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At least 109 records · Page 6

PV Modules Temperature Variation and Patterns in Medium and Utility-Scale Floating PV Systems

This paper presents the preliminary results and findings of the four operational Floating PV systems across the USA. At each site, temperature of five PV modules located at North-West, North-East, Middle, South-West, and, South-East have been monitored through the Resistant Temperature Detector (RTD) sensors. Three RTDs were attached to each PV module on the rear-side along the diagonal at top, middle and bottom cells. The preliminary results reveal wide temperature differences among the inter and intra PV modules. Besides this, wave pattern temperatures were observed in a few PV modules. The final results, findings, and, factors responsible will be investigated during the next few months. Index Terms - photovoltaic module, floating PV systems, string, array, temperature, mismatch, utility scale.

ENGINEERING,SOLAR ENERGY↗

Amorphous silicon photovoltaic modules and test devices design, fabrication and testing

In July of 1984, Hughes and JPL initiated a contract for Hughes to design, fabricate and test 10 thin film Amorphous Silicon (a-Si) photovoltaic power modules. These modules were to be 1 ft x 4 ft in size. They were to be preceded by the delivery of 10 a-Si 4 in. square test devices. This effort is very timely since thin film PV development has progressed to the point where intermediate load power applications are on the horizon. It is important to know if current a-Si submodule design and manufacturing processes yield a product that is compatible with the packaging needed to meet a 20 to 30 year life span expectancy. The term submodule is assigned to an interconnected assembly of 28 a-Si cells deposited on a 1 foot square glass superstrate. These assemblies are equipped with electrical terminations, i.e., copper tabs at the four corners of the inverted submodules. It is these submodules that are to be interconnected and packaged into power modules, as opposed to the interconnected individual crystalline cells packaged into todays PV modules. A discussion of the fabrication methods and results follows.

Vanleeuwen, M.↗

Laser Ablation for Low-Cost Multijunction III-V Solar Cell Mesa Isolations

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation, when processing multijunction cells. We demonstrate that upright multijunction solar cells isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline cell processed with photolithography. By contrast, cells isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with post-processing etches. This demonstration of photolithography-free mesa isolation with no performance losses is promising for less expensive III-V manufacturing.

14 SOLAR ENERGY↗

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗

Advances in Mixed Tin‐Lead Narrow‐Bandgap Perovskites for Single‐Junction and All‐Perovskite Tandem Solar Cells

Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.

14 SOLAR ENERGY↗

Computation of photovoltaic parameters under lunar temperature variation

Photovoltaic (PV) arrays with regenerative-fuel-cell energy storage is a prime, power-system candidate for lunar photo-power. The PV module performance decreases at higher temperatures. Surface temperature variations of the moon are extreme, the maximum (noon) temperature being 384 K. The present work utilizes detailed computations of photovoltaic parameters with computer program developed earlier for the computation of optimum bandgaps of single- and two-junction solar cells at different temperatures, and calculates the power output of single and two-junction solar modules under different configurations which constitutes an improvement over the assumption of a linear variation of efficiency with temperature. The program also calculates the necessary PV-array size to satisfy stipulated levels of day- and night-time power consumption.

Dhere, Neelkanth G.↗

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗

Experimental Validation of a Module Cell Cracking Model

The What's Cracking app can predict how changes in crystalline silicon photovoltaic (PV) module materials, design, and mounting affect its susceptibility for cell fracture under uniform loading. This work has experimentally validated the app. A set of commercial crystalline silicon PV modules was obtained for this study. The modules were uniformly loaded at three different mounting points, and their subsequent cell fractures were recorded. A large sample size allowed for the development of an experimental statistical model for cell fracture. Here, the comparison of the experiment to predictions from the app is in excellent agreement. Both experimental and modeling results also elucidate how moving the module mounting points toward the center of the module increases the probability of cell fracture.

14 SOLAR ENERGY↗

Report of the Workshop on Next-Generation Space PV: Thin Films

A workshop on the future use of thin-film photovoltaic devices in space power was convened at the 16th Space Photovoltaic Research and Technology Conference held at the NASA Glenn Research Center in Cleveland, OH. This workshop began by addressing: 1) What are the leading impediments or technological challenges to be overcome with regard to the use of thin-film PV in space? 2) What is the status of organic based cells? Will they have a role in space PV, if so when? and 3) What about an integrated PV/Li battery array-up and down sides? A discussion on these three questions pertaining to future use of thin film devices for space power systems is presented

Raffaelle, R. P.↗

Flat-plate solar array project. Volume 7: Module encapsulation

The objective of the Encapsulation Task was to develop, demonstrate, and qualify photovoltaic (PV) module encapsulation systems that would provide 20 year (later decreased to 30 year) life expectancies in terrestrial environments, and which would be compatible with the cost and performance goals of the Flat-Plate Solar Array (FSA) Project. The scope of the Encapsulation Task included the identification, development, and evaluation of material systems and configurations required to support and protect the optically and electrically active solar cell circuit components in the PV module operating environment. Encapsulation material technologies summarized include the development of low cost ultraviolet protection techniques, stable low cost pottants, soiling resistant coatings, electrical isolation criteria, processes for optimum interface bonding, and analytical and experimental tools for evaluating the long term durability and structural adequacy of encapsulated modules. Field testing, accelerated stress testing, and design studies have demonstrated that encapsulation materials, processes, and configurations are available that meet the FSA cost and performance goals.

Cuddihy, E.↗

Hands-On PV Experience (HOPE) Workshop, Final Technical Report FY22-FY24

The Hands-On Photovoltaics Experience, or HOPE, is a one-week school held at NLR each summer to educate graduate student photovoltaic researchers in the fundamentals of photovoltaics (PV) as well as specific cell technologies and measurement & characterization techniques. The program brings students from universities across the U.S. and their faculty advisors to spend a week in an in-depth, intensive program, including hands-on lab experiences in solar cell fabrication and testing. This program is intended to educate the students and increase collaboration among the students, their advising faculty, and staff at NLR. Our survey results consistently indicate high satisfaction with this program and good student outcomes post-HOPE. HOPE is a selective program with a competitive application process and is limited to 12-20 students each year. Keeping the program small enables a high level of interaction among the students and individualized attention from the faculty and staff.

14 SOLAR ENERGY↗

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗

Recent advances in GaAs/Ge solar cells

By growing the GaAs cell on a Ge substrate, the advantages of GaAs cells can be retained and the higher mechanical strength of the Ge makes larger, thinner GaAs cells possible. To conform to immediate user requirements, GaAs growth conditions were modified to eliminate the additional PV output at GaAs/Ge interface. To demonstrate acceptable cell manufacturing technology, the major areas in cell manufacture were analyzed and developed, and efficiency combined. Also the cells were successfully assembled on current lightweight arrays. The main areas of effort are discussed.

Chu, C. L.↗

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

On-orbit measurements of new photovoltaic (PV) technologies for space power are an essential step in the development and qualification of advanced solar cells. NASA Glenn Research Center will fly and measure several solar cells attached to NASA Goddards Robotic Refueling Mission (RRM), expected to be launched in 2014. Industry and government partners have provided advanced PV devices for evaluation of performance and environmental durability. The experiment is completely self-contained, providing its own power and internal data storage. Several new cell technologies including Inverted Metamorphic Multi-junction and four-junction cells will be tested.

robotic refueling mission↗

Vascular defense responses in rice: peroxidase accumulation in xylem parenchyma cells and xylem wall thickening

The rice bacterial blight pathogen Xanthomonas oryzae pv. oryzae is a vascular pathogen that elicits a defensive response through interaction with metabolically active rice cells. In leaves of 12-day-old rice seedlings, the exposed pit membrane separating the xylem lumen from the associated parenchyma cells allows contact with bacterial cells. During resistant responses, the xylem secondary walls thicken within 48 h and the pit diameter decreases, effectively reducing the area of pit membrane exposed for access by bacteria. In susceptible interactions and mock-inoculated controls, the xylem walls do not thicken within 48 h. Xylem secondary wall thickening is developmental and, in untreated 65-day-old rice plants, the size of the pit also is reduced. Activity and accumulation of a secreted cationic peroxidase, PO-C1, were previously shown to increase in xylem vessel walls and lumen. Peptide-specific antibodies and immunogold-labeling were used to demonstrate that PO-C1 is produced in the xylem parenchyma and secreted to the xylem lumen and walls. The timing of the accumulation is consistent with vessel secondary wall thickening. The PO-C1 gene is distinct but shares a high level of similarity with previously cloned pathogen-induced peroxidases in rice. PO-C1 gene expression was induced as early as 12 h during resistant interactions and peaked between 18 and 24 h after inoculation. Expression during susceptible interactions was lower than that observed in resistant interactions and was undetectable after infiltration with water, after mechanical wounding, or in mature leaves. These data are consistent with a role for vessel secondary wall thickening and peroxidase PO-C1 accumulation in the defense response in rice to X. oryzae pv. oryzae.

NASA Discipline Plant Biology↗

Degradation and Accelerated Recovery of Surface Passivation in n+ Poly-Si/SiOx Passivating Contacts for TOPCon Solar Cells

We studied the surface degradation and recovery of fired poly-Si/SiOx passivating contacts during subsequent dark and illuminated annealing. We report on an industrially-viable path for accelerated recovery of surface passivation. The degradation is influenced by the type of doping in the poly-Si. Phosphorus doped n+ poly-Si/SiOx contacts show degradation followed by recovery, undoped poly-Si/SiOx contacts only show recovery during annealing. Boron doped p+ poly-Si/SiOx contacts show neither degradation nor improvement with annealing. Both degradation and recovery are thermally-activated processes and are completely reversible and cyclic in nature. The activation energy of degradation and recovery in dark for n+ poly-Si/SiOx contacts are 1.27 and 1.33 eV respectively. Dark annealing at elevated temperatures is effective for complete recovery but takes a long time (~30 min at 350 degrees C) due to higher activation energies. Annealing under 7.5 Suns of illumination lowers the activation energy for degradation and recovery to 0.88 and 0.90 eV, respectively. Using this data, we have developed an industrially viable post-firing treatment for accelerated recovery of TOPCon cells by annealing them at elevated temperatures and under intense illumination for a few minutes.

14 SOLAR ENERGY↗