyzing the rate of cosmic ray-induced events to quantify any loss of neutrino-induced events caused by cosmic background. This allowed for a more precise evaluation of the systematic impact of the CRT on the useful physics sample. A further phase of my analysis involved an in-depth study of the temporal correlation between the CRT signals and those acquired by the LArTPC's internal photodetector system, consisting of photomultiplier tubes and X-ARAPUCA devices. The objective is to explore the possibility of using combined temporal information as an additional criterion for discriminating between cosmic signals and signals genuinely due to neutrino interaction. Preliminary results indicate the presence of characteristic temporal signatures that could be exploited to improve event selection and increase the purity of the neutrino-induced sample. These methodologies will certainly contribute to the optimization of SBND analysis strategies and, more generally, to a better understanding of background mechanisms in next-generation LArTPC experiments.

Corallo, Annalea [Ferrara U.]↗

Graphical User Interface for a Biasing Board for the PSEC6

The PSEC6 is an application-specific integrated circuit (ASIC) designed for a readout system for a large area picosecond photodetector (LAPPD). The PSEC6 is currently in fabrication and pending testing. The testing system for the PSEC5, the previous iteration of the ASIC, required expensive and non-portable equipment, because the ASIC needs twelve adjustable reference voltages. The new testing system consists of an low-cost, open-source, cross-platform graphical user interface (GUI), a digital system, and a biasing board. The digital system is the interface between the GUI and biasing board, and can be implemented on a microcontroller or field-programmable gate array (FPGA). The biasing board contains twelve digital-to-analog converters (DACs) that are configurable via the GUI, which gives users the ability to write voltage values to all or specific DACs. The GUI was developed in C on Linux using the widget library GTK4 and cross-compiled for Windows compatibility. I2C and SPI protocols were implemented on an Adafruit Feather ESP32-S3 microcontroller to write commands to the DACs and PSEC6. A hardware implementation of the I2C protocol is in development on an FPGA. Since LAPPDs will be used by the Accelerator Neutrino Neutron Interaction Experiment (ANNIE) at Fermilab, the PSEC6 testing system in this internship project can potentially benefit future neutrino research. The project is relevant to the Department of Energy’s microelectronics mission, because the PSEC6 is an ASIC that will handle fast time signals arriving from the detector for readout. It also provided experience with building a cross-platform user interface, practicing digital design and implementation in hardware description language (HDL), and using simulations to inform new design iterations.

Guerrero, Sasha Camila [North Central Coll.]↗

Bound Exciton Complexes in Near-Infrared Emitting Quantum Shells

Near-infrared (NIR) light sources based on colloidal semiconductor nanocrystals (NCs) represent a scalable, low-cost alternative to epitaxial semiconductor platforms. However, their performance remains hindered by rapid Auger recombination, a problem that is particularly pronounced in narrow-bandgap materials. Here, we report on CdS/HgS/CdS and CdS/HgCdSe/ ZnS quantum shells (QSs), a class of spherical quantum wells specifically engineered for a suppression of nonradiative Auger processes. Fabricated QSs exhibit tunable NIR emission with photoluminescence quantum yields reaching ∼60% below 1000 nm and up to 30% near 1300 nm. Optical gain and stimulated emission were observed in CdS/HgS/CdS QSs. In contrast, CdS/HgCdSe/ZnS QSs displayed a photoinduced absorption in lieu of optical gain despite demonstrating a comparatively stronger Auger suppression. Transient absorption spectroscopy revealed that this phenomenon arises from the formation of bound multiexciton complexes that induce long-lived sub-bandgap multiexciton states. The observation of such bound excitonic clusters at room temperature offers a pathway toward nonlinear NIR photonic phenomena, including biexciton−exciton cascade emission, optical modulation, and singleexciton gain.

Auger recombination↗

Inferring fusion nuclear burnwidths with low gain photomultiplier impulse response functions

When an inertial confinement fusion implosion is compressed, it maintains thermonuclear density and temperatures for a very short time scale, about 100 ps. The Gamma Reaction History diagnostic measures the time evolution of the fusion burn, but its temporal resolution is limited by the use of a photomultiplier tube (PMT) to amplify the photon signal. Multichannel plate-based PMTs have a fast (~120 ps) full-width at half-max impulse response function (IRF), but the time scale is similar to the incoming physics signal. An analysis routine is used to remove the effect of the PMT IRF and infer the incident fusion burnwidth. With the National Ignition Facility achieving ignition and creating much brighter signals, the PMTs are run at gains three orders of magnitude lower than nominal operation. Calibration at these settings shows the PMT IRFs get ~15% wider. Taking the gain-dependent IRF can affect the inferred nuclear burnwidths by up to ~15%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Adiabatic light guide with S-shaped strips

A light guide is an essential part of many scintillator counters and light collection systems. Our main interest is a light guide for a thin, wide scintillator that has high light transmission while converting the area of the light source to the shape of a photo-detector. Here, we propose a variation of the light guide that avoids a 90° twist of the strips, reduces the length of the light pipe, and reduces the complexity of production. Detailed Monte Carlo simulation studies have been performed for a three-strip S-shaped light-guide system.

47 OTHER INSTRUMENTATION↗

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗

Effect of Illumination Area on the Ultrafast Temporal Response of MSM GaN Photodiodes

We investigate the influence of spatial illumination profiles on the temporal response of metal–semiconductor–metal GaN photodiodes. Using both simulation and experimental measurements, we compare the response curves under two scenarios: illumination confined to the active area between electrodes and extended illumination beyond the contacts. The results show that limiting the beam illumination to the active region significantly sharpens the response, reducing the long decay tails associated with slow carrier drift from peripheral regions. As a result, the experimental data closely match simulation predictions, confirming that illumination geometry plays a critical role in optimizing photodiode performance for ultrafast detection applications.

Carrier drift time↗

Resistive Coatings for High-performance, Low-background MCPs Operating Across Broad Temperature Ranges and at Cryogenic Temperatures

Microchannel plate with improved thermo-electric properties are a high risk, high payoff development undertaken by a consortium of effort that links the Argonne National Lab, the Space-Science Lab at UC Berkeley and the small businesses (Incom Inc.) that will commercialize the advanced technology in open MCPs and LAPPDs. This development will satisfy the needs for new instrumentation for homeland security (non-proliferation) sensors to screen vehicles and cargo for Special Nuclear Materials (SNMs) and scientific detectors for astrophysics, electron microscopy, time-of-flight mass spectrometry, molecular and atomic collision studies, and fluorescence imaging applications in biotechnology and medical imaging products including positron emission tomography (PET scanning).

99 GENERAL AND MISCELLANEOUS↗

Enhanced Thermal Stability of Conductive Mercury Telluride Colloidal Quantum Dot Thin Films Using Atomic Layer Deposition

Colloidal quantum dots (CQDs) are valuable for their potential applications in optoelectronic devices. However, they are susceptible to thermal degradation during processing and while in use. Mitigating thermally induced sintering, which leads to absorption spectrum broadening and undesirable changes to thin film electrical properties, is necessary for the reliable design and manufacture of CQD-based optoelectronics. Here, low-temperature metal–oxide atomic layer deposition (ALD) was investigated as a method for mitigating sintering while preserving the optoelectronic properties of mercury telluride (HgTe) CQD films. ALD-coated films are subjected to temperatures up to 160 °C for up to 5 h and alumina (Al 2 O 3 ) is found to be most effective at preserving the optical properties, demonstrating the feasibility of metal–oxide in-filling to protect against sintering. HgTe CQD film electrical properties were investigated before and after alumina ALD in-filling, which was found to increase the p-type doping and hole mobility of the films. The magnitude of these effects depended on the conditions used to prepare the HgTe CQDs. With further investigation into the interaction effects of CQD and ALD process factors, these results may be used to guide the design of CQD–ALD materials for their practical integration into useful optoelectronic devices.

36 MATERIALS SCIENCE↗