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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Self-assembled multifunctional nanostructures for surface passivation and photon management in silicon photovoltaics

This work reports the fabrication and characterization of multifunctional, nanostructured passivation layers formed using a self-assembly process that provide both surface passivation and improved light trapping in crystalline silicon photovoltaic (PV) cells. Scalable block copolymer self-assembly and vapor phase infiltration processes are used to form arrays of aluminum oxide nanostructures (Al 2 O 3 ) on crystalline silicon without substrate etching. The Al 2 O 3 nanostructures are characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectroscopic ellipsometry. Injection-level dependent photoconductance measurements are used to determine the effective carrier lifetime of the samples to confirm the nanostructures successfully passivate the Si surface. Finite element method simulations and reflectance measurement show that the nanostructures increase the internal rear reflectance of the PV cell by suppressing the parasitic optical losses in the metal contact. An optimized morphology of the structures is identified for their potential use in PV cells as multifunctional materials providing surface passivation, photon management, and carrier transport pathways.

14 SOLAR ENERGY↗
DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗
DOE OSTI2024

Manipulating Photoconduction in Cu–Pyrene 1-D Coordination Nanosheets by Modulating Interlayer π–π Stacking

2D conductive metal organic frameworks (MOFs) have become promising candidates for applications in electronic and photoelectronic devices. However, the lack of a fundamental understanding of the charge transport mechanism and synthetic design to alter their conductivity limits their potential applications. In this work, we report the design and synthesis of two 1D Cu–pyrene coordination nanosheets, Cu–pyrene-4,5,9,10 tetrathiol (Cu-PTT) and Cu–2,7-di-tert-butylpyrene-4,5,9,10-tetrathiol (Cu– tBu PTT), as models of 2D conductive MOFs, where the introduction of two different functional groups (H and tert-butyl groups) at the 2 and 7 positions of the PTT ligands is used to tune the interlayer distance and π–π stacking of MOFs. Using optical pump terahertz probe spectroscopy, we show that both nanosheets exhibit appreciable photoconduction, but the photoconduction in Cu– tBu PTT is reduced with respect to that in Cu–PTT, which can be attributed to the larger interlayer distance in the former leading to the decoupling of the interlayer charge transport pathway. Furthermore, these results demonstrate a unique strategy to investigate the impact of out-of-plane extended conjugation on photoconduction in conductive conjugated polymers, MOFs, or coordination nanosheets through adjusting their interlayer spacing.

14 SOLAR ENERGY↗
DOE OSTI2021

Bulk Photovoltaic Effect Driven by Collective Excitations in a Correlated Insulator

We investigate the bulk photovoltaic effect, which rectifies light into electric current, in a collective quantum state with correlation driven electronic ferroelectricity. We show via explicit real-time dynamical calculations that the effect of the applied electric field on the electronic order parameter leads to a strong enhancement of the bulk photovoltaic effect relative to the values obtained in a conventional insulator. The enhancements include both resonant enhancements at sub-band-gap frequencies, arising from excitation of optically active collective modes, and broadband enhancements arising from nonresonant deformations of the electronic order. The deformable electronic order parameter produces an injection current contribution to the bulk photovoltaic effect that is entirely absent in a rigid-band approximation to a time-reversal symmetric material. Furthermore, our findings establish that correlation effects can lead to the bulk photovoltaic effect and demonstrate that the collective behavior of ordered states can yield large nonlinear optical responses.

14 SOLAR ENERGY↗
DOE OSTI2021

Observation of spatially resolved Rashba states on the surface of CH 3 NH 3 PbBr 3 single crystals

Hybrid organic-inorganic perovskites (HOIPs) are prime candidates for studying Rashba effects due to the heavy metal and halogen atoms in their crystal structure coupled with predicted inversion symmetry breaking. Nevertheless, observation of the Rashba effect in cubic CH 3 NH 3 PbBr 3 single crystals that possess bulk inversion symmetry is the subject of extensive debate due to the lack of conclusive experiments and theoretical explanations. In this work, we provide experimental evidence that Rashba state in cubic CH 3 NH 3 PbBr 3 single crystals at room temperature occurs exclusively on the crystal surface and depends on specific surface termination that results in local symmetry breaking. We demonstrate this using a suite of spatially resolved and depth-sensitive techniques, including circular photogalvanic effect, inverse spin Hall effect, and multiphoton microscopy, that are supported by first principle calculations. Our work suggests using surface Rashba states in these materials for spintronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Nanostructures evolution assessment and spectroscopic properties modification induced by electronic energy loss in KTaO 3 crystal

Modifications of micro/nanostructure and photoelectric properties under swift ion irradiation (645 MeV Xe 35+ ) of KTaO 3 crystal with varying electronic energy losses (7.2–31.4 keV/nm) and ion velocities (0.18–5.00 MeV/u) have been studied by combining experimental and calculated approaches. The i-TS calculations combined with molecular dynamics simulations are compared with the experimental observations, revealing the inner track fine structures from individual spherical defects to continuous ion tracks with core–shell morphologies, and a quantitative relationship, including the melting (0.42 eV/atom), damage (0.75 eV/atom), and amorphous (1.71 eV/atom) thresholds, is established to successfully predict the inner disorder/amorphous proportions and track damage morphologies. The surface nanostructures of nanohillocks (isolated or partial overlaps) and nanopits (serious overlaps) directly depend on the combined action of the deposited potential and kinetic energies of incident ions, which induce local melting and sublimation in the near-surface region. Owing to the decreased recombination and the increased separation efficiency between electrons and holes, the higher photogenerated charge carrier mobility enhanced the photocurrent effect, further optimizing the photoconductivity performance in Xe 35+ -irradiated KTaO 3 . Therefore, controlled defect engineering using the ion irradiation technique, as an effective strategy, could design tailored nanostructure systems and regulate photoelectric properties, further promoting the development of novel technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A self-supervised robotic system for autonomous contact-based spatial mapping of semiconductor properties

Integrating robotically driven contact-based material characterization techniques into self-driving laboratories can enhance measurement quality, reliability, and throughput. While deep learning models support robust autonomy, current methods lack reliable pixel-precision positioning and require extensive labeled data. To overcome these challenges, we propose an approach for building self-supervised autonomy into contact-based robotic systems that teach the robot to follow domain expert measurement principles at high throughputs. We demonstrate the performance of this approach by autonomously driving a 4-DOF robotic probe for 24 hours to characterize semiconductor photoconductivity at 3025 uniquely predicted poses across a gradient of drop-casted perovskite film compositions, achieving throughputs of more than 125 measurements per hour. Spatially mapping photoconductivity onto each drop-casted film reveals compositional trends and regions of inhomogeneity, valuable for identifying manufacturing defects. With this self-supervised neural network–driven robotic system, we enable high-precision and reliable automation of contact-based characterization techniques at high throughputs, thereby allowing measurement of previously inaccessible yet important semiconductor properties for self-driving laboratories.

Science & Technology - Other Topics↗
DOE OSTI2023

Broadband Photoconductive Sampling in Gallium Phosphide

Abstract Direct measurements of the electric field of light enable new observations of light–matter interactions. In the near‐infrared and visible spectral ranges, this typically relies on techniques that exploit nonlinearities in gases or solids, which limits their sensitivity. Here, a method for the detection of broadband near‐infrared fields spanning more than one octave from 110 to 220 THz based on linear absorption in a semiconductor is demonstrated. This technique, which avoids complex vacuum setups and works under ambient conditions, employs linear photoconductive sampling (LPS) in gallium phosphide. Simulations reveal that the response function of LPS is concerned with the intensity envelope of the gate field, in contrast to electro‐optic sampling, relaxing the stringent temporal requirements on the gate pulse.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Light-Induced Structural Dynamics and Charge Transport in Layered Halide Perovskite Thin Films

The dynamic nature of the metal halide perovskite lattice upon photoexcitation plays a vital role in their properties. Here we report an observation of light-induced structure dynamics in quasi-2D Ruddlesden–Popper phase perovskite thin films and its impact on the carrier transport properties. By a time-resolved X-ray scattering technique, we observe a rapid lattice expansion upon photoexcitation, followed by a slow relaxation over the course of 100 ns in the dark. Theoretical modeling suggests that the expansion originates from the lattice’s thermal fluctuations caused by photon energy deposition. Power dependent optical spectroscopy and photoconductivity indicate that high laser powers triggered a strong local structural disorder, which increased the charge dissociation activation energy that results in localized transport. Finally, our study investigates the impact of laser energy deposition on the lattices and the subsequent carrier transport properties, that are relevant to device operations.

2D perovskites↗
DOE OSTI2021

Photogating-driven enhanced responsivity in a few-layered ReSe 2 phototransistor

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (I ph ) at an effective illumination intensity (P eff ). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe 2 ). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, V g = 60 V and P eff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Persistent opto-ferroelectric responses in molecular ferroelectrics

Persistent photoresponses require optical excitations to metastable states, which are rare of ionic origin due to the indirect photon-ion interaction. In this work, we explore the photoinduced metastable proton states in the proton-transfer type molecular ferroelectric croconic acid.We observe that, after the photoexcitation, the changes of structural and ferroelectric properties relax in ~10 3 s, indicating persistent photoresponses of ionic origin. In contrast, the photoconductivity relaxes within 1 s. The 10 3 s timescale suggests that the ionic metastable states result from proton transfer both along and out of the hydrogen bonds. Furthermore, this discovery unveils an ionic mechanism for the phototunability, which offers persistent opto-ferroelectric control for proton-transfer type molecular ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Frequency-domain terahertz spectroscopy using long-carrier-lifetime photoconductive antennas

We present a telecommunication-compatible frequency-domain terahertz spectroscopy system realized by novel photoconductive antennas without using short-carrier-lifetime photoconductors. Built on a high-mobility InGaAs photoactive layer, these photoconductive antennas are designed with plasmonics-enhanced contact electrodes to achieve highly confined optical generation near the metal/semiconductor surface, which offers ultrafast photocarrier transport and, hence, efficient continuous-wave terahertz operation including both generation and detection. Consequently, using two plasmonic photoconductive antennas as a terahertz source and a terahertz detector, we successfully demonstrate frequency-domain spectroscopy with a dynamic range more than 95 dB and an operation bandwidth of 2.5 THz. Moreover, this novel approach to terahertz antenna design opens up a wide range of new possibilities for many different semiconductors and optical excitation wavelengths to be utilized, therefore bypassing short-carrier-lifetime photoconductors with limited availability.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zero-biased and visible-blind UV photodetectors based on nitrogen-doped ultrananocrystalline diamond nanowires

Taking advantage of the superflat surface of ultrananocrystalline diamond (UNCD), highly precise UNCD nanowire (NW) arrays were fabricated to develop high-performance UV photodetectors. The large surface-to-volume ratio of a nanowire significantly increases the number of surface trap states, and the reduced dimensionality effectively confines the active area of the charge carrier and shortens the transit time, which results in an enhanced photoconductivity and response speed. Here, in this paper, the zero-biased UV photodetectors based on nitrogen-incorporated ultrananocrystalline diamond nanowire arrays have been demonstrated and characterized. The estimated responsivity was 2.0 A/W for 350 nm incident light when the device operated at room temperature. The UVA and UVB photocurrent signals from this visible blind photodetector were well defined with a rise and decay time of less than 1 s.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Linking optical spectra to free charges in donor/acceptor heterojunctions: cross-correlation of transient microwave and optical spectroscopy

The primary photoexcited species in excitonic semiconductors is a bound electron–hole pair, or exciton. An important strategy for producing separated electrons and holes in photoexcited excitonic semiconductors is the use of donor/acceptor heterojunctions, but the degree to which the carriers can escape their mutual Coulomb attraction is still debated for many systems. Here, we employ a combined pump–probe ultrafast transient absorption (TA) spectroscopy and time-resolved microwave conductivity (TRMC) study on a suite of model excitonic heterojunctions consisting of mono-chiral semiconducting single-walled carbon nanotube (s-SWCNT) electron donors and small-molecule electron acceptors. Comparison of the charge-separated state dynamics between TA and TRMC photoconductance reveals a quantitative match over the 0.5 microsecond time scale. Charge separation yields derived from TA allow extraction of s-SWCNT hole mobilities of ca. 1.5 cm 2 V -1 s -1 (at 9 GHz) by TRMC. We find that the correlation between the techniques conclusively demonstrates that photoinduced charge carriers separated across these heterojunctions do not form bound charge transfer states, but instead form free/mobile charge carriers.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spectrally-dependent positive and negative photo-plastic effects in CdZnTe and CdZnTeSe

We studied the Vickers microhardness HV0.025 of CdZnTe and CdZnTeSe samples upon illumination with quasi-monochromatic light with wavelengths ranging between 750 and 1540 nm. We observed that light with a wavelength close to or above the bandgap of the samples results in a positive photo-plastic effect (hardening), and light in the spectral range well below the band gap can lead both to positive or negative effects depending on the parameters of deep levels in the bandgap. We performed measurements of spectrally dependent photoconductivity and compared them with HV0.025. Based on the analysis, we propose a complex qualitative model explaining the spectral dependence of HV0.025 by the charging and neutralization of deep levels by optical transitions between the valence and conduction bands and between the bands and deep levels in the band gap. Tuning of parameters of deep levels could be used to control the sign and magnitude of the photo-plastic effect.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Defect-Limited Carrier Lifetime in Epitaxially Strained Germanium-On-Silicon Heterostructures

Epitaxially strained germanium-on-silicon (Ge-on-Si) heterostructures are central to next-generation photonic and electronic devices, yet their performance remains strongly constrained by defect-limited carrier lifetimes. In this work, we investigate the impact of defects on the carrier lifetime in relaxed Ge-on-Si and strained Ge-on-Si heterostructures. High-resolution X-ray diffraction quantifies the strain-state in Ge and reveals signatures of strain relaxation due to lattice mismatch. Cross-sectional and plan-view transmission electron microscopy analyses enable direct visualization of interfacial defects and quantification of threading dislocation densities (TDDs) within the Ge layer. However, the presence of a dense misfit dislocation network obscures the threading dislocation signatures, preventing reliable TDD determination by plan-view transmission electron microscopy in strained-Ge (..epsilon..-Ge). To assess the defect density in this case, etch-pit density measurements were performed, providing an alternative means of quantifying the TDDs in the ..epsilon..-Ge layer. Carrier lifetime measurements by microwave-reflection photoconductive decay reveal a clear relationship with TDDs ranging from 5 x 103 cm-2 to 2 x 1010 cm-2, confirming Shockley-Read-Hall recombination as the limiting mechanism at lower defect densities, with TDD-dominated recombination at higher defect densities. The Ge-on-Si relaxed heterostructure exhibited lifetimes much lower (~12 ns) than the lattice-matched Ge on gallium arsenide (GaAs) (~158 ns) heterostructure. Introducing controlled tensile strain reduces defect formation, suppresses strain-relaxation pathways, and leads to measurable improvements in minority carrier lifetime from 12 ns to 171 ns. These results establish a direct relation between defect suppression and carrier recombination dynamics in both relaxed Ge-on-Si grown directly on Si and strained Ge-on-Si heterostructures incorporating compound-semiconductor buffer layers, offering a materials-driven pathway for engineering Ge with improved carrier lifetime for photonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Evaluating the Ratio of Electron and Hole Mobilities from a Single Bulk Sample Using Photo-Seebeck Effect

When a semiconductor is under photoexcitation, the voltage response to a temperature gradient is the photo-Seebeck effect. In this work, we study this effect, focusing on the contribution from transport of photo-excited carriers. We demonstrate that by combining photo-Seebeck with photoconductivity measurements, one can determine the ratio between electron and hole mobilities, and hence both of them when one is known. This is found for the case of defect-free samples, where no detail on the absorbance, carrier lifetime or recombination is necessary. Our method reported here does not require chemical doping, which could introduce defects and is often not feasible. It applies to both thin film and bulk samples. Experiment wise, photo-Seebeck effect is relatively easy to implement, or added to existing systems. In a broader context, for semiconductors with significant influence from defects, our result suggests that the photo-Seebeck behavior can still be understood. In this case another photo-transport property is necessary, in order to identify the mobilities of carriers and information regarding the defects. This framework integrates the information from photoexcitation and thermal gradients to provide a general method to determine fundamental electronic properties of materials.

36 MATERIALS SCIENCE↗